Method and apparatus for synthesis of graphene

Angelo Gaitas

Patent

Atlas literature

Patent

US 10,285,218

Method and apparatus for synthesis of graphene

Angelo Gaitas

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

4 independent · 15 dependent

1
IndependentCCcatalyst metal layergraphene synthesis substrate stack
1. A method of synthesis of graphene, the method comprising: preparing a substrate comprising a carbon (C) layer and a catalyst metal layer in a chamber; disposing a thermal probe tip on the catalyst metal layer; heating the thermal probe tip such that graphene is formed on the substrate; and removing the catalyst metal layer from the substrate.
1. 2
  Dependent← claim 1Sn
  The method according to claim 1, wherein the catalyst metal layer is a tin (S n) layer.
2. 11
  Dependent← claim 1Sn
  11. The method according to claim 1, the disposing of the thermal probe tip comprising disposing the thermal probe tip in direct physical contact with the Sn layer.
3. 12
  Dependent← claim 1
  The method according to claim 1, a pressure of the chamber being maintained under 1 Torr during the disposing of the thermal probe tip on the catalyst metal layer, the heating of the thermal probe tip, and the removing of the catalyst metal layer from the substrate.
3
IndependentCCcatalyst metal layerSiSiO₂graphene synthesis substrate stack
The method according to claim I, the substrate comprising a silicon (Si) layer and an oxide layer on the Si layer, and the Si layer, the oxide layer, the C layer, and the catalyst metal layer being stacked in series.
1. 4
  Dependent← claim 3
  The method according to claim 3, further comprising ﬂowing precursor gases. i. The method according to claim 3, the thermal probe tip having a diameter of submi c ron length.
2. 6
  Dependent← claim 3
  The method according to claim 3, the heating of the thermal probe tip comprising heating by at least one of a laser, microwave radiation, inductive heating, and resistive heating.
3. 7
  Dependent← claim 3
  The method according to claim 3, further comprising moving the thermal probe tip with respect to the substrate or moving the substrate with respect to the thermal probe tip.
4. 8
  Dependent← claim 3catalyst metal layer
  The method according to claim 3, further comprising forming an electrode on the graphene.
5. 9
  Dependent← claim 3CSn
  The method according to claim 3, the C layer and the S n layer being formed on the oxide layer by electron beam evaporation.
6. 10
  Dependent← claim 3SnHNO₃
  The method according to claim 3, the removing of the Sn layer comprising using 10% IINO 3 solution.
13
Independentapparatus for synthesis of graphene
An apparatus for synthesis of graphene, the apparatus comprising: a chamber; a thermal probe disposed in the chamber; a thermal interface circuit heating the thermal probe; and a scan controller controlling a movement of the thermal probe.
1. 14
  Dependent← claim 13apparatus for synthesis of graphene
  The apparatus according to claim 13, the thermal probe comprising a plurality of thermal probe tips, the plurality of thermal probe tips being arranged in a two dimensional array, and each thermal probe tip of the plurality of thermal probe tips comprising a cantilever and a nanoscale tip disposed on the cantilever.
2. 16
  Dependent← claim 13apparatus for synthesis of graphene
  The apparatus according to claim 13, the thermal probe comprising a solid frame and a plurality of tips disposed on the solid frame and arranged in a two dimensional array.
3. 17
  Dependent← claim 13apparatus for synthesis of graphene
  The apparatus according to claim 13, further comprising a monitoring device to monitor the movement of the rm al probe.
4. 19
  Dependent← claim 13apparatus for synthesis of graphene
  The apparatus according to claim 13, the chamber comprising an inlet and an outlet.
20
IndependentCCcatalyst metal layerSnSiSiO₂graphene synthesis substrate stack
A method of synthesis of graphene, the method comprising: depositing a carbon (C) layer on a substrate comprising a silicon (Si) layer and an SiO 2 layer on the Si layer; depositing a tin (Sn) layer on the C layer; preparing the substrate including the Si layer, the SiO 2 layer, the C layer, and the S n layer in a chamber; maintaining a pressure of the chamber under 1 Torr; ﬂo w ing argon gas in the chamber; contacting a thermal probe tip on the Sn layer; heating the thermal probe tip to a temperature of greater than 250 ° C such that graphene is formed on the substrate; and etching the substrate with HNO 3 solution.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

graphene synthesis substrate stack

Csynthesis product

Sncatalyst layer

Ccarbon precursor layer

SiO₂oxide layer

Sibase substrate

apparatus for synthesis of graphene

No layer stack recorded.

Materials

Materials described outside the worked examples.

graphene

Synthesis Product

Precursor Carbon Source Layer

catalyst metal layer

Process steps

Additional fabrication and treatment steps described in the patent.

Thermal Probe Graphene Synthesis

Step 1

Temperature

250°C

Ambient

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Pressure	≤ 1 Torr	—
Temperature

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