Patent
US 9,431,346GRAPHENE-METAL E-FUSE
Junjing Bao
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,431,346Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart of a method of forming a hybrid graphene-metal interconnect structure, according to an exemplary embodiment of the present invention; …
FIG. 2A is a cross-sectional view of an interconnect structure having an Mx level including an M x dielectric, a first M x metal, a second M x metal, and an M x …
FIG. 3 is a flow chart of a method of forming a hybrid graphene-metal interconnect structure, according to another exemplary embodiment of the present …
FIG. 4B is a cross-sectional view depicting forming a first M x41 end metal in the first end trench of the M x4i level, a second M x4i end metal in the second …
FIG. 5 is a top view depicting a hybrid graphene line including a plurality of metal portions and a plurality of graphene portions, according to an exemplary …
FIG. 6 along section line D-D. [0036] Elements of the figures are not necessarily to scale and are not intended to portray specific parameters of the invention. …
FIG. 7 is a cross-sectional view of
FIG. 8 is a cross-sectional view depicting an electronic fuse structure according to an exemplary embodiment of the present invention; [0031]
FIG. 9 is a cross-sectional view of
FIG. 10 is a cross-sectional view depicting an electronic fuse structure according to an exemplary embodiment of the present invention; [0033]
FIG. 11 is a cross-sectional view of
FIG. 12 is a cross-sectional view depicting an electronic fuse structure according to an exemplary embodiment of the present invention; and [0035]
FIG. 13 is a cross-sectional view of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-7. canceled
A method comprising: forming an M x level comprising a first M x metal, a second M x metal, and a third M x metal abutting and electrically connected in sequence with one another, such that the third Mx metal abuts and is positioned between the first and second Mx metals, wherein the second and third M x SVG 14454765.01-22-2016.IJQCUNS₄PXXIFW3.CLM.1.9.301.1396.431.1439.svg 0.143 0.433 Chemistry Black and white comprising comprise graphene; and forming an M x+i level above the M x level, the M x+i level comprising an M x+i metal and an Mx+i via, the Mx+i via electrically connecting the second third M x metal to the M x+i metal in a vertical orientation, wherein the Mx+ 1 via is adjacent to the third Mx metal and directly contacts the second Mx metal.
The method of claim 8, wherein the third M x metal comprises a length less than or equal to a critical length below which the third M x metal will not fail by electromigration.
The method of claim 8, wherein the third M x metal comprises a length less than or equal to an electromigration threshold length, below which any electromigration effect is negligible. 14/454,765 Page 2 of 7
The method of claim 8, wherein the third M x metal comprises a length less than or equal to a blech length.
The method of claim 8, wherein a height of the second M x metal is less than a height of either the first M x metal or the third M x metal.
The structure of claim 8, wherein a width of the second M x metal is approximately equal to a width of either the first M x metal or the third M x metal.
The method of claim 8, wherein a width of either the second M x metal or the third Mx metal is approximately one to three times a width of the second M x metal.
A method comprising: etching, in an M x dielectric layer, a first trench and a second trench; filling the first trench and the second trench with a metal to form a first M x metal, and a second M x metal; forming a third trench abutting and in between the first M x metal and the second M x metal; filling the third trench with graphene to form a third M x metal, the graphene of the third Mx metal is in direct contact with the metal of both the first M x metal and the second M x metal; etching, in an M x-i dielectric layer, a dual damascene opening comprising a via opening and a trench, the via opening being directly above and exposing an upper surface of the second Mx metal; and 14/454,765 Page 3 of 7 filling the via opening and the trench with the metal to form an M x+ 1 via and an M x+ 1 metal, the M x+ 1 via being adjacent to the third M x metal and in direct contact with the second M x metal in the M x dielectric layer.
The method of claim 15, wherein the second M x metal comprises a length less than or equal to a critical length below which the second M x metal will not fail by electromigration.
The method of claim 15, wherein the second M x metal comprises a length less than or equal to an electromigration threshold length, below which any electromigration effect is negligible.
The method of claim 15, wherein the second M x metal comprises a length less than or equal to a blech length.
The method of claim 15, wherein a height of the second M x metal is less than a height of either the first M x metal or the third M x metal.
The method of claim 15, wherein a width of either the first M x metal or the second Mx metal is approximately one to three times a width of the third M x metal. 14/454,765 Page 4 of 7
Layer stacks claimed or described, ordered top of device to substrate.
hybrid graphene-metal BEOL interconnect structure (claim 8 embodiment)
hybrid graphene-metal BEOL interconnect structure (claim 15 embodiment)
Materials described outside the worked examples.
graphene
metal (copper, aluminum, or tungsten)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 70–140 nm | — |
Thickness |
Patent
Atlas literature
Patent
US 9,431,346Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart of a method of forming a hybrid graphene-metal interconnect structure, according to an exemplary embodiment of the present invention; …
FIG. 2A is a cross-sectional view of an interconnect structure having an Mx level including an M x dielectric, a first M x metal, a second M x metal, and an M x …
FIG. 3 is a flow chart of a method of forming a hybrid graphene-metal interconnect structure, according to another exemplary embodiment of the present …
FIG. 4B is a cross-sectional view depicting forming a first M x41 end metal in the first end trench of the M x4i level, a second M x4i end metal in the second …
FIG. 5 is a top view depicting a hybrid graphene line including a plurality of metal portions and a plurality of graphene portions, according to an exemplary …
FIG. 6 along section line D-D. [0036] Elements of the figures are not necessarily to scale and are not intended to portray specific parameters of the invention. …
FIG. 7 is a cross-sectional view of
FIG. 8 is a cross-sectional view depicting an electronic fuse structure according to an exemplary embodiment of the present invention; [0031]
FIG. 9 is a cross-sectional view of
FIG. 10 is a cross-sectional view depicting an electronic fuse structure according to an exemplary embodiment of the present invention; [0033]
FIG. 11 is a cross-sectional view of
FIG. 12 is a cross-sectional view depicting an electronic fuse structure according to an exemplary embodiment of the present invention; and [0035]
FIG. 13 is a cross-sectional view of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-7. canceled
A method comprising: forming an M x level comprising a first M x metal, a second M x metal, and a third M x metal abutting and electrically connected in sequence with one another, such that the third Mx metal abuts and is positioned between the first and second Mx metals, wherein the second and third M x SVG 14454765.01-22-2016.IJQCUNS₄PXXIFW3.CLM.1.9.301.1396.431.1439.svg 0.143 0.433 Chemistry Black and white comprising comprise graphene; and forming an M x+i level above the M x level, the M x+i level comprising an M x+i metal and an Mx+i via, the Mx+i via electrically connecting the second third M x metal to the M x+i metal in a vertical orientation, wherein the Mx+ 1 via is adjacent to the third Mx metal and directly contacts the second Mx metal.
The method of claim 8, wherein the third M x metal comprises a length less than or equal to a critical length below which the third M x metal will not fail by electromigration.
The method of claim 8, wherein the third M x metal comprises a length less than or equal to an electromigration threshold length, below which any electromigration effect is negligible. 14/454,765 Page 2 of 7
The method of claim 8, wherein the third M x metal comprises a length less than or equal to a blech length.
The method of claim 8, wherein a height of the second M x metal is less than a height of either the first M x metal or the third M x metal.
The structure of claim 8, wherein a width of the second M x metal is approximately equal to a width of either the first M x metal or the third M x metal.
The method of claim 8, wherein a width of either the second M x metal or the third Mx metal is approximately one to three times a width of the second M x metal.
A method comprising: etching, in an M x dielectric layer, a first trench and a second trench; filling the first trench and the second trench with a metal to form a first M x metal, and a second M x metal; forming a third trench abutting and in between the first M x metal and the second M x metal; filling the third trench with graphene to form a third M x metal, the graphene of the third Mx metal is in direct contact with the metal of both the first M x metal and the second M x metal; etching, in an M x-i dielectric layer, a dual damascene opening comprising a via opening and a trench, the via opening being directly above and exposing an upper surface of the second Mx metal; and 14/454,765 Page 3 of 7 filling the via opening and the trench with the metal to form an M x+ 1 via and an M x+ 1 metal, the M x+ 1 via being adjacent to the third M x metal and in direct contact with the second M x metal in the M x dielectric layer.
The method of claim 15, wherein the second M x metal comprises a length less than or equal to a critical length below which the second M x metal will not fail by electromigration.
The method of claim 15, wherein the second M x metal comprises a length less than or equal to an electromigration threshold length, below which any electromigration effect is negligible.
The method of claim 15, wherein the second M x metal comprises a length less than or equal to a blech length.
The method of claim 15, wherein a height of the second M x metal is less than a height of either the first M x metal or the third M x metal.
The method of claim 15, wherein a width of either the first M x metal or the second Mx metal is approximately one to three times a width of the third M x metal. 14/454,765 Page 4 of 7
Layer stacks claimed or described, ordered top of device to substrate.
hybrid graphene-metal BEOL interconnect structure (claim 8 embodiment)
hybrid graphene-metal BEOL interconnect structure (claim 15 embodiment)
Materials described outside the worked examples.
graphene
metal (copper, aluminum, or tungsten)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 70–140 nm | — |
Thickness |
Patent
Atlas literature
Patent
US 9,431,346Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart of a method of forming a hybrid graphene-metal interconnect structure, according to an exemplary embodiment of the present invention; …
FIG. 2A is a cross-sectional view of an interconnect structure having an Mx level including an M x dielectric, a first M x metal, a second M x metal, and an M x …
FIG. 3 is a flow chart of a method of forming a hybrid graphene-metal interconnect structure, according to another exemplary embodiment of the present …
FIG. 4B is a cross-sectional view depicting forming a first M x41 end metal in the first end trench of the M x4i level, a second M x4i end metal in the second …
FIG. 5 is a top view depicting a hybrid graphene line including a plurality of metal portions and a plurality of graphene portions, according to an exemplary …
FIG. 6 along section line D-D. [0036] Elements of the figures are not necessarily to scale and are not intended to portray specific parameters of the invention. …
FIG. 7 is a cross-sectional view of
FIG. 8 is a cross-sectional view depicting an electronic fuse structure according to an exemplary embodiment of the present invention; [0031]
FIG. 9 is a cross-sectional view of
FIG. 10 is a cross-sectional view depicting an electronic fuse structure according to an exemplary embodiment of the present invention; [0033]
FIG. 11 is a cross-sectional view of
FIG. 12 is a cross-sectional view depicting an electronic fuse structure according to an exemplary embodiment of the present invention; and [0035]
FIG. 13 is a cross-sectional view of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-7. canceled
A method comprising: forming an M x level comprising a first M x metal, a second M x metal, and a third M x metal abutting and electrically connected in sequence with one another, such that the third Mx metal abuts and is positioned between the first and second Mx metals, wherein the second and third M x SVG 14454765.01-22-2016.IJQCUNS₄PXXIFW3.CLM.1.9.301.1396.431.1439.svg 0.143 0.433 Chemistry Black and white comprising comprise graphene; and forming an M x+i level above the M x level, the M x+i level comprising an M x+i metal and an Mx+i via, the Mx+i via electrically connecting the second third M x metal to the M x+i metal in a vertical orientation, wherein the Mx+ 1 via is adjacent to the third Mx metal and directly contacts the second Mx metal.
The method of claim 8, wherein the third M x metal comprises a length less than or equal to a critical length below which the third M x metal will not fail by electromigration.
The method of claim 8, wherein the third M x metal comprises a length less than or equal to an electromigration threshold length, below which any electromigration effect is negligible. 14/454,765 Page 2 of 7
The method of claim 8, wherein the third M x metal comprises a length less than or equal to a blech length.
The method of claim 8, wherein a height of the second M x metal is less than a height of either the first M x metal or the third M x metal.
The structure of claim 8, wherein a width of the second M x metal is approximately equal to a width of either the first M x metal or the third M x metal.
The method of claim 8, wherein a width of either the second M x metal or the third Mx metal is approximately one to three times a width of the second M x metal.
A method comprising: etching, in an M x dielectric layer, a first trench and a second trench; filling the first trench and the second trench with a metal to form a first M x metal, and a second M x metal; forming a third trench abutting and in between the first M x metal and the second M x metal; filling the third trench with graphene to form a third M x metal, the graphene of the third Mx metal is in direct contact with the metal of both the first M x metal and the second M x metal; etching, in an M x-i dielectric layer, a dual damascene opening comprising a via opening and a trench, the via opening being directly above and exposing an upper surface of the second Mx metal; and 14/454,765 Page 3 of 7 filling the via opening and the trench with the metal to form an M x+ 1 via and an M x+ 1 metal, the M x+ 1 via being adjacent to the third M x metal and in direct contact with the second M x metal in the M x dielectric layer.
The method of claim 15, wherein the second M x metal comprises a length less than or equal to a critical length below which the second M x metal will not fail by electromigration.
The method of claim 15, wherein the second M x metal comprises a length less than or equal to an electromigration threshold length, below which any electromigration effect is negligible.
The method of claim 15, wherein the second M x metal comprises a length less than or equal to a blech length.
The method of claim 15, wherein a height of the second M x metal is less than a height of either the first M x metal or the third M x metal.
The method of claim 15, wherein a width of either the first M x metal or the second Mx metal is approximately one to three times a width of the third M x metal. 14/454,765 Page 4 of 7
Layer stacks claimed or described, ordered top of device to substrate.
hybrid graphene-metal BEOL interconnect structure (claim 8 embodiment)
hybrid graphene-metal BEOL interconnect structure (claim 15 embodiment)
Materials described outside the worked examples.
graphene
metal (copper, aluminum, or tungsten)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 70–140 nm | — |
Thickness |
Patent
Atlas literature
Patent
US 9,431,346Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart of a method of forming a hybrid graphene-metal interconnect structure, according to an exemplary embodiment of the present invention; …
FIG. 2A is a cross-sectional view of an interconnect structure having an Mx level including an M x dielectric, a first M x metal, a second M x metal, and an M x …
FIG. 3 is a flow chart of a method of forming a hybrid graphene-metal interconnect structure, according to another exemplary embodiment of the present …
FIG. 4B is a cross-sectional view depicting forming a first M x41 end metal in the first end trench of the M x4i level, a second M x4i end metal in the second …
FIG. 5 is a top view depicting a hybrid graphene line including a plurality of metal portions and a plurality of graphene portions, according to an exemplary …
FIG. 6 along section line D-D. [0036] Elements of the figures are not necessarily to scale and are not intended to portray specific parameters of the invention. …
FIG. 7 is a cross-sectional view of
FIG. 8 is a cross-sectional view depicting an electronic fuse structure according to an exemplary embodiment of the present invention; [0031]
FIG. 9 is a cross-sectional view of
FIG. 10 is a cross-sectional view depicting an electronic fuse structure according to an exemplary embodiment of the present invention; [0033]
FIG. 11 is a cross-sectional view of
FIG. 12 is a cross-sectional view depicting an electronic fuse structure according to an exemplary embodiment of the present invention; and [0035]
FIG. 13 is a cross-sectional view of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-7. canceled
A method comprising: forming an M x level comprising a first M x metal, a second M x metal, and a third M x metal abutting and electrically connected in sequence with one another, such that the third Mx metal abuts and is positioned between the first and second Mx metals, wherein the second and third M x SVG 14454765.01-22-2016.IJQCUNS₄PXXIFW3.CLM.1.9.301.1396.431.1439.svg 0.143 0.433 Chemistry Black and white comprising comprise graphene; and forming an M x+i level above the M x level, the M x+i level comprising an M x+i metal and an Mx+i via, the Mx+i via electrically connecting the second third M x metal to the M x+i metal in a vertical orientation, wherein the Mx+ 1 via is adjacent to the third Mx metal and directly contacts the second Mx metal.
The method of claim 8, wherein the third M x metal comprises a length less than or equal to a critical length below which the third M x metal will not fail by electromigration.
The method of claim 8, wherein the third M x metal comprises a length less than or equal to an electromigration threshold length, below which any electromigration effect is negligible. 14/454,765 Page 2 of 7
The method of claim 8, wherein the third M x metal comprises a length less than or equal to a blech length.
The method of claim 8, wherein a height of the second M x metal is less than a height of either the first M x metal or the third M x metal.
The structure of claim 8, wherein a width of the second M x metal is approximately equal to a width of either the first M x metal or the third M x metal.
The method of claim 8, wherein a width of either the second M x metal or the third Mx metal is approximately one to three times a width of the second M x metal.
A method comprising: etching, in an M x dielectric layer, a first trench and a second trench; filling the first trench and the second trench with a metal to form a first M x metal, and a second M x metal; forming a third trench abutting and in between the first M x metal and the second M x metal; filling the third trench with graphene to form a third M x metal, the graphene of the third Mx metal is in direct contact with the metal of both the first M x metal and the second M x metal; etching, in an M x-i dielectric layer, a dual damascene opening comprising a via opening and a trench, the via opening being directly above and exposing an upper surface of the second Mx metal; and 14/454,765 Page 3 of 7 filling the via opening and the trench with the metal to form an M x+ 1 via and an M x+ 1 metal, the M x+ 1 via being adjacent to the third M x metal and in direct contact with the second M x metal in the M x dielectric layer.
The method of claim 15, wherein the second M x metal comprises a length less than or equal to a critical length below which the second M x metal will not fail by electromigration.
The method of claim 15, wherein the second M x metal comprises a length less than or equal to an electromigration threshold length, below which any electromigration effect is negligible.
The method of claim 15, wherein the second M x metal comprises a length less than or equal to a blech length.
The method of claim 15, wherein a height of the second M x metal is less than a height of either the first M x metal or the third M x metal.
The method of claim 15, wherein a width of either the first M x metal or the second Mx metal is approximately one to three times a width of the third M x metal. 14/454,765 Page 4 of 7
Layer stacks claimed or described, ordered top of device to substrate.
hybrid graphene-metal BEOL interconnect structure (claim 8 embodiment)
hybrid graphene-metal BEOL interconnect structure (claim 15 embodiment)
Materials described outside the worked examples.
graphene
metal (copper, aluminum, or tungsten)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 70–140 nm | — |
Thickness |
Mx dielectric
Mx capping layer
| — |
Thickness | 90–200 nm | — |
Thickness | 50–160 nm | — |
Thickness | 1–10 nm | — |
Thickness | 25–80 nm | — |
Thickness | 2–5 nm | — |
Thickness | 5–40 nm | — |
Thickness | 15–120 nm | — |
Thickness | 100–450 nm | — |
Thickness | 15–55 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–80 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 450 nm | — |
Thickness | ≥ 55 nm | — |
Thickness | ≥ 1 nm | — |
Mx dielectric
Mx capping layer
| — |
Thickness | 90–200 nm | — |
Thickness | 50–160 nm | — |
Thickness | 1–10 nm | — |
Thickness | 25–80 nm | — |
Thickness | 2–5 nm | — |
Thickness | 5–40 nm | — |
Thickness | 15–120 nm | — |
Thickness | 100–450 nm | — |
Thickness | 15–55 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–80 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 450 nm | — |
Thickness | ≥ 55 nm | — |
Thickness | ≥ 1 nm | — |
Mx dielectric
Mx capping layer
| — |
Thickness | 90–200 nm | — |
Thickness | 50–160 nm | — |
Thickness | 1–10 nm | — |
Thickness | 25–80 nm | — |
Thickness | 2–5 nm | — |
Thickness | 5–40 nm | — |
Thickness | 15–120 nm | — |
Thickness | 100–450 nm | — |
Thickness | 15–55 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–80 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 450 nm | — |
Thickness | ≥ 55 nm | — |
Thickness | ≥ 1 nm | — |
Mx dielectric
Mx capping layer
| — |
Thickness | 90–200 nm | — |
Thickness | 50–160 nm | — |
Thickness | 1–10 nm | — |
Thickness | 25–80 nm | — |
Thickness | 2–5 nm | — |
Thickness | 5–40 nm | — |
Thickness | 15–120 nm | — |
Thickness | 100–450 nm | — |
Thickness | 15–55 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–80 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 450 nm | — |
Thickness | ≥ 55 nm | — |
Thickness | ≥ 1 nm | — |