Patent
US 9,379,060GRAPHENE WIRING
Hisao MIYAZAKI
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,379,060Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1 -11 canceled
A graphene wiring, comprising: a substrate; a catalyst layer on the substrate; a stack of graphene layer layers on the catalyst layer; and a first dopant layer layers on a first side surface of the stack of graphene layer layers; and a second dopant layer on a second side surface of the stack of graphene layer layers, wherein an atomic or molecular species is intercalated in the graphene layer, a bottom side of the stack of graphene layer layers is on the catalyst layer, the first dopant layers layer and the second dopant layer include the atomic or molecular species, the bottom side of the stack of graphene layer layers is in physical contact with the catalyst layer[[, and] SVG 14202162.01-29-2016.IK06UNX₁PXXIFW3.CLM.1.19.734.2155.762.2197.svg 0.14 0.093 Chemistry Black and white the dopant layers are in physical contact with the first side surface of the graphene layer and the second side surf a ce of the graphene layer, each graphene layer of the stack of graphene layers is parallel to the catalyst layer, a surface of the first dopant la y er is in physical contact with each edge of the stack of graphene layers at the first side, and a surface of the second dopant la y er is in physical contact with each edge of the stack of graphene layers at the second side. 2 Application No. 14/202,162 Reply to Office Action of
The wiring according to claim 12, wherein a width of the stack of graphene layer layers is in a range of 3 nm to 30 nm, and the width of the stack of graphene layer layers is a distance between the first side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers.
The wiring according to claim 12, wherein the atomic or molecular species is at least one selected from the group consisting of Co, Ni, Fe, Ru, Cu, Na, Li, K, Sc, Y, La, Zr, Hf, Ir, and Pt.
The wiring according to claim 12, wherein the stack of graphene layer layers is multiple layers of graphene sheets including at most 100 layers.
The wiring according to claim 12, wherein a thickness of the first dopant layers layer of the second dopant layer is in a range of 0.1 nm to 10 nm.
The wiring according to claim 12, wherein the first side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers are parallel to a lamination direction of the graphene.
The wiring according to claim 12, wherein the first side surface of the stack of graphene layer layers is opposite to the second side surface of the stack of graphene layer layers. 3 Application No. 14/202,162 Reply to Office Action of
The wiring according to claim 12, wherein the fi rst side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers face a surface that extends in a longitudinal direction of the wiring.
The wiring according to claim 12, wherein the stack of graphene layer layers is sandwiched in between the fi rst side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers.
The wiring according to claim 12, wherein a width of the stack of graphene layer layers is in a range of 3 nm to 100 nm, and the width of the stack of graphene layer layers is a distance between the first side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers.
The wiring according to claim 12, wherein an entirety of the bottom side of the stack of graphene layer layers is in physical contact with the catalyst layer.
The wiring according to claim 12, wherein 4 Application No. 14/202,162 Reply to Office Action of the surface of the first dopant layer which is in physical contact with each edge of the stack of graphene layers at the first side is vertical to a surface of the bottom side of the stack of graphene layers, and the surface of the second dopant layer which is in physical contact with each edge of the stack of graphene layers at the second side is vertical to the surface of the bottom side of the stack of graphene layers.
The wiring according to claim 12, wherein the surface of the first dopant layer which is in physical contact with an entirety of each edge of the stack of graphene layers at the first side is vertical to a surface of the bottom side of the stack of graphene layers, and the surface of the second dopant layer which is in physical contact with an entirety of each edge of the stack of graphene layers at the second side is vertical to the surface of the bottom side of the stack of graphene layers.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene wiring
Materials described outside the worked examples.
graphene layer (stack)
first dopant layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
volume resistivity of graphene wiring (embodiment, ~10 nm width, with dopant) | 25 μΩ·cm | graphene layer (stack) |
Thickness | 0.5–10 nm |
Patent
Atlas literature
Patent
US 9,379,060Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1 -11 canceled
A graphene wiring, comprising: a substrate; a catalyst layer on the substrate; a stack of graphene layer layers on the catalyst layer; and a first dopant layer layers on a first side surface of the stack of graphene layer layers; and a second dopant layer on a second side surface of the stack of graphene layer layers, wherein an atomic or molecular species is intercalated in the graphene layer, a bottom side of the stack of graphene layer layers is on the catalyst layer, the first dopant layers layer and the second dopant layer include the atomic or molecular species, the bottom side of the stack of graphene layer layers is in physical contact with the catalyst layer[[, and] SVG 14202162.01-29-2016.IK06UNX₁PXXIFW3.CLM.1.19.734.2155.762.2197.svg 0.14 0.093 Chemistry Black and white the dopant layers are in physical contact with the first side surface of the graphene layer and the second side surf a ce of the graphene layer, each graphene layer of the stack of graphene layers is parallel to the catalyst layer, a surface of the first dopant la y er is in physical contact with each edge of the stack of graphene layers at the first side, and a surface of the second dopant la y er is in physical contact with each edge of the stack of graphene layers at the second side. 2 Application No. 14/202,162 Reply to Office Action of
The wiring according to claim 12, wherein a width of the stack of graphene layer layers is in a range of 3 nm to 30 nm, and the width of the stack of graphene layer layers is a distance between the first side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers.
The wiring according to claim 12, wherein the atomic or molecular species is at least one selected from the group consisting of Co, Ni, Fe, Ru, Cu, Na, Li, K, Sc, Y, La, Zr, Hf, Ir, and Pt.
The wiring according to claim 12, wherein the stack of graphene layer layers is multiple layers of graphene sheets including at most 100 layers.
The wiring according to claim 12, wherein a thickness of the first dopant layers layer of the second dopant layer is in a range of 0.1 nm to 10 nm.
The wiring according to claim 12, wherein the first side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers are parallel to a lamination direction of the graphene.
The wiring according to claim 12, wherein the first side surface of the stack of graphene layer layers is opposite to the second side surface of the stack of graphene layer layers. 3 Application No. 14/202,162 Reply to Office Action of
The wiring according to claim 12, wherein the fi rst side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers face a surface that extends in a longitudinal direction of the wiring.
The wiring according to claim 12, wherein the stack of graphene layer layers is sandwiched in between the fi rst side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers.
The wiring according to claim 12, wherein a width of the stack of graphene layer layers is in a range of 3 nm to 100 nm, and the width of the stack of graphene layer layers is a distance between the first side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers.
The wiring according to claim 12, wherein an entirety of the bottom side of the stack of graphene layer layers is in physical contact with the catalyst layer.
The wiring according to claim 12, wherein 4 Application No. 14/202,162 Reply to Office Action of the surface of the first dopant layer which is in physical contact with each edge of the stack of graphene layers at the first side is vertical to a surface of the bottom side of the stack of graphene layers, and the surface of the second dopant layer which is in physical contact with each edge of the stack of graphene layers at the second side is vertical to the surface of the bottom side of the stack of graphene layers.
The wiring according to claim 12, wherein the surface of the first dopant layer which is in physical contact with an entirety of each edge of the stack of graphene layers at the first side is vertical to a surface of the bottom side of the stack of graphene layers, and the surface of the second dopant layer which is in physical contact with an entirety of each edge of the stack of graphene layers at the second side is vertical to the surface of the bottom side of the stack of graphene layers.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene wiring
Materials described outside the worked examples.
graphene layer (stack)
first dopant layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
volume resistivity of graphene wiring (embodiment, ~10 nm width, with dopant) | 25 μΩ·cm | graphene layer (stack) |
Thickness | 0.5–10 nm |
Patent
Atlas literature
Patent
US 9,379,060Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1 -11 canceled
A graphene wiring, comprising: a substrate; a catalyst layer on the substrate; a stack of graphene layer layers on the catalyst layer; and a first dopant layer layers on a first side surface of the stack of graphene layer layers; and a second dopant layer on a second side surface of the stack of graphene layer layers, wherein an atomic or molecular species is intercalated in the graphene layer, a bottom side of the stack of graphene layer layers is on the catalyst layer, the first dopant layers layer and the second dopant layer include the atomic or molecular species, the bottom side of the stack of graphene layer layers is in physical contact with the catalyst layer[[, and] SVG 14202162.01-29-2016.IK06UNX₁PXXIFW3.CLM.1.19.734.2155.762.2197.svg 0.14 0.093 Chemistry Black and white the dopant layers are in physical contact with the first side surface of the graphene layer and the second side surf a ce of the graphene layer, each graphene layer of the stack of graphene layers is parallel to the catalyst layer, a surface of the first dopant la y er is in physical contact with each edge of the stack of graphene layers at the first side, and a surface of the second dopant la y er is in physical contact with each edge of the stack of graphene layers at the second side. 2 Application No. 14/202,162 Reply to Office Action of
The wiring according to claim 12, wherein a width of the stack of graphene layer layers is in a range of 3 nm to 30 nm, and the width of the stack of graphene layer layers is a distance between the first side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers.
The wiring according to claim 12, wherein the atomic or molecular species is at least one selected from the group consisting of Co, Ni, Fe, Ru, Cu, Na, Li, K, Sc, Y, La, Zr, Hf, Ir, and Pt.
The wiring according to claim 12, wherein the stack of graphene layer layers is multiple layers of graphene sheets including at most 100 layers.
The wiring according to claim 12, wherein a thickness of the first dopant layers layer of the second dopant layer is in a range of 0.1 nm to 10 nm.
The wiring according to claim 12, wherein the first side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers are parallel to a lamination direction of the graphene.
The wiring according to claim 12, wherein the first side surface of the stack of graphene layer layers is opposite to the second side surface of the stack of graphene layer layers. 3 Application No. 14/202,162 Reply to Office Action of
The wiring according to claim 12, wherein the fi rst side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers face a surface that extends in a longitudinal direction of the wiring.
The wiring according to claim 12, wherein the stack of graphene layer layers is sandwiched in between the fi rst side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers.
The wiring according to claim 12, wherein a width of the stack of graphene layer layers is in a range of 3 nm to 100 nm, and the width of the stack of graphene layer layers is a distance between the first side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers.
The wiring according to claim 12, wherein an entirety of the bottom side of the stack of graphene layer layers is in physical contact with the catalyst layer.
The wiring according to claim 12, wherein 4 Application No. 14/202,162 Reply to Office Action of the surface of the first dopant layer which is in physical contact with each edge of the stack of graphene layers at the first side is vertical to a surface of the bottom side of the stack of graphene layers, and the surface of the second dopant layer which is in physical contact with each edge of the stack of graphene layers at the second side is vertical to the surface of the bottom side of the stack of graphene layers.
The wiring according to claim 12, wherein the surface of the first dopant layer which is in physical contact with an entirety of each edge of the stack of graphene layers at the first side is vertical to a surface of the bottom side of the stack of graphene layers, and the surface of the second dopant layer which is in physical contact with an entirety of each edge of the stack of graphene layers at the second side is vertical to the surface of the bottom side of the stack of graphene layers.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene wiring
Materials described outside the worked examples.
graphene layer (stack)
first dopant layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
volume resistivity of graphene wiring (embodiment, ~10 nm width, with dopant) | 25 μΩ·cm | graphene layer (stack) |
Thickness | 0.5–10 nm |
Patent
Atlas literature
Patent
US 9,379,060Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1 -11 canceled
A graphene wiring, comprising: a substrate; a catalyst layer on the substrate; a stack of graphene layer layers on the catalyst layer; and a first dopant layer layers on a first side surface of the stack of graphene layer layers; and a second dopant layer on a second side surface of the stack of graphene layer layers, wherein an atomic or molecular species is intercalated in the graphene layer, a bottom side of the stack of graphene layer layers is on the catalyst layer, the first dopant layers layer and the second dopant layer include the atomic or molecular species, the bottom side of the stack of graphene layer layers is in physical contact with the catalyst layer[[, and] SVG 14202162.01-29-2016.IK06UNX₁PXXIFW3.CLM.1.19.734.2155.762.2197.svg 0.14 0.093 Chemistry Black and white the dopant layers are in physical contact with the first side surface of the graphene layer and the second side surf a ce of the graphene layer, each graphene layer of the stack of graphene layers is parallel to the catalyst layer, a surface of the first dopant la y er is in physical contact with each edge of the stack of graphene layers at the first side, and a surface of the second dopant la y er is in physical contact with each edge of the stack of graphene layers at the second side. 2 Application No. 14/202,162 Reply to Office Action of
The wiring according to claim 12, wherein a width of the stack of graphene layer layers is in a range of 3 nm to 30 nm, and the width of the stack of graphene layer layers is a distance between the first side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers.
The wiring according to claim 12, wherein the atomic or molecular species is at least one selected from the group consisting of Co, Ni, Fe, Ru, Cu, Na, Li, K, Sc, Y, La, Zr, Hf, Ir, and Pt.
The wiring according to claim 12, wherein the stack of graphene layer layers is multiple layers of graphene sheets including at most 100 layers.
The wiring according to claim 12, wherein a thickness of the first dopant layers layer of the second dopant layer is in a range of 0.1 nm to 10 nm.
The wiring according to claim 12, wherein the first side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers are parallel to a lamination direction of the graphene.
The wiring according to claim 12, wherein the first side surface of the stack of graphene layer layers is opposite to the second side surface of the stack of graphene layer layers. 3 Application No. 14/202,162 Reply to Office Action of
The wiring according to claim 12, wherein the fi rst side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers face a surface that extends in a longitudinal direction of the wiring.
The wiring according to claim 12, wherein the stack of graphene layer layers is sandwiched in between the fi rst side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers.
The wiring according to claim 12, wherein a width of the stack of graphene layer layers is in a range of 3 nm to 100 nm, and the width of the stack of graphene layer layers is a distance between the first side surface of the stack of graphene layer layers and the second side surface of the stack of graphene layer layers.
The wiring according to claim 12, wherein an entirety of the bottom side of the stack of graphene layer layers is in physical contact with the catalyst layer.
The wiring according to claim 12, wherein 4 Application No. 14/202,162 Reply to Office Action of the surface of the first dopant layer which is in physical contact with each edge of the stack of graphene layers at the first side is vertical to a surface of the bottom side of the stack of graphene layers, and the surface of the second dopant layer which is in physical contact with each edge of the stack of graphene layers at the second side is vertical to the surface of the bottom side of the stack of graphene layers.
The wiring according to claim 12, wherein the surface of the first dopant layer which is in physical contact with an entirety of each edge of the stack of graphene layers at the first side is vertical to a surface of the bottom side of the stack of graphene layers, and the surface of the second dopant layer which is in physical contact with an entirety of each edge of the stack of graphene layers at the second side is vertical to the surface of the bottom side of the stack of graphene layers.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene wiring
Materials described outside the worked examples.
graphene layer (stack)
first dopant layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
volume resistivity of graphene wiring (embodiment, ~10 nm width, with dopant) | 25 μΩ·cm | graphene layer (stack) |
Thickness | 0.5–10 nm |
second dopant layer
atomic or molecular dopant species
catalyst layer
catalyst backing layer
Co, Ni, Fe, Ru, Cu (catalyst metals)
N2, B, O2, F2, Cl2, Br2, I2, Co, Ni, Fe, Ru, Cu, Na, Li, K, Sc, Y, La, Zr, Hf, Ir, Pt (dopant species)
nitride or oxide of Ti, Ta, Ru, or W (catalyst backing layer material)
| — |
Thickness | 5–20 nm | — |
Thickness | 3–100 nm | — |
Thickness | 3–30 nm | — |
Thickness | 0.1–10 nm | — |
Duration | 30–300 seconds | — |
Temperature | 200–400 °C | — |
Temperature | 300–700 °C | — |
second dopant layer
atomic or molecular dopant species
catalyst layer
catalyst backing layer
Co, Ni, Fe, Ru, Cu (catalyst metals)
N2, B, O2, F2, Cl2, Br2, I2, Co, Ni, Fe, Ru, Cu, Na, Li, K, Sc, Y, La, Zr, Hf, Ir, Pt (dopant species)
nitride or oxide of Ti, Ta, Ru, or W (catalyst backing layer material)
| — |
Thickness | 5–20 nm | — |
Thickness | 3–100 nm | — |
Thickness | 3–30 nm | — |
Thickness | 0.1–10 nm | — |
Duration | 30–300 seconds | — |
Temperature | 200–400 °C | — |
Temperature | 300–700 °C | — |
second dopant layer
atomic or molecular dopant species
catalyst layer
catalyst backing layer
Co, Ni, Fe, Ru, Cu (catalyst metals)
N2, B, O2, F2, Cl2, Br2, I2, Co, Ni, Fe, Ru, Cu, Na, Li, K, Sc, Y, La, Zr, Hf, Ir, Pt (dopant species)
nitride or oxide of Ti, Ta, Ru, or W (catalyst backing layer material)
| — |
Thickness | 5–20 nm | — |
Thickness | 3–100 nm | — |
Thickness | 3–30 nm | — |
Thickness | 0.1–10 nm | — |
Duration | 30–300 seconds | — |
Temperature | 200–400 °C | — |
Temperature | 300–700 °C | — |
second dopant layer
atomic or molecular dopant species
catalyst layer
catalyst backing layer
Co, Ni, Fe, Ru, Cu (catalyst metals)
N2, B, O2, F2, Cl2, Br2, I2, Co, Ni, Fe, Ru, Cu, Na, Li, K, Sc, Y, La, Zr, Hf, Ir, Pt (dopant species)
nitride or oxide of Ti, Ta, Ru, or W (catalyst backing layer material)
| — |
Thickness | 5–20 nm | — |
Thickness | 3–100 nm | — |
Thickness | 3–30 nm | — |
Thickness | 0.1–10 nm | — |
Duration | 30–300 seconds | — |
Temperature | 200–400 °C | — |
Temperature | 300–700 °C | — |