Patent
US 11,942,491 B2LIGHT SENSING UNIT AND GaN-BASED IMAGE SENSOR AND DISPLAY APPARATUS THEREOF
Kai Cheng
ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)·Mar. 26, 2024·US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 11,942,491 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating a sectional structure of a light sensing unit according to a first embodi- ment of the present disclosure.
FIG. 2 is a schematic diagram illustrating a sectional structure of a GaN-based image sensor according to a first embodiment of the present disclosure.
FIG. 3 is a modular structure diagram illustrating a display apparatus according to a second embodiment of the present disclosure.
FIG. 4 is a modular structure diagram illustrating a display apparatus according to a third embodiment of the present disclosure. In order to help understand …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based image sensor, comprising: a substrate, wherein the substrate comprises a light sens-ing processing circuit; 20 a metal interconnection layer, located on a surface of the substrate and internally provided with a metal interconnection structure; and a plurality of light sensing units located on the metal interconnection layer, wherein for each of the plurality of light sensing units, the light sensing unit comprises: a red light sensing sub-unit, a green light sensing sub-unit and a blue light sensing sub-unit; the red light sensing sub-unit, the green light sensing sub-unit, and the blue light sensing sub-unit located on a same layer in a direction perpendicular to a plane where the substrate is located; materials of a red light sensing layer of the red light sensing sub-unit, a green light sensing layer of the green light sensing sub-unit, and a blue light sensing layer of the blue light sensing subunit are all gallium nitride(GaN)-based materials con-taining indium(In); the materials of the red light sens-ing layer, the green light sensing layer and the blue light sensing layer contain different contents of In, enabling the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to generate or not generate light sensing electrical signals in response to different wave lengths of received light; and the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit are electrically connected to the light sensing processing circuit through the metal interconnection structure to obtain a blue light incidence signal, a green light incidence signal and a red light incidence signal; wherein a first forward projection area of the red light sensing sub-unit on the substrate is smaller than a second forward projection area of the green light sens-ing sub-unit on the substrate, and a first component content of In in the material of the red light sensing layer of the red light sensing sub-unit is greater than a 55 second component content of In in the material of the green light sensing layer of the green light sensing sub-unit; wherein the second forward projection area of the green light sensing sub-unit on the substrate is smaller than a third forward projection area of the blue light sensing sub-unit on the substrate, and the second component content of In in the material of the green light sensing layer of the green light sensing sub-unit is greater than a third component content of In in the material of the blue light sensing layer of the blue light sensing subunit.
The GaN-based image sensor of claim 1, wherein, the red light sensing sub-unit comprises: an N type first semiconductor layer, and a P type first semiconductor layer, wherein the N type first semiconductor layer and the P type first semiconductor layer are located at both sides of the red light sensing layer respectively; the green light sensing sub-unit comprises: an N type second semiconductor layer, and a P type second semiconductor layer, wherein the N type second semiconductor layer and the P type second semiconductor layer are located at both sides of the green light sensing layer respectively; the blue light sensing sub-unit comprises: an N type third semiconductor layer, and a P type third semiconductor layer, wherein the N type third semiconductor layer and the P type third semiconductor layer are located at both sides of the blue light sensing layer respectively; wherein (a) the N type first semiconductor layer, the N type second semiconductor layer and the N type third semiconductor layer, or (b) the P type first semicon-ductor layer, the P type second semiconductor layer and the P type third semiconductor layer are connected to the metal interconnection structure to input light sens-ing electrical signals generated by the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to the light sensing processing circuit.
The GaN-based image sensor of claim 1, wherein, the light sensing processing circuit detects light sensing electri-cal signals generated by the light sensing unit; in response to determining that the light sensing process-ing circuit detects the light sensing electrical signals at each of the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit in the light sensing unit, the blue light incidence signal is stored; in response to determining that the light sensing process-ing circuit detects the light sensing electrical signals only at each of the red light sensing sub-unit and the green light sensing sub-unit in the light sensing unit, the green light incidence signal is stored; in response to determining that the light sensing process-ing circuit detects the light sensing electrical signals only at the red light sensing sub-unit in the light sensing unit, the red light incidence signal is stored.
A display apparatus, comprising: a GaN-based image sensor comprising: a substrate, wherein the substrate comprises a light sensing processing circuit; a metal interconnection layer, located on a surface of the substrate and internally provided with a metal interconnection structure; and a plurality of light sensing units located on the metal interconnection layer, wherein for each of the plu-rality of light sensing units, the light sensing unit comprises: a red light sensing sub-unit, a green light sensing sub-unit and a blue light sensing sub-unit; materials of a red light sensing layer of the red light sensing sub-unit, a green light sensing layer of the green light sensing sub-unit, and a blue light sensing layer of the blue light sensing sub-unit are all gallium nitride(GaN)-based materials containing indium(In); the materials of the red light sensing layer, the green light sensing layer and the blue light sensing layer contain different contents of In, enabling the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to generate or not generate light sensing electrical signals in response to different wave lengths of received light; and the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit are electrically connected to the light sensing processing circuit through the metal interconnection structure to obtain a blue light incidence signal, a green light incidence signal and a red light incidence signal; 10 a display drive circuit, wherein an input end of the display drive circuit receives the red light incidence signal, the green light incidence signal and the blue light incidence signal of the light sensing unit in a first region from the light sensing processing circuit, and correspondingly generates a red display drive signal, a green display drive signal and a blue display drive signal; and an output end of the display drive circuit is connected with the metal interconnection structure, and the red display drive signal, the green display drive signal and the blue display drive signal are transmitted to a red light-emitting sub-unit, a green light-emitting sub-unit and a blue light-emitting sub-unit in a second region through the metal interconnection structure; wherein, the red light-emitting sub-unit is the red light sensing sub-unit, the green light-emitting sub-unit is the green light sensing sub-unit and the blue light-emitting sub-unit is the blue light sensing sub-unit.
The display apparatus of claim 4, wherein (a) the first region and the second region are a same region, (b) the first region has a larger area than the second region, or (c) the first region has a smaller area than the second region.
The display apparatus of claim 4, wherein the GaN-based image sensor and the display drive circuit are config-ured to perform a light sensing function and a display function, respectively, in a time-sharing manner such that when the light sensing unit in the first region senses light, the metal interconnection structure is connected with the light sensing processing circuit and disconnected with the display drive circuit; when a light-emitting unit in the second region performs displaying, the metal interconnection structure is disconnected with the light sensing processing circuit and connected with the display drive circuit.
The display apparatus of claim 4, wherein, in response to blue light irradiation, the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit each generate light sensing elec-trical signals; in response to green light irradiation, the red light sensing sub-unit and the green light sensing sub-unit generate the light sensing electrical signals; and in response to red light irradiation, only the red light sensing sub-unit generates at least one of the light sensing electrical signals.
The display apparatus of claim 4, wherein, the red light sensing sub-unit comprises: an N type first semiconductor layer, and a P type first semiconductor layer, wherein the N type first semiconductor layer and the P type first semiconductor layer are located at both sides of the red light sensing layer respectively; the green light sensing sub-unit comprises: an N type second semiconductor layer, and a P type second semiconductor layer, wherein the N type second semiconductor layer and the P type second semiconductor layer are located at both sides of the green light sensing layer respectively; the blue light sensing sub-unit comprises: an N type third semiconductor layer, and a P type third semiconductor layer, wherein the N type third semiconductor layer and the P type third semiconductor layer are located at both sides of the blue light sensing layer respectively.
The display apparatus of claim 4, wherein, the content of In in the red light sensing layer is in a range of 0.4-0.6; the content of In in the green light sensing layer is in a range of 0.2-0.3; the content of In in the blue light sensing layer is in a range of 0.01-0.1.
The display apparatus of claim 4, wherein, the red light sensing sub-unit comprises: an N type first semiconductor layer, and a P type first semiconductor layer, wherein the N type first semiconductor layer and the P type first semiconductor layer are located at both sides of the red light sensing layer respectively; the green light sensing sub-unit comprises: an N type second semiconductor layer, and a P type second semiconductor layer, wherein the N type second semiconductor layer and the P type second semiconductor layer are located at both sides of the green light sensing layer respectively; the blue light sensing sub-unit comprises: an N type third semiconductor layer, and a P type third semiconductor layer, wherein the N type third semiconductor layer and the P type third semiconductor layer are located at both sides of the blue light sensing layer respectively; wherein (a) the N type first semiconductor layer, the N type second semiconductor layer and the N type third semiconductor layer, or (b) the P type first semicon-ductor layer, the P type second semiconductor layer and the P type third semiconductor layer are connected to the metal interconnection structure to input light sens-ing electrical signals generated by the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to the light sensing processing circuit. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based image sensor
GaN-based display apparatus with integrated image sensor
Materials described outside the worked examples.
InGaN red light sensing layer
InGaN
N-type GaN-based semiconductor layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
In content in red light sensing layer (InGaN) | 0.4–0.6 | InGaN |
In content in green light sensing layer (InGaN) | 0.2–0.3 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
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US 11,942,491 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating a sectional structure of a light sensing unit according to a first embodi- ment of the present disclosure.
FIG. 2 is a schematic diagram illustrating a sectional structure of a GaN-based image sensor according to a first embodiment of the present disclosure.
FIG. 3 is a modular structure diagram illustrating a display apparatus according to a second embodiment of the present disclosure.
FIG. 4 is a modular structure diagram illustrating a display apparatus according to a third embodiment of the present disclosure. In order to help understand …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based image sensor, comprising: a substrate, wherein the substrate comprises a light sens-ing processing circuit; 20 a metal interconnection layer, located on a surface of the substrate and internally provided with a metal interconnection structure; and a plurality of light sensing units located on the metal interconnection layer, wherein for each of the plurality of light sensing units, the light sensing unit comprises: a red light sensing sub-unit, a green light sensing sub-unit and a blue light sensing sub-unit; the red light sensing sub-unit, the green light sensing sub-unit, and the blue light sensing sub-unit located on a same layer in a direction perpendicular to a plane where the substrate is located; materials of a red light sensing layer of the red light sensing sub-unit, a green light sensing layer of the green light sensing sub-unit, and a blue light sensing layer of the blue light sensing subunit are all gallium nitride(GaN)-based materials con-taining indium(In); the materials of the red light sens-ing layer, the green light sensing layer and the blue light sensing layer contain different contents of In, enabling the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to generate or not generate light sensing electrical signals in response to different wave lengths of received light; and the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit are electrically connected to the light sensing processing circuit through the metal interconnection structure to obtain a blue light incidence signal, a green light incidence signal and a red light incidence signal; wherein a first forward projection area of the red light sensing sub-unit on the substrate is smaller than a second forward projection area of the green light sens-ing sub-unit on the substrate, and a first component content of In in the material of the red light sensing layer of the red light sensing sub-unit is greater than a 55 second component content of In in the material of the green light sensing layer of the green light sensing sub-unit; wherein the second forward projection area of the green light sensing sub-unit on the substrate is smaller than a third forward projection area of the blue light sensing sub-unit on the substrate, and the second component content of In in the material of the green light sensing layer of the green light sensing sub-unit is greater than a third component content of In in the material of the blue light sensing layer of the blue light sensing subunit.
The GaN-based image sensor of claim 1, wherein, the red light sensing sub-unit comprises: an N type first semiconductor layer, and a P type first semiconductor layer, wherein the N type first semiconductor layer and the P type first semiconductor layer are located at both sides of the red light sensing layer respectively; the green light sensing sub-unit comprises: an N type second semiconductor layer, and a P type second semiconductor layer, wherein the N type second semiconductor layer and the P type second semiconductor layer are located at both sides of the green light sensing layer respectively; the blue light sensing sub-unit comprises: an N type third semiconductor layer, and a P type third semiconductor layer, wherein the N type third semiconductor layer and the P type third semiconductor layer are located at both sides of the blue light sensing layer respectively; wherein (a) the N type first semiconductor layer, the N type second semiconductor layer and the N type third semiconductor layer, or (b) the P type first semicon-ductor layer, the P type second semiconductor layer and the P type third semiconductor layer are connected to the metal interconnection structure to input light sens-ing electrical signals generated by the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to the light sensing processing circuit.
The GaN-based image sensor of claim 1, wherein, the light sensing processing circuit detects light sensing electri-cal signals generated by the light sensing unit; in response to determining that the light sensing process-ing circuit detects the light sensing electrical signals at each of the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit in the light sensing unit, the blue light incidence signal is stored; in response to determining that the light sensing process-ing circuit detects the light sensing electrical signals only at each of the red light sensing sub-unit and the green light sensing sub-unit in the light sensing unit, the green light incidence signal is stored; in response to determining that the light sensing process-ing circuit detects the light sensing electrical signals only at the red light sensing sub-unit in the light sensing unit, the red light incidence signal is stored.
A display apparatus, comprising: a GaN-based image sensor comprising: a substrate, wherein the substrate comprises a light sensing processing circuit; a metal interconnection layer, located on a surface of the substrate and internally provided with a metal interconnection structure; and a plurality of light sensing units located on the metal interconnection layer, wherein for each of the plu-rality of light sensing units, the light sensing unit comprises: a red light sensing sub-unit, a green light sensing sub-unit and a blue light sensing sub-unit; materials of a red light sensing layer of the red light sensing sub-unit, a green light sensing layer of the green light sensing sub-unit, and a blue light sensing layer of the blue light sensing sub-unit are all gallium nitride(GaN)-based materials containing indium(In); the materials of the red light sensing layer, the green light sensing layer and the blue light sensing layer contain different contents of In, enabling the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to generate or not generate light sensing electrical signals in response to different wave lengths of received light; and the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit are electrically connected to the light sensing processing circuit through the metal interconnection structure to obtain a blue light incidence signal, a green light incidence signal and a red light incidence signal; 10 a display drive circuit, wherein an input end of the display drive circuit receives the red light incidence signal, the green light incidence signal and the blue light incidence signal of the light sensing unit in a first region from the light sensing processing circuit, and correspondingly generates a red display drive signal, a green display drive signal and a blue display drive signal; and an output end of the display drive circuit is connected with the metal interconnection structure, and the red display drive signal, the green display drive signal and the blue display drive signal are transmitted to a red light-emitting sub-unit, a green light-emitting sub-unit and a blue light-emitting sub-unit in a second region through the metal interconnection structure; wherein, the red light-emitting sub-unit is the red light sensing sub-unit, the green light-emitting sub-unit is the green light sensing sub-unit and the blue light-emitting sub-unit is the blue light sensing sub-unit.
The display apparatus of claim 4, wherein (a) the first region and the second region are a same region, (b) the first region has a larger area than the second region, or (c) the first region has a smaller area than the second region.
The display apparatus of claim 4, wherein the GaN-based image sensor and the display drive circuit are config-ured to perform a light sensing function and a display function, respectively, in a time-sharing manner such that when the light sensing unit in the first region senses light, the metal interconnection structure is connected with the light sensing processing circuit and disconnected with the display drive circuit; when a light-emitting unit in the second region performs displaying, the metal interconnection structure is disconnected with the light sensing processing circuit and connected with the display drive circuit.
The display apparatus of claim 4, wherein, in response to blue light irradiation, the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit each generate light sensing elec-trical signals; in response to green light irradiation, the red light sensing sub-unit and the green light sensing sub-unit generate the light sensing electrical signals; and in response to red light irradiation, only the red light sensing sub-unit generates at least one of the light sensing electrical signals.
The display apparatus of claim 4, wherein, the red light sensing sub-unit comprises: an N type first semiconductor layer, and a P type first semiconductor layer, wherein the N type first semiconductor layer and the P type first semiconductor layer are located at both sides of the red light sensing layer respectively; the green light sensing sub-unit comprises: an N type second semiconductor layer, and a P type second semiconductor layer, wherein the N type second semiconductor layer and the P type second semiconductor layer are located at both sides of the green light sensing layer respectively; the blue light sensing sub-unit comprises: an N type third semiconductor layer, and a P type third semiconductor layer, wherein the N type third semiconductor layer and the P type third semiconductor layer are located at both sides of the blue light sensing layer respectively.
The display apparatus of claim 4, wherein, the content of In in the red light sensing layer is in a range of 0.4-0.6; the content of In in the green light sensing layer is in a range of 0.2-0.3; the content of In in the blue light sensing layer is in a range of 0.01-0.1.
The display apparatus of claim 4, wherein, the red light sensing sub-unit comprises: an N type first semiconductor layer, and a P type first semiconductor layer, wherein the N type first semiconductor layer and the P type first semiconductor layer are located at both sides of the red light sensing layer respectively; the green light sensing sub-unit comprises: an N type second semiconductor layer, and a P type second semiconductor layer, wherein the N type second semiconductor layer and the P type second semiconductor layer are located at both sides of the green light sensing layer respectively; the blue light sensing sub-unit comprises: an N type third semiconductor layer, and a P type third semiconductor layer, wherein the N type third semiconductor layer and the P type third semiconductor layer are located at both sides of the blue light sensing layer respectively; wherein (a) the N type first semiconductor layer, the N type second semiconductor layer and the N type third semiconductor layer, or (b) the P type first semicon-ductor layer, the P type second semiconductor layer and the P type third semiconductor layer are connected to the metal interconnection structure to input light sens-ing electrical signals generated by the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to the light sensing processing circuit. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based image sensor
GaN-based display apparatus with integrated image sensor
Materials described outside the worked examples.
InGaN red light sensing layer
InGaN
N-type GaN-based semiconductor layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
In content in red light sensing layer (InGaN) | 0.4–0.6 | InGaN |
In content in green light sensing layer (InGaN) | 0.2–0.3 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
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US 11,942,491 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating a sectional structure of a light sensing unit according to a first embodi- ment of the present disclosure.
FIG. 2 is a schematic diagram illustrating a sectional structure of a GaN-based image sensor according to a first embodiment of the present disclosure.
FIG. 3 is a modular structure diagram illustrating a display apparatus according to a second embodiment of the present disclosure.
FIG. 4 is a modular structure diagram illustrating a display apparatus according to a third embodiment of the present disclosure. In order to help understand …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based image sensor, comprising: a substrate, wherein the substrate comprises a light sens-ing processing circuit; 20 a metal interconnection layer, located on a surface of the substrate and internally provided with a metal interconnection structure; and a plurality of light sensing units located on the metal interconnection layer, wherein for each of the plurality of light sensing units, the light sensing unit comprises: a red light sensing sub-unit, a green light sensing sub-unit and a blue light sensing sub-unit; the red light sensing sub-unit, the green light sensing sub-unit, and the blue light sensing sub-unit located on a same layer in a direction perpendicular to a plane where the substrate is located; materials of a red light sensing layer of the red light sensing sub-unit, a green light sensing layer of the green light sensing sub-unit, and a blue light sensing layer of the blue light sensing subunit are all gallium nitride(GaN)-based materials con-taining indium(In); the materials of the red light sens-ing layer, the green light sensing layer and the blue light sensing layer contain different contents of In, enabling the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to generate or not generate light sensing electrical signals in response to different wave lengths of received light; and the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit are electrically connected to the light sensing processing circuit through the metal interconnection structure to obtain a blue light incidence signal, a green light incidence signal and a red light incidence signal; wherein a first forward projection area of the red light sensing sub-unit on the substrate is smaller than a second forward projection area of the green light sens-ing sub-unit on the substrate, and a first component content of In in the material of the red light sensing layer of the red light sensing sub-unit is greater than a 55 second component content of In in the material of the green light sensing layer of the green light sensing sub-unit; wherein the second forward projection area of the green light sensing sub-unit on the substrate is smaller than a third forward projection area of the blue light sensing sub-unit on the substrate, and the second component content of In in the material of the green light sensing layer of the green light sensing sub-unit is greater than a third component content of In in the material of the blue light sensing layer of the blue light sensing subunit.
The GaN-based image sensor of claim 1, wherein, the red light sensing sub-unit comprises: an N type first semiconductor layer, and a P type first semiconductor layer, wherein the N type first semiconductor layer and the P type first semiconductor layer are located at both sides of the red light sensing layer respectively; the green light sensing sub-unit comprises: an N type second semiconductor layer, and a P type second semiconductor layer, wherein the N type second semiconductor layer and the P type second semiconductor layer are located at both sides of the green light sensing layer respectively; the blue light sensing sub-unit comprises: an N type third semiconductor layer, and a P type third semiconductor layer, wherein the N type third semiconductor layer and the P type third semiconductor layer are located at both sides of the blue light sensing layer respectively; wherein (a) the N type first semiconductor layer, the N type second semiconductor layer and the N type third semiconductor layer, or (b) the P type first semicon-ductor layer, the P type second semiconductor layer and the P type third semiconductor layer are connected to the metal interconnection structure to input light sens-ing electrical signals generated by the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to the light sensing processing circuit.
The GaN-based image sensor of claim 1, wherein, the light sensing processing circuit detects light sensing electri-cal signals generated by the light sensing unit; in response to determining that the light sensing process-ing circuit detects the light sensing electrical signals at each of the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit in the light sensing unit, the blue light incidence signal is stored; in response to determining that the light sensing process-ing circuit detects the light sensing electrical signals only at each of the red light sensing sub-unit and the green light sensing sub-unit in the light sensing unit, the green light incidence signal is stored; in response to determining that the light sensing process-ing circuit detects the light sensing electrical signals only at the red light sensing sub-unit in the light sensing unit, the red light incidence signal is stored.
A display apparatus, comprising: a GaN-based image sensor comprising: a substrate, wherein the substrate comprises a light sensing processing circuit; a metal interconnection layer, located on a surface of the substrate and internally provided with a metal interconnection structure; and a plurality of light sensing units located on the metal interconnection layer, wherein for each of the plu-rality of light sensing units, the light sensing unit comprises: a red light sensing sub-unit, a green light sensing sub-unit and a blue light sensing sub-unit; materials of a red light sensing layer of the red light sensing sub-unit, a green light sensing layer of the green light sensing sub-unit, and a blue light sensing layer of the blue light sensing sub-unit are all gallium nitride(GaN)-based materials containing indium(In); the materials of the red light sensing layer, the green light sensing layer and the blue light sensing layer contain different contents of In, enabling the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to generate or not generate light sensing electrical signals in response to different wave lengths of received light; and the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit are electrically connected to the light sensing processing circuit through the metal interconnection structure to obtain a blue light incidence signal, a green light incidence signal and a red light incidence signal; 10 a display drive circuit, wherein an input end of the display drive circuit receives the red light incidence signal, the green light incidence signal and the blue light incidence signal of the light sensing unit in a first region from the light sensing processing circuit, and correspondingly generates a red display drive signal, a green display drive signal and a blue display drive signal; and an output end of the display drive circuit is connected with the metal interconnection structure, and the red display drive signal, the green display drive signal and the blue display drive signal are transmitted to a red light-emitting sub-unit, a green light-emitting sub-unit and a blue light-emitting sub-unit in a second region through the metal interconnection structure; wherein, the red light-emitting sub-unit is the red light sensing sub-unit, the green light-emitting sub-unit is the green light sensing sub-unit and the blue light-emitting sub-unit is the blue light sensing sub-unit.
The display apparatus of claim 4, wherein (a) the first region and the second region are a same region, (b) the first region has a larger area than the second region, or (c) the first region has a smaller area than the second region.
The display apparatus of claim 4, wherein the GaN-based image sensor and the display drive circuit are config-ured to perform a light sensing function and a display function, respectively, in a time-sharing manner such that when the light sensing unit in the first region senses light, the metal interconnection structure is connected with the light sensing processing circuit and disconnected with the display drive circuit; when a light-emitting unit in the second region performs displaying, the metal interconnection structure is disconnected with the light sensing processing circuit and connected with the display drive circuit.
The display apparatus of claim 4, wherein, in response to blue light irradiation, the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit each generate light sensing elec-trical signals; in response to green light irradiation, the red light sensing sub-unit and the green light sensing sub-unit generate the light sensing electrical signals; and in response to red light irradiation, only the red light sensing sub-unit generates at least one of the light sensing electrical signals.
The display apparatus of claim 4, wherein, the red light sensing sub-unit comprises: an N type first semiconductor layer, and a P type first semiconductor layer, wherein the N type first semiconductor layer and the P type first semiconductor layer are located at both sides of the red light sensing layer respectively; the green light sensing sub-unit comprises: an N type second semiconductor layer, and a P type second semiconductor layer, wherein the N type second semiconductor layer and the P type second semiconductor layer are located at both sides of the green light sensing layer respectively; the blue light sensing sub-unit comprises: an N type third semiconductor layer, and a P type third semiconductor layer, wherein the N type third semiconductor layer and the P type third semiconductor layer are located at both sides of the blue light sensing layer respectively.
The display apparatus of claim 4, wherein, the content of In in the red light sensing layer is in a range of 0.4-0.6; the content of In in the green light sensing layer is in a range of 0.2-0.3; the content of In in the blue light sensing layer is in a range of 0.01-0.1.
The display apparatus of claim 4, wherein, the red light sensing sub-unit comprises: an N type first semiconductor layer, and a P type first semiconductor layer, wherein the N type first semiconductor layer and the P type first semiconductor layer are located at both sides of the red light sensing layer respectively; the green light sensing sub-unit comprises: an N type second semiconductor layer, and a P type second semiconductor layer, wherein the N type second semiconductor layer and the P type second semiconductor layer are located at both sides of the green light sensing layer respectively; the blue light sensing sub-unit comprises: an N type third semiconductor layer, and a P type third semiconductor layer, wherein the N type third semiconductor layer and the P type third semiconductor layer are located at both sides of the blue light sensing layer respectively; wherein (a) the N type first semiconductor layer, the N type second semiconductor layer and the N type third semiconductor layer, or (b) the P type first semicon-ductor layer, the P type second semiconductor layer and the P type third semiconductor layer are connected to the metal interconnection structure to input light sens-ing electrical signals generated by the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to the light sensing processing circuit. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based image sensor
GaN-based display apparatus with integrated image sensor
Materials described outside the worked examples.
InGaN red light sensing layer
InGaN
N-type GaN-based semiconductor layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
In content in red light sensing layer (InGaN) | 0.4–0.6 | InGaN |
In content in green light sensing layer (InGaN) | 0.2–0.3 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 11,942,491 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating a sectional structure of a light sensing unit according to a first embodi- ment of the present disclosure.
FIG. 2 is a schematic diagram illustrating a sectional structure of a GaN-based image sensor according to a first embodiment of the present disclosure.
FIG. 3 is a modular structure diagram illustrating a display apparatus according to a second embodiment of the present disclosure.
FIG. 4 is a modular structure diagram illustrating a display apparatus according to a third embodiment of the present disclosure. In order to help understand …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based image sensor, comprising: a substrate, wherein the substrate comprises a light sens-ing processing circuit; 20 a metal interconnection layer, located on a surface of the substrate and internally provided with a metal interconnection structure; and a plurality of light sensing units located on the metal interconnection layer, wherein for each of the plurality of light sensing units, the light sensing unit comprises: a red light sensing sub-unit, a green light sensing sub-unit and a blue light sensing sub-unit; the red light sensing sub-unit, the green light sensing sub-unit, and the blue light sensing sub-unit located on a same layer in a direction perpendicular to a plane where the substrate is located; materials of a red light sensing layer of the red light sensing sub-unit, a green light sensing layer of the green light sensing sub-unit, and a blue light sensing layer of the blue light sensing subunit are all gallium nitride(GaN)-based materials con-taining indium(In); the materials of the red light sens-ing layer, the green light sensing layer and the blue light sensing layer contain different contents of In, enabling the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to generate or not generate light sensing electrical signals in response to different wave lengths of received light; and the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit are electrically connected to the light sensing processing circuit through the metal interconnection structure to obtain a blue light incidence signal, a green light incidence signal and a red light incidence signal; wherein a first forward projection area of the red light sensing sub-unit on the substrate is smaller than a second forward projection area of the green light sens-ing sub-unit on the substrate, and a first component content of In in the material of the red light sensing layer of the red light sensing sub-unit is greater than a 55 second component content of In in the material of the green light sensing layer of the green light sensing sub-unit; wherein the second forward projection area of the green light sensing sub-unit on the substrate is smaller than a third forward projection area of the blue light sensing sub-unit on the substrate, and the second component content of In in the material of the green light sensing layer of the green light sensing sub-unit is greater than a third component content of In in the material of the blue light sensing layer of the blue light sensing subunit.
The GaN-based image sensor of claim 1, wherein, the red light sensing sub-unit comprises: an N type first semiconductor layer, and a P type first semiconductor layer, wherein the N type first semiconductor layer and the P type first semiconductor layer are located at both sides of the red light sensing layer respectively; the green light sensing sub-unit comprises: an N type second semiconductor layer, and a P type second semiconductor layer, wherein the N type second semiconductor layer and the P type second semiconductor layer are located at both sides of the green light sensing layer respectively; the blue light sensing sub-unit comprises: an N type third semiconductor layer, and a P type third semiconductor layer, wherein the N type third semiconductor layer and the P type third semiconductor layer are located at both sides of the blue light sensing layer respectively; wherein (a) the N type first semiconductor layer, the N type second semiconductor layer and the N type third semiconductor layer, or (b) the P type first semicon-ductor layer, the P type second semiconductor layer and the P type third semiconductor layer are connected to the metal interconnection structure to input light sens-ing electrical signals generated by the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to the light sensing processing circuit.
The GaN-based image sensor of claim 1, wherein, the light sensing processing circuit detects light sensing electri-cal signals generated by the light sensing unit; in response to determining that the light sensing process-ing circuit detects the light sensing electrical signals at each of the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit in the light sensing unit, the blue light incidence signal is stored; in response to determining that the light sensing process-ing circuit detects the light sensing electrical signals only at each of the red light sensing sub-unit and the green light sensing sub-unit in the light sensing unit, the green light incidence signal is stored; in response to determining that the light sensing process-ing circuit detects the light sensing electrical signals only at the red light sensing sub-unit in the light sensing unit, the red light incidence signal is stored.
A display apparatus, comprising: a GaN-based image sensor comprising: a substrate, wherein the substrate comprises a light sensing processing circuit; a metal interconnection layer, located on a surface of the substrate and internally provided with a metal interconnection structure; and a plurality of light sensing units located on the metal interconnection layer, wherein for each of the plu-rality of light sensing units, the light sensing unit comprises: a red light sensing sub-unit, a green light sensing sub-unit and a blue light sensing sub-unit; materials of a red light sensing layer of the red light sensing sub-unit, a green light sensing layer of the green light sensing sub-unit, and a blue light sensing layer of the blue light sensing sub-unit are all gallium nitride(GaN)-based materials containing indium(In); the materials of the red light sensing layer, the green light sensing layer and the blue light sensing layer contain different contents of In, enabling the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to generate or not generate light sensing electrical signals in response to different wave lengths of received light; and the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit are electrically connected to the light sensing processing circuit through the metal interconnection structure to obtain a blue light incidence signal, a green light incidence signal and a red light incidence signal; 10 a display drive circuit, wherein an input end of the display drive circuit receives the red light incidence signal, the green light incidence signal and the blue light incidence signal of the light sensing unit in a first region from the light sensing processing circuit, and correspondingly generates a red display drive signal, a green display drive signal and a blue display drive signal; and an output end of the display drive circuit is connected with the metal interconnection structure, and the red display drive signal, the green display drive signal and the blue display drive signal are transmitted to a red light-emitting sub-unit, a green light-emitting sub-unit and a blue light-emitting sub-unit in a second region through the metal interconnection structure; wherein, the red light-emitting sub-unit is the red light sensing sub-unit, the green light-emitting sub-unit is the green light sensing sub-unit and the blue light-emitting sub-unit is the blue light sensing sub-unit.
The display apparatus of claim 4, wherein (a) the first region and the second region are a same region, (b) the first region has a larger area than the second region, or (c) the first region has a smaller area than the second region.
The display apparatus of claim 4, wherein the GaN-based image sensor and the display drive circuit are config-ured to perform a light sensing function and a display function, respectively, in a time-sharing manner such that when the light sensing unit in the first region senses light, the metal interconnection structure is connected with the light sensing processing circuit and disconnected with the display drive circuit; when a light-emitting unit in the second region performs displaying, the metal interconnection structure is disconnected with the light sensing processing circuit and connected with the display drive circuit.
The display apparatus of claim 4, wherein, in response to blue light irradiation, the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit each generate light sensing elec-trical signals; in response to green light irradiation, the red light sensing sub-unit and the green light sensing sub-unit generate the light sensing electrical signals; and in response to red light irradiation, only the red light sensing sub-unit generates at least one of the light sensing electrical signals.
The display apparatus of claim 4, wherein, the red light sensing sub-unit comprises: an N type first semiconductor layer, and a P type first semiconductor layer, wherein the N type first semiconductor layer and the P type first semiconductor layer are located at both sides of the red light sensing layer respectively; the green light sensing sub-unit comprises: an N type second semiconductor layer, and a P type second semiconductor layer, wherein the N type second semiconductor layer and the P type second semiconductor layer are located at both sides of the green light sensing layer respectively; the blue light sensing sub-unit comprises: an N type third semiconductor layer, and a P type third semiconductor layer, wherein the N type third semiconductor layer and the P type third semiconductor layer are located at both sides of the blue light sensing layer respectively.
The display apparatus of claim 4, wherein, the content of In in the red light sensing layer is in a range of 0.4-0.6; the content of In in the green light sensing layer is in a range of 0.2-0.3; the content of In in the blue light sensing layer is in a range of 0.01-0.1.
The display apparatus of claim 4, wherein, the red light sensing sub-unit comprises: an N type first semiconductor layer, and a P type first semiconductor layer, wherein the N type first semiconductor layer and the P type first semiconductor layer are located at both sides of the red light sensing layer respectively; the green light sensing sub-unit comprises: an N type second semiconductor layer, and a P type second semiconductor layer, wherein the N type second semiconductor layer and the P type second semiconductor layer are located at both sides of the green light sensing layer respectively; the blue light sensing sub-unit comprises: an N type third semiconductor layer, and a P type third semiconductor layer, wherein the N type third semiconductor layer and the P type third semiconductor layer are located at both sides of the blue light sensing layer respectively; wherein (a) the N type first semiconductor layer, the N type second semiconductor layer and the N type third semiconductor layer, or (b) the P type first semicon-ductor layer, the P type second semiconductor layer and the P type third semiconductor layer are connected to the metal interconnection structure to input light sens-ing electrical signals generated by the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to the light sensing processing circuit. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based image sensor
GaN-based display apparatus with integrated image sensor
Materials described outside the worked examples.
InGaN red light sensing layer
InGaN
N-type GaN-based semiconductor layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
In content in red light sensing layer (InGaN) | 0.4–0.6 | InGaN |
In content in green light sensing layer (InGaN) | 0.2–0.3 |
Patents and literature cited by this patent (applicant and examiner references).
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