Patent
US 8,742,400GRAPHENE SWITCHING DEVICE INCLUDING TUNABLE BARRIER
David SEO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,742,400Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a graphene switching device having a tunable barrier according to example embodiments; [0021]
FIGS. 2A through 2D are energy band diagrams for explaining an operation of the graphene switching device of
FIG. 3 is an I -V characteristic curve of an n-type graphene switching device according to example embodiments; 5 Atty. Dkt. No. 2557 S₁ -001887/US [0023]
FIG. 4 is an I -V characteristic curve of a p-type graphene switching device according to example embodiments; [0024]
FIG. 5 is a graph showing an operation of metal particles in a graphene switching device according to example embodiments; [0025]
FIG. 6 is a schematic cross-sectional view of a graphene switching device having a tunable barrier according to example embodiments; and [0026]
FIG. 7 is a schematic cross-sectional view of a graphene switching device having a tunable barrier according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Atty. Dkt. No. 2557S 1 -001887/US WHAT IS CLAIMED IS:
The graphene switching device of claim 1, further comprising: a plurality of grooves on the semiconductor substrate, the plurality of grooves configured to correspond to the plurality of metal particles; and an insulating material configured to fill the plurality of grooves.
The graphene switching device of claim 1, wherein the semiconductor substrate is formed of a material including one of silicon, germanium, silicon- germanium, a Group I ll -V semiconductor, a Group I I -VI semiconductor, and MoS2. 23 Atty. Dkt. No. 2557S 1 -001887/US
The graphene switching device of claim 1, wherein the first electrode is separate from the graphene layer by a gap.
The graphene switching device of claim 1, wherein the first and second electrodes are formed of one of metal and polysilicon.
The graphene switching device of claim 1, wherein the graphene switching device is a unipolar transistor having a same polarity as that of a dopant of the semiconductor substrate.
The graphene switching device of claim 1, wherein the energy barrier changes according to a gate voltage applied to the gate electrode.
The graphene switching device of claim 1, wherein the graphene layer includes one to four graphene layers. 24
Layer stacks claimed or described, ordered top of device to substrate.
graphene switching device with tunable barrier
Materials described outside the worked examples.
graphene
metal particles
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a graph showing an operation of metal particles in a graphene switching device according to example embodiments; [0025]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
organic film thickness | 1–3 nm | organic film |
metal particle size | 1–10 nm |
Patent
Atlas literature
Patent
US 8,742,400Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a graphene switching device having a tunable barrier according to example embodiments; [0021]
FIGS. 2A through 2D are energy band diagrams for explaining an operation of the graphene switching device of
FIG. 3 is an I -V characteristic curve of an n-type graphene switching device according to example embodiments; 5 Atty. Dkt. No. 2557 S₁ -001887/US [0023]
FIG. 4 is an I -V characteristic curve of a p-type graphene switching device according to example embodiments; [0024]
FIG. 5 is a graph showing an operation of metal particles in a graphene switching device according to example embodiments; [0025]
FIG. 6 is a schematic cross-sectional view of a graphene switching device having a tunable barrier according to example embodiments; and [0026]
FIG. 7 is a schematic cross-sectional view of a graphene switching device having a tunable barrier according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Atty. Dkt. No. 2557S 1 -001887/US WHAT IS CLAIMED IS:
The graphene switching device of claim 1, further comprising: a plurality of grooves on the semiconductor substrate, the plurality of grooves configured to correspond to the plurality of metal particles; and an insulating material configured to fill the plurality of grooves.
The graphene switching device of claim 1, wherein the semiconductor substrate is formed of a material including one of silicon, germanium, silicon- germanium, a Group I ll -V semiconductor, a Group I I -VI semiconductor, and MoS2. 23 Atty. Dkt. No. 2557S 1 -001887/US
The graphene switching device of claim 1, wherein the first electrode is separate from the graphene layer by a gap.
The graphene switching device of claim 1, wherein the first and second electrodes are formed of one of metal and polysilicon.
The graphene switching device of claim 1, wherein the graphene switching device is a unipolar transistor having a same polarity as that of a dopant of the semiconductor substrate.
The graphene switching device of claim 1, wherein the energy barrier changes according to a gate voltage applied to the gate electrode.
The graphene switching device of claim 1, wherein the graphene layer includes one to four graphene layers. 24
Layer stacks claimed or described, ordered top of device to substrate.
graphene switching device with tunable barrier
Materials described outside the worked examples.
graphene
metal particles
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a graph showing an operation of metal particles in a graphene switching device according to example embodiments; [0025]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
organic film thickness | 1–3 nm | organic film |
metal particle size | 1–10 nm |
Patent
Atlas literature
Patent
US 8,742,400Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a graphene switching device having a tunable barrier according to example embodiments; [0021]
FIGS. 2A through 2D are energy band diagrams for explaining an operation of the graphene switching device of
FIG. 3 is an I -V characteristic curve of an n-type graphene switching device according to example embodiments; 5 Atty. Dkt. No. 2557 S₁ -001887/US [0023]
FIG. 4 is an I -V characteristic curve of a p-type graphene switching device according to example embodiments; [0024]
FIG. 5 is a graph showing an operation of metal particles in a graphene switching device according to example embodiments; [0025]
FIG. 6 is a schematic cross-sectional view of a graphene switching device having a tunable barrier according to example embodiments; and [0026]
FIG. 7 is a schematic cross-sectional view of a graphene switching device having a tunable barrier according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Atty. Dkt. No. 2557S 1 -001887/US WHAT IS CLAIMED IS:
The graphene switching device of claim 1, further comprising: a plurality of grooves on the semiconductor substrate, the plurality of grooves configured to correspond to the plurality of metal particles; and an insulating material configured to fill the plurality of grooves.
The graphene switching device of claim 1, wherein the semiconductor substrate is formed of a material including one of silicon, germanium, silicon- germanium, a Group I ll -V semiconductor, a Group I I -VI semiconductor, and MoS2. 23 Atty. Dkt. No. 2557S 1 -001887/US
The graphene switching device of claim 1, wherein the first electrode is separate from the graphene layer by a gap.
The graphene switching device of claim 1, wherein the first and second electrodes are formed of one of metal and polysilicon.
The graphene switching device of claim 1, wherein the graphene switching device is a unipolar transistor having a same polarity as that of a dopant of the semiconductor substrate.
The graphene switching device of claim 1, wherein the energy barrier changes according to a gate voltage applied to the gate electrode.
The graphene switching device of claim 1, wherein the graphene layer includes one to four graphene layers. 24
Layer stacks claimed or described, ordered top of device to substrate.
graphene switching device with tunable barrier
Materials described outside the worked examples.
graphene
metal particles
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a graph showing an operation of metal particles in a graphene switching device according to example embodiments; [0025]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
organic film thickness | 1–3 nm | organic film |
metal particle size | 1–10 nm |
Patent
Atlas literature
Patent
US 8,742,400Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a graphene switching device having a tunable barrier according to example embodiments; [0021]
FIGS. 2A through 2D are energy band diagrams for explaining an operation of the graphene switching device of
FIG. 3 is an I -V characteristic curve of an n-type graphene switching device according to example embodiments; 5 Atty. Dkt. No. 2557 S₁ -001887/US [0023]
FIG. 4 is an I -V characteristic curve of a p-type graphene switching device according to example embodiments; [0024]
FIG. 5 is a graph showing an operation of metal particles in a graphene switching device according to example embodiments; [0025]
FIG. 6 is a schematic cross-sectional view of a graphene switching device having a tunable barrier according to example embodiments; and [0026]
FIG. 7 is a schematic cross-sectional view of a graphene switching device having a tunable barrier according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Atty. Dkt. No. 2557S 1 -001887/US WHAT IS CLAIMED IS:
The graphene switching device of claim 1, further comprising: a plurality of grooves on the semiconductor substrate, the plurality of grooves configured to correspond to the plurality of metal particles; and an insulating material configured to fill the plurality of grooves.
The graphene switching device of claim 1, wherein the semiconductor substrate is formed of a material including one of silicon, germanium, silicon- germanium, a Group I ll -V semiconductor, a Group I I -VI semiconductor, and MoS2. 23 Atty. Dkt. No. 2557S 1 -001887/US
The graphene switching device of claim 1, wherein the first electrode is separate from the graphene layer by a gap.
The graphene switching device of claim 1, wherein the first and second electrodes are formed of one of metal and polysilicon.
The graphene switching device of claim 1, wherein the graphene switching device is a unipolar transistor having a same polarity as that of a dopant of the semiconductor substrate.
The graphene switching device of claim 1, wherein the energy barrier changes according to a gate voltage applied to the gate electrode.
The graphene switching device of claim 1, wherein the graphene layer includes one to four graphene layers. 24
Layer stacks claimed or described, ordered top of device to substrate.
graphene switching device with tunable barrier
Materials described outside the worked examples.
graphene
metal particles
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a graph showing an operation of metal particles in a graphene switching device according to example embodiments; [0025]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
organic film thickness | 1–3 nm | organic film |
metal particle size | 1–10 nm |
semiconductor substrate
insulating material
organic film
MoS₂
metal particle gap | 10–30 nm | metal particles |
gap between first electrode and graphene layer | 1–30 nm | — |
— | 4.5–6 eV | — |
— | 3–4.5 eV | — |
semiconductor substrate
insulating material
organic film
MoS₂
metal particle gap | 10–30 nm | metal particles |
gap between first electrode and graphene layer | 1–30 nm | — |
— | 4.5–6 eV | — |
— | 3–4.5 eV | — |
semiconductor substrate
insulating material
organic film
MoS₂
metal particle gap | 10–30 nm | metal particles |
gap between first electrode and graphene layer | 1–30 nm | — |
— | 4.5–6 eV | — |
— | 3–4.5 eV | — |
semiconductor substrate
insulating material
organic film
MoS₂
metal particle gap | 10–30 nm | metal particles |
gap between first electrode and graphene layer | 1–30 nm | — |
— | 4.5–6 eV | — |
— | 3–4.5 eV | — |