Patent
US 9,562,287METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE FILM USING BORAZINE OLIGOMER AS A PRECURSOR
Myung Jong KIM, Sungchan PARK, Hyunjin CHO, Sukang BAE et al.
2017-02-07·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,562,287Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a g,,:g crv;t;We hexagonal boron nitride film for r aarjs comprising mixing a borazine oligomer with an organic solvent to form a boron nitride precursor solution; e3jugt the v-soCs inhereo: coating the boron nitride precursor solution onto a substrate; and carrying out phase transfer of the borazine oligomer in the coated boron nitride precursor solution to produce a hexagonal boron nitride film ont\sustra:te, wherein the substrate in said coating is a metal catalyst substrate, wherein said phase transfer is carried out by using thermal energy through heat treatment at-4100 C. wherein the metal cataj'st:htrate has a, th Kk-_ ness of' I00 nmL₄O um
The method for producing a boron nitride film according to claim 1, wherein the borazine oligomer is obtained by carrying out thermal oligomerization of borazine.
The method for producing a boron nitride film according to claim 1, wherein the metal of the metal catalyst substrate is at least one selected from the group consisting of nickel, palladium, platinum, copper, titanium, ruthenium, chrome, iron, aluminum, and silver.
The method for producing a boron nitride film according to claim 1, wherein the metal catalyst substrate is one treated by at least one process selected from the group consisting of annealing, electrochemical polishing and metal surface cleaning.
The method for producing a boron nitride film according to claim 1, wherein said coating is carried out under the condition of inert gas by at least one coating process selected from the group consisting of spin coating, spray coating, drop coating and dip coating.
The method for producing a boron nitride film according to claim 1, which further comprises, after said coating, baking the coated substrate to remove the organic solvent.
The method for producing a boron nitride film according to claim 1, wherein said phase transfer from the borazine oligomer to hexagonal boron nitride comprises a process using at least one type of energy selected from thermal energy, plasma, laser, electron beams, ion beams and UV irradiation.
The method for producing a boron nitride film according to claim 1, which further comprises transferring the hexagonal boron nitride film to a substrate by using a polymeric protective film.
2-3. 2 Application No.: 14/082,831 canceled
canceled
canceled
canceled
A method for producing a =,g + ulity Ig._" boron nitride film;O? j:.,e.,:gtjis comprising: mixing a borazine oligomer with an organic solvent to form a boron nitride precursor solution; and 4 Application No.: 14/082,831 coating the boron nitride precursor solution onto a substrate; depositing a metal catalyst onto the substrate coated with the boron nitride precursor solution; and carrying out phase transfer of the borazine oligomer in the coated boron nitride precursor solution to produce a hexagonal boron nitride film, wherein the substrate is formed of at least one material selected from the group consisting of silicon, silicon oxide, sapphire, quartz, glass, graphite, indium oxide, polyacrylonitrile (PAN), polyethylene terephthalate (PET), polydimethylsiloxane (PDMS), polyethylene (PE), steel and carbon fibers, wherein said phase transfer is carried out by using thermal energy through heat treatment at e42 210 01100 C.
The method for producing a boron nitride film according to claim 16, which further comprises treating the hexagonal boron nitride film with at least one solution selected from the group consisting of ammonium persulfate, ferric chloride (FeC I 3), nitric acid, hydrochloric acid and sulfuric acid etching solutions in order to remove the metal catalyst deposited as an overlayer of the hexagonal boron nitride film.
The method for producing a boron nitride film according to claim 16, wherein said deposition is carried out by at least one process selected from the group consisting of sputtering, thermal evaporation and electron beam evaporation.
The method for producing a boron nitride film according to claim 16, wherein the metal catalyst is at least one selected from the group consisting of 5 Application No.: 14/082,831 nickel, palladium, platinum, copper, titanium, ruthenium, chrome, iron, aluminum, and silver. 6
19-20. canceled
canceled
Materials described outside the worked examples.
hexagonal boron nitride film
h-BN
borazine oligomer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–2 hours | — |
Patent
Atlas literature
Patent
US 9,562,287Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a g,,:g crv;t;We hexagonal boron nitride film for r aarjs comprising mixing a borazine oligomer with an organic solvent to form a boron nitride precursor solution; e3jugt the v-soCs inhereo: coating the boron nitride precursor solution onto a substrate; and carrying out phase transfer of the borazine oligomer in the coated boron nitride precursor solution to produce a hexagonal boron nitride film ont\sustra:te, wherein the substrate in said coating is a metal catalyst substrate, wherein said phase transfer is carried out by using thermal energy through heat treatment at-4100 C. wherein the metal cataj'st:htrate has a, th Kk-_ ness of' I00 nmL₄O um
The method for producing a boron nitride film according to claim 1, wherein the borazine oligomer is obtained by carrying out thermal oligomerization of borazine.
The method for producing a boron nitride film according to claim 1, wherein the metal of the metal catalyst substrate is at least one selected from the group consisting of nickel, palladium, platinum, copper, titanium, ruthenium, chrome, iron, aluminum, and silver.
The method for producing a boron nitride film according to claim 1, wherein the metal catalyst substrate is one treated by at least one process selected from the group consisting of annealing, electrochemical polishing and metal surface cleaning.
The method for producing a boron nitride film according to claim 1, wherein said coating is carried out under the condition of inert gas by at least one coating process selected from the group consisting of spin coating, spray coating, drop coating and dip coating.
The method for producing a boron nitride film according to claim 1, which further comprises, after said coating, baking the coated substrate to remove the organic solvent.
The method for producing a boron nitride film according to claim 1, wherein said phase transfer from the borazine oligomer to hexagonal boron nitride comprises a process using at least one type of energy selected from thermal energy, plasma, laser, electron beams, ion beams and UV irradiation.
The method for producing a boron nitride film according to claim 1, which further comprises transferring the hexagonal boron nitride film to a substrate by using a polymeric protective film.
2-3. 2 Application No.: 14/082,831 canceled
canceled
canceled
canceled
A method for producing a =,g + ulity Ig._" boron nitride film;O? j:.,e.,:gtjis comprising: mixing a borazine oligomer with an organic solvent to form a boron nitride precursor solution; and 4 Application No.: 14/082,831 coating the boron nitride precursor solution onto a substrate; depositing a metal catalyst onto the substrate coated with the boron nitride precursor solution; and carrying out phase transfer of the borazine oligomer in the coated boron nitride precursor solution to produce a hexagonal boron nitride film, wherein the substrate is formed of at least one material selected from the group consisting of silicon, silicon oxide, sapphire, quartz, glass, graphite, indium oxide, polyacrylonitrile (PAN), polyethylene terephthalate (PET), polydimethylsiloxane (PDMS), polyethylene (PE), steel and carbon fibers, wherein said phase transfer is carried out by using thermal energy through heat treatment at e42 210 01100 C.
The method for producing a boron nitride film according to claim 16, which further comprises treating the hexagonal boron nitride film with at least one solution selected from the group consisting of ammonium persulfate, ferric chloride (FeC I 3), nitric acid, hydrochloric acid and sulfuric acid etching solutions in order to remove the metal catalyst deposited as an overlayer of the hexagonal boron nitride film.
The method for producing a boron nitride film according to claim 16, wherein said deposition is carried out by at least one process selected from the group consisting of sputtering, thermal evaporation and electron beam evaporation.
The method for producing a boron nitride film according to claim 16, wherein the metal catalyst is at least one selected from the group consisting of 5 Application No.: 14/082,831 nickel, palladium, platinum, copper, titanium, ruthenium, chrome, iron, aluminum, and silver. 6
19-20. canceled
canceled
Materials described outside the worked examples.
hexagonal boron nitride film
h-BN
borazine oligomer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–2 hours | — |
Patent
Atlas literature
Patent
US 9,562,287Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a g,,:g crv;t;We hexagonal boron nitride film for r aarjs comprising mixing a borazine oligomer with an organic solvent to form a boron nitride precursor solution; e3jugt the v-soCs inhereo: coating the boron nitride precursor solution onto a substrate; and carrying out phase transfer of the borazine oligomer in the coated boron nitride precursor solution to produce a hexagonal boron nitride film ont\sustra:te, wherein the substrate in said coating is a metal catalyst substrate, wherein said phase transfer is carried out by using thermal energy through heat treatment at-4100 C. wherein the metal cataj'st:htrate has a, th Kk-_ ness of' I00 nmL₄O um
The method for producing a boron nitride film according to claim 1, wherein the borazine oligomer is obtained by carrying out thermal oligomerization of borazine.
The method for producing a boron nitride film according to claim 1, wherein the metal of the metal catalyst substrate is at least one selected from the group consisting of nickel, palladium, platinum, copper, titanium, ruthenium, chrome, iron, aluminum, and silver.
The method for producing a boron nitride film according to claim 1, wherein the metal catalyst substrate is one treated by at least one process selected from the group consisting of annealing, electrochemical polishing and metal surface cleaning.
The method for producing a boron nitride film according to claim 1, wherein said coating is carried out under the condition of inert gas by at least one coating process selected from the group consisting of spin coating, spray coating, drop coating and dip coating.
The method for producing a boron nitride film according to claim 1, which further comprises, after said coating, baking the coated substrate to remove the organic solvent.
The method for producing a boron nitride film according to claim 1, wherein said phase transfer from the borazine oligomer to hexagonal boron nitride comprises a process using at least one type of energy selected from thermal energy, plasma, laser, electron beams, ion beams and UV irradiation.
The method for producing a boron nitride film according to claim 1, which further comprises transferring the hexagonal boron nitride film to a substrate by using a polymeric protective film.
2-3. 2 Application No.: 14/082,831 canceled
canceled
canceled
canceled
A method for producing a =,g + ulity Ig._" boron nitride film;O? j:.,e.,:gtjis comprising: mixing a borazine oligomer with an organic solvent to form a boron nitride precursor solution; and 4 Application No.: 14/082,831 coating the boron nitride precursor solution onto a substrate; depositing a metal catalyst onto the substrate coated with the boron nitride precursor solution; and carrying out phase transfer of the borazine oligomer in the coated boron nitride precursor solution to produce a hexagonal boron nitride film, wherein the substrate is formed of at least one material selected from the group consisting of silicon, silicon oxide, sapphire, quartz, glass, graphite, indium oxide, polyacrylonitrile (PAN), polyethylene terephthalate (PET), polydimethylsiloxane (PDMS), polyethylene (PE), steel and carbon fibers, wherein said phase transfer is carried out by using thermal energy through heat treatment at e42 210 01100 C.
The method for producing a boron nitride film according to claim 16, which further comprises treating the hexagonal boron nitride film with at least one solution selected from the group consisting of ammonium persulfate, ferric chloride (FeC I 3), nitric acid, hydrochloric acid and sulfuric acid etching solutions in order to remove the metal catalyst deposited as an overlayer of the hexagonal boron nitride film.
The method for producing a boron nitride film according to claim 16, wherein said deposition is carried out by at least one process selected from the group consisting of sputtering, thermal evaporation and electron beam evaporation.
The method for producing a boron nitride film according to claim 16, wherein the metal catalyst is at least one selected from the group consisting of 5 Application No.: 14/082,831 nickel, palladium, platinum, copper, titanium, ruthenium, chrome, iron, aluminum, and silver. 6
19-20. canceled
canceled
Materials described outside the worked examples.
hexagonal boron nitride film
h-BN
borazine oligomer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–2 hours | — |
Patent
Atlas literature
Patent
US 9,562,287Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a g,,:g crv;t;We hexagonal boron nitride film for r aarjs comprising mixing a borazine oligomer with an organic solvent to form a boron nitride precursor solution; e3jugt the v-soCs inhereo: coating the boron nitride precursor solution onto a substrate; and carrying out phase transfer of the borazine oligomer in the coated boron nitride precursor solution to produce a hexagonal boron nitride film ont\sustra:te, wherein the substrate in said coating is a metal catalyst substrate, wherein said phase transfer is carried out by using thermal energy through heat treatment at-4100 C. wherein the metal cataj'st:htrate has a, th Kk-_ ness of' I00 nmL₄O um
The method for producing a boron nitride film according to claim 1, wherein the borazine oligomer is obtained by carrying out thermal oligomerization of borazine.
The method for producing a boron nitride film according to claim 1, wherein the metal of the metal catalyst substrate is at least one selected from the group consisting of nickel, palladium, platinum, copper, titanium, ruthenium, chrome, iron, aluminum, and silver.
The method for producing a boron nitride film according to claim 1, wherein the metal catalyst substrate is one treated by at least one process selected from the group consisting of annealing, electrochemical polishing and metal surface cleaning.
The method for producing a boron nitride film according to claim 1, wherein said coating is carried out under the condition of inert gas by at least one coating process selected from the group consisting of spin coating, spray coating, drop coating and dip coating.
The method for producing a boron nitride film according to claim 1, which further comprises, after said coating, baking the coated substrate to remove the organic solvent.
The method for producing a boron nitride film according to claim 1, wherein said phase transfer from the borazine oligomer to hexagonal boron nitride comprises a process using at least one type of energy selected from thermal energy, plasma, laser, electron beams, ion beams and UV irradiation.
The method for producing a boron nitride film according to claim 1, which further comprises transferring the hexagonal boron nitride film to a substrate by using a polymeric protective film.
2-3. 2 Application No.: 14/082,831 canceled
canceled
canceled
canceled
A method for producing a =,g + ulity Ig._" boron nitride film;O? j:.,e.,:gtjis comprising: mixing a borazine oligomer with an organic solvent to form a boron nitride precursor solution; and 4 Application No.: 14/082,831 coating the boron nitride precursor solution onto a substrate; depositing a metal catalyst onto the substrate coated with the boron nitride precursor solution; and carrying out phase transfer of the borazine oligomer in the coated boron nitride precursor solution to produce a hexagonal boron nitride film, wherein the substrate is formed of at least one material selected from the group consisting of silicon, silicon oxide, sapphire, quartz, glass, graphite, indium oxide, polyacrylonitrile (PAN), polyethylene terephthalate (PET), polydimethylsiloxane (PDMS), polyethylene (PE), steel and carbon fibers, wherein said phase transfer is carried out by using thermal energy through heat treatment at e42 210 01100 C.
The method for producing a boron nitride film according to claim 16, which further comprises treating the hexagonal boron nitride film with at least one solution selected from the group consisting of ammonium persulfate, ferric chloride (FeC I 3), nitric acid, hydrochloric acid and sulfuric acid etching solutions in order to remove the metal catalyst deposited as an overlayer of the hexagonal boron nitride film.
The method for producing a boron nitride film according to claim 16, wherein said deposition is carried out by at least one process selected from the group consisting of sputtering, thermal evaporation and electron beam evaporation.
The method for producing a boron nitride film according to claim 16, wherein the metal catalyst is at least one selected from the group consisting of 5 Application No.: 14/082,831 nickel, palladium, platinum, copper, titanium, ruthenium, chrome, iron, aluminum, and silver. 6
19-20. canceled
canceled
Materials described outside the worked examples.
hexagonal boron nitride film
h-BN
borazine oligomer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–2 hours | — |
organic solvent
borazine
B₃H₆N₃
metal catalyst substrate
substrate (non-metal)
metal catalyst (deposited overlayer)
organic solvent
borazine
B₃H₆N₃
metal catalyst substrate
substrate (non-metal)
metal catalyst (deposited overlayer)
organic solvent
borazine
B₃H₆N₃
metal catalyst substrate
substrate (non-metal)
metal catalyst (deposited overlayer)
organic solvent
borazine
B₃H₆N₃
metal catalyst substrate
substrate (non-metal)
metal catalyst (deposited overlayer)