Patent
US 10,079,392METAL-DOPED GRAPHENE AND GROWTH METHOD OF THE SAME
Kun-Ping Huang
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,079,392Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing metal-doped graphene, comp ri sing the steps of: providing a carbon precursor, a metal precursor, and a group VI precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and performing a microw av e plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises- re e urs e o r aluminum chloride, ferric chloride or palladium dichloride. Currently amended
The method of growing metal-doped graphen e as claimed in claim 1, wherein the carbon precursor comprises hydrocarbon gas. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein the carbon precursor is provided at a flow rate of I sc cm- 1 00 se em. Original
The method of growing metal-doped graphene ai s claimed in claim 1, wherein the group VI precursor comprises sul fu r, oxygen or selenium. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein an amount of the metal precursor and the group VI precursor is independently between 10 mg and 1000 mg. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein a flame temperature is less than 500 0 C during the microwave plasma torch (MPT) chemical vapor deposition process. Previously presented
The method of growing metal-doped graphene as claimed in claim 1, wherein a microwave power ranges from 100W to 2000W during the micro plasma torch (MPT) chemical vapor deposition process. Previously presented
The method of growing metal- d oped graphene as claimed in claim 1, wherein a deposition ti m e ranges from 0.5 m in to 1 0 min during the micro plasma torch (M PT) chemical vapor deposition process. Previously presented
The method of growing metal -doped graphene as claimed in claim 1, wherein a working pressure ranges from 0.001 torr to 300 t orr during the micro plasma torch (MPT) chemical vapor deposition process. Previously presented
1 3. The method of growing metal-doped graphe n e as claimed in claim 1, wherein the step of forming the metal-doped graphene comprises growing graphene and doping metal at the s am e time. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein the step of forming the metal-doped graphene further comprises providing inert gas. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein the step of forming the metal-doped graphene further comprises doping nitrogen. Original
4-5 Canceled
Canceled
Canceled
16-21 Canceled
Canceled
A method of growing metal-doped graphene, co m prising the steps of: providing a carbon precursor, a metal precursor, and a group V I precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and perfo rm ing a microwave plasma torch (MPT) chemical vapor deposition process o n the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a flame temperature is less than 500 0 C during the m icrowave plasma torch (M PT) chemical vapor deposition process. New
A method of growing metal-doped gr aph ene, comprising the steps of: providing a carbon precursor, a metal precursor, and a group VI precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and performing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a microwave power ranges from 100W to 200 0W during the micro plasma torch (MPT) chemical vapor deposition process. New
A method of growing metal-doped graphene, comprising the steps of: providing a carbon precursor, a metal precursor, and a group VI precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and per form ing a microwave plasma torch (MP T) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group V I precursor in o rder to fo nn a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a deposition time ranges from 0.5 m in to 1 0 min during the micro plasma torch (MPT) chemical vapor deposition process. New
A method of growing metal-doped g r aphene, comprising the steps of: providing a carbon precursor, a metal precursor, and a group VI precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and perfo rm ing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group V I precursor in order to for m a metal-doped graphene, wherein the metal precursor comprises al u minum precursor, palladium precursor or iron precursor, and a working pressure ranges from 0.001 torr to 300 torr d u ring the micro plasma torch (MPT) chemical vapor deposition process. New
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials1 process step
Growth of aluminum-doped graphene by MPT CVD process. A titanium substrate was placed in a quartz reactor; 200 mg of aluminum trichloride (metal precursor) and 50 mg of diphenyl disulfide (BDS, group VI precursor) were added; methane (carbon precursor) and nitrogen gas were introduced at a flow rate ratio of 1:4. Working pressure was set below 0.05 torr; microwave power was 800 W; process time was 15 minutes. XPS analysis showed aluminum doping ratio of 8 at%, sulfur doping ratio of 2 at%, and nitrogen doping ratio of 5.4 at%.
Materials described outside the worked examples.
metal-doped graphene
ferric chloride
FeCl₃
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
aluminum doping ratio in aluminum-doped graphene (XPS) | 8 at% | aluminum-doped graphene |
Patent
Atlas literature
Patent
US 10,079,392Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing metal-doped graphene, comp ri sing the steps of: providing a carbon precursor, a metal precursor, and a group VI precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and performing a microw av e plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises- re e urs e o r aluminum chloride, ferric chloride or palladium dichloride. Currently amended
The method of growing metal-doped graphen e as claimed in claim 1, wherein the carbon precursor comprises hydrocarbon gas. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein the carbon precursor is provided at a flow rate of I sc cm- 1 00 se em. Original
The method of growing metal-doped graphene ai s claimed in claim 1, wherein the group VI precursor comprises sul fu r, oxygen or selenium. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein an amount of the metal precursor and the group VI precursor is independently between 10 mg and 1000 mg. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein a flame temperature is less than 500 0 C during the microwave plasma torch (MPT) chemical vapor deposition process. Previously presented
The method of growing metal-doped graphene as claimed in claim 1, wherein a microwave power ranges from 100W to 2000W during the micro plasma torch (MPT) chemical vapor deposition process. Previously presented
The method of growing metal- d oped graphene as claimed in claim 1, wherein a deposition ti m e ranges from 0.5 m in to 1 0 min during the micro plasma torch (M PT) chemical vapor deposition process. Previously presented
The method of growing metal -doped graphene as claimed in claim 1, wherein a working pressure ranges from 0.001 torr to 300 t orr during the micro plasma torch (MPT) chemical vapor deposition process. Previously presented
1 3. The method of growing metal-doped graphe n e as claimed in claim 1, wherein the step of forming the metal-doped graphene comprises growing graphene and doping metal at the s am e time. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein the step of forming the metal-doped graphene further comprises providing inert gas. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein the step of forming the metal-doped graphene further comprises doping nitrogen. Original
4-5 Canceled
Canceled
Canceled
16-21 Canceled
Canceled
A method of growing metal-doped graphene, co m prising the steps of: providing a carbon precursor, a metal precursor, and a group V I precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and perfo rm ing a microwave plasma torch (MPT) chemical vapor deposition process o n the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a flame temperature is less than 500 0 C during the m icrowave plasma torch (M PT) chemical vapor deposition process. New
A method of growing metal-doped gr aph ene, comprising the steps of: providing a carbon precursor, a metal precursor, and a group VI precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and performing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a microwave power ranges from 100W to 200 0W during the micro plasma torch (MPT) chemical vapor deposition process. New
A method of growing metal-doped graphene, comprising the steps of: providing a carbon precursor, a metal precursor, and a group VI precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and per form ing a microwave plasma torch (MP T) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group V I precursor in o rder to fo nn a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a deposition time ranges from 0.5 m in to 1 0 min during the micro plasma torch (MPT) chemical vapor deposition process. New
A method of growing metal-doped g r aphene, comprising the steps of: providing a carbon precursor, a metal precursor, and a group VI precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and perfo rm ing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group V I precursor in order to for m a metal-doped graphene, wherein the metal precursor comprises al u minum precursor, palladium precursor or iron precursor, and a working pressure ranges from 0.001 torr to 300 torr d u ring the micro plasma torch (MPT) chemical vapor deposition process. New
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials1 process step
Growth of aluminum-doped graphene by MPT CVD process. A titanium substrate was placed in a quartz reactor; 200 mg of aluminum trichloride (metal precursor) and 50 mg of diphenyl disulfide (BDS, group VI precursor) were added; methane (carbon precursor) and nitrogen gas were introduced at a flow rate ratio of 1:4. Working pressure was set below 0.05 torr; microwave power was 800 W; process time was 15 minutes. XPS analysis showed aluminum doping ratio of 8 at%, sulfur doping ratio of 2 at%, and nitrogen doping ratio of 5.4 at%.
Materials described outside the worked examples.
metal-doped graphene
ferric chloride
FeCl₃
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
aluminum doping ratio in aluminum-doped graphene (XPS) | 8 at% | aluminum-doped graphene |
Patent
Atlas literature
Patent
US 10,079,392Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing metal-doped graphene, comp ri sing the steps of: providing a carbon precursor, a metal precursor, and a group VI precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and performing a microw av e plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises- re e urs e o r aluminum chloride, ferric chloride or palladium dichloride. Currently amended
The method of growing metal-doped graphen e as claimed in claim 1, wherein the carbon precursor comprises hydrocarbon gas. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein the carbon precursor is provided at a flow rate of I sc cm- 1 00 se em. Original
The method of growing metal-doped graphene ai s claimed in claim 1, wherein the group VI precursor comprises sul fu r, oxygen or selenium. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein an amount of the metal precursor and the group VI precursor is independently between 10 mg and 1000 mg. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein a flame temperature is less than 500 0 C during the microwave plasma torch (MPT) chemical vapor deposition process. Previously presented
The method of growing metal-doped graphene as claimed in claim 1, wherein a microwave power ranges from 100W to 2000W during the micro plasma torch (MPT) chemical vapor deposition process. Previously presented
The method of growing metal- d oped graphene as claimed in claim 1, wherein a deposition ti m e ranges from 0.5 m in to 1 0 min during the micro plasma torch (M PT) chemical vapor deposition process. Previously presented
The method of growing metal -doped graphene as claimed in claim 1, wherein a working pressure ranges from 0.001 torr to 300 t orr during the micro plasma torch (MPT) chemical vapor deposition process. Previously presented
1 3. The method of growing metal-doped graphe n e as claimed in claim 1, wherein the step of forming the metal-doped graphene comprises growing graphene and doping metal at the s am e time. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein the step of forming the metal-doped graphene further comprises providing inert gas. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein the step of forming the metal-doped graphene further comprises doping nitrogen. Original
4-5 Canceled
Canceled
Canceled
16-21 Canceled
Canceled
A method of growing metal-doped graphene, co m prising the steps of: providing a carbon precursor, a metal precursor, and a group V I precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and perfo rm ing a microwave plasma torch (MPT) chemical vapor deposition process o n the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a flame temperature is less than 500 0 C during the m icrowave plasma torch (M PT) chemical vapor deposition process. New
A method of growing metal-doped gr aph ene, comprising the steps of: providing a carbon precursor, a metal precursor, and a group VI precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and performing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a microwave power ranges from 100W to 200 0W during the micro plasma torch (MPT) chemical vapor deposition process. New
A method of growing metal-doped graphene, comprising the steps of: providing a carbon precursor, a metal precursor, and a group VI precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and per form ing a microwave plasma torch (MP T) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group V I precursor in o rder to fo nn a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a deposition time ranges from 0.5 m in to 1 0 min during the micro plasma torch (MPT) chemical vapor deposition process. New
A method of growing metal-doped g r aphene, comprising the steps of: providing a carbon precursor, a metal precursor, and a group VI precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and perfo rm ing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group V I precursor in order to for m a metal-doped graphene, wherein the metal precursor comprises al u minum precursor, palladium precursor or iron precursor, and a working pressure ranges from 0.001 torr to 300 torr d u ring the micro plasma torch (MPT) chemical vapor deposition process. New
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials1 process step
Growth of aluminum-doped graphene by MPT CVD process. A titanium substrate was placed in a quartz reactor; 200 mg of aluminum trichloride (metal precursor) and 50 mg of diphenyl disulfide (BDS, group VI precursor) were added; methane (carbon precursor) and nitrogen gas were introduced at a flow rate ratio of 1:4. Working pressure was set below 0.05 torr; microwave power was 800 W; process time was 15 minutes. XPS analysis showed aluminum doping ratio of 8 at%, sulfur doping ratio of 2 at%, and nitrogen doping ratio of 5.4 at%.
Materials described outside the worked examples.
metal-doped graphene
ferric chloride
FeCl₃
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
aluminum doping ratio in aluminum-doped graphene (XPS) | 8 at% | aluminum-doped graphene |
Patent
Atlas literature
Patent
US 10,079,392Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing metal-doped graphene, comp ri sing the steps of: providing a carbon precursor, a metal precursor, and a group VI precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and performing a microw av e plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises- re e urs e o r aluminum chloride, ferric chloride or palladium dichloride. Currently amended
The method of growing metal-doped graphen e as claimed in claim 1, wherein the carbon precursor comprises hydrocarbon gas. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein the carbon precursor is provided at a flow rate of I sc cm- 1 00 se em. Original
The method of growing metal-doped graphene ai s claimed in claim 1, wherein the group VI precursor comprises sul fu r, oxygen or selenium. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein an amount of the metal precursor and the group VI precursor is independently between 10 mg and 1000 mg. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein a flame temperature is less than 500 0 C during the microwave plasma torch (MPT) chemical vapor deposition process. Previously presented
The method of growing metal-doped graphene as claimed in claim 1, wherein a microwave power ranges from 100W to 2000W during the micro plasma torch (MPT) chemical vapor deposition process. Previously presented
The method of growing metal- d oped graphene as claimed in claim 1, wherein a deposition ti m e ranges from 0.5 m in to 1 0 min during the micro plasma torch (M PT) chemical vapor deposition process. Previously presented
The method of growing metal -doped graphene as claimed in claim 1, wherein a working pressure ranges from 0.001 torr to 300 t orr during the micro plasma torch (MPT) chemical vapor deposition process. Previously presented
1 3. The method of growing metal-doped graphe n e as claimed in claim 1, wherein the step of forming the metal-doped graphene comprises growing graphene and doping metal at the s am e time. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein the step of forming the metal-doped graphene further comprises providing inert gas. Original
The method of growing metal-doped graphene as claimed in claim 1, wherein the step of forming the metal-doped graphene further comprises doping nitrogen. Original
4-5 Canceled
Canceled
Canceled
16-21 Canceled
Canceled
A method of growing metal-doped graphene, co m prising the steps of: providing a carbon precursor, a metal precursor, and a group V I precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and perfo rm ing a microwave plasma torch (MPT) chemical vapor deposition process o n the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a flame temperature is less than 500 0 C during the m icrowave plasma torch (M PT) chemical vapor deposition process. New
A method of growing metal-doped gr aph ene, comprising the steps of: providing a carbon precursor, a metal precursor, and a group VI precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and performing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a microwave power ranges from 100W to 200 0W during the micro plasma torch (MPT) chemical vapor deposition process. New
A method of growing metal-doped graphene, comprising the steps of: providing a carbon precursor, a metal precursor, and a group VI precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and per form ing a microwave plasma torch (MP T) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group V I precursor in o rder to fo nn a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a deposition time ranges from 0.5 m in to 1 0 min during the micro plasma torch (MPT) chemical vapor deposition process. New
A method of growing metal-doped g r aphene, comprising the steps of: providing a carbon precursor, a metal precursor, and a group VI precursor; adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and perfo rm ing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group V I precursor in order to for m a metal-doped graphene, wherein the metal precursor comprises al u minum precursor, palladium precursor or iron precursor, and a working pressure ranges from 0.001 torr to 300 torr d u ring the micro plasma torch (MPT) chemical vapor deposition process. New
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials1 process step
Growth of aluminum-doped graphene by MPT CVD process. A titanium substrate was placed in a quartz reactor; 200 mg of aluminum trichloride (metal precursor) and 50 mg of diphenyl disulfide (BDS, group VI precursor) were added; methane (carbon precursor) and nitrogen gas were introduced at a flow rate ratio of 1:4. Working pressure was set below 0.05 torr; microwave power was 800 W; process time was 15 minutes. XPS analysis showed aluminum doping ratio of 8 at%, sulfur doping ratio of 2 at%, and nitrogen doping ratio of 5.4 at%.
Materials described outside the worked examples.
metal-doped graphene
ferric chloride
FeCl₃
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
aluminum doping ratio in aluminum-doped graphene (XPS) | 8 at% | aluminum-doped graphene |
palladium dichloride
PdCl₂
group VI precursor
hydrocarbon gas
sulfur, oxygen or selenium
aluminum precursor
palladium precursor
iron precursor
| 2 at% |
aluminum-doped graphene |
nitrogen doping ratio in aluminum-doped graphene (XPS) | 5.4 at% | aluminum-doped graphene |
metal element content range in metal-doped graphene (claimed) | 1–30 at% | metal-doped graphene |
sulfur or selenium content in metal-doped graphene | 0.5–6 at% | metal-doped graphene |
oxygen content in metal-doped graphene when group VI element is oxygen | 1–30 at% | metal-doped graphene |
nitrogen content in metal-doped graphene when N2 introduced during PECVD | 1–8 at% | metal-doped graphene |
— | 0–2000 W | — |
Pressure | 0.001–300 torr | — |
Voltage | 0.2–0.9 V | — |
Temperature | ≤ 500 °C | — |
Pressure | ≤ 0.05 torr | — |
— | 100–2000 W | — |
palladium dichloride
PdCl₂
group VI precursor
hydrocarbon gas
sulfur, oxygen or selenium
aluminum precursor
palladium precursor
iron precursor
| 2 at% |
aluminum-doped graphene |
nitrogen doping ratio in aluminum-doped graphene (XPS) | 5.4 at% | aluminum-doped graphene |
metal element content range in metal-doped graphene (claimed) | 1–30 at% | metal-doped graphene |
sulfur or selenium content in metal-doped graphene | 0.5–6 at% | metal-doped graphene |
oxygen content in metal-doped graphene when group VI element is oxygen | 1–30 at% | metal-doped graphene |
nitrogen content in metal-doped graphene when N2 introduced during PECVD | 1–8 at% | metal-doped graphene |
— | 0–2000 W | — |
Pressure | 0.001–300 torr | — |
Voltage | 0.2–0.9 V | — |
Temperature | ≤ 500 °C | — |
Pressure | ≤ 0.05 torr | — |
— | 100–2000 W | — |
palladium dichloride
PdCl₂
group VI precursor
hydrocarbon gas
sulfur, oxygen or selenium
aluminum precursor
palladium precursor
iron precursor
| 2 at% |
aluminum-doped graphene |
nitrogen doping ratio in aluminum-doped graphene (XPS) | 5.4 at% | aluminum-doped graphene |
metal element content range in metal-doped graphene (claimed) | 1–30 at% | metal-doped graphene |
sulfur or selenium content in metal-doped graphene | 0.5–6 at% | metal-doped graphene |
oxygen content in metal-doped graphene when group VI element is oxygen | 1–30 at% | metal-doped graphene |
nitrogen content in metal-doped graphene when N2 introduced during PECVD | 1–8 at% | metal-doped graphene |
— | 0–2000 W | — |
Pressure | 0.001–300 torr | — |
Voltage | 0.2–0.9 V | — |
Temperature | ≤ 500 °C | — |
Pressure | ≤ 0.05 torr | — |
— | 100–2000 W | — |
palladium dichloride
PdCl₂
group VI precursor
hydrocarbon gas
sulfur, oxygen or selenium
aluminum precursor
palladium precursor
iron precursor
| 2 at% |
aluminum-doped graphene |
nitrogen doping ratio in aluminum-doped graphene (XPS) | 5.4 at% | aluminum-doped graphene |
metal element content range in metal-doped graphene (claimed) | 1–30 at% | metal-doped graphene |
sulfur or selenium content in metal-doped graphene | 0.5–6 at% | metal-doped graphene |
oxygen content in metal-doped graphene when group VI element is oxygen | 1–30 at% | metal-doped graphene |
nitrogen content in metal-doped graphene when N2 introduced during PECVD | 1–8 at% | metal-doped graphene |
— | 0–2000 W | — |
Pressure | 0.001–300 torr | — |
Voltage | 0.2–0.9 V | — |
Temperature | ≤ 500 °C | — |
Pressure | ≤ 0.05 torr | — |
— | 100–2000 W | — |