Patent
US 9,551,937Graphene Sensor and Method of Fabricating the same and Touch-Sensitive Display Device
Yunping Di
US
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Patent
Atlas literature
Patent
US 9,551,937Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic flow chart of a method of fabricating a graphene sensor according to an embodiment of the present disclosure;
Figure 2 is a schematic view of a structure after forming a graphene layer and a metal layer on a substrate according to an embodiment of the present disclosure;
Figure 3 is a schematic structural view of the structure after a process exposing photoresist by a gray-scale reticle according to the embodiment of the present disclosure;
Figure 4 is a schematic view of the structure according to the embodiment of the 4 present disclosure, from which a part of metal layer is removed;
Figure 5 is a schematic view of the structure according to the embodiment of the present disclosure, from which a part of a graphene layer is removed;
Figure 6 is a schematic view of the structure according to the embodiment of the present disclosure, from which a part of a metal layer is removed;
Figure 7 is a schematic view of the structure according to the embodiment of the present disclosure, wherein a graphene pattern is coated by a protective film;
Figure 8 is a schematic view of the structure according to the embodiment of the present disclosure, wherein the remainder photoresist is striped off;
Figure 9 is a schematic flow chart of a method of fabricating a graphene sensor according to an embodiment of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of fabricating a graphene touch sensor, comprising forming a graphene layer on a substrate; forming a metal layer on the graphene layer; coating a photoresist layer on the metal layer; exposing the photoresist layer by using a gray-scale reticle and developing the exposed photoresist layer to obtain a photoresist completely removed region, a photoresist partially remained region, and a photoresist completely remained region; removing the metal layer located in the photoresist completely removed region; removing the graphene layer located in the photoresist completely removed region; removing the metal layer located in the photoresist partially remained region; coating a protective film on the graphene layer located in the photoresist partially remained region; and striping off the remainder photoresist.
The method according to claim 1, wherein the photoresist is a positive photoresist, and wherein during exposure, if the photoresist is a positive photoresist, the photoresist in the photoresist completely removed region is illuminated while the photoresist in the photoresist completely remained region is not illuminated.
The method according to claim 1, wherein the photoresist is a negative photoresist, and wherein during exposure, if the photoresist is a negative photoresist, the photoresist in the photoresist completely remained region is illuminated while the photoresist in the photoresist completely removed region is not illuminated. First Named Inventor: Yunping Di Application No.: -3-
The method according to claim 1, wherein the step of removing the metal layer located in the photoresist completely removed region comprises: wet etching the metal layer located in the photoresist completely removed region by an acid solution.
The method according to claim 1, wherein the step of removing the graphene layer located in the photoresist completely removed region comprises: dry etching the graphene layer located in the photoresist completely removed region while ashing the photoresist layer in the photoresist partially remained region.
The method according to claim 1, wherein the step of removing the metal layer located in the photoresist partially remained region comprises: wet etching the metal layer located in the photoresist partially remained region by an acid solution.
The method according to claim 1, wherein the protective film is made by a resin material.
The method according to claim 1, wherein the step of striping off the remainder photoresist comprises: striping off the remainder photoresist by an alkaline stripping solution.
A graphene sensor fabricated by the method of according to claim 1, comprising a substrate, a pattern of a graphene layer formed on the substrate and a metal leading wire formed on the pattern of the graphene layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene touch sensor
touch-sensitive display device
No layer stack recorded.
Materials described outside the worked examples.
graphene
metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
monolayer graphene light transmission | 97.7 % | graphene |
monolayer graphene thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,551,937Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic flow chart of a method of fabricating a graphene sensor according to an embodiment of the present disclosure;
Figure 2 is a schematic view of a structure after forming a graphene layer and a metal layer on a substrate according to an embodiment of the present disclosure;
Figure 3 is a schematic structural view of the structure after a process exposing photoresist by a gray-scale reticle according to the embodiment of the present disclosure;
Figure 4 is a schematic view of the structure according to the embodiment of the 4 present disclosure, from which a part of metal layer is removed;
Figure 5 is a schematic view of the structure according to the embodiment of the present disclosure, from which a part of a graphene layer is removed;
Figure 6 is a schematic view of the structure according to the embodiment of the present disclosure, from which a part of a metal layer is removed;
Figure 7 is a schematic view of the structure according to the embodiment of the present disclosure, wherein a graphene pattern is coated by a protective film;
Figure 8 is a schematic view of the structure according to the embodiment of the present disclosure, wherein the remainder photoresist is striped off;
Figure 9 is a schematic flow chart of a method of fabricating a graphene sensor according to an embodiment of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of fabricating a graphene touch sensor, comprising forming a graphene layer on a substrate; forming a metal layer on the graphene layer; coating a photoresist layer on the metal layer; exposing the photoresist layer by using a gray-scale reticle and developing the exposed photoresist layer to obtain a photoresist completely removed region, a photoresist partially remained region, and a photoresist completely remained region; removing the metal layer located in the photoresist completely removed region; removing the graphene layer located in the photoresist completely removed region; removing the metal layer located in the photoresist partially remained region; coating a protective film on the graphene layer located in the photoresist partially remained region; and striping off the remainder photoresist.
The method according to claim 1, wherein the photoresist is a positive photoresist, and wherein during exposure, if the photoresist is a positive photoresist, the photoresist in the photoresist completely removed region is illuminated while the photoresist in the photoresist completely remained region is not illuminated.
The method according to claim 1, wherein the photoresist is a negative photoresist, and wherein during exposure, if the photoresist is a negative photoresist, the photoresist in the photoresist completely remained region is illuminated while the photoresist in the photoresist completely removed region is not illuminated. First Named Inventor: Yunping Di Application No.: -3-
The method according to claim 1, wherein the step of removing the metal layer located in the photoresist completely removed region comprises: wet etching the metal layer located in the photoresist completely removed region by an acid solution.
The method according to claim 1, wherein the step of removing the graphene layer located in the photoresist completely removed region comprises: dry etching the graphene layer located in the photoresist completely removed region while ashing the photoresist layer in the photoresist partially remained region.
The method according to claim 1, wherein the step of removing the metal layer located in the photoresist partially remained region comprises: wet etching the metal layer located in the photoresist partially remained region by an acid solution.
The method according to claim 1, wherein the protective film is made by a resin material.
The method according to claim 1, wherein the step of striping off the remainder photoresist comprises: striping off the remainder photoresist by an alkaline stripping solution.
A graphene sensor fabricated by the method of according to claim 1, comprising a substrate, a pattern of a graphene layer formed on the substrate and a metal leading wire formed on the pattern of the graphene layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene touch sensor
touch-sensitive display device
No layer stack recorded.
Materials described outside the worked examples.
graphene
metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
monolayer graphene light transmission | 97.7 % | graphene |
monolayer graphene thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,551,937Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic flow chart of a method of fabricating a graphene sensor according to an embodiment of the present disclosure;
Figure 2 is a schematic view of a structure after forming a graphene layer and a metal layer on a substrate according to an embodiment of the present disclosure;
Figure 3 is a schematic structural view of the structure after a process exposing photoresist by a gray-scale reticle according to the embodiment of the present disclosure;
Figure 4 is a schematic view of the structure according to the embodiment of the 4 present disclosure, from which a part of metal layer is removed;
Figure 5 is a schematic view of the structure according to the embodiment of the present disclosure, from which a part of a graphene layer is removed;
Figure 6 is a schematic view of the structure according to the embodiment of the present disclosure, from which a part of a metal layer is removed;
Figure 7 is a schematic view of the structure according to the embodiment of the present disclosure, wherein a graphene pattern is coated by a protective film;
Figure 8 is a schematic view of the structure according to the embodiment of the present disclosure, wherein the remainder photoresist is striped off;
Figure 9 is a schematic flow chart of a method of fabricating a graphene sensor according to an embodiment of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of fabricating a graphene touch sensor, comprising forming a graphene layer on a substrate; forming a metal layer on the graphene layer; coating a photoresist layer on the metal layer; exposing the photoresist layer by using a gray-scale reticle and developing the exposed photoresist layer to obtain a photoresist completely removed region, a photoresist partially remained region, and a photoresist completely remained region; removing the metal layer located in the photoresist completely removed region; removing the graphene layer located in the photoresist completely removed region; removing the metal layer located in the photoresist partially remained region; coating a protective film on the graphene layer located in the photoresist partially remained region; and striping off the remainder photoresist.
The method according to claim 1, wherein the photoresist is a positive photoresist, and wherein during exposure, if the photoresist is a positive photoresist, the photoresist in the photoresist completely removed region is illuminated while the photoresist in the photoresist completely remained region is not illuminated.
The method according to claim 1, wherein the photoresist is a negative photoresist, and wherein during exposure, if the photoresist is a negative photoresist, the photoresist in the photoresist completely remained region is illuminated while the photoresist in the photoresist completely removed region is not illuminated. First Named Inventor: Yunping Di Application No.: -3-
The method according to claim 1, wherein the step of removing the metal layer located in the photoresist completely removed region comprises: wet etching the metal layer located in the photoresist completely removed region by an acid solution.
The method according to claim 1, wherein the step of removing the graphene layer located in the photoresist completely removed region comprises: dry etching the graphene layer located in the photoresist completely removed region while ashing the photoresist layer in the photoresist partially remained region.
The method according to claim 1, wherein the step of removing the metal layer located in the photoresist partially remained region comprises: wet etching the metal layer located in the photoresist partially remained region by an acid solution.
The method according to claim 1, wherein the protective film is made by a resin material.
The method according to claim 1, wherein the step of striping off the remainder photoresist comprises: striping off the remainder photoresist by an alkaline stripping solution.
A graphene sensor fabricated by the method of according to claim 1, comprising a substrate, a pattern of a graphene layer formed on the substrate and a metal leading wire formed on the pattern of the graphene layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene touch sensor
touch-sensitive display device
No layer stack recorded.
Materials described outside the worked examples.
graphene
metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
monolayer graphene light transmission | 97.7 % | graphene |
monolayer graphene thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,551,937Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic flow chart of a method of fabricating a graphene sensor according to an embodiment of the present disclosure;
Figure 2 is a schematic view of a structure after forming a graphene layer and a metal layer on a substrate according to an embodiment of the present disclosure;
Figure 3 is a schematic structural view of the structure after a process exposing photoresist by a gray-scale reticle according to the embodiment of the present disclosure;
Figure 4 is a schematic view of the structure according to the embodiment of the 4 present disclosure, from which a part of metal layer is removed;
Figure 5 is a schematic view of the structure according to the embodiment of the present disclosure, from which a part of a graphene layer is removed;
Figure 6 is a schematic view of the structure according to the embodiment of the present disclosure, from which a part of a metal layer is removed;
Figure 7 is a schematic view of the structure according to the embodiment of the present disclosure, wherein a graphene pattern is coated by a protective film;
Figure 8 is a schematic view of the structure according to the embodiment of the present disclosure, wherein the remainder photoresist is striped off;
Figure 9 is a schematic flow chart of a method of fabricating a graphene sensor according to an embodiment of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of fabricating a graphene touch sensor, comprising forming a graphene layer on a substrate; forming a metal layer on the graphene layer; coating a photoresist layer on the metal layer; exposing the photoresist layer by using a gray-scale reticle and developing the exposed photoresist layer to obtain a photoresist completely removed region, a photoresist partially remained region, and a photoresist completely remained region; removing the metal layer located in the photoresist completely removed region; removing the graphene layer located in the photoresist completely removed region; removing the metal layer located in the photoresist partially remained region; coating a protective film on the graphene layer located in the photoresist partially remained region; and striping off the remainder photoresist.
The method according to claim 1, wherein the photoresist is a positive photoresist, and wherein during exposure, if the photoresist is a positive photoresist, the photoresist in the photoresist completely removed region is illuminated while the photoresist in the photoresist completely remained region is not illuminated.
The method according to claim 1, wherein the photoresist is a negative photoresist, and wherein during exposure, if the photoresist is a negative photoresist, the photoresist in the photoresist completely remained region is illuminated while the photoresist in the photoresist completely removed region is not illuminated. First Named Inventor: Yunping Di Application No.: -3-
The method according to claim 1, wherein the step of removing the metal layer located in the photoresist completely removed region comprises: wet etching the metal layer located in the photoresist completely removed region by an acid solution.
The method according to claim 1, wherein the step of removing the graphene layer located in the photoresist completely removed region comprises: dry etching the graphene layer located in the photoresist completely removed region while ashing the photoresist layer in the photoresist partially remained region.
The method according to claim 1, wherein the step of removing the metal layer located in the photoresist partially remained region comprises: wet etching the metal layer located in the photoresist partially remained region by an acid solution.
The method according to claim 1, wherein the protective film is made by a resin material.
The method according to claim 1, wherein the step of striping off the remainder photoresist comprises: striping off the remainder photoresist by an alkaline stripping solution.
A graphene sensor fabricated by the method of according to claim 1, comprising a substrate, a pattern of a graphene layer formed on the substrate and a metal leading wire formed on the pattern of the graphene layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene touch sensor
touch-sensitive display device
No layer stack recorded.
Materials described outside the worked examples.
graphene
metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
monolayer graphene light transmission | 97.7 % | graphene |
monolayer graphene thickness |
Related documents with shared materials, methods, properties, or citations.
photoresist
protective film (resin material)
substrate
| 0.335 nm |
graphene |
ultrahigh carrier mobility of graphene | 200000 cm2/Vsec | graphene |
graphene mechanical strength (tensile strength) | — | graphene |
GRAPHENE OPTICAL SENSOR
photoresist
protective film (resin material)
substrate
| 0.335 nm |
graphene |
ultrahigh carrier mobility of graphene | 200000 cm2/Vsec | graphene |
graphene mechanical strength (tensile strength) | — | graphene |
GRAPHENE OPTICAL SENSOR
photoresist
protective film (resin material)
substrate
| 0.335 nm |
graphene |
ultrahigh carrier mobility of graphene | 200000 cm2/Vsec | graphene |
graphene mechanical strength (tensile strength) | — | graphene |
GRAPHENE OPTICAL SENSOR
photoresist
protective film (resin material)
substrate
| 0.335 nm |
graphene |
ultrahigh carrier mobility of graphene | 200000 cm2/Vsec | graphene |
graphene mechanical strength (tensile strength) | — | graphene |
GRAPHENE OPTICAL SENSOR