Patent
US 9,831,452METHOD FOR FORMING PN JUNCTION IN GRAPHENE WITH APPLICATION OF DNA AND PN JUNCTION STRUCTURE FORMED USING THE SAME
Chulki KIM
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,831,452Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 4b and 4c to be described below. Referring to FIG 4b, according to an embodiment, a region 43 where a DNA molecule is adsorbed, a region 44 where a DNA …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended): A method for forming a PN junction in graphene, the method comprising: forming by lithography a graphene layer pattern having a first partial region and a second partial region; and adsorbing a DNA molecule layer on the second partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the second partial region with a predetermined doping property upon adsorption, wherein the first partial region, on which the DNA molecule layer is not adsorbed, has a doping property different from the predetermined doping property.
: The method for forming the PN junction in graphene according to claim 1, further comprising: controlling a base ratio of the nucleotide sequence structure in the DNA molecule so as to achieve the predetermined doping property.
: The method for forming the PN junction in graphene according to claim 1, further comprising: forming a passivation layer on the graphene layer; patterning the passivation layer such that the passivation layer is selectively removed from the second partial region of the graphene layer; and 2 Application No. 14/282,026 adsorbing a DNA molecule on the graphene layer and the patterned passivation layer to obtain the predetermined doping property in the second partial region and to obtain the doping property different from the predetermined doping property in the first partial region.
: The method for forming the PN junction in graphene according to claim 1, further comprising: before adsorbing the DNA molecule layer on the graphene layer, forming a source electrode and a drain electrode in contact with the graphene layer at both sides of the graphene layer, the source electrode and the drain electrode being spaced apart from each other.
: The method for forming the PN junction in graphene according to claim 1, wherein the first partial region is disposed between the second partial region and a third partial region with the predetermined doping property.
: The method for forming the PN junction in graphene according to claim 1, wherein the second partial region is disposed between the first partial region and a third partial region with a doping property different from the predetermined doping property.
: The method for forming the PN junction in graphene according to claim 1, wherein the second partial region where the DNA molecule layer is located among the graphene layer has an n-type semiconductor property.
: The method for forming the PN junction in graphene according to claim 1, wherein the first partial region, on which the DNA molecule layer is not adsorbed, has a doping property opposite to the predetermined doping property.
. canceled
: A PN junction structure comprising: SVG 14282026.04-25-2017.J₁XQPW₃GRXEAPX4.CLM.1.svg 0.16 1.42 Black and white a DNA molecule layer located on a partial region of the graphene layer and having a predetermined nucleotide sequence structure, wherein the partial region of the graphene layer has a semiconductor property determined by the nucleotide sequence structure of the DNA molecule layer. withdrawn
: The PN junction structure according to claim 7, wherein the graphene layer comprises at least one first region where the DNA molecule layer is not formed and at least one second region where the DNA molecule layer is formed. withdrawn
: The PN junction structure according to claim 7, wherein the partial region where the DNA molecule layer is located among the graphene layer has an n-type semiconductor property. withdrawn
: The PN junction structure according to claim 7, further comprising: a passivation layer located on the partial region of the graphene layer and interposed between the graphene layer and the DNA molecule layer. withdrawn
: The PN junction structure according to claim 7, further comprising: 3 Application No. 14/282,026 a source electrode disposed in contact with the graphene layer at one side of the graphene layer; and a drain electrode disposed in contact with the graphene layer at other side of the graphene layer, the drain electrode being spaced apart from the source electrode. withdrawn
: A method for forming a PN junction in graphene, the method comprising: forming a graphene layer having a first partial region and a second partial region; and adsorbing a DNA molecule layer on the second partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the second partial region with a predetermined Fermi level (E F) upon adsorption, wherein the first partial region, on which the DNA molecule layer is not adsorbed, has a Fermi level (E F) different from that of the second partial region, thereby forming a PN junction between the first partial region and the second partial region.
: The method for forming the PN junction in graphene according to claim 15, wherein the first partial region is disposed between the second partial region and a third partial region with a Fermi level (E F) the same as that of the second partial region.
: The method for forming the PN junction in graphene according to claim 15, wherein the second partial region is disposed between the first partial region and a third partial region with a Fermi level (E F) different from that of the second partial region.
: The method for forming the PN junction in graphene according to claim 15, wherein the second partial region has an n-type semiconductor property where the DNA molecule layer is adsorbed thereon.
Layer stacks claimed or described, ordered top of device to substrate.
graphene PN junction/transistor
Materials described outside the worked examples.
graphene
C
DNA molecule layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dirac point (minimum Ids gate voltage) shift with DNA G/C ratio | — | C |
Table 1
11 through 14 represent a measurement result of graphene on which DNA #1 though DNA #4 shown in the following Table 1 are adsorbed, respectively.
p. 5
Patent
Atlas literature
Patent
US 9,831,452Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 4b and 4c to be described below. Referring to FIG 4b, according to an embodiment, a region 43 where a DNA molecule is adsorbed, a region 44 where a DNA …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended): A method for forming a PN junction in graphene, the method comprising: forming by lithography a graphene layer pattern having a first partial region and a second partial region; and adsorbing a DNA molecule layer on the second partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the second partial region with a predetermined doping property upon adsorption, wherein the first partial region, on which the DNA molecule layer is not adsorbed, has a doping property different from the predetermined doping property.
: The method for forming the PN junction in graphene according to claim 1, further comprising: controlling a base ratio of the nucleotide sequence structure in the DNA molecule so as to achieve the predetermined doping property.
: The method for forming the PN junction in graphene according to claim 1, further comprising: forming a passivation layer on the graphene layer; patterning the passivation layer such that the passivation layer is selectively removed from the second partial region of the graphene layer; and 2 Application No. 14/282,026 adsorbing a DNA molecule on the graphene layer and the patterned passivation layer to obtain the predetermined doping property in the second partial region and to obtain the doping property different from the predetermined doping property in the first partial region.
: The method for forming the PN junction in graphene according to claim 1, further comprising: before adsorbing the DNA molecule layer on the graphene layer, forming a source electrode and a drain electrode in contact with the graphene layer at both sides of the graphene layer, the source electrode and the drain electrode being spaced apart from each other.
: The method for forming the PN junction in graphene according to claim 1, wherein the first partial region is disposed between the second partial region and a third partial region with the predetermined doping property.
: The method for forming the PN junction in graphene according to claim 1, wherein the second partial region is disposed between the first partial region and a third partial region with a doping property different from the predetermined doping property.
: The method for forming the PN junction in graphene according to claim 1, wherein the second partial region where the DNA molecule layer is located among the graphene layer has an n-type semiconductor property.
: The method for forming the PN junction in graphene according to claim 1, wherein the first partial region, on which the DNA molecule layer is not adsorbed, has a doping property opposite to the predetermined doping property.
. canceled
: A PN junction structure comprising: SVG 14282026.04-25-2017.J₁XQPW₃GRXEAPX4.CLM.1.svg 0.16 1.42 Black and white a DNA molecule layer located on a partial region of the graphene layer and having a predetermined nucleotide sequence structure, wherein the partial region of the graphene layer has a semiconductor property determined by the nucleotide sequence structure of the DNA molecule layer. withdrawn
: The PN junction structure according to claim 7, wherein the graphene layer comprises at least one first region where the DNA molecule layer is not formed and at least one second region where the DNA molecule layer is formed. withdrawn
: The PN junction structure according to claim 7, wherein the partial region where the DNA molecule layer is located among the graphene layer has an n-type semiconductor property. withdrawn
: The PN junction structure according to claim 7, further comprising: a passivation layer located on the partial region of the graphene layer and interposed between the graphene layer and the DNA molecule layer. withdrawn
: The PN junction structure according to claim 7, further comprising: 3 Application No. 14/282,026 a source electrode disposed in contact with the graphene layer at one side of the graphene layer; and a drain electrode disposed in contact with the graphene layer at other side of the graphene layer, the drain electrode being spaced apart from the source electrode. withdrawn
: A method for forming a PN junction in graphene, the method comprising: forming a graphene layer having a first partial region and a second partial region; and adsorbing a DNA molecule layer on the second partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the second partial region with a predetermined Fermi level (E F) upon adsorption, wherein the first partial region, on which the DNA molecule layer is not adsorbed, has a Fermi level (E F) different from that of the second partial region, thereby forming a PN junction between the first partial region and the second partial region.
: The method for forming the PN junction in graphene according to claim 15, wherein the first partial region is disposed between the second partial region and a third partial region with a Fermi level (E F) the same as that of the second partial region.
: The method for forming the PN junction in graphene according to claim 15, wherein the second partial region is disposed between the first partial region and a third partial region with a Fermi level (E F) different from that of the second partial region.
: The method for forming the PN junction in graphene according to claim 15, wherein the second partial region has an n-type semiconductor property where the DNA molecule layer is adsorbed thereon.
Layer stacks claimed or described, ordered top of device to substrate.
graphene PN junction/transistor
Materials described outside the worked examples.
graphene
C
DNA molecule layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dirac point (minimum Ids gate voltage) shift with DNA G/C ratio | — | C |
Table 1
11 through 14 represent a measurement result of graphene on which DNA #1 though DNA #4 shown in the following Table 1 are adsorbed, respectively.
p. 5
Patent
Atlas literature
Patent
US 9,831,452Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 4b and 4c to be described below. Referring to FIG 4b, according to an embodiment, a region 43 where a DNA molecule is adsorbed, a region 44 where a DNA …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended): A method for forming a PN junction in graphene, the method comprising: forming by lithography a graphene layer pattern having a first partial region and a second partial region; and adsorbing a DNA molecule layer on the second partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the second partial region with a predetermined doping property upon adsorption, wherein the first partial region, on which the DNA molecule layer is not adsorbed, has a doping property different from the predetermined doping property.
: The method for forming the PN junction in graphene according to claim 1, further comprising: controlling a base ratio of the nucleotide sequence structure in the DNA molecule so as to achieve the predetermined doping property.
: The method for forming the PN junction in graphene according to claim 1, further comprising: forming a passivation layer on the graphene layer; patterning the passivation layer such that the passivation layer is selectively removed from the second partial region of the graphene layer; and 2 Application No. 14/282,026 adsorbing a DNA molecule on the graphene layer and the patterned passivation layer to obtain the predetermined doping property in the second partial region and to obtain the doping property different from the predetermined doping property in the first partial region.
: The method for forming the PN junction in graphene according to claim 1, further comprising: before adsorbing the DNA molecule layer on the graphene layer, forming a source electrode and a drain electrode in contact with the graphene layer at both sides of the graphene layer, the source electrode and the drain electrode being spaced apart from each other.
: The method for forming the PN junction in graphene according to claim 1, wherein the first partial region is disposed between the second partial region and a third partial region with the predetermined doping property.
: The method for forming the PN junction in graphene according to claim 1, wherein the second partial region is disposed between the first partial region and a third partial region with a doping property different from the predetermined doping property.
: The method for forming the PN junction in graphene according to claim 1, wherein the second partial region where the DNA molecule layer is located among the graphene layer has an n-type semiconductor property.
: The method for forming the PN junction in graphene according to claim 1, wherein the first partial region, on which the DNA molecule layer is not adsorbed, has a doping property opposite to the predetermined doping property.
. canceled
: A PN junction structure comprising: SVG 14282026.04-25-2017.J₁XQPW₃GRXEAPX4.CLM.1.svg 0.16 1.42 Black and white a DNA molecule layer located on a partial region of the graphene layer and having a predetermined nucleotide sequence structure, wherein the partial region of the graphene layer has a semiconductor property determined by the nucleotide sequence structure of the DNA molecule layer. withdrawn
: The PN junction structure according to claim 7, wherein the graphene layer comprises at least one first region where the DNA molecule layer is not formed and at least one second region where the DNA molecule layer is formed. withdrawn
: The PN junction structure according to claim 7, wherein the partial region where the DNA molecule layer is located among the graphene layer has an n-type semiconductor property. withdrawn
: The PN junction structure according to claim 7, further comprising: a passivation layer located on the partial region of the graphene layer and interposed between the graphene layer and the DNA molecule layer. withdrawn
: The PN junction structure according to claim 7, further comprising: 3 Application No. 14/282,026 a source electrode disposed in contact with the graphene layer at one side of the graphene layer; and a drain electrode disposed in contact with the graphene layer at other side of the graphene layer, the drain electrode being spaced apart from the source electrode. withdrawn
: A method for forming a PN junction in graphene, the method comprising: forming a graphene layer having a first partial region and a second partial region; and adsorbing a DNA molecule layer on the second partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the second partial region with a predetermined Fermi level (E F) upon adsorption, wherein the first partial region, on which the DNA molecule layer is not adsorbed, has a Fermi level (E F) different from that of the second partial region, thereby forming a PN junction between the first partial region and the second partial region.
: The method for forming the PN junction in graphene according to claim 15, wherein the first partial region is disposed between the second partial region and a third partial region with a Fermi level (E F) the same as that of the second partial region.
: The method for forming the PN junction in graphene according to claim 15, wherein the second partial region is disposed between the first partial region and a third partial region with a Fermi level (E F) different from that of the second partial region.
: The method for forming the PN junction in graphene according to claim 15, wherein the second partial region has an n-type semiconductor property where the DNA molecule layer is adsorbed thereon.
Layer stacks claimed or described, ordered top of device to substrate.
graphene PN junction/transistor
Materials described outside the worked examples.
graphene
C
DNA molecule layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dirac point (minimum Ids gate voltage) shift with DNA G/C ratio | — | C |
Table 1
11 through 14 represent a measurement result of graphene on which DNA #1 though DNA #4 shown in the following Table 1 are adsorbed, respectively.
p. 5
Patent
Atlas literature
Patent
US 9,831,452Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 4b and 4c to be described below. Referring to FIG 4b, according to an embodiment, a region 43 where a DNA molecule is adsorbed, a region 44 where a DNA …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended): A method for forming a PN junction in graphene, the method comprising: forming by lithography a graphene layer pattern having a first partial region and a second partial region; and adsorbing a DNA molecule layer on the second partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the second partial region with a predetermined doping property upon adsorption, wherein the first partial region, on which the DNA molecule layer is not adsorbed, has a doping property different from the predetermined doping property.
: The method for forming the PN junction in graphene according to claim 1, further comprising: controlling a base ratio of the nucleotide sequence structure in the DNA molecule so as to achieve the predetermined doping property.
: The method for forming the PN junction in graphene according to claim 1, further comprising: forming a passivation layer on the graphene layer; patterning the passivation layer such that the passivation layer is selectively removed from the second partial region of the graphene layer; and 2 Application No. 14/282,026 adsorbing a DNA molecule on the graphene layer and the patterned passivation layer to obtain the predetermined doping property in the second partial region and to obtain the doping property different from the predetermined doping property in the first partial region.
: The method for forming the PN junction in graphene according to claim 1, further comprising: before adsorbing the DNA molecule layer on the graphene layer, forming a source electrode and a drain electrode in contact with the graphene layer at both sides of the graphene layer, the source electrode and the drain electrode being spaced apart from each other.
: The method for forming the PN junction in graphene according to claim 1, wherein the first partial region is disposed between the second partial region and a third partial region with the predetermined doping property.
: The method for forming the PN junction in graphene according to claim 1, wherein the second partial region is disposed between the first partial region and a third partial region with a doping property different from the predetermined doping property.
: The method for forming the PN junction in graphene according to claim 1, wherein the second partial region where the DNA molecule layer is located among the graphene layer has an n-type semiconductor property.
: The method for forming the PN junction in graphene according to claim 1, wherein the first partial region, on which the DNA molecule layer is not adsorbed, has a doping property opposite to the predetermined doping property.
. canceled
: A PN junction structure comprising: SVG 14282026.04-25-2017.J₁XQPW₃GRXEAPX4.CLM.1.svg 0.16 1.42 Black and white a DNA molecule layer located on a partial region of the graphene layer and having a predetermined nucleotide sequence structure, wherein the partial region of the graphene layer has a semiconductor property determined by the nucleotide sequence structure of the DNA molecule layer. withdrawn
: The PN junction structure according to claim 7, wherein the graphene layer comprises at least one first region where the DNA molecule layer is not formed and at least one second region where the DNA molecule layer is formed. withdrawn
: The PN junction structure according to claim 7, wherein the partial region where the DNA molecule layer is located among the graphene layer has an n-type semiconductor property. withdrawn
: The PN junction structure according to claim 7, further comprising: a passivation layer located on the partial region of the graphene layer and interposed between the graphene layer and the DNA molecule layer. withdrawn
: The PN junction structure according to claim 7, further comprising: 3 Application No. 14/282,026 a source electrode disposed in contact with the graphene layer at one side of the graphene layer; and a drain electrode disposed in contact with the graphene layer at other side of the graphene layer, the drain electrode being spaced apart from the source electrode. withdrawn
: A method for forming a PN junction in graphene, the method comprising: forming a graphene layer having a first partial region and a second partial region; and adsorbing a DNA molecule layer on the second partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the second partial region with a predetermined Fermi level (E F) upon adsorption, wherein the first partial region, on which the DNA molecule layer is not adsorbed, has a Fermi level (E F) different from that of the second partial region, thereby forming a PN junction between the first partial region and the second partial region.
: The method for forming the PN junction in graphene according to claim 15, wherein the first partial region is disposed between the second partial region and a third partial region with a Fermi level (E F) the same as that of the second partial region.
: The method for forming the PN junction in graphene according to claim 15, wherein the second partial region is disposed between the first partial region and a third partial region with a Fermi level (E F) different from that of the second partial region.
: The method for forming the PN junction in graphene according to claim 15, wherein the second partial region has an n-type semiconductor property where the DNA molecule layer is adsorbed thereon.
Layer stacks claimed or described, ordered top of device to substrate.
graphene PN junction/transistor
Materials described outside the worked examples.
graphene
C
DNA molecule layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dirac point (minimum Ids gate voltage) shift with DNA G/C ratio | — | C |
Table 1
11 through 14 represent a measurement result of graphene on which DNA #1 though DNA #4 shown in the following Table 1 are adsorbed, respectively.
p. 5
passivation layer
photoresist
DNA #1 (SEQ ID NO: 1)
DNA #2 (SEQ ID NO: 2)
DNA #3 (SEQ ID NO: 3)
DNA #4 (SEQ ID NO: 4)
passivation layer
photoresist
DNA #1 (SEQ ID NO: 1)
DNA #2 (SEQ ID NO: 2)
DNA #3 (SEQ ID NO: 3)
DNA #4 (SEQ ID NO: 4)
passivation layer
photoresist
DNA #1 (SEQ ID NO: 1)
DNA #2 (SEQ ID NO: 2)
DNA #3 (SEQ ID NO: 3)
DNA #4 (SEQ ID NO: 4)
passivation layer
photoresist
DNA #1 (SEQ ID NO: 1)
DNA #2 (SEQ ID NO: 2)
DNA #3 (SEQ ID NO: 3)
DNA #4 (SEQ ID NO: 4)