Patent
US 10,685,839METHOD FOR IMPLEMENTING AND REGULATING PATTERNING OF A GRAPHENE FILM BY ULTRAVIOLET PHOTO-OXIDATION
Haihua TAO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,685,839Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing the principle for implementing and regulating patterning of a graphene film by using a xenon lamp excimer ultraviolet …
FIG. 2 by using the xenon lamp excimer ultraviolet photo-oxidation method without a magnetic field;
FIG. 3 is a pattern of the graphene film prepared by the hard nickel mask of
FIG. 4 with a non-uniform magnetic field applied in a vertical direction of a substrate;
FIG. 5 is a pattern of the graphene film prepared by using a xenon lamp excimer ultraviolet photo-oxidation method and a stainless steel mask of
FIG. 6 is a pattern of the graphene film prepared by using xenon excimer ultraviolet photo-oxidation and the nickel mask of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for implementing and regulating patterning of a graphene film by ultraviolet photooxidation, comprising the steps of: step 1: disposing a hard mask with a micron-scale pattern structure closely on a Si O 2/Si substrate transferred with a graphene film; step 2: disposing the Si O 2/Si substrate transferred with the graphene film and the hard mask in the step 1 on a sample holder of a xenon lamp excimer ultraviolet photo-oxidation vacuum apparatus comprising a vacuum chamber filled with gases of nitrogen and oxygen; adjusting the distance between the sample holder and a lower surface of a xenon lamp excimer discharge tube that emits ultraviolet light to decompose molecules of the oxygen into oxygen excitons and ozone; and controlling the oxygen pressure of the xenon excimer ultraviolet photo-oxidation vacuum apparatus; step 3: disposing a pe rm anent magnet or other magnetic field generating devices under the SiO 2/Si substrate or at peripheral thereof to form a non-uniform magnetic field, so that a direction of [[a]] the magnetic field is perpendicular to a surface of the graphene film, wherein paramagnetic oxygen excitons and paramagnetic oxygen molecules are controlled by the magnetic field to move toward the graphene film, while diamagnetic ozone molecules and the nitrogen are controlled by the magnetic field to move away from the graphene film; and step 4: regulating etching process for the graphene film by changing intensity and the direction of the magnetic field in the step 3 to be parallel to the surface of the graphene film to change moving direction and moving speed of the oxygen excitons and the oxygen, thereby obtaining patterns with different pattern structures. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein the material of the hard mask in the step 1 is one selected from the group consisting of metal, ferromagnetic material, semiconductor and insulator; and the hard mask has a thickness and the thickness of the hard mask is related to the pattern structure of the hard mask. Previously presented
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein the xenon lamp excimer ultraviolet photooxidation vacuum apparatus in the step 2 comprises: the xenon lamp excimer discharge tube; and the sample holder, wherein the xenon lamp excimer discharge tube and the sample holder are located in the vacuum chamber; the sample holder is located under the xenon lamp excimer discharge tube; and inlets and outlets for oxygen and nitrogen are provided at a side of the vacuum chamber, respectively. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein a wavelength of ultraviolet light emitted by the xenon lamp excimer discharge tube in the step 2 is 172 nm; and the oxygen pressure does not exceed 100 Pa. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein the permanent magnet in the step 3 is neodymium iron boron; and the permanent magnet has a S pole or a N pole, and the S pole or the N pole of the pe rm anent magnet is disposed to face the graphene film. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein the hard mask in the step 1 is made of a hard material which is opaque in a vacuum ultraviolet band; the surface and side walls of the hard mask are smooth; and if a magnetic field perpendicular to the surface of the graphene is applied, the hard mask is also made of a material transparent to the vacuum ultraviolet band as the magnetic field has a binding ability to the oxygen excitons. Previously presented
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein in the step 4, the moving direction and the moving speed of oxygen excitons and oxygen are varied by a non- uniform magnetic field, so that [[a]]an ultraviolet photo-oxidation process is regulated to obtain a graphene film pattern with a pattern structure different from that of the hard mask. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein a light source for generating ultraviolet light in the step 2 comprises: a light source capable of decomposing oxygen to oxygen atoms, and the light source can be a low pressure mercury lamp; and wherein the other magnetic field generating devices in the step 3 comprises a carrier capable of providing a non-uniform magnetic field, and the carrier can be a device for generating a magnetic field through an electromagnetic effect. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
patterned graphene film on SiO₂/Si substrate
Materials described outside the worked examples.
graphene film
SiO₂/Si substrate with transferred graphene film
neodymium iron boron permanent magnet
Nd₂Fe₁₄B
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | ≤ 1 Pa | — |
Patent
Atlas literature
Patent
US 10,685,839Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing the principle for implementing and regulating patterning of a graphene film by using a xenon lamp excimer ultraviolet …
FIG. 2 by using the xenon lamp excimer ultraviolet photo-oxidation method without a magnetic field;
FIG. 3 is a pattern of the graphene film prepared by the hard nickel mask of
FIG. 4 with a non-uniform magnetic field applied in a vertical direction of a substrate;
FIG. 5 is a pattern of the graphene film prepared by using a xenon lamp excimer ultraviolet photo-oxidation method and a stainless steel mask of
FIG. 6 is a pattern of the graphene film prepared by using xenon excimer ultraviolet photo-oxidation and the nickel mask of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for implementing and regulating patterning of a graphene film by ultraviolet photooxidation, comprising the steps of: step 1: disposing a hard mask with a micron-scale pattern structure closely on a Si O 2/Si substrate transferred with a graphene film; step 2: disposing the Si O 2/Si substrate transferred with the graphene film and the hard mask in the step 1 on a sample holder of a xenon lamp excimer ultraviolet photo-oxidation vacuum apparatus comprising a vacuum chamber filled with gases of nitrogen and oxygen; adjusting the distance between the sample holder and a lower surface of a xenon lamp excimer discharge tube that emits ultraviolet light to decompose molecules of the oxygen into oxygen excitons and ozone; and controlling the oxygen pressure of the xenon excimer ultraviolet photo-oxidation vacuum apparatus; step 3: disposing a pe rm anent magnet or other magnetic field generating devices under the SiO 2/Si substrate or at peripheral thereof to form a non-uniform magnetic field, so that a direction of [[a]] the magnetic field is perpendicular to a surface of the graphene film, wherein paramagnetic oxygen excitons and paramagnetic oxygen molecules are controlled by the magnetic field to move toward the graphene film, while diamagnetic ozone molecules and the nitrogen are controlled by the magnetic field to move away from the graphene film; and step 4: regulating etching process for the graphene film by changing intensity and the direction of the magnetic field in the step 3 to be parallel to the surface of the graphene film to change moving direction and moving speed of the oxygen excitons and the oxygen, thereby obtaining patterns with different pattern structures. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein the material of the hard mask in the step 1 is one selected from the group consisting of metal, ferromagnetic material, semiconductor and insulator; and the hard mask has a thickness and the thickness of the hard mask is related to the pattern structure of the hard mask. Previously presented
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein the xenon lamp excimer ultraviolet photooxidation vacuum apparatus in the step 2 comprises: the xenon lamp excimer discharge tube; and the sample holder, wherein the xenon lamp excimer discharge tube and the sample holder are located in the vacuum chamber; the sample holder is located under the xenon lamp excimer discharge tube; and inlets and outlets for oxygen and nitrogen are provided at a side of the vacuum chamber, respectively. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein a wavelength of ultraviolet light emitted by the xenon lamp excimer discharge tube in the step 2 is 172 nm; and the oxygen pressure does not exceed 100 Pa. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein the permanent magnet in the step 3 is neodymium iron boron; and the permanent magnet has a S pole or a N pole, and the S pole or the N pole of the pe rm anent magnet is disposed to face the graphene film. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein the hard mask in the step 1 is made of a hard material which is opaque in a vacuum ultraviolet band; the surface and side walls of the hard mask are smooth; and if a magnetic field perpendicular to the surface of the graphene is applied, the hard mask is also made of a material transparent to the vacuum ultraviolet band as the magnetic field has a binding ability to the oxygen excitons. Previously presented
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein in the step 4, the moving direction and the moving speed of oxygen excitons and oxygen are varied by a non- uniform magnetic field, so that [[a]]an ultraviolet photo-oxidation process is regulated to obtain a graphene film pattern with a pattern structure different from that of the hard mask. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein a light source for generating ultraviolet light in the step 2 comprises: a light source capable of decomposing oxygen to oxygen atoms, and the light source can be a low pressure mercury lamp; and wherein the other magnetic field generating devices in the step 3 comprises a carrier capable of providing a non-uniform magnetic field, and the carrier can be a device for generating a magnetic field through an electromagnetic effect. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
patterned graphene film on SiO₂/Si substrate
Materials described outside the worked examples.
graphene film
SiO₂/Si substrate with transferred graphene film
neodymium iron boron permanent magnet
Nd₂Fe₁₄B
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | ≤ 1 Pa | — |
Patent
Atlas literature
Patent
US 10,685,839Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing the principle for implementing and regulating patterning of a graphene film by using a xenon lamp excimer ultraviolet …
FIG. 2 by using the xenon lamp excimer ultraviolet photo-oxidation method without a magnetic field;
FIG. 3 is a pattern of the graphene film prepared by the hard nickel mask of
FIG. 4 with a non-uniform magnetic field applied in a vertical direction of a substrate;
FIG. 5 is a pattern of the graphene film prepared by using a xenon lamp excimer ultraviolet photo-oxidation method and a stainless steel mask of
FIG. 6 is a pattern of the graphene film prepared by using xenon excimer ultraviolet photo-oxidation and the nickel mask of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for implementing and regulating patterning of a graphene film by ultraviolet photooxidation, comprising the steps of: step 1: disposing a hard mask with a micron-scale pattern structure closely on a Si O 2/Si substrate transferred with a graphene film; step 2: disposing the Si O 2/Si substrate transferred with the graphene film and the hard mask in the step 1 on a sample holder of a xenon lamp excimer ultraviolet photo-oxidation vacuum apparatus comprising a vacuum chamber filled with gases of nitrogen and oxygen; adjusting the distance between the sample holder and a lower surface of a xenon lamp excimer discharge tube that emits ultraviolet light to decompose molecules of the oxygen into oxygen excitons and ozone; and controlling the oxygen pressure of the xenon excimer ultraviolet photo-oxidation vacuum apparatus; step 3: disposing a pe rm anent magnet or other magnetic field generating devices under the SiO 2/Si substrate or at peripheral thereof to form a non-uniform magnetic field, so that a direction of [[a]] the magnetic field is perpendicular to a surface of the graphene film, wherein paramagnetic oxygen excitons and paramagnetic oxygen molecules are controlled by the magnetic field to move toward the graphene film, while diamagnetic ozone molecules and the nitrogen are controlled by the magnetic field to move away from the graphene film; and step 4: regulating etching process for the graphene film by changing intensity and the direction of the magnetic field in the step 3 to be parallel to the surface of the graphene film to change moving direction and moving speed of the oxygen excitons and the oxygen, thereby obtaining patterns with different pattern structures. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein the material of the hard mask in the step 1 is one selected from the group consisting of metal, ferromagnetic material, semiconductor and insulator; and the hard mask has a thickness and the thickness of the hard mask is related to the pattern structure of the hard mask. Previously presented
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein the xenon lamp excimer ultraviolet photooxidation vacuum apparatus in the step 2 comprises: the xenon lamp excimer discharge tube; and the sample holder, wherein the xenon lamp excimer discharge tube and the sample holder are located in the vacuum chamber; the sample holder is located under the xenon lamp excimer discharge tube; and inlets and outlets for oxygen and nitrogen are provided at a side of the vacuum chamber, respectively. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein a wavelength of ultraviolet light emitted by the xenon lamp excimer discharge tube in the step 2 is 172 nm; and the oxygen pressure does not exceed 100 Pa. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein the permanent magnet in the step 3 is neodymium iron boron; and the permanent magnet has a S pole or a N pole, and the S pole or the N pole of the pe rm anent magnet is disposed to face the graphene film. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein the hard mask in the step 1 is made of a hard material which is opaque in a vacuum ultraviolet band; the surface and side walls of the hard mask are smooth; and if a magnetic field perpendicular to the surface of the graphene is applied, the hard mask is also made of a material transparent to the vacuum ultraviolet band as the magnetic field has a binding ability to the oxygen excitons. Previously presented
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein in the step 4, the moving direction and the moving speed of oxygen excitons and oxygen are varied by a non- uniform magnetic field, so that [[a]]an ultraviolet photo-oxidation process is regulated to obtain a graphene film pattern with a pattern structure different from that of the hard mask. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein a light source for generating ultraviolet light in the step 2 comprises: a light source capable of decomposing oxygen to oxygen atoms, and the light source can be a low pressure mercury lamp; and wherein the other magnetic field generating devices in the step 3 comprises a carrier capable of providing a non-uniform magnetic field, and the carrier can be a device for generating a magnetic field through an electromagnetic effect. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
patterned graphene film on SiO₂/Si substrate
Materials described outside the worked examples.
graphene film
SiO₂/Si substrate with transferred graphene film
neodymium iron boron permanent magnet
Nd₂Fe₁₄B
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | ≤ 1 Pa | — |
Patent
Atlas literature
Patent
US 10,685,839Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing the principle for implementing and regulating patterning of a graphene film by using a xenon lamp excimer ultraviolet …
FIG. 2 by using the xenon lamp excimer ultraviolet photo-oxidation method without a magnetic field;
FIG. 3 is a pattern of the graphene film prepared by the hard nickel mask of
FIG. 4 with a non-uniform magnetic field applied in a vertical direction of a substrate;
FIG. 5 is a pattern of the graphene film prepared by using a xenon lamp excimer ultraviolet photo-oxidation method and a stainless steel mask of
FIG. 6 is a pattern of the graphene film prepared by using xenon excimer ultraviolet photo-oxidation and the nickel mask of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for implementing and regulating patterning of a graphene film by ultraviolet photooxidation, comprising the steps of: step 1: disposing a hard mask with a micron-scale pattern structure closely on a Si O 2/Si substrate transferred with a graphene film; step 2: disposing the Si O 2/Si substrate transferred with the graphene film and the hard mask in the step 1 on a sample holder of a xenon lamp excimer ultraviolet photo-oxidation vacuum apparatus comprising a vacuum chamber filled with gases of nitrogen and oxygen; adjusting the distance between the sample holder and a lower surface of a xenon lamp excimer discharge tube that emits ultraviolet light to decompose molecules of the oxygen into oxygen excitons and ozone; and controlling the oxygen pressure of the xenon excimer ultraviolet photo-oxidation vacuum apparatus; step 3: disposing a pe rm anent magnet or other magnetic field generating devices under the SiO 2/Si substrate or at peripheral thereof to form a non-uniform magnetic field, so that a direction of [[a]] the magnetic field is perpendicular to a surface of the graphene film, wherein paramagnetic oxygen excitons and paramagnetic oxygen molecules are controlled by the magnetic field to move toward the graphene film, while diamagnetic ozone molecules and the nitrogen are controlled by the magnetic field to move away from the graphene film; and step 4: regulating etching process for the graphene film by changing intensity and the direction of the magnetic field in the step 3 to be parallel to the surface of the graphene film to change moving direction and moving speed of the oxygen excitons and the oxygen, thereby obtaining patterns with different pattern structures. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein the material of the hard mask in the step 1 is one selected from the group consisting of metal, ferromagnetic material, semiconductor and insulator; and the hard mask has a thickness and the thickness of the hard mask is related to the pattern structure of the hard mask. Previously presented
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein the xenon lamp excimer ultraviolet photooxidation vacuum apparatus in the step 2 comprises: the xenon lamp excimer discharge tube; and the sample holder, wherein the xenon lamp excimer discharge tube and the sample holder are located in the vacuum chamber; the sample holder is located under the xenon lamp excimer discharge tube; and inlets and outlets for oxygen and nitrogen are provided at a side of the vacuum chamber, respectively. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein a wavelength of ultraviolet light emitted by the xenon lamp excimer discharge tube in the step 2 is 172 nm; and the oxygen pressure does not exceed 100 Pa. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein the permanent magnet in the step 3 is neodymium iron boron; and the permanent magnet has a S pole or a N pole, and the S pole or the N pole of the pe rm anent magnet is disposed to face the graphene film. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein the hard mask in the step 1 is made of a hard material which is opaque in a vacuum ultraviolet band; the surface and side walls of the hard mask are smooth; and if a magnetic field perpendicular to the surface of the graphene is applied, the hard mask is also made of a material transparent to the vacuum ultraviolet band as the magnetic field has a binding ability to the oxygen excitons. Previously presented
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein in the step 4, the moving direction and the moving speed of oxygen excitons and oxygen are varied by a non- uniform magnetic field, so that [[a]]an ultraviolet photo-oxidation process is regulated to obtain a graphene film pattern with a pattern structure different from that of the hard mask. Currently amended
The method for implementing and regulating patterning of the graphene film by ultraviolet photo-oxidation according to claim 1, wherein a light source for generating ultraviolet light in the step 2 comprises: a light source capable of decomposing oxygen to oxygen atoms, and the light source can be a low pressure mercury lamp; and wherein the other magnetic field generating devices in the step 3 comprises a carrier capable of providing a non-uniform magnetic field, and the carrier can be a device for generating a magnetic field through an electromagnetic effect. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
patterned graphene film on SiO₂/Si substrate
Materials described outside the worked examples.
graphene film
SiO₂/Si substrate with transferred graphene film
neodymium iron boron permanent magnet
Nd₂Fe₁₄B
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | ≤ 1 Pa | — |