Patent
US 10,184,184METHOD AND APPARATUS FOR FORMING A GRAPHENE LAYER
Vincent BOUCHIAT
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,184,184Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Origina l) An apparatus for fo rm ing a graphene l ayer comprising: a reaction chamber containing a support l ayer; at least one heating element for heating the support layer; and a control device configured to control the formation of said graphene layer on a surface of said support layer by: a) during a first time period, introducing into said reaction chamber an organic compound gas to provide graphene growth by causing a formation of carbon atoms on said surface; b) during a second ti m e period directly after said first ti m e period, reducing a rate of introduction of said organic compound gas into said reaction chamber and introducing into said reaction chamber a further gas, wherein said further gas is a carbon etching gas; and repeating a) and b) one or more times.
The apparatus of claim 1, wherein the control device is f u rther configured to control each of said second time periods to have a duration at least one tenth of the duration of each of said first time periods.
The apparatus of claim 1, wherein the control device is further configured to control each of said second time periods to have a duration at least equal to the duration of each of said first time periods.
The apparatus of claim 1, wherein the control device is further configured to control the duration of each of said first time periods to be at least one second. -2-
The appara tu s of claim 1, wherein the c o ntr o l device is f urt her configured to control the duration of each of said second time periods to be at least 1 second.
The apparatus of claim 1, wherein the c o ntr o l device is further configured co ntr o l the dose of organic c ompo und gas introduced into said reaction chamber during each of said first time periods to be equal to between 0.1 and 1 00 Pa.s.
The appara tu s of claim 1, wherein the c o ntr o l device is f irt her configured to control the introd u ction of said organic co mpou nd gas into said reaction chamber to be at a rate of at least t sc cm during said first ti m e periods and to be at a rate of at m o st 0.1 sccm during said second time periods.
The apparatus of claim 1, wherein the c o ntr o l device is f u rther c o nfig u red no t to introduce said organic compound gas into said reaction chamber during said second time periods.
The apparatus of claim 1, wherein the c o ntr o l device is further configured to repeat a) and b) throughout a growth period of said graphene layer of at least 1 0 seconds.
The apparatus of claim 1, wherein said organic c ompo und gas is at least one of: methane, butane, ethylene and acetylene.
16. The appara tu s of claim 1, wherein said graphene layer has between 1 and 10 layers of carbon at oms.
The apparatus of claim 1, wherein said graphene layer has a single layer of carbon atoms. -3-
The apparatus claim 1, wherein the c ontro l device is f u rther configured to control the rate of introduction of said organic co mpou nd gas into said reaction chamber to be at a first rate during one o r m o re of said first ti m e periods, and to be at a second rate lower than said first rate during one o r m o re of said first time periods. -4-
The apparatus of clai m 1, wherein the control device is f u rther configured to introduce said further gas into said reaction chamber during each of said first time periods.
The apparatus of claim 2, wherein said further gas is at least one of hydrogen and oxygen.
The appara tu s of clai m 1, wherein the control device is f urt her configured to c o ntr o l the d os e of organic c ompo und gas introduced into said reaction c ham ber during each of said second time periods to be less than o r equal to 0.0 1 Pa.s.
10. The apparatus of c l aim 1, wherein said support layer is a c o pper f o il.
The appara tu s of clai m 1, wherein the control device is f urt her configured to additionally introduce an inert gas into said reaction c ham ber during said first and second ti me periods.
Layer stacks claimed or described, ordered top of device to substrate.
graphene CVD growth apparatus
Materials described outside the worked examples.
graphene layer
C
organic compound gas
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | ≥ 1 second | — |
Patent
Atlas literature
Patent
US 10,184,184Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Origina l) An apparatus for fo rm ing a graphene l ayer comprising: a reaction chamber containing a support l ayer; at least one heating element for heating the support layer; and a control device configured to control the formation of said graphene layer on a surface of said support layer by: a) during a first time period, introducing into said reaction chamber an organic compound gas to provide graphene growth by causing a formation of carbon atoms on said surface; b) during a second ti m e period directly after said first ti m e period, reducing a rate of introduction of said organic compound gas into said reaction chamber and introducing into said reaction chamber a further gas, wherein said further gas is a carbon etching gas; and repeating a) and b) one or more times.
The apparatus of claim 1, wherein the control device is f u rther configured to control each of said second time periods to have a duration at least one tenth of the duration of each of said first time periods.
The apparatus of claim 1, wherein the control device is further configured to control each of said second time periods to have a duration at least equal to the duration of each of said first time periods.
The apparatus of claim 1, wherein the control device is further configured to control the duration of each of said first time periods to be at least one second. -2-
The appara tu s of claim 1, wherein the c o ntr o l device is f urt her configured to control the duration of each of said second time periods to be at least 1 second.
The apparatus of claim 1, wherein the c o ntr o l device is further configured co ntr o l the dose of organic c ompo und gas introduced into said reaction chamber during each of said first time periods to be equal to between 0.1 and 1 00 Pa.s.
The appara tu s of claim 1, wherein the c o ntr o l device is f irt her configured to control the introd u ction of said organic co mpou nd gas into said reaction chamber to be at a rate of at least t sc cm during said first ti m e periods and to be at a rate of at m o st 0.1 sccm during said second time periods.
The apparatus of claim 1, wherein the c o ntr o l device is f u rther c o nfig u red no t to introduce said organic compound gas into said reaction chamber during said second time periods.
The apparatus of claim 1, wherein the c o ntr o l device is further configured to repeat a) and b) throughout a growth period of said graphene layer of at least 1 0 seconds.
The apparatus of claim 1, wherein said organic c ompo und gas is at least one of: methane, butane, ethylene and acetylene.
16. The appara tu s of claim 1, wherein said graphene layer has between 1 and 10 layers of carbon at oms.
The apparatus of claim 1, wherein said graphene layer has a single layer of carbon atoms. -3-
The apparatus claim 1, wherein the c ontro l device is f u rther configured to control the rate of introduction of said organic co mpou nd gas into said reaction chamber to be at a first rate during one o r m o re of said first ti m e periods, and to be at a second rate lower than said first rate during one o r m o re of said first time periods. -4-
The apparatus of clai m 1, wherein the control device is f u rther configured to introduce said further gas into said reaction chamber during each of said first time periods.
The apparatus of claim 2, wherein said further gas is at least one of hydrogen and oxygen.
The appara tu s of clai m 1, wherein the control device is f urt her configured to c o ntr o l the d os e of organic c ompo und gas introduced into said reaction c ham ber during each of said second time periods to be less than o r equal to 0.0 1 Pa.s.
10. The apparatus of c l aim 1, wherein said support layer is a c o pper f o il.
The appara tu s of clai m 1, wherein the control device is f urt her configured to additionally introduce an inert gas into said reaction c ham ber during said first and second ti me periods.
Layer stacks claimed or described, ordered top of device to substrate.
graphene CVD growth apparatus
Materials described outside the worked examples.
graphene layer
C
organic compound gas
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | ≥ 1 second | — |
Patent
Atlas literature
Patent
US 10,184,184Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Origina l) An apparatus for fo rm ing a graphene l ayer comprising: a reaction chamber containing a support l ayer; at least one heating element for heating the support layer; and a control device configured to control the formation of said graphene layer on a surface of said support layer by: a) during a first time period, introducing into said reaction chamber an organic compound gas to provide graphene growth by causing a formation of carbon atoms on said surface; b) during a second ti m e period directly after said first ti m e period, reducing a rate of introduction of said organic compound gas into said reaction chamber and introducing into said reaction chamber a further gas, wherein said further gas is a carbon etching gas; and repeating a) and b) one or more times.
The apparatus of claim 1, wherein the control device is f u rther configured to control each of said second time periods to have a duration at least one tenth of the duration of each of said first time periods.
The apparatus of claim 1, wherein the control device is further configured to control each of said second time periods to have a duration at least equal to the duration of each of said first time periods.
The apparatus of claim 1, wherein the control device is further configured to control the duration of each of said first time periods to be at least one second. -2-
The appara tu s of claim 1, wherein the c o ntr o l device is f urt her configured to control the duration of each of said second time periods to be at least 1 second.
The apparatus of claim 1, wherein the c o ntr o l device is further configured co ntr o l the dose of organic c ompo und gas introduced into said reaction chamber during each of said first time periods to be equal to between 0.1 and 1 00 Pa.s.
The appara tu s of claim 1, wherein the c o ntr o l device is f irt her configured to control the introd u ction of said organic co mpou nd gas into said reaction chamber to be at a rate of at least t sc cm during said first ti m e periods and to be at a rate of at m o st 0.1 sccm during said second time periods.
The apparatus of claim 1, wherein the c o ntr o l device is f u rther c o nfig u red no t to introduce said organic compound gas into said reaction chamber during said second time periods.
The apparatus of claim 1, wherein the c o ntr o l device is further configured to repeat a) and b) throughout a growth period of said graphene layer of at least 1 0 seconds.
The apparatus of claim 1, wherein said organic c ompo und gas is at least one of: methane, butane, ethylene and acetylene.
16. The appara tu s of claim 1, wherein said graphene layer has between 1 and 10 layers of carbon at oms.
The apparatus of claim 1, wherein said graphene layer has a single layer of carbon atoms. -3-
The apparatus claim 1, wherein the c ontro l device is f u rther configured to control the rate of introduction of said organic co mpou nd gas into said reaction chamber to be at a first rate during one o r m o re of said first ti m e periods, and to be at a second rate lower than said first rate during one o r m o re of said first time periods. -4-
The apparatus of clai m 1, wherein the control device is f u rther configured to introduce said further gas into said reaction chamber during each of said first time periods.
The apparatus of claim 2, wherein said further gas is at least one of hydrogen and oxygen.
The appara tu s of clai m 1, wherein the control device is f urt her configured to c o ntr o l the d os e of organic c ompo und gas introduced into said reaction c ham ber during each of said second time periods to be less than o r equal to 0.0 1 Pa.s.
10. The apparatus of c l aim 1, wherein said support layer is a c o pper f o il.
The appara tu s of clai m 1, wherein the control device is f urt her configured to additionally introduce an inert gas into said reaction c ham ber during said first and second ti me periods.
Layer stacks claimed or described, ordered top of device to substrate.
graphene CVD growth apparatus
Materials described outside the worked examples.
graphene layer
C
organic compound gas
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | ≥ 1 second | — |
Patent
Atlas literature
Patent
US 10,184,184Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Origina l) An apparatus for fo rm ing a graphene l ayer comprising: a reaction chamber containing a support l ayer; at least one heating element for heating the support layer; and a control device configured to control the formation of said graphene layer on a surface of said support layer by: a) during a first time period, introducing into said reaction chamber an organic compound gas to provide graphene growth by causing a formation of carbon atoms on said surface; b) during a second ti m e period directly after said first ti m e period, reducing a rate of introduction of said organic compound gas into said reaction chamber and introducing into said reaction chamber a further gas, wherein said further gas is a carbon etching gas; and repeating a) and b) one or more times.
The apparatus of claim 1, wherein the control device is f u rther configured to control each of said second time periods to have a duration at least one tenth of the duration of each of said first time periods.
The apparatus of claim 1, wherein the control device is further configured to control each of said second time periods to have a duration at least equal to the duration of each of said first time periods.
The apparatus of claim 1, wherein the control device is further configured to control the duration of each of said first time periods to be at least one second. -2-
The appara tu s of claim 1, wherein the c o ntr o l device is f urt her configured to control the duration of each of said second time periods to be at least 1 second.
The apparatus of claim 1, wherein the c o ntr o l device is further configured co ntr o l the dose of organic c ompo und gas introduced into said reaction chamber during each of said first time periods to be equal to between 0.1 and 1 00 Pa.s.
The appara tu s of claim 1, wherein the c o ntr o l device is f irt her configured to control the introd u ction of said organic co mpou nd gas into said reaction chamber to be at a rate of at least t sc cm during said first ti m e periods and to be at a rate of at m o st 0.1 sccm during said second time periods.
The apparatus of claim 1, wherein the c o ntr o l device is f u rther c o nfig u red no t to introduce said organic compound gas into said reaction chamber during said second time periods.
The apparatus of claim 1, wherein the c o ntr o l device is further configured to repeat a) and b) throughout a growth period of said graphene layer of at least 1 0 seconds.
The apparatus of claim 1, wherein said organic c ompo und gas is at least one of: methane, butane, ethylene and acetylene.
16. The appara tu s of claim 1, wherein said graphene layer has between 1 and 10 layers of carbon at oms.
The apparatus of claim 1, wherein said graphene layer has a single layer of carbon atoms. -3-
The apparatus claim 1, wherein the c ontro l device is f u rther configured to control the rate of introduction of said organic co mpou nd gas into said reaction chamber to be at a first rate during one o r m o re of said first ti m e periods, and to be at a second rate lower than said first rate during one o r m o re of said first time periods. -4-
The apparatus of clai m 1, wherein the control device is f u rther configured to introduce said further gas into said reaction chamber during each of said first time periods.
The apparatus of claim 2, wherein said further gas is at least one of hydrogen and oxygen.
The appara tu s of clai m 1, wherein the control device is f urt her configured to c o ntr o l the d os e of organic c ompo und gas introduced into said reaction c ham ber during each of said second time periods to be less than o r equal to 0.0 1 Pa.s.
10. The apparatus of c l aim 1, wherein said support layer is a c o pper f o il.
The appara tu s of clai m 1, wherein the control device is f urt her configured to additionally introduce an inert gas into said reaction c ham ber during said first and second ti me periods.
Layer stacks claimed or described, ordered top of device to substrate.
graphene CVD growth apparatus
Materials described outside the worked examples.
graphene layer
C
organic compound gas
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | ≥ 1 second | — |
carbon etching gas
hydrogen
H₂
oxygen
O₂
copper foil
Cu
inert gas
methane
CH₄
butane
C₄H₁₀
ethylene
C₂H₄
acetylene
C₂H₂
carbon etching gas
hydrogen
H₂
oxygen
O₂
copper foil
Cu
inert gas
methane
CH₄
butane
C₄H₁₀
ethylene
C₂H₄
acetylene
C₂H₂
carbon etching gas
hydrogen
H₂
oxygen
O₂
copper foil
Cu
inert gas
methane
CH₄
butane
C₄H₁₀
ethylene
C₂H₄
acetylene
C₂H₂
carbon etching gas
hydrogen
H₂
oxygen
O₂
copper foil
Cu
inert gas
methane
CH₄
butane
C₄H₁₀
ethylene
C₂H₄
acetylene
C₂H₂