Patent
US 8,274,764MAGNETO-RESISTIVE EFFECT ELEMENT PROVIDED WITH GaN SPACER LAYER
Shinji Hara
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,274,764Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
The MR element according to claim [[2]] 4, wherein a diff u sion prevention layer that is made of one element from the group of Cu, Au, Ag, Zn, Cr, Rh, Pt, Pd, and Ir, is provided in a boundary; between the spacer layer and the first magnetic layer, between the spacer layer and the second magnetic layer, or in both of the boundaries.
, A magneto-resistive effect element (MR element) comprising: a first magnetic la y er and a second magnetic la y er in which a relative angle of ma g netization directions of the first and second magnetic la y ers changes according to an external magnetic field; and a spacer la y er that is provided between the first magnetic la v er and the second magnetic la v er, wherein the spacer la v er contains gallium nitride (GaN) as a main component, both the first magnetic la v er and the second magnetic la v er contains a non-metal added magnetic la v er, the non-metal added magnetic la v er facing the spacer la v er and being where -2- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 April 2012 the no meta added magnet layer structured of/in (CoFe)ioo xOx (x is an atomic fraction and satisfied with 1 < x < 10).
The M eleme nt a ccord ing to clai A magneto-resistive effect element (MR element) comprising: a first magnetic la y er and a second magnetic la y er in which a relative angle of ma g netization directions of the first and second ma g netic la y ers changes according to an external ma g netic field; and a spacer la y er that is provided between the first magnetic la y er and the second magnetic la v er, wherein the spacer la y er contains gallium nitride (GaN) as a main component, both the first magnetic la v er and the second magnetic la v er contains a non-metal added magnetic la y er, the non-metal added magnetic la y er facing the spacer la y er and being w he r ei n the no meta added magnet layer structured with i n (CoFe)ioo yNy (y is an atomic fraction and satisfied with 1 < y < 20).
The MR element according to claim 5, wherein a diffusion prevention layer that is made of one element from the group of Cu, Au, Ag, Zn, Cr, Rh, Pt, Pd, and Ir, is provided -5- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 Ap ril 2012 in a boundary; between the spacer layer and the first magnetic layer, between the spacer layer and the second magnetic layer, or in both of the boundaries.
A thin film magnetic head comprising: the MR element according to claim 5 that comprises the first magnetic layer and the second magnetic layer as free layers whose magnetization direction changes according to the external magnetic field; and a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS) and the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS, wherein a sense current flows in a perpendicular direction to layer surfaces of the MR element.
A thin film magnetic head comprising: the MR element according to claim 5 that comprises the first magnetic layer as a reference layer, the magnetization direction of which is fixed regardless of the external magnetic field, and the second magnetic layer as a free layer, the magnetization direction of which changes according to the external magnetic field; and a bias magnetic field application layer, which is formed on both sides of the MR element in a track width direction and applies a bias magnetic field to the second magnetic layer in a track width direction.
The M eleme nt a ccord ing to clai A magneto-resistive effect element (MR element) comprising: a first magnetic la y er and a second magnetic la y er in which a relative angle of magnetization directions of the first and second magnetic la y ers changes according to an external magnetic field; and a spacer la y er that is provided between the first magnetic la y er and the second magnetic la v er, wherein -3- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 April 2012 the spacer la y er contains gallium nitride (GaN) as a main component, both the first magnetic la v er and the second magnetic la v er contains a non-metal added magnetic la y er, the non-metal added magnetic la y er facing the spacer la y er and being wheei the non metal added magnetic laye structured with i n (NiFe)ioo -zOz (z is an atomic fraction and satisfied with 1 < z < 10).
The MR element according to claim 6, wherein a diffusion prevention layer that is made of one element from the group of Cu, Au, Ag, Zn, Cr, Rh, Pt, Pd, and Ir, is provided in a boundary; between the spacer layer and the first magnetic layer, between the spacer layer and the second magnetic layer, or in both of the boundaries.
A thin film magnetic head comprising: the MR element according to claim 6 that comprises the first magnetic layer and the second magnetic layer as free layers whose magnetization direction changes according to the external magnetic field; and a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS) and the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS, wherein a sense current flows in a perpendicular direction to layer surfaces of the MR element.
A thin film magnetic head comprising: the MR element according to claim 6 that comprises the first magnetic layer as a reference layer, the magnetization direction of which is fixed regardless of the external magnetic field, and the second magnetic layer as a free layer, the magnetization direction of which changes according to the external magnetic field; and -7- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 April 2012 a bias magnetic field application layer, which is formed on both sides of the MR element in a track width direction and applies a bias magnetic field to the second magnetic layer in a track width direction.
, A magneto-resistive effect element (MR element) comprising: a first magnetic la y er and a second magnetic la y er in which a relative angle of magnetization directions of the first and second magnetic la y ers changes according to an external magnetic field; and a spacer la y er that is provided between the first magnetic la y er and the second magnetic la v er, wherein the spacer la y er contains gallium nitride (GaN) as a main component, both the first magnetic la v er and the second magnetic la v er contains a non-metal added magnetic la y er, the non-metal added magnetic la y er facing the spacer la y er and being wheem the n m s tructured with i n (- Nife4oAG, (NiFe)ioo_,N (w is an atomic fraction and satisfied with 1 < w < 30).
The MR element according to claim 7, wherein a diffusion prevention layer that is made of one element from the group of Cu, Au, Ag, Zn, Cr, Rh, Pt, Pd, and Ir, is provided in a boundary; between the spacer layer and the first magnetic layer, between the spacer layer and the second magnetic layer, or in both of the boundaries.
A thin film magnetic head comprising: the MR element according to claim 7 that comprises the first magnetic layer and the second magnetic layer as free layers whose magnetization direction changes according to the external magnetic field; and a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS) and the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS, wherein a sense current flows in a perpendicular direction to layer surfaces of the MR element.
A thin film magnetic head comprising: the MR element according to claim 7 that comprises the first magnetic layer as a reference layer, the magnetization direction of which is fixed regardless of the external magnetic field, and the second magnetic layer as a free layer, the magnetization direction of which changes according to the external magnetic field; and a bias magnetic field application layer, which is formed on both sides of the MR element in a track width direction and applies a bias magnetic field to the second magnetic layer in a track width direction.
A thin film magnetic head comprising: the MR element according to claim [[2]] 4 that comprises the first magnetic layer and the second magnetic layer as free layers whose magnetization direction changes according to the external magnetic field; and -4- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 April 2012 a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS) and the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS, wherein a sense current flows in a perpendicular direction to layer surfaces of the MR element.
A slider equipped with the thin film magnetic head according to claim 8.
A thin film magnetic head comprising: the MR element according to claim [[2]] 4 that comprises the first magnetic layer as a reference layer, the magnetization direction of which is fixed regardless of the external magnetic field, and the second magnetic layer as a free layer, the magnetization direction of which changes according to the external magnetic field; and a bias magnetic field application layer, which is formed on both sides of the MR element in a track width direction and applies a bias magnetic field to the second magnetic layer in a track width direction.
A slider equipped with the thin film magnetic head according to claim 9.
11-13. canceled
canceled
canceled
15-19. canceled
canceled
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Layer stacks claimed or described, ordered top of device to substrate.
magneto-resistive effect element (MR element)
Materials described outside the worked examples.
gallium nitride
GaN
(CoFe)100-xOx
CoFe
Patent
Atlas literature
Patent
US 8,274,764Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
The MR element according to claim [[2]] 4, wherein a diff u sion prevention layer that is made of one element from the group of Cu, Au, Ag, Zn, Cr, Rh, Pt, Pd, and Ir, is provided in a boundary; between the spacer layer and the first magnetic layer, between the spacer layer and the second magnetic layer, or in both of the boundaries.
, A magneto-resistive effect element (MR element) comprising: a first magnetic la y er and a second magnetic la y er in which a relative angle of ma g netization directions of the first and second magnetic la y ers changes according to an external magnetic field; and a spacer la y er that is provided between the first magnetic la v er and the second magnetic la v er, wherein the spacer la v er contains gallium nitride (GaN) as a main component, both the first magnetic la v er and the second magnetic la v er contains a non-metal added magnetic la v er, the non-metal added magnetic la v er facing the spacer la v er and being where -2- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 April 2012 the no meta added magnet layer structured of/in (CoFe)ioo xOx (x is an atomic fraction and satisfied with 1 < x < 10).
The M eleme nt a ccord ing to clai A magneto-resistive effect element (MR element) comprising: a first magnetic la y er and a second magnetic la y er in which a relative angle of ma g netization directions of the first and second ma g netic la y ers changes according to an external ma g netic field; and a spacer la y er that is provided between the first magnetic la y er and the second magnetic la v er, wherein the spacer la y er contains gallium nitride (GaN) as a main component, both the first magnetic la v er and the second magnetic la v er contains a non-metal added magnetic la y er, the non-metal added magnetic la y er facing the spacer la y er and being w he r ei n the no meta added magnet layer structured with i n (CoFe)ioo yNy (y is an atomic fraction and satisfied with 1 < y < 20).
The MR element according to claim 5, wherein a diffusion prevention layer that is made of one element from the group of Cu, Au, Ag, Zn, Cr, Rh, Pt, Pd, and Ir, is provided -5- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 Ap ril 2012 in a boundary; between the spacer layer and the first magnetic layer, between the spacer layer and the second magnetic layer, or in both of the boundaries.
A thin film magnetic head comprising: the MR element according to claim 5 that comprises the first magnetic layer and the second magnetic layer as free layers whose magnetization direction changes according to the external magnetic field; and a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS) and the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS, wherein a sense current flows in a perpendicular direction to layer surfaces of the MR element.
A thin film magnetic head comprising: the MR element according to claim 5 that comprises the first magnetic layer as a reference layer, the magnetization direction of which is fixed regardless of the external magnetic field, and the second magnetic layer as a free layer, the magnetization direction of which changes according to the external magnetic field; and a bias magnetic field application layer, which is formed on both sides of the MR element in a track width direction and applies a bias magnetic field to the second magnetic layer in a track width direction.
The M eleme nt a ccord ing to clai A magneto-resistive effect element (MR element) comprising: a first magnetic la y er and a second magnetic la y er in which a relative angle of magnetization directions of the first and second magnetic la y ers changes according to an external magnetic field; and a spacer la y er that is provided between the first magnetic la y er and the second magnetic la v er, wherein -3- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 April 2012 the spacer la y er contains gallium nitride (GaN) as a main component, both the first magnetic la v er and the second magnetic la v er contains a non-metal added magnetic la y er, the non-metal added magnetic la y er facing the spacer la y er and being wheei the non metal added magnetic laye structured with i n (NiFe)ioo -zOz (z is an atomic fraction and satisfied with 1 < z < 10).
The MR element according to claim 6, wherein a diffusion prevention layer that is made of one element from the group of Cu, Au, Ag, Zn, Cr, Rh, Pt, Pd, and Ir, is provided in a boundary; between the spacer layer and the first magnetic layer, between the spacer layer and the second magnetic layer, or in both of the boundaries.
A thin film magnetic head comprising: the MR element according to claim 6 that comprises the first magnetic layer and the second magnetic layer as free layers whose magnetization direction changes according to the external magnetic field; and a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS) and the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS, wherein a sense current flows in a perpendicular direction to layer surfaces of the MR element.
A thin film magnetic head comprising: the MR element according to claim 6 that comprises the first magnetic layer as a reference layer, the magnetization direction of which is fixed regardless of the external magnetic field, and the second magnetic layer as a free layer, the magnetization direction of which changes according to the external magnetic field; and -7- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 April 2012 a bias magnetic field application layer, which is formed on both sides of the MR element in a track width direction and applies a bias magnetic field to the second magnetic layer in a track width direction.
, A magneto-resistive effect element (MR element) comprising: a first magnetic la y er and a second magnetic la y er in which a relative angle of magnetization directions of the first and second magnetic la y ers changes according to an external magnetic field; and a spacer la y er that is provided between the first magnetic la y er and the second magnetic la v er, wherein the spacer la y er contains gallium nitride (GaN) as a main component, both the first magnetic la v er and the second magnetic la v er contains a non-metal added magnetic la y er, the non-metal added magnetic la y er facing the spacer la y er and being wheem the n m s tructured with i n (- Nife4oAG, (NiFe)ioo_,N (w is an atomic fraction and satisfied with 1 < w < 30).
The MR element according to claim 7, wherein a diffusion prevention layer that is made of one element from the group of Cu, Au, Ag, Zn, Cr, Rh, Pt, Pd, and Ir, is provided in a boundary; between the spacer layer and the first magnetic layer, between the spacer layer and the second magnetic layer, or in both of the boundaries.
A thin film magnetic head comprising: the MR element according to claim 7 that comprises the first magnetic layer and the second magnetic layer as free layers whose magnetization direction changes according to the external magnetic field; and a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS) and the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS, wherein a sense current flows in a perpendicular direction to layer surfaces of the MR element.
A thin film magnetic head comprising: the MR element according to claim 7 that comprises the first magnetic layer as a reference layer, the magnetization direction of which is fixed regardless of the external magnetic field, and the second magnetic layer as a free layer, the magnetization direction of which changes according to the external magnetic field; and a bias magnetic field application layer, which is formed on both sides of the MR element in a track width direction and applies a bias magnetic field to the second magnetic layer in a track width direction.
A thin film magnetic head comprising: the MR element according to claim [[2]] 4 that comprises the first magnetic layer and the second magnetic layer as free layers whose magnetization direction changes according to the external magnetic field; and -4- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 April 2012 a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS) and the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS, wherein a sense current flows in a perpendicular direction to layer surfaces of the MR element.
A slider equipped with the thin film magnetic head according to claim 8.
A thin film magnetic head comprising: the MR element according to claim [[2]] 4 that comprises the first magnetic layer as a reference layer, the magnetization direction of which is fixed regardless of the external magnetic field, and the second magnetic layer as a free layer, the magnetization direction of which changes according to the external magnetic field; and a bias magnetic field application layer, which is formed on both sides of the MR element in a track width direction and applies a bias magnetic field to the second magnetic layer in a track width direction.
A slider equipped with the thin film magnetic head according to claim 9.
11-13. canceled
canceled
canceled
15-19. canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
magneto-resistive effect element (MR element)
Materials described outside the worked examples.
gallium nitride
GaN
(CoFe)100-xOx
CoFe
Patent
Atlas literature
Patent
US 8,274,764Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
The MR element according to claim [[2]] 4, wherein a diff u sion prevention layer that is made of one element from the group of Cu, Au, Ag, Zn, Cr, Rh, Pt, Pd, and Ir, is provided in a boundary; between the spacer layer and the first magnetic layer, between the spacer layer and the second magnetic layer, or in both of the boundaries.
, A magneto-resistive effect element (MR element) comprising: a first magnetic la y er and a second magnetic la y er in which a relative angle of ma g netization directions of the first and second magnetic la y ers changes according to an external magnetic field; and a spacer la y er that is provided between the first magnetic la v er and the second magnetic la v er, wherein the spacer la v er contains gallium nitride (GaN) as a main component, both the first magnetic la v er and the second magnetic la v er contains a non-metal added magnetic la v er, the non-metal added magnetic la v er facing the spacer la v er and being where -2- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 April 2012 the no meta added magnet layer structured of/in (CoFe)ioo xOx (x is an atomic fraction and satisfied with 1 < x < 10).
The M eleme nt a ccord ing to clai A magneto-resistive effect element (MR element) comprising: a first magnetic la y er and a second magnetic la y er in which a relative angle of ma g netization directions of the first and second ma g netic la y ers changes according to an external ma g netic field; and a spacer la y er that is provided between the first magnetic la y er and the second magnetic la v er, wherein the spacer la y er contains gallium nitride (GaN) as a main component, both the first magnetic la v er and the second magnetic la v er contains a non-metal added magnetic la y er, the non-metal added magnetic la y er facing the spacer la y er and being w he r ei n the no meta added magnet layer structured with i n (CoFe)ioo yNy (y is an atomic fraction and satisfied with 1 < y < 20).
The MR element according to claim 5, wherein a diffusion prevention layer that is made of one element from the group of Cu, Au, Ag, Zn, Cr, Rh, Pt, Pd, and Ir, is provided -5- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 Ap ril 2012 in a boundary; between the spacer layer and the first magnetic layer, between the spacer layer and the second magnetic layer, or in both of the boundaries.
A thin film magnetic head comprising: the MR element according to claim 5 that comprises the first magnetic layer and the second magnetic layer as free layers whose magnetization direction changes according to the external magnetic field; and a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS) and the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS, wherein a sense current flows in a perpendicular direction to layer surfaces of the MR element.
A thin film magnetic head comprising: the MR element according to claim 5 that comprises the first magnetic layer as a reference layer, the magnetization direction of which is fixed regardless of the external magnetic field, and the second magnetic layer as a free layer, the magnetization direction of which changes according to the external magnetic field; and a bias magnetic field application layer, which is formed on both sides of the MR element in a track width direction and applies a bias magnetic field to the second magnetic layer in a track width direction.
The M eleme nt a ccord ing to clai A magneto-resistive effect element (MR element) comprising: a first magnetic la y er and a second magnetic la y er in which a relative angle of magnetization directions of the first and second magnetic la y ers changes according to an external magnetic field; and a spacer la y er that is provided between the first magnetic la y er and the second magnetic la v er, wherein -3- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 April 2012 the spacer la y er contains gallium nitride (GaN) as a main component, both the first magnetic la v er and the second magnetic la v er contains a non-metal added magnetic la y er, the non-metal added magnetic la y er facing the spacer la y er and being wheei the non metal added magnetic laye structured with i n (NiFe)ioo -zOz (z is an atomic fraction and satisfied with 1 < z < 10).
The MR element according to claim 6, wherein a diffusion prevention layer that is made of one element from the group of Cu, Au, Ag, Zn, Cr, Rh, Pt, Pd, and Ir, is provided in a boundary; between the spacer layer and the first magnetic layer, between the spacer layer and the second magnetic layer, or in both of the boundaries.
A thin film magnetic head comprising: the MR element according to claim 6 that comprises the first magnetic layer and the second magnetic layer as free layers whose magnetization direction changes according to the external magnetic field; and a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS) and the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS, wherein a sense current flows in a perpendicular direction to layer surfaces of the MR element.
A thin film magnetic head comprising: the MR element according to claim 6 that comprises the first magnetic layer as a reference layer, the magnetization direction of which is fixed regardless of the external magnetic field, and the second magnetic layer as a free layer, the magnetization direction of which changes according to the external magnetic field; and -7- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 April 2012 a bias magnetic field application layer, which is formed on both sides of the MR element in a track width direction and applies a bias magnetic field to the second magnetic layer in a track width direction.
, A magneto-resistive effect element (MR element) comprising: a first magnetic la y er and a second magnetic la y er in which a relative angle of magnetization directions of the first and second magnetic la y ers changes according to an external magnetic field; and a spacer la y er that is provided between the first magnetic la y er and the second magnetic la v er, wherein the spacer la y er contains gallium nitride (GaN) as a main component, both the first magnetic la v er and the second magnetic la v er contains a non-metal added magnetic la y er, the non-metal added magnetic la y er facing the spacer la y er and being wheem the n m s tructured with i n (- Nife4oAG, (NiFe)ioo_,N (w is an atomic fraction and satisfied with 1 < w < 30).
The MR element according to claim 7, wherein a diffusion prevention layer that is made of one element from the group of Cu, Au, Ag, Zn, Cr, Rh, Pt, Pd, and Ir, is provided in a boundary; between the spacer layer and the first magnetic layer, between the spacer layer and the second magnetic layer, or in both of the boundaries.
A thin film magnetic head comprising: the MR element according to claim 7 that comprises the first magnetic layer and the second magnetic layer as free layers whose magnetization direction changes according to the external magnetic field; and a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS) and the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS, wherein a sense current flows in a perpendicular direction to layer surfaces of the MR element.
A thin film magnetic head comprising: the MR element according to claim 7 that comprises the first magnetic layer as a reference layer, the magnetization direction of which is fixed regardless of the external magnetic field, and the second magnetic layer as a free layer, the magnetization direction of which changes according to the external magnetic field; and a bias magnetic field application layer, which is formed on both sides of the MR element in a track width direction and applies a bias magnetic field to the second magnetic layer in a track width direction.
A thin film magnetic head comprising: the MR element according to claim [[2]] 4 that comprises the first magnetic layer and the second magnetic layer as free layers whose magnetization direction changes according to the external magnetic field; and -4- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 April 2012 a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS) and the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS, wherein a sense current flows in a perpendicular direction to layer surfaces of the MR element.
A slider equipped with the thin film magnetic head according to claim 8.
A thin film magnetic head comprising: the MR element according to claim [[2]] 4 that comprises the first magnetic layer as a reference layer, the magnetization direction of which is fixed regardless of the external magnetic field, and the second magnetic layer as a free layer, the magnetization direction of which changes according to the external magnetic field; and a bias magnetic field application layer, which is formed on both sides of the MR element in a track width direction and applies a bias magnetic field to the second magnetic layer in a track width direction.
A slider equipped with the thin film magnetic head according to claim 9.
11-13. canceled
canceled
canceled
15-19. canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
magneto-resistive effect element (MR element)
Materials described outside the worked examples.
gallium nitride
GaN
(CoFe)100-xOx
CoFe
Patent
Atlas literature
Patent
US 8,274,764Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
The MR element according to claim [[2]] 4, wherein a diff u sion prevention layer that is made of one element from the group of Cu, Au, Ag, Zn, Cr, Rh, Pt, Pd, and Ir, is provided in a boundary; between the spacer layer and the first magnetic layer, between the spacer layer and the second magnetic layer, or in both of the boundaries.
, A magneto-resistive effect element (MR element) comprising: a first magnetic la y er and a second magnetic la y er in which a relative angle of ma g netization directions of the first and second magnetic la y ers changes according to an external magnetic field; and a spacer la y er that is provided between the first magnetic la v er and the second magnetic la v er, wherein the spacer la v er contains gallium nitride (GaN) as a main component, both the first magnetic la v er and the second magnetic la v er contains a non-metal added magnetic la v er, the non-metal added magnetic la v er facing the spacer la v er and being where -2- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 April 2012 the no meta added magnet layer structured of/in (CoFe)ioo xOx (x is an atomic fraction and satisfied with 1 < x < 10).
The M eleme nt a ccord ing to clai A magneto-resistive effect element (MR element) comprising: a first magnetic la y er and a second magnetic la y er in which a relative angle of ma g netization directions of the first and second ma g netic la y ers changes according to an external ma g netic field; and a spacer la y er that is provided between the first magnetic la y er and the second magnetic la v er, wherein the spacer la y er contains gallium nitride (GaN) as a main component, both the first magnetic la v er and the second magnetic la v er contains a non-metal added magnetic la y er, the non-metal added magnetic la y er facing the spacer la y er and being w he r ei n the no meta added magnet layer structured with i n (CoFe)ioo yNy (y is an atomic fraction and satisfied with 1 < y < 20).
The MR element according to claim 5, wherein a diffusion prevention layer that is made of one element from the group of Cu, Au, Ag, Zn, Cr, Rh, Pt, Pd, and Ir, is provided -5- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 Ap ril 2012 in a boundary; between the spacer layer and the first magnetic layer, between the spacer layer and the second magnetic layer, or in both of the boundaries.
A thin film magnetic head comprising: the MR element according to claim 5 that comprises the first magnetic layer and the second magnetic layer as free layers whose magnetization direction changes according to the external magnetic field; and a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS) and the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS, wherein a sense current flows in a perpendicular direction to layer surfaces of the MR element.
A thin film magnetic head comprising: the MR element according to claim 5 that comprises the first magnetic layer as a reference layer, the magnetization direction of which is fixed regardless of the external magnetic field, and the second magnetic layer as a free layer, the magnetization direction of which changes according to the external magnetic field; and a bias magnetic field application layer, which is formed on both sides of the MR element in a track width direction and applies a bias magnetic field to the second magnetic layer in a track width direction.
The M eleme nt a ccord ing to clai A magneto-resistive effect element (MR element) comprising: a first magnetic la y er and a second magnetic la y er in which a relative angle of magnetization directions of the first and second magnetic la y ers changes according to an external magnetic field; and a spacer la y er that is provided between the first magnetic la y er and the second magnetic la v er, wherein -3- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 April 2012 the spacer la y er contains gallium nitride (GaN) as a main component, both the first magnetic la v er and the second magnetic la v er contains a non-metal added magnetic la y er, the non-metal added magnetic la y er facing the spacer la y er and being wheei the non metal added magnetic laye structured with i n (NiFe)ioo -zOz (z is an atomic fraction and satisfied with 1 < z < 10).
The MR element according to claim 6, wherein a diffusion prevention layer that is made of one element from the group of Cu, Au, Ag, Zn, Cr, Rh, Pt, Pd, and Ir, is provided in a boundary; between the spacer layer and the first magnetic layer, between the spacer layer and the second magnetic layer, or in both of the boundaries.
A thin film magnetic head comprising: the MR element according to claim 6 that comprises the first magnetic layer and the second magnetic layer as free layers whose magnetization direction changes according to the external magnetic field; and a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS) and the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS, wherein a sense current flows in a perpendicular direction to layer surfaces of the MR element.
A thin film magnetic head comprising: the MR element according to claim 6 that comprises the first magnetic layer as a reference layer, the magnetization direction of which is fixed regardless of the external magnetic field, and the second magnetic layer as a free layer, the magnetization direction of which changes according to the external magnetic field; and -7- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 April 2012 a bias magnetic field application layer, which is formed on both sides of the MR element in a track width direction and applies a bias magnetic field to the second magnetic layer in a track width direction.
, A magneto-resistive effect element (MR element) comprising: a first magnetic la y er and a second magnetic la y er in which a relative angle of magnetization directions of the first and second magnetic la y ers changes according to an external magnetic field; and a spacer la y er that is provided between the first magnetic la y er and the second magnetic la v er, wherein the spacer la y er contains gallium nitride (GaN) as a main component, both the first magnetic la v er and the second magnetic la v er contains a non-metal added magnetic la y er, the non-metal added magnetic la y er facing the spacer la y er and being wheem the n m s tructured with i n (- Nife4oAG, (NiFe)ioo_,N (w is an atomic fraction and satisfied with 1 < w < 30).
The MR element according to claim 7, wherein a diffusion prevention layer that is made of one element from the group of Cu, Au, Ag, Zn, Cr, Rh, Pt, Pd, and Ir, is provided in a boundary; between the spacer layer and the first magnetic layer, between the spacer layer and the second magnetic layer, or in both of the boundaries.
A thin film magnetic head comprising: the MR element according to claim 7 that comprises the first magnetic layer and the second magnetic layer as free layers whose magnetization direction changes according to the external magnetic field; and a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS) and the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS, wherein a sense current flows in a perpendicular direction to layer surfaces of the MR element.
A thin film magnetic head comprising: the MR element according to claim 7 that comprises the first magnetic layer as a reference layer, the magnetization direction of which is fixed regardless of the external magnetic field, and the second magnetic layer as a free layer, the magnetization direction of which changes according to the external magnetic field; and a bias magnetic field application layer, which is formed on both sides of the MR element in a track width direction and applies a bias magnetic field to the second magnetic layer in a track width direction.
A thin film magnetic head comprising: the MR element according to claim [[2]] 4 that comprises the first magnetic layer and the second magnetic layer as free layers whose magnetization direction changes according to the external magnetic field; and -4- App l e. No. 12/382,137 Response dated 21 May 2012 Reply to Office Action of 5 April 2012 a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS) and the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS, wherein a sense current flows in a perpendicular direction to layer surfaces of the MR element.
A slider equipped with the thin film magnetic head according to claim 8.
A thin film magnetic head comprising: the MR element according to claim [[2]] 4 that comprises the first magnetic layer as a reference layer, the magnetization direction of which is fixed regardless of the external magnetic field, and the second magnetic layer as a free layer, the magnetization direction of which changes according to the external magnetic field; and a bias magnetic field application layer, which is formed on both sides of the MR element in a track width direction and applies a bias magnetic field to the second magnetic layer in a track width direction.
A slider equipped with the thin film magnetic head according to claim 9.
11-13. canceled
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15-19. canceled
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Layer stacks claimed or described, ordered top of device to substrate.
magneto-resistive effect element (MR element)
Materials described outside the worked examples.
gallium nitride
GaN
(CoFe)100-xOx
CoFe
thin film magnetic head
(CoFe)100-yNy
(NiFe)100-zOz
(NiFe)100-wNw
Ru
diffusion prevention layer
thin film magnetic head
(CoFe)100-yNy
(NiFe)100-zOz
(NiFe)100-wNw
Ru
diffusion prevention layer
thin film magnetic head
(CoFe)100-yNy
(NiFe)100-zOz
(NiFe)100-wNw
Ru
diffusion prevention layer
thin film magnetic head
(CoFe)100-yNy
(NiFe)100-zOz
(NiFe)100-wNw
Ru
diffusion prevention layer