The manufacturing method of a g raphene substrate according to claim 1, further 10 compr i sing; (c) removing the metal layer after the (b).

5. The manufacturing method of a g raphene substrate according to any one of claims 1 30 to 4, wherein the carbide layer comprises at least one selected from the g roup consisting of silicon carbide (SiC), boron carbide (B 4C), aluminum carbide (A laC₃), titanium carbide (TiC), zirconium carbide (Z rC), hafnium carbide (H fC), vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (CrC), molybdenum carbide (MoC), and tungsten carbide (WC).

The manufacturing method of a g raphene substrate according to any one of claims 1 to 5, wherein the metal layer comprises at least one selected from the g roup consisting of gallium (Ga), indium (In), thallium (T l), tin (Sn), lead (Pb), bismuth (Bi), zin c (Zn), and cadmium (Cd).

The manufacturing method of a g raphene substrate according to any one of claims 1 to 6, wherein the heating temperature in the (a) is 800 to 1200 °C.

The manufacturing method of a g raphene substrate according to any one of claims 1 to 8, wherein in the (a), the metal layer is placed in a holder, the carbide layer is then placed on the metal layer, and the metal layer and the carbide layer are heated to dissolve carbon in the car bide layer into the metal layer.

The manufacturing method of a g raphene substrate according to any one of claims 1 to 8, wherein in the (a), the substrate is placed in a holder, a frame is placed on the substrate, 20 the metal layer is placed in the frame, a second substrate is placed thereon, and the metal layer, the carbide layer, and the second substrate are heated to dissolve carbon in the carbide layer into the metal layer. 1 1. The manufacturing method of a g raphene substrate according to any one of claims 25 1 to 10, wherein the carbide layer comprises a concavo-convex shape.

The manufacturing method of a g raphene substrate according to claim 1 1, wherein g raphene is segregated on both the projections and recesses of the concavo-convex shape of the car bide layer.

15. A g raphene substrate manufactured by substrate according to any one of claims 1 to 14.

A semiconductor device manufactured using substrate according to claim 1 1, wherein in the of the concavo-convex shape of the car bide substrate according to claim 1 1, wherein in the projections of the concavo-convex shape. the manufacturing method of a g raphene the g raphene substrate according to claim 1 5.

The manufacturing method of a g raphene substrate according to claim 1, further 10 compr i sing; (c) removing the metal layer after the (b).

5. The manufacturing method of a g raphene substrate according to any one of claims 1 30 to 4, wherein the carbide layer comprises at least one selected from the g roup consisting of silicon carbide (SiC), boron carbide (B 4C), aluminum carbide (A laC₃), titanium carbide (TiC), zirconium carbide (Z rC), hafnium carbide (H fC), vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (CrC), molybdenum carbide (MoC), and tungsten carbide (WC).

The manufacturing method of a g raphene substrate according to any one of claims 1 to 5, wherein the metal layer comprises at least one selected from the g roup consisting of gallium (Ga), indium (In), thallium (T l), tin (Sn), lead (Pb), bismuth (Bi), zin c (Zn), and cadmium (Cd).

The manufacturing method of a g raphene substrate according to any one of claims 1 to 6, wherein the heating temperature in the (a) is 800 to 1200 °C.

The manufacturing method of a g raphene substrate according to any one of claims 1 to 8, wherein in the (a), the metal layer is placed in a holder, the carbide layer is then placed on the metal layer, and the metal layer and the carbide layer are heated to dissolve carbon in the car bide layer into the metal layer.

The manufacturing method of a g raphene substrate according to any one of claims 1 to 8, wherein in the (a), the substrate is placed in a holder, a frame is placed on the substrate, 20 the metal layer is placed in the frame, a second substrate is placed thereon, and the metal layer, the carbide layer, and the second substrate are heated to dissolve carbon in the carbide layer into the metal layer. 1 1. The manufacturing method of a g raphene substrate according to any one of claims 25 1 to 10, wherein the carbide layer comprises a concavo-convex shape.

The manufacturing method of a g raphene substrate according to claim 1 1, wherein g raphene is segregated on both the projections and recesses of the concavo-convex shape of the car bide layer.

15. A g raphene substrate manufactured by substrate according to any one of claims 1 to 14.

A semiconductor device manufactured using substrate according to claim 1 1, wherein in the of the concavo-convex shape of the car bide substrate according to claim 1 1, wherein in the projections of the concavo-convex shape. the manufacturing method of a g raphene the g raphene substrate according to claim 1 5.

The manufacturing method of a g raphene substrate according to claim 1, further 10 compr i sing; (c) removing the metal layer after the (b).

5. The manufacturing method of a g raphene substrate according to any one of claims 1 30 to 4, wherein the carbide layer comprises at least one selected from the g roup consisting of silicon carbide (SiC), boron carbide (B 4C), aluminum carbide (A laC₃), titanium carbide (TiC), zirconium carbide (Z rC), hafnium carbide (H fC), vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (CrC), molybdenum carbide (MoC), and tungsten carbide (WC).

The manufacturing method of a g raphene substrate according to any one of claims 1 to 5, wherein the metal layer comprises at least one selected from the g roup consisting of gallium (Ga), indium (In), thallium (T l), tin (Sn), lead (Pb), bismuth (Bi), zin c (Zn), and cadmium (Cd).

The manufacturing method of a g raphene substrate according to any one of claims 1 to 6, wherein the heating temperature in the (a) is 800 to 1200 °C.

The manufacturing method of a g raphene substrate according to any one of claims 1 to 8, wherein in the (a), the metal layer is placed in a holder, the carbide layer is then placed on the metal layer, and the metal layer and the carbide layer are heated to dissolve carbon in the car bide layer into the metal layer.

The manufacturing method of a g raphene substrate according to any one of claims 1 to 8, wherein in the (a), the substrate is placed in a holder, a frame is placed on the substrate, 20 the metal layer is placed in the frame, a second substrate is placed thereon, and the metal layer, the carbide layer, and the second substrate are heated to dissolve carbon in the carbide layer into the metal layer. 1 1. The manufacturing method of a g raphene substrate according to any one of claims 25 1 to 10, wherein the carbide layer comprises a concavo-convex shape.

The manufacturing method of a g raphene substrate according to claim 1 1, wherein g raphene is segregated on both the projections and recesses of the concavo-convex shape of the car bide layer.

15. A g raphene substrate manufactured by substrate according to any one of claims 1 to 14.

A semiconductor device manufactured using substrate according to claim 1 1, wherein in the of the concavo-convex shape of the car bide substrate according to claim 1 1, wherein in the projections of the concavo-convex shape. the manufacturing method of a g raphene the g raphene substrate according to claim 1 5.

The manufacturing method of a g raphene substrate according to claim 1, further 10 compr i sing; (c) removing the metal layer after the (b).

5. The manufacturing method of a g raphene substrate according to any one of claims 1 30 to 4, wherein the carbide layer comprises at least one selected from the g roup consisting of silicon carbide (SiC), boron carbide (B 4C), aluminum carbide (A laC₃), titanium carbide (TiC), zirconium carbide (Z rC), hafnium carbide (H fC), vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (CrC), molybdenum carbide (MoC), and tungsten carbide (WC).

The manufacturing method of a g raphene substrate according to any one of claims 1 to 5, wherein the metal layer comprises at least one selected from the g roup consisting of gallium (Ga), indium (In), thallium (T l), tin (Sn), lead (Pb), bismuth (Bi), zin c (Zn), and cadmium (Cd).

The manufacturing method of a g raphene substrate according to any one of claims 1 to 6, wherein the heating temperature in the (a) is 800 to 1200 °C.

The manufacturing method of a g raphene substrate according to any one of claims 1 to 8, wherein in the (a), the metal layer is placed in a holder, the carbide layer is then placed on the metal layer, and the metal layer and the carbide layer are heated to dissolve carbon in the car bide layer into the metal layer.

The manufacturing method of a g raphene substrate according to any one of claims 1 to 8, wherein in the (a), the substrate is placed in a holder, a frame is placed on the substrate, 20 the metal layer is placed in the frame, a second substrate is placed thereon, and the metal layer, the carbide layer, and the second substrate are heated to dissolve carbon in the carbide layer into the metal layer. 1 1. The manufacturing method of a g raphene substrate according to any one of claims 25 1 to 10, wherein the carbide layer comprises a concavo-convex shape.

The manufacturing method of a g raphene substrate according to claim 1 1, wherein g raphene is segregated on both the projections and recesses of the concavo-convex shape of the car bide layer.

15. A g raphene substrate manufactured by substrate according to any one of claims 1 to 14.

A semiconductor device manufactured using substrate according to claim 1 1, wherein in the of the concavo-convex shape of the car bide substrate according to claim 1 1, wherein in the projections of the concavo-convex shape. the manufacturing method of a g raphene the g raphene substrate according to claim 1 5.