Patent
US 9,822,009METHOD FOR PRODUCING GRAPHENE
Munehito KAGAYA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,822,009Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view schematically showing a configuration of a plasma CVD film-forming device, which is used in a graphene producing method …
FIG. 2 is a block diagram schematically showing a configuration of a control part of
FIGS. 3A to 3C are views showing a process of a general graphene producing method performed in the plasma CVD film-forming device.
FIGS. 4A and 4B are views showing growth states of graphene when the number of facets is decreased in an activated catalytic metal layer.
FIGS. 5 A and 5 B are views showing growth states of graphene when a high reactivity carbon- containing gas is used.
FIG. 6 is a flowchart showing a graphene producing method according to an embodiment of the present disclosure.
FIGS. 7A and 7B are views showing a partial process of the graphene producing method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene producing method, comprising: activating a catalytic metal layer formed on a substrate; supplying and decomposing a low reactivity carbon-containing gas in a space that faces the substrate and supplying and decomposing a high reactivity carbon-containing gas different from the low reactivity carbon-containing gas, after supplying and decomposing the low reactivity carbon containing gas, in the space that faces the substrate s wherein the low reactivity carbon-containing gas includes at least one of an ethylene gas (a C l-Hg gas), a chain-type saturated hydrocarbon gas (a methane gas, an ethane gas, or a propane gas), a chain-type unsaturated hydrocarbon (double bond) gas (a propylene gas), a circular hydrocarbon gas, an aromatic hydrocarbon gas, a gas of phenols, a gas of alcohols, and a gas of ethers, and wherein the high reactivity carbon-containing gas includes at least an acetylene gas (a C zH_ gas). Currently amended
The method of Claim 1, wherein, in supplying and decomposing the low reactivity carbon-containing gas, the low reactivity carbon- containing gas is decomposed by plasma. Attorney Docket No. 34191U Response to OA mailed Previously presented
The method of Claim 1, wherein, in supplying and decomposing the high reactivity carbon-containing gas, the high reactivity carbon- containing gas is decomposed by heat. Previously presented
The method of Claim 1, wherein the temperature 500 degrees C in supplying and decomposing the supplying and decomposing the high reactivity of the substrate is between 300 degrees C and low reactivity carbon-containing gas and in carbon-containing gas. Previously presented
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
plasma CVD film-forming device
No layer stack recorded.
Materials described outside the worked examples.
low reactivity carbon-containing gas
high reactivity carbon-containing gas (acetylene)
C₂H₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
substrate temperature during graphene growth (claimed range) | 300–500 degrees C | — |
Thickness | 1–5 mm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,822,009Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view schematically showing a configuration of a plasma CVD film-forming device, which is used in a graphene producing method …
FIG. 2 is a block diagram schematically showing a configuration of a control part of
FIGS. 3A to 3C are views showing a process of a general graphene producing method performed in the plasma CVD film-forming device.
FIGS. 4A and 4B are views showing growth states of graphene when the number of facets is decreased in an activated catalytic metal layer.
FIGS. 5 A and 5 B are views showing growth states of graphene when a high reactivity carbon- containing gas is used.
FIG. 6 is a flowchart showing a graphene producing method according to an embodiment of the present disclosure.
FIGS. 7A and 7B are views showing a partial process of the graphene producing method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene producing method, comprising: activating a catalytic metal layer formed on a substrate; supplying and decomposing a low reactivity carbon-containing gas in a space that faces the substrate and supplying and decomposing a high reactivity carbon-containing gas different from the low reactivity carbon-containing gas, after supplying and decomposing the low reactivity carbon containing gas, in the space that faces the substrate s wherein the low reactivity carbon-containing gas includes at least one of an ethylene gas (a C l-Hg gas), a chain-type saturated hydrocarbon gas (a methane gas, an ethane gas, or a propane gas), a chain-type unsaturated hydrocarbon (double bond) gas (a propylene gas), a circular hydrocarbon gas, an aromatic hydrocarbon gas, a gas of phenols, a gas of alcohols, and a gas of ethers, and wherein the high reactivity carbon-containing gas includes at least an acetylene gas (a C zH_ gas). Currently amended
The method of Claim 1, wherein, in supplying and decomposing the low reactivity carbon-containing gas, the low reactivity carbon- containing gas is decomposed by plasma. Attorney Docket No. 34191U Response to OA mailed Previously presented
The method of Claim 1, wherein, in supplying and decomposing the high reactivity carbon-containing gas, the high reactivity carbon- containing gas is decomposed by heat. Previously presented
The method of Claim 1, wherein the temperature 500 degrees C in supplying and decomposing the supplying and decomposing the high reactivity of the substrate is between 300 degrees C and low reactivity carbon-containing gas and in carbon-containing gas. Previously presented
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
plasma CVD film-forming device
No layer stack recorded.
Materials described outside the worked examples.
low reactivity carbon-containing gas
high reactivity carbon-containing gas (acetylene)
C₂H₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
substrate temperature during graphene growth (claimed range) | 300–500 degrees C | — |
Thickness | 1–5 mm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,822,009Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view schematically showing a configuration of a plasma CVD film-forming device, which is used in a graphene producing method …
FIG. 2 is a block diagram schematically showing a configuration of a control part of
FIGS. 3A to 3C are views showing a process of a general graphene producing method performed in the plasma CVD film-forming device.
FIGS. 4A and 4B are views showing growth states of graphene when the number of facets is decreased in an activated catalytic metal layer.
FIGS. 5 A and 5 B are views showing growth states of graphene when a high reactivity carbon- containing gas is used.
FIG. 6 is a flowchart showing a graphene producing method according to an embodiment of the present disclosure.
FIGS. 7A and 7B are views showing a partial process of the graphene producing method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene producing method, comprising: activating a catalytic metal layer formed on a substrate; supplying and decomposing a low reactivity carbon-containing gas in a space that faces the substrate and supplying and decomposing a high reactivity carbon-containing gas different from the low reactivity carbon-containing gas, after supplying and decomposing the low reactivity carbon containing gas, in the space that faces the substrate s wherein the low reactivity carbon-containing gas includes at least one of an ethylene gas (a C l-Hg gas), a chain-type saturated hydrocarbon gas (a methane gas, an ethane gas, or a propane gas), a chain-type unsaturated hydrocarbon (double bond) gas (a propylene gas), a circular hydrocarbon gas, an aromatic hydrocarbon gas, a gas of phenols, a gas of alcohols, and a gas of ethers, and wherein the high reactivity carbon-containing gas includes at least an acetylene gas (a C zH_ gas). Currently amended
The method of Claim 1, wherein, in supplying and decomposing the low reactivity carbon-containing gas, the low reactivity carbon- containing gas is decomposed by plasma. Attorney Docket No. 34191U Response to OA mailed Previously presented
The method of Claim 1, wherein, in supplying and decomposing the high reactivity carbon-containing gas, the high reactivity carbon- containing gas is decomposed by heat. Previously presented
The method of Claim 1, wherein the temperature 500 degrees C in supplying and decomposing the supplying and decomposing the high reactivity of the substrate is between 300 degrees C and low reactivity carbon-containing gas and in carbon-containing gas. Previously presented
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
plasma CVD film-forming device
No layer stack recorded.
Materials described outside the worked examples.
low reactivity carbon-containing gas
high reactivity carbon-containing gas (acetylene)
C₂H₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
substrate temperature during graphene growth (claimed range) | 300–500 degrees C | — |
Thickness | 1–5 mm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,822,009Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view schematically showing a configuration of a plasma CVD film-forming device, which is used in a graphene producing method …
FIG. 2 is a block diagram schematically showing a configuration of a control part of
FIGS. 3A to 3C are views showing a process of a general graphene producing method performed in the plasma CVD film-forming device.
FIGS. 4A and 4B are views showing growth states of graphene when the number of facets is decreased in an activated catalytic metal layer.
FIGS. 5 A and 5 B are views showing growth states of graphene when a high reactivity carbon- containing gas is used.
FIG. 6 is a flowchart showing a graphene producing method according to an embodiment of the present disclosure.
FIGS. 7A and 7B are views showing a partial process of the graphene producing method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene producing method, comprising: activating a catalytic metal layer formed on a substrate; supplying and decomposing a low reactivity carbon-containing gas in a space that faces the substrate and supplying and decomposing a high reactivity carbon-containing gas different from the low reactivity carbon-containing gas, after supplying and decomposing the low reactivity carbon containing gas, in the space that faces the substrate s wherein the low reactivity carbon-containing gas includes at least one of an ethylene gas (a C l-Hg gas), a chain-type saturated hydrocarbon gas (a methane gas, an ethane gas, or a propane gas), a chain-type unsaturated hydrocarbon (double bond) gas (a propylene gas), a circular hydrocarbon gas, an aromatic hydrocarbon gas, a gas of phenols, a gas of alcohols, and a gas of ethers, and wherein the high reactivity carbon-containing gas includes at least an acetylene gas (a C zH_ gas). Currently amended
The method of Claim 1, wherein, in supplying and decomposing the low reactivity carbon-containing gas, the low reactivity carbon- containing gas is decomposed by plasma. Attorney Docket No. 34191U Response to OA mailed Previously presented
The method of Claim 1, wherein, in supplying and decomposing the high reactivity carbon-containing gas, the high reactivity carbon- containing gas is decomposed by heat. Previously presented
The method of Claim 1, wherein the temperature 500 degrees C in supplying and decomposing the supplying and decomposing the high reactivity of the substrate is between 300 degrees C and low reactivity carbon-containing gas and in carbon-containing gas. Previously presented
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
plasma CVD film-forming device
No layer stack recorded.
Materials described outside the worked examples.
low reactivity carbon-containing gas
high reactivity carbon-containing gas (acetylene)
C₂H₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
substrate temperature during graphene growth (claimed range) | 300–500 degrees C | — |
Thickness | 1–5 mm |
Related documents with shared materials, methods, properties, or citations.
catalytic metal layer
graphene
ethylene gas
C₂H₄
methane gas
CH₄
ethane gas
C₂H₆
propane gas
C₃H₈
propylene gas
C₃H₆
| — |
— | 0.7–2 eV | — |
— | 500–4000 W | — |
— | 1000–3000 W | — |
Duration | 1–15 minutes | — |
Duration | 5–10 minutes | — |
Duration | 1–120 minutes | — |
catalytic metal layer
graphene
ethylene gas
C₂H₄
methane gas
CH₄
ethane gas
C₂H₆
propane gas
C₃H₈
propylene gas
C₃H₆
| — |
— | 0.7–2 eV | — |
— | 500–4000 W | — |
— | 1000–3000 W | — |
Duration | 1–15 minutes | — |
Duration | 5–10 minutes | — |
Duration | 1–120 minutes | — |
catalytic metal layer
graphene
ethylene gas
C₂H₄
methane gas
CH₄
ethane gas
C₂H₆
propane gas
C₃H₈
propylene gas
C₃H₆
| — |
— | 0.7–2 eV | — |
— | 500–4000 W | — |
— | 1000–3000 W | — |
Duration | 1–15 minutes | — |
Duration | 5–10 minutes | — |
Duration | 1–120 minutes | — |
catalytic metal layer
graphene
ethylene gas
C₂H₄
methane gas
CH₄
ethane gas
C₂H₆
propane gas
C₃H₈
propylene gas
C₃H₆
| — |
— | 0.7–2 eV | — |
— | 500–4000 W | — |
— | 1000–3000 W | — |
Duration | 1–15 minutes | — |
Duration | 5–10 minutes | — |
Duration | 1–120 minutes | — |