Patent
US 10,584,034METHOD FOR DNA DEFINED ETCHING OF A GRAPHENE NANOSTRUCTURE
Michael James Darling
US
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Patent
Atlas literature
Patent
US 10,584,034Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of one embodiment of the method for etching a graphene nanostructure. [0017]
FIG. 2 is an illustration of one embodiment of the method for etching a graphene nanostructure and shows electrical leads positioned above the first window and …
FIG. 3 is an illustration of one embodiment of the method for etching a graphene nanostructure and shows a detailed view of the reaction area of the third …
FIG. 4 is a schematic of a graphene surface with a DNA sample of one embodiment of the method for etching a graphene nanostructure and shows a double layer …
FIG. 5 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the distance of a water film with respect to relative humidity …
FIG. 6 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the thickness of a water film with respect to a voltage …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: providing a piece of highly oriented pyrolytic graphite including,,, first and second electrode contacts configured to receive an electrical voltage, and a reaction area configured to receive a DNA sample; depositing said DNA sample on the reaction area of said piece of highly oriented pyrolytic graphite, wherein said DNA sample comprises double-stranded DNA or single-stranded DNA; applying a relative humidity to said piece of highly oriented pyrolytic graphite; [[and]] applying said electrical voltage across said first and second electrode contacts, thereby etching a surface of said highly oriented pyrolytic graphite; and rinsing said etched highl y oriented p y rol y tic graphite in deionized water. Currently amended
The method of Claim 1, wherein said piece of highly oriented pyrolytic graphite is coated with a resist. Currently amended
The method of Claim 1, further comprising: analyzing,, the reaction area with an atomic force microscope. Currently amended
The method of Claim 1, further comprising: heating and melting said DNA sample; and cooling said DNA sample to a room temperature, thereby forming a heated and cooled DNA sample, prior to depositing said DNA sample on said reaction area of said highly oriented pyrolytic graphite. Currently amended
The method of Claim 1, wherein said DNA sample is a double-stranded unmethylated lambda DNA. Currently amended
Canceled
The method of Claim [[3]] 1, wherein said first and second electrode contacts are positioned approximately 600 to 1000 micrometres apart. Currently amended
A method, comprising: providing a piece of highl y oriented p y rol y tic graphite including first and second electrode contacts configured to receive an electrical voltage, and a reaction area configured to receive a DNA sample; depositing said DNA sample on the reaction area of said piece of highly oriented p y rol y tic graphite, wherein said DNA sample comprises double-stranded DNA or single-stranded DNA; applying a relative humidity to said piece of highly oriented pyrolytic graphite; and applying said electrical voltage across said first and second electrode contacts, thereby etching a surface of said highly oriented pyrolytic graphite, wherein said electrical voltage is a voltage gradient of approximately 2 to 6 V/mm. Currently amended
The method of Claim 9, further comprising: rinsing said etched highly oriented pyrolytic graphite in deionized water. New
The method of Claim 9, wherein said first and second electrode contacts are positioned approximately 600 to 1000 micrometres apart. New
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
HOPG etching platform
Materials described outside the worked examples.
highly oriented pyrolytic graphite
DNA sample
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is an illustration of one embodiment of the method for etching a graphene nanostructure and shows electrical leads positioned above the first window and …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 5–15 V | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,584,034Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of one embodiment of the method for etching a graphene nanostructure. [0017]
FIG. 2 is an illustration of one embodiment of the method for etching a graphene nanostructure and shows electrical leads positioned above the first window and …
FIG. 3 is an illustration of one embodiment of the method for etching a graphene nanostructure and shows a detailed view of the reaction area of the third …
FIG. 4 is a schematic of a graphene surface with a DNA sample of one embodiment of the method for etching a graphene nanostructure and shows a double layer …
FIG. 5 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the distance of a water film with respect to relative humidity …
FIG. 6 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the thickness of a water film with respect to a voltage …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: providing a piece of highly oriented pyrolytic graphite including,,, first and second electrode contacts configured to receive an electrical voltage, and a reaction area configured to receive a DNA sample; depositing said DNA sample on the reaction area of said piece of highly oriented pyrolytic graphite, wherein said DNA sample comprises double-stranded DNA or single-stranded DNA; applying a relative humidity to said piece of highly oriented pyrolytic graphite; [[and]] applying said electrical voltage across said first and second electrode contacts, thereby etching a surface of said highly oriented pyrolytic graphite; and rinsing said etched highl y oriented p y rol y tic graphite in deionized water. Currently amended
The method of Claim 1, wherein said piece of highly oriented pyrolytic graphite is coated with a resist. Currently amended
The method of Claim 1, further comprising: analyzing,, the reaction area with an atomic force microscope. Currently amended
The method of Claim 1, further comprising: heating and melting said DNA sample; and cooling said DNA sample to a room temperature, thereby forming a heated and cooled DNA sample, prior to depositing said DNA sample on said reaction area of said highly oriented pyrolytic graphite. Currently amended
The method of Claim 1, wherein said DNA sample is a double-stranded unmethylated lambda DNA. Currently amended
Canceled
The method of Claim [[3]] 1, wherein said first and second electrode contacts are positioned approximately 600 to 1000 micrometres apart. Currently amended
A method, comprising: providing a piece of highl y oriented p y rol y tic graphite including first and second electrode contacts configured to receive an electrical voltage, and a reaction area configured to receive a DNA sample; depositing said DNA sample on the reaction area of said piece of highly oriented p y rol y tic graphite, wherein said DNA sample comprises double-stranded DNA or single-stranded DNA; applying a relative humidity to said piece of highly oriented pyrolytic graphite; and applying said electrical voltage across said first and second electrode contacts, thereby etching a surface of said highly oriented pyrolytic graphite, wherein said electrical voltage is a voltage gradient of approximately 2 to 6 V/mm. Currently amended
The method of Claim 9, further comprising: rinsing said etched highly oriented pyrolytic graphite in deionized water. New
The method of Claim 9, wherein said first and second electrode contacts are positioned approximately 600 to 1000 micrometres apart. New
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
HOPG etching platform
Materials described outside the worked examples.
highly oriented pyrolytic graphite
DNA sample
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is an illustration of one embodiment of the method for etching a graphene nanostructure and shows electrical leads positioned above the first window and …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 5–15 V | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,584,034Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of one embodiment of the method for etching a graphene nanostructure. [0017]
FIG. 2 is an illustration of one embodiment of the method for etching a graphene nanostructure and shows electrical leads positioned above the first window and …
FIG. 3 is an illustration of one embodiment of the method for etching a graphene nanostructure and shows a detailed view of the reaction area of the third …
FIG. 4 is a schematic of a graphene surface with a DNA sample of one embodiment of the method for etching a graphene nanostructure and shows a double layer …
FIG. 5 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the distance of a water film with respect to relative humidity …
FIG. 6 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the thickness of a water film with respect to a voltage …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: providing a piece of highly oriented pyrolytic graphite including,,, first and second electrode contacts configured to receive an electrical voltage, and a reaction area configured to receive a DNA sample; depositing said DNA sample on the reaction area of said piece of highly oriented pyrolytic graphite, wherein said DNA sample comprises double-stranded DNA or single-stranded DNA; applying a relative humidity to said piece of highly oriented pyrolytic graphite; [[and]] applying said electrical voltage across said first and second electrode contacts, thereby etching a surface of said highly oriented pyrolytic graphite; and rinsing said etched highl y oriented p y rol y tic graphite in deionized water. Currently amended
The method of Claim 1, wherein said piece of highly oriented pyrolytic graphite is coated with a resist. Currently amended
The method of Claim 1, further comprising: analyzing,, the reaction area with an atomic force microscope. Currently amended
The method of Claim 1, further comprising: heating and melting said DNA sample; and cooling said DNA sample to a room temperature, thereby forming a heated and cooled DNA sample, prior to depositing said DNA sample on said reaction area of said highly oriented pyrolytic graphite. Currently amended
The method of Claim 1, wherein said DNA sample is a double-stranded unmethylated lambda DNA. Currently amended
Canceled
The method of Claim [[3]] 1, wherein said first and second electrode contacts are positioned approximately 600 to 1000 micrometres apart. Currently amended
A method, comprising: providing a piece of highl y oriented p y rol y tic graphite including first and second electrode contacts configured to receive an electrical voltage, and a reaction area configured to receive a DNA sample; depositing said DNA sample on the reaction area of said piece of highly oriented p y rol y tic graphite, wherein said DNA sample comprises double-stranded DNA or single-stranded DNA; applying a relative humidity to said piece of highly oriented pyrolytic graphite; and applying said electrical voltage across said first and second electrode contacts, thereby etching a surface of said highly oriented pyrolytic graphite, wherein said electrical voltage is a voltage gradient of approximately 2 to 6 V/mm. Currently amended
The method of Claim 9, further comprising: rinsing said etched highly oriented pyrolytic graphite in deionized water. New
The method of Claim 9, wherein said first and second electrode contacts are positioned approximately 600 to 1000 micrometres apart. New
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
HOPG etching platform
Materials described outside the worked examples.
highly oriented pyrolytic graphite
DNA sample
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is an illustration of one embodiment of the method for etching a graphene nanostructure and shows electrical leads positioned above the first window and …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 5–15 V | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,584,034Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of one embodiment of the method for etching a graphene nanostructure. [0017]
FIG. 2 is an illustration of one embodiment of the method for etching a graphene nanostructure and shows electrical leads positioned above the first window and …
FIG. 3 is an illustration of one embodiment of the method for etching a graphene nanostructure and shows a detailed view of the reaction area of the third …
FIG. 4 is a schematic of a graphene surface with a DNA sample of one embodiment of the method for etching a graphene nanostructure and shows a double layer …
FIG. 5 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the distance of a water film with respect to relative humidity …
FIG. 6 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the thickness of a water film with respect to a voltage …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: providing a piece of highly oriented pyrolytic graphite including,,, first and second electrode contacts configured to receive an electrical voltage, and a reaction area configured to receive a DNA sample; depositing said DNA sample on the reaction area of said piece of highly oriented pyrolytic graphite, wherein said DNA sample comprises double-stranded DNA or single-stranded DNA; applying a relative humidity to said piece of highly oriented pyrolytic graphite; [[and]] applying said electrical voltage across said first and second electrode contacts, thereby etching a surface of said highly oriented pyrolytic graphite; and rinsing said etched highl y oriented p y rol y tic graphite in deionized water. Currently amended
The method of Claim 1, wherein said piece of highly oriented pyrolytic graphite is coated with a resist. Currently amended
The method of Claim 1, further comprising: analyzing,, the reaction area with an atomic force microscope. Currently amended
The method of Claim 1, further comprising: heating and melting said DNA sample; and cooling said DNA sample to a room temperature, thereby forming a heated and cooled DNA sample, prior to depositing said DNA sample on said reaction area of said highly oriented pyrolytic graphite. Currently amended
The method of Claim 1, wherein said DNA sample is a double-stranded unmethylated lambda DNA. Currently amended
Canceled
The method of Claim [[3]] 1, wherein said first and second electrode contacts are positioned approximately 600 to 1000 micrometres apart. Currently amended
A method, comprising: providing a piece of highl y oriented p y rol y tic graphite including first and second electrode contacts configured to receive an electrical voltage, and a reaction area configured to receive a DNA sample; depositing said DNA sample on the reaction area of said piece of highly oriented p y rol y tic graphite, wherein said DNA sample comprises double-stranded DNA or single-stranded DNA; applying a relative humidity to said piece of highly oriented pyrolytic graphite; and applying said electrical voltage across said first and second electrode contacts, thereby etching a surface of said highly oriented pyrolytic graphite, wherein said electrical voltage is a voltage gradient of approximately 2 to 6 V/mm. Currently amended
The method of Claim 9, further comprising: rinsing said etched highly oriented pyrolytic graphite in deionized water. New
The method of Claim 9, wherein said first and second electrode contacts are positioned approximately 600 to 1000 micrometres apart. New
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
HOPG etching platform
Materials described outside the worked examples.
highly oriented pyrolytic graphite
DNA sample
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is an illustration of one embodiment of the method for etching a graphene nanostructure and shows electrical leads positioned above the first window and …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 5–15 V | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
resist
buffer solution
potassium chloride
KCl
tris(hydroxymethyl)aminomethane hydrochloride
ethylenediaminetetraacetic acid
EDTA
double-stranded unmethylated lambda DNA
polymethylmethacrylate resist
deionized water
FIG. 5 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the distance of a water film with respect to relative humidity …
FIG. 6 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the thickness of a water film with respect to a voltage …
FIG. 6 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the thickness of a water film with respect to a voltage …
| 2–6 V |
| — |
Voltage | 5–25 V | — |
Thickness | 8–12 nm | — |
resist
buffer solution
potassium chloride
KCl
tris(hydroxymethyl)aminomethane hydrochloride
ethylenediaminetetraacetic acid
EDTA
double-stranded unmethylated lambda DNA
polymethylmethacrylate resist
deionized water
FIG. 5 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the distance of a water film with respect to relative humidity …
FIG. 6 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the thickness of a water film with respect to a voltage …
FIG. 6 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the thickness of a water film with respect to a voltage …
| 2–6 V |
| — |
Voltage | 5–25 V | — |
Thickness | 8–12 nm | — |
resist
buffer solution
potassium chloride
KCl
tris(hydroxymethyl)aminomethane hydrochloride
ethylenediaminetetraacetic acid
EDTA
double-stranded unmethylated lambda DNA
polymethylmethacrylate resist
deionized water
FIG. 5 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the distance of a water film with respect to relative humidity …
FIG. 6 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the thickness of a water film with respect to a voltage …
FIG. 6 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the thickness of a water film with respect to a voltage …
| 2–6 V |
| — |
Voltage | 5–25 V | — |
Thickness | 8–12 nm | — |
resist
buffer solution
potassium chloride
KCl
tris(hydroxymethyl)aminomethane hydrochloride
ethylenediaminetetraacetic acid
EDTA
double-stranded unmethylated lambda DNA
polymethylmethacrylate resist
deionized water
FIG. 5 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the distance of a water film with respect to relative humidity …
FIG. 6 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the thickness of a water film with respect to a voltage …
FIG. 6 is a graph of one embodiment of the method for etching a graphene nanostructure and shows the thickness of a water film with respect to a voltage …
| 2–6 V |
| — |
Voltage | 5–25 V | — |
Thickness | 8–12 nm | — |