Patent
US 11,365,491METHOD FOR PRODUCING SIC SUBSTRATE PROVIDED WITH GRAPHENE PRECURSOR AND METHOD FOR SURFACE TREATING SIC SUBSTRATE
Tadaaki Kaneko
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,365,491Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 9(a), in the stepped structure A having steps 41F1, 41F2, 41F3, one step is composed of four molecular layers. Thus, the step height is 1 nm. Among the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
[Claim 1] A method for producing a graphene precursor on a 4 H -SiC substrate, the method comprising: providing a substrate made of 4 H -SiC, the substrate made of 4 H -SiC having steps comprising a first step, a second step and a third step, each of the steps having an upper surface with a terrace width, a step height from the first step to the second step being the same as the step height from the second step to the third step, the terrace width of the first step, the second step and the third step being the same, each of the steps comprising: a first molecular layer having the upper surface, the first molecular layer having a first stepped structure whose C atom has two dangling bonds; a second molecular layer below the first molecular layer, the second molecular layer having a second stepped structure whose C atom has two dangling bonds; a third molecular layer below the second molecular layer, the third molecular layer having a third stepped structure whose C atom has one dangling bond; and a fourth molecular layer below the third molecular layer, the fourth molecular layer having a fourth stepped structure whose C atom has one dangling bond, heating the substrate made of 4 H -SiC to sublimate Si atoms from the first molecular layer in each of the steps to form the graphene precursor on the first molecular layer in each of the steps; and stopping the heating before the graphene precursor on the first molecular layer in each of the steps becomes graphene, thereby producing the graphene precursor on the 4H-SiC substrate.
[Claim 2] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is provided with an off-angle relative to < 1-100> direction.
[Claim 4] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, further comprising an etching process performed prior to sublimating the Si atoms by heating the substrate made of 4H-SiC under a Si vapor pressure.
[Claim 7] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is heated to sublimate the Si atoms at 1400 ° C or more and 2000 ° C or less.
[Claim 8] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is heated to sublimate the Si atoms at 1550 ° C or more and 1650 ° C or less.
[Claim 9] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is heated to sublimate the Si atoms in a treatment container having at least its inner surface made of pyrolytic carbon.
[Claim 18] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the graphene precursor has a six-membered ring structure in a thickness direction, the graphene precursor consisting of C atoms in which one out of every three C atoms of the graphene precursor is connected to a Si atom of the second molecular layer, wherein a thickness of the graphene precursor in the thickness direction is equal to a thickness of one C atom.
[Claim 19] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is heated to sublimate the Si atoms from the first molecular layer in each of the steps at a temperature of 1550 to 2200 ° C to form the graphene precursor on the first molecular layer in each of the steps.
[Claim 3]
[Claim 6]
[Claim 10]
[Claim 11]
[Claim 12]
[Claim 13]
[Claim 14]
[Claim 17]
Layer stacks claimed or described, ordered top of device to substrate.
4H-SiC substrate with graphene precursor
Materials described outside the worked examples.
4H-SiC substrate
4H-SiC
graphene precursor
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1400–2000 °C | — |
Temperature |
Patent
Atlas literature
Patent
US 11,365,491Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 9(a), in the stepped structure A having steps 41F1, 41F2, 41F3, one step is composed of four molecular layers. Thus, the step height is 1 nm. Among the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
[Claim 1] A method for producing a graphene precursor on a 4 H -SiC substrate, the method comprising: providing a substrate made of 4 H -SiC, the substrate made of 4 H -SiC having steps comprising a first step, a second step and a third step, each of the steps having an upper surface with a terrace width, a step height from the first step to the second step being the same as the step height from the second step to the third step, the terrace width of the first step, the second step and the third step being the same, each of the steps comprising: a first molecular layer having the upper surface, the first molecular layer having a first stepped structure whose C atom has two dangling bonds; a second molecular layer below the first molecular layer, the second molecular layer having a second stepped structure whose C atom has two dangling bonds; a third molecular layer below the second molecular layer, the third molecular layer having a third stepped structure whose C atom has one dangling bond; and a fourth molecular layer below the third molecular layer, the fourth molecular layer having a fourth stepped structure whose C atom has one dangling bond, heating the substrate made of 4 H -SiC to sublimate Si atoms from the first molecular layer in each of the steps to form the graphene precursor on the first molecular layer in each of the steps; and stopping the heating before the graphene precursor on the first molecular layer in each of the steps becomes graphene, thereby producing the graphene precursor on the 4H-SiC substrate.
[Claim 2] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is provided with an off-angle relative to < 1-100> direction.
[Claim 4] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, further comprising an etching process performed prior to sublimating the Si atoms by heating the substrate made of 4H-SiC under a Si vapor pressure.
[Claim 7] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is heated to sublimate the Si atoms at 1400 ° C or more and 2000 ° C or less.
[Claim 8] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is heated to sublimate the Si atoms at 1550 ° C or more and 1650 ° C or less.
[Claim 9] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is heated to sublimate the Si atoms in a treatment container having at least its inner surface made of pyrolytic carbon.
[Claim 18] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the graphene precursor has a six-membered ring structure in a thickness direction, the graphene precursor consisting of C atoms in which one out of every three C atoms of the graphene precursor is connected to a Si atom of the second molecular layer, wherein a thickness of the graphene precursor in the thickness direction is equal to a thickness of one C atom.
[Claim 19] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is heated to sublimate the Si atoms from the first molecular layer in each of the steps at a temperature of 1550 to 2200 ° C to form the graphene precursor on the first molecular layer in each of the steps.
[Claim 3]
[Claim 6]
[Claim 10]
[Claim 11]
[Claim 12]
[Claim 13]
[Claim 14]
[Claim 17]
Layer stacks claimed or described, ordered top of device to substrate.
4H-SiC substrate with graphene precursor
Materials described outside the worked examples.
4H-SiC substrate
4H-SiC
graphene precursor
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1400–2000 °C | — |
Temperature |
Patent
Atlas literature
Patent
US 11,365,491Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 9(a), in the stepped structure A having steps 41F1, 41F2, 41F3, one step is composed of four molecular layers. Thus, the step height is 1 nm. Among the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
[Claim 1] A method for producing a graphene precursor on a 4 H -SiC substrate, the method comprising: providing a substrate made of 4 H -SiC, the substrate made of 4 H -SiC having steps comprising a first step, a second step and a third step, each of the steps having an upper surface with a terrace width, a step height from the first step to the second step being the same as the step height from the second step to the third step, the terrace width of the first step, the second step and the third step being the same, each of the steps comprising: a first molecular layer having the upper surface, the first molecular layer having a first stepped structure whose C atom has two dangling bonds; a second molecular layer below the first molecular layer, the second molecular layer having a second stepped structure whose C atom has two dangling bonds; a third molecular layer below the second molecular layer, the third molecular layer having a third stepped structure whose C atom has one dangling bond; and a fourth molecular layer below the third molecular layer, the fourth molecular layer having a fourth stepped structure whose C atom has one dangling bond, heating the substrate made of 4 H -SiC to sublimate Si atoms from the first molecular layer in each of the steps to form the graphene precursor on the first molecular layer in each of the steps; and stopping the heating before the graphene precursor on the first molecular layer in each of the steps becomes graphene, thereby producing the graphene precursor on the 4H-SiC substrate.
[Claim 2] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is provided with an off-angle relative to < 1-100> direction.
[Claim 4] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, further comprising an etching process performed prior to sublimating the Si atoms by heating the substrate made of 4H-SiC under a Si vapor pressure.
[Claim 7] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is heated to sublimate the Si atoms at 1400 ° C or more and 2000 ° C or less.
[Claim 8] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is heated to sublimate the Si atoms at 1550 ° C or more and 1650 ° C or less.
[Claim 9] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is heated to sublimate the Si atoms in a treatment container having at least its inner surface made of pyrolytic carbon.
[Claim 18] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the graphene precursor has a six-membered ring structure in a thickness direction, the graphene precursor consisting of C atoms in which one out of every three C atoms of the graphene precursor is connected to a Si atom of the second molecular layer, wherein a thickness of the graphene precursor in the thickness direction is equal to a thickness of one C atom.
[Claim 19] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is heated to sublimate the Si atoms from the first molecular layer in each of the steps at a temperature of 1550 to 2200 ° C to form the graphene precursor on the first molecular layer in each of the steps.
[Claim 3]
[Claim 6]
[Claim 10]
[Claim 11]
[Claim 12]
[Claim 13]
[Claim 14]
[Claim 17]
Layer stacks claimed or described, ordered top of device to substrate.
4H-SiC substrate with graphene precursor
Materials described outside the worked examples.
4H-SiC substrate
4H-SiC
graphene precursor
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1400–2000 °C | — |
Temperature |
Patent
Atlas literature
Patent
US 11,365,491Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 9(a), in the stepped structure A having steps 41F1, 41F2, 41F3, one step is composed of four molecular layers. Thus, the step height is 1 nm. Among the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
[Claim 1] A method for producing a graphene precursor on a 4 H -SiC substrate, the method comprising: providing a substrate made of 4 H -SiC, the substrate made of 4 H -SiC having steps comprising a first step, a second step and a third step, each of the steps having an upper surface with a terrace width, a step height from the first step to the second step being the same as the step height from the second step to the third step, the terrace width of the first step, the second step and the third step being the same, each of the steps comprising: a first molecular layer having the upper surface, the first molecular layer having a first stepped structure whose C atom has two dangling bonds; a second molecular layer below the first molecular layer, the second molecular layer having a second stepped structure whose C atom has two dangling bonds; a third molecular layer below the second molecular layer, the third molecular layer having a third stepped structure whose C atom has one dangling bond; and a fourth molecular layer below the third molecular layer, the fourth molecular layer having a fourth stepped structure whose C atom has one dangling bond, heating the substrate made of 4 H -SiC to sublimate Si atoms from the first molecular layer in each of the steps to form the graphene precursor on the first molecular layer in each of the steps; and stopping the heating before the graphene precursor on the first molecular layer in each of the steps becomes graphene, thereby producing the graphene precursor on the 4H-SiC substrate.
[Claim 2] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is provided with an off-angle relative to < 1-100> direction.
[Claim 4] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, further comprising an etching process performed prior to sublimating the Si atoms by heating the substrate made of 4H-SiC under a Si vapor pressure.
[Claim 7] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is heated to sublimate the Si atoms at 1400 ° C or more and 2000 ° C or less.
[Claim 8] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is heated to sublimate the Si atoms at 1550 ° C or more and 1650 ° C or less.
[Claim 9] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is heated to sublimate the Si atoms in a treatment container having at least its inner surface made of pyrolytic carbon.
[Claim 18] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the graphene precursor has a six-membered ring structure in a thickness direction, the graphene precursor consisting of C atoms in which one out of every three C atoms of the graphene precursor is connected to a Si atom of the second molecular layer, wherein a thickness of the graphene precursor in the thickness direction is equal to a thickness of one C atom.
[Claim 19] The method for producing a graphene precursor on a 4H-SiC substrate according to claim 1, wherein the substrate made of 4H-SiC is heated to sublimate the Si atoms from the first molecular layer in each of the steps at a temperature of 1550 to 2200 ° C to form the graphene precursor on the first molecular layer in each of the steps.
[Claim 3]
[Claim 6]
[Claim 10]
[Claim 11]
[Claim 12]
[Claim 13]
[Claim 14]
[Claim 17]
Layer stacks claimed or described, ordered top of device to substrate.
4H-SiC substrate with graphene precursor
Materials described outside the worked examples.
4H-SiC substrate
4H-SiC
graphene precursor
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1400–2000 °C | — |
Temperature |
graphene
pyrolytic carbon
| — |
graphene
pyrolytic carbon
| — |
graphene
pyrolytic carbon
| — |
graphene
pyrolytic carbon
| — |