Patent
US 8,758,650GRAPHENE-BASED THERMOPILE
RADU M. MARINESCU
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,758,650Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 0 A-1 0D, 11A-11D, and 12A-12C illustrate a process for making an exemplary unipolar graphene thermopile having a back-mounted ground contact.
FIG. 2 illustrates a cross-sectional view an exemplary unipolar graphene thermopile having a back-mounted ground contact. [0021]
FIG. 3 illustrates a top view of a layout of masks that may be used to form an exemplary unipolar graphene thermopile. [0022]
FIG. 4 illustrates a cross-sectional view an exemplary unipolar graphene thermopile having a front-mounted ground contact. [0023]
FIG. 5 illustrates an exemplary bipolar graphene thermopile. [0024]
FIG. 6 illustrates a cross-sectional view an exemplary bipolar graphene thermopile having a back-mounted ground contact. [0025]
FIG. 7 illustrates a top view of a layout of masks that may be used to form an exemplary bipolar graphene thermopile. [0026]
FIG. 8 illustrates a cross-sectional view an exemplary bipolar graphene thermopile having a front-mounted ground contact. [0027]
FIGS. 9A and 9B illustrate block diagrams of both unipolar and bipolar thermopiles. [0028]
FIG. 10 B illustrates the next step of the process where membrane 123 may be pa-1460514 17 deposited on the upper surface of silicon substrate 101. In some …
FIG. 11 A illustrates the next step of the process where a layer of graphene material may be deposited on a portion of insulating layer 205 and a portion of …
FIG. 12A illustrates the next step of the process where portions of nitride layer 211 and insulating layer 206 may be etched away. Specifically, openings may be …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A thermopile comprising: an absorber region; a thermocouple comprising: a first strip formed from graphene and with one end thereof being thermally coupled to the absorber region; and a second strip with one end thereof being thermally coupled to the absorber region, wherein the second strip is coupled to the first strip; and a circuit arranged to apply a first external voltage to the first strip so that said strips generate a voltage in response to radiation received by the absorber region.
The thermopile of claim 1, wherein the second strip is formed from graphene, and wherein the circuit is f u rther arranged to apply a second external voltage to the second strip.
The thermopile of claim 1, wherein the first external voltage is supplied by a battery.
The thermopile of claim 1, wherein the second strip is formed from a metal.
A thermopile for monitoring radiation, the thermopile comprising: 2 a semiconductor substrate; a first bias plate operable to couple to a first voltage source; a ground plate operable to couple to ground; a first thermocouple comprising: a first strip having a first Seebeck coefficient; and a first graphene strip coupled to the first strip and at least partially disposed between the first bias plate and the ground plate, wherein the first graphene strip has a second Seebeck coefficient that is different from the first Seebeck coefficient when the first voltage source is applied to the first bias plate; and an absorber thermally coupled to the first thermocouple, wherein the first thermocouple is operable to generate a voltage in response to receiving radiation from the absorber, the voltage corresponding to an amount of received radiation.
The thermopile of claim 6 further comprising a second thermocouple comprising: a second strip having a third Seebeck coefficient, wherein the second strip is coupled to the first graphene strip; and a second graphene strip coupled to the second strip and at least partially disposed between the first bias plate and the ground plate, wherein the second graphene strip has a fourth Seebeck coefficient that is different from the third Seebeck coefficient when the first voltage source is applied to the first bias plate.
The thermopile of claim 6, wherein the thermopile further comprises a polymer layer disposed between the first graphene strip and the first bias plate.
The thermopile of claim 6, wherein the first voltage source has a voltage between 0.7 V and 1.0 V, and wherein first graphene strip has a Seebeck 3 coefficient between 10 mV/.degree.K and 30 mV/.degree.K when the first voltage source is applied to the first bias plate.
The thermopile of claim 6, further comprising a ground contact coupled to the ground plate through the substrate, wherein the ground contact is located on a side of the substrate opposite the first bias plate, ground plate, and first thermocouple.
The thermopile of claim 6, further comprising a ground contact coupled to the ground plate, wherein the ground contact is located on a side of the substrate that is the same as a side of the substrate that the first bias plate, ground plate, and first thermocouple are located.
The thermopile of claim 6, wherein the first strip comprises aluminum.
The thermopile of claim 6, wherein the bias plate comprises a layer of doped silicon capped with a layer of titanium silicon.
A thermopile for monitoring radiation, the thermopile comprising: a semiconductor substrate; a first bias plate operable to couple to a first voltage source; a second bias plate operable to couple to a second voltage source; a ground plate operable to couple to ground; a first thermocouple comprising: a first graphene strip at least partially disposed between the first bias plate and the ground plate, wherein the first graphene strip has a first Seebeck coefficient when the first voltage source is applied to the first bias plate; and a second graphene strip coupled to the first graphene strip and at least partially disposed between the second bias plate and the ground 4 plate, wherein the second graphene strip has a second Seebeck coefficient that is different than the first Seebeck coefficient when the second voltage source is applied to the second bias plate; and an absorber thermally coupled to the first thermocouple, wherein the first thermocouple is operable to generate a voltage in response to receiving radiation from the absorber, the voltage corresponding to an amount of received radiation.
The thermopile of claim 15 further comprising a second thermocouple comprising: a third graphene strip coupled to the second graphene strip and at least partially disposed between the first bias plate and the ground plate, wherein the third graphene strip has a third Seebeck coefficient when the first voltage source is applied to the first bias plate; and a fourth graphene strip coupled to the third graphene strip and at least partially disposed between the second bias plate and the ground plate, wherein the fourth graphene strip has the fourth Seebeck coefficient that is different from the third Seebeck coefficient when the second voltage source is applied to the second bias plate.
The thermopile of claim 15, wherein the thermopile further comprises: a first polymer strip disposed between the first graphene strip and the first bias plate; and a second polymer strip disposed between the second graphene strip and the second bias plate.
The thermopile of claim 15, wherein a voltage of the first voltage source is different from a voltage of the second voltage source.
The thermopile of claim 15, wherein the first voltage source has a voltage between 0.7 V and 1.0 V, and wherein the first Seebeck coefficient is between 10 mV/.degree.K and mV/.degree.K.
The thermopile of claim 15, wherein the second voltage source has a voltage between -0.7 V and -1.0 V, and wherein the second Seebeck coefficient is between -10 mV/.degree.K and -30 mV/.degree.K.
The thermopile of claim 15, further comprising a ground contact coupled to the ground plate through the substrate, wherein the ground contact is located on a side of the substrate opposite the first bias plate, second bias plate, ground plate, and first thermocouple.
The thermopile of claim 15, further comprising a ground contact coupled to the ground plate wherein the ground contact is located on a side of the substrate that is the same as a side that the first bias plate, second bias plate, ground plate, and first thermocouple are located.
A method for manufacturing a thermopile, the method comprising: depositing a ground plate on a semiconductor substrate; depositing a first insulating layer on the ground plate; depositing a strip of conductive material on the first insulating layer; depositing a graphene strip on the first insulating layer such that the graphene strip is coupled to the strip of conductive material; depositing a polymer layer on the graphene strip; depositing a second insulating layer such that the second insulating layer at least covers the polymer layer and graphene strip; and 6 depositing a bias plate on the second insulating layer such that at least a portion of the graphene strip is positioned between the bias plate and the ground plate. withdrawn
The method of claim 24, wherein the bias plate is arranged to apply an external voltage to the graphene strip so that the strip of conductive material and the graphene strip generate a voltage in response to radiation. withdrawn
The method of claim 24, wherein the ground plate, first insulating layer, second insulating layer, and bias plate are deposited such that the graphene strip is electrically insulated from the bias plate and the ground plate. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based thermopile (basic)
unipolar graphene thermopile with bias plate and ground plate
Materials described outside the worked examples.
graphene
second strip material (graphene or metal)
metal
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene strip Seebeck coefficient range at bias voltage 0.7–1.0 V | 10–30 | graphene |
first graphene strip Seebeck coefficient range at first bias voltage 0.7–1.0 V (bipolar thermopile) | ≥ 10 |
Patent
Atlas literature
Patent
US 8,758,650Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 0 A-1 0D, 11A-11D, and 12A-12C illustrate a process for making an exemplary unipolar graphene thermopile having a back-mounted ground contact.
FIG. 2 illustrates a cross-sectional view an exemplary unipolar graphene thermopile having a back-mounted ground contact. [0021]
FIG. 3 illustrates a top view of a layout of masks that may be used to form an exemplary unipolar graphene thermopile. [0022]
FIG. 4 illustrates a cross-sectional view an exemplary unipolar graphene thermopile having a front-mounted ground contact. [0023]
FIG. 5 illustrates an exemplary bipolar graphene thermopile. [0024]
FIG. 6 illustrates a cross-sectional view an exemplary bipolar graphene thermopile having a back-mounted ground contact. [0025]
FIG. 7 illustrates a top view of a layout of masks that may be used to form an exemplary bipolar graphene thermopile. [0026]
FIG. 8 illustrates a cross-sectional view an exemplary bipolar graphene thermopile having a front-mounted ground contact. [0027]
FIGS. 9A and 9B illustrate block diagrams of both unipolar and bipolar thermopiles. [0028]
FIG. 10 B illustrates the next step of the process where membrane 123 may be pa-1460514 17 deposited on the upper surface of silicon substrate 101. In some …
FIG. 11 A illustrates the next step of the process where a layer of graphene material may be deposited on a portion of insulating layer 205 and a portion of …
FIG. 12A illustrates the next step of the process where portions of nitride layer 211 and insulating layer 206 may be etched away. Specifically, openings may be …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A thermopile comprising: an absorber region; a thermocouple comprising: a first strip formed from graphene and with one end thereof being thermally coupled to the absorber region; and a second strip with one end thereof being thermally coupled to the absorber region, wherein the second strip is coupled to the first strip; and a circuit arranged to apply a first external voltage to the first strip so that said strips generate a voltage in response to radiation received by the absorber region.
The thermopile of claim 1, wherein the second strip is formed from graphene, and wherein the circuit is f u rther arranged to apply a second external voltage to the second strip.
The thermopile of claim 1, wherein the first external voltage is supplied by a battery.
The thermopile of claim 1, wherein the second strip is formed from a metal.
A thermopile for monitoring radiation, the thermopile comprising: 2 a semiconductor substrate; a first bias plate operable to couple to a first voltage source; a ground plate operable to couple to ground; a first thermocouple comprising: a first strip having a first Seebeck coefficient; and a first graphene strip coupled to the first strip and at least partially disposed between the first bias plate and the ground plate, wherein the first graphene strip has a second Seebeck coefficient that is different from the first Seebeck coefficient when the first voltage source is applied to the first bias plate; and an absorber thermally coupled to the first thermocouple, wherein the first thermocouple is operable to generate a voltage in response to receiving radiation from the absorber, the voltage corresponding to an amount of received radiation.
The thermopile of claim 6 further comprising a second thermocouple comprising: a second strip having a third Seebeck coefficient, wherein the second strip is coupled to the first graphene strip; and a second graphene strip coupled to the second strip and at least partially disposed between the first bias plate and the ground plate, wherein the second graphene strip has a fourth Seebeck coefficient that is different from the third Seebeck coefficient when the first voltage source is applied to the first bias plate.
The thermopile of claim 6, wherein the thermopile further comprises a polymer layer disposed between the first graphene strip and the first bias plate.
The thermopile of claim 6, wherein the first voltage source has a voltage between 0.7 V and 1.0 V, and wherein first graphene strip has a Seebeck 3 coefficient between 10 mV/.degree.K and 30 mV/.degree.K when the first voltage source is applied to the first bias plate.
The thermopile of claim 6, further comprising a ground contact coupled to the ground plate through the substrate, wherein the ground contact is located on a side of the substrate opposite the first bias plate, ground plate, and first thermocouple.
The thermopile of claim 6, further comprising a ground contact coupled to the ground plate, wherein the ground contact is located on a side of the substrate that is the same as a side of the substrate that the first bias plate, ground plate, and first thermocouple are located.
The thermopile of claim 6, wherein the first strip comprises aluminum.
The thermopile of claim 6, wherein the bias plate comprises a layer of doped silicon capped with a layer of titanium silicon.
A thermopile for monitoring radiation, the thermopile comprising: a semiconductor substrate; a first bias plate operable to couple to a first voltage source; a second bias plate operable to couple to a second voltage source; a ground plate operable to couple to ground; a first thermocouple comprising: a first graphene strip at least partially disposed between the first bias plate and the ground plate, wherein the first graphene strip has a first Seebeck coefficient when the first voltage source is applied to the first bias plate; and a second graphene strip coupled to the first graphene strip and at least partially disposed between the second bias plate and the ground 4 plate, wherein the second graphene strip has a second Seebeck coefficient that is different than the first Seebeck coefficient when the second voltage source is applied to the second bias plate; and an absorber thermally coupled to the first thermocouple, wherein the first thermocouple is operable to generate a voltage in response to receiving radiation from the absorber, the voltage corresponding to an amount of received radiation.
The thermopile of claim 15 further comprising a second thermocouple comprising: a third graphene strip coupled to the second graphene strip and at least partially disposed between the first bias plate and the ground plate, wherein the third graphene strip has a third Seebeck coefficient when the first voltage source is applied to the first bias plate; and a fourth graphene strip coupled to the third graphene strip and at least partially disposed between the second bias plate and the ground plate, wherein the fourth graphene strip has the fourth Seebeck coefficient that is different from the third Seebeck coefficient when the second voltage source is applied to the second bias plate.
The thermopile of claim 15, wherein the thermopile further comprises: a first polymer strip disposed between the first graphene strip and the first bias plate; and a second polymer strip disposed between the second graphene strip and the second bias plate.
The thermopile of claim 15, wherein a voltage of the first voltage source is different from a voltage of the second voltage source.
The thermopile of claim 15, wherein the first voltage source has a voltage between 0.7 V and 1.0 V, and wherein the first Seebeck coefficient is between 10 mV/.degree.K and mV/.degree.K.
The thermopile of claim 15, wherein the second voltage source has a voltage between -0.7 V and -1.0 V, and wherein the second Seebeck coefficient is between -10 mV/.degree.K and -30 mV/.degree.K.
The thermopile of claim 15, further comprising a ground contact coupled to the ground plate through the substrate, wherein the ground contact is located on a side of the substrate opposite the first bias plate, second bias plate, ground plate, and first thermocouple.
The thermopile of claim 15, further comprising a ground contact coupled to the ground plate wherein the ground contact is located on a side of the substrate that is the same as a side that the first bias plate, second bias plate, ground plate, and first thermocouple are located.
A method for manufacturing a thermopile, the method comprising: depositing a ground plate on a semiconductor substrate; depositing a first insulating layer on the ground plate; depositing a strip of conductive material on the first insulating layer; depositing a graphene strip on the first insulating layer such that the graphene strip is coupled to the strip of conductive material; depositing a polymer layer on the graphene strip; depositing a second insulating layer such that the second insulating layer at least covers the polymer layer and graphene strip; and 6 depositing a bias plate on the second insulating layer such that at least a portion of the graphene strip is positioned between the bias plate and the ground plate. withdrawn
The method of claim 24, wherein the bias plate is arranged to apply an external voltage to the graphene strip so that the strip of conductive material and the graphene strip generate a voltage in response to radiation. withdrawn
The method of claim 24, wherein the ground plate, first insulating layer, second insulating layer, and bias plate are deposited such that the graphene strip is electrically insulated from the bias plate and the ground plate. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based thermopile (basic)
unipolar graphene thermopile with bias plate and ground plate
Materials described outside the worked examples.
graphene
second strip material (graphene or metal)
metal
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene strip Seebeck coefficient range at bias voltage 0.7–1.0 V | 10–30 | graphene |
first graphene strip Seebeck coefficient range at first bias voltage 0.7–1.0 V (bipolar thermopile) | ≥ 10 |
Patent
Atlas literature
Patent
US 8,758,650Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 0 A-1 0D, 11A-11D, and 12A-12C illustrate a process for making an exemplary unipolar graphene thermopile having a back-mounted ground contact.
FIG. 2 illustrates a cross-sectional view an exemplary unipolar graphene thermopile having a back-mounted ground contact. [0021]
FIG. 3 illustrates a top view of a layout of masks that may be used to form an exemplary unipolar graphene thermopile. [0022]
FIG. 4 illustrates a cross-sectional view an exemplary unipolar graphene thermopile having a front-mounted ground contact. [0023]
FIG. 5 illustrates an exemplary bipolar graphene thermopile. [0024]
FIG. 6 illustrates a cross-sectional view an exemplary bipolar graphene thermopile having a back-mounted ground contact. [0025]
FIG. 7 illustrates a top view of a layout of masks that may be used to form an exemplary bipolar graphene thermopile. [0026]
FIG. 8 illustrates a cross-sectional view an exemplary bipolar graphene thermopile having a front-mounted ground contact. [0027]
FIGS. 9A and 9B illustrate block diagrams of both unipolar and bipolar thermopiles. [0028]
FIG. 10 B illustrates the next step of the process where membrane 123 may be pa-1460514 17 deposited on the upper surface of silicon substrate 101. In some …
FIG. 11 A illustrates the next step of the process where a layer of graphene material may be deposited on a portion of insulating layer 205 and a portion of …
FIG. 12A illustrates the next step of the process where portions of nitride layer 211 and insulating layer 206 may be etched away. Specifically, openings may be …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A thermopile comprising: an absorber region; a thermocouple comprising: a first strip formed from graphene and with one end thereof being thermally coupled to the absorber region; and a second strip with one end thereof being thermally coupled to the absorber region, wherein the second strip is coupled to the first strip; and a circuit arranged to apply a first external voltage to the first strip so that said strips generate a voltage in response to radiation received by the absorber region.
The thermopile of claim 1, wherein the second strip is formed from graphene, and wherein the circuit is f u rther arranged to apply a second external voltage to the second strip.
The thermopile of claim 1, wherein the first external voltage is supplied by a battery.
The thermopile of claim 1, wherein the second strip is formed from a metal.
A thermopile for monitoring radiation, the thermopile comprising: 2 a semiconductor substrate; a first bias plate operable to couple to a first voltage source; a ground plate operable to couple to ground; a first thermocouple comprising: a first strip having a first Seebeck coefficient; and a first graphene strip coupled to the first strip and at least partially disposed between the first bias plate and the ground plate, wherein the first graphene strip has a second Seebeck coefficient that is different from the first Seebeck coefficient when the first voltage source is applied to the first bias plate; and an absorber thermally coupled to the first thermocouple, wherein the first thermocouple is operable to generate a voltage in response to receiving radiation from the absorber, the voltage corresponding to an amount of received radiation.
The thermopile of claim 6 further comprising a second thermocouple comprising: a second strip having a third Seebeck coefficient, wherein the second strip is coupled to the first graphene strip; and a second graphene strip coupled to the second strip and at least partially disposed between the first bias plate and the ground plate, wherein the second graphene strip has a fourth Seebeck coefficient that is different from the third Seebeck coefficient when the first voltage source is applied to the first bias plate.
The thermopile of claim 6, wherein the thermopile further comprises a polymer layer disposed between the first graphene strip and the first bias plate.
The thermopile of claim 6, wherein the first voltage source has a voltage between 0.7 V and 1.0 V, and wherein first graphene strip has a Seebeck 3 coefficient between 10 mV/.degree.K and 30 mV/.degree.K when the first voltage source is applied to the first bias plate.
The thermopile of claim 6, further comprising a ground contact coupled to the ground plate through the substrate, wherein the ground contact is located on a side of the substrate opposite the first bias plate, ground plate, and first thermocouple.
The thermopile of claim 6, further comprising a ground contact coupled to the ground plate, wherein the ground contact is located on a side of the substrate that is the same as a side of the substrate that the first bias plate, ground plate, and first thermocouple are located.
The thermopile of claim 6, wherein the first strip comprises aluminum.
The thermopile of claim 6, wherein the bias plate comprises a layer of doped silicon capped with a layer of titanium silicon.
A thermopile for monitoring radiation, the thermopile comprising: a semiconductor substrate; a first bias plate operable to couple to a first voltage source; a second bias plate operable to couple to a second voltage source; a ground plate operable to couple to ground; a first thermocouple comprising: a first graphene strip at least partially disposed between the first bias plate and the ground plate, wherein the first graphene strip has a first Seebeck coefficient when the first voltage source is applied to the first bias plate; and a second graphene strip coupled to the first graphene strip and at least partially disposed between the second bias plate and the ground 4 plate, wherein the second graphene strip has a second Seebeck coefficient that is different than the first Seebeck coefficient when the second voltage source is applied to the second bias plate; and an absorber thermally coupled to the first thermocouple, wherein the first thermocouple is operable to generate a voltage in response to receiving radiation from the absorber, the voltage corresponding to an amount of received radiation.
The thermopile of claim 15 further comprising a second thermocouple comprising: a third graphene strip coupled to the second graphene strip and at least partially disposed between the first bias plate and the ground plate, wherein the third graphene strip has a third Seebeck coefficient when the first voltage source is applied to the first bias plate; and a fourth graphene strip coupled to the third graphene strip and at least partially disposed between the second bias plate and the ground plate, wherein the fourth graphene strip has the fourth Seebeck coefficient that is different from the third Seebeck coefficient when the second voltage source is applied to the second bias plate.
The thermopile of claim 15, wherein the thermopile further comprises: a first polymer strip disposed between the first graphene strip and the first bias plate; and a second polymer strip disposed between the second graphene strip and the second bias plate.
The thermopile of claim 15, wherein a voltage of the first voltage source is different from a voltage of the second voltage source.
The thermopile of claim 15, wherein the first voltage source has a voltage between 0.7 V and 1.0 V, and wherein the first Seebeck coefficient is between 10 mV/.degree.K and mV/.degree.K.
The thermopile of claim 15, wherein the second voltage source has a voltage between -0.7 V and -1.0 V, and wherein the second Seebeck coefficient is between -10 mV/.degree.K and -30 mV/.degree.K.
The thermopile of claim 15, further comprising a ground contact coupled to the ground plate through the substrate, wherein the ground contact is located on a side of the substrate opposite the first bias plate, second bias plate, ground plate, and first thermocouple.
The thermopile of claim 15, further comprising a ground contact coupled to the ground plate wherein the ground contact is located on a side of the substrate that is the same as a side that the first bias plate, second bias plate, ground plate, and first thermocouple are located.
A method for manufacturing a thermopile, the method comprising: depositing a ground plate on a semiconductor substrate; depositing a first insulating layer on the ground plate; depositing a strip of conductive material on the first insulating layer; depositing a graphene strip on the first insulating layer such that the graphene strip is coupled to the strip of conductive material; depositing a polymer layer on the graphene strip; depositing a second insulating layer such that the second insulating layer at least covers the polymer layer and graphene strip; and 6 depositing a bias plate on the second insulating layer such that at least a portion of the graphene strip is positioned between the bias plate and the ground plate. withdrawn
The method of claim 24, wherein the bias plate is arranged to apply an external voltage to the graphene strip so that the strip of conductive material and the graphene strip generate a voltage in response to radiation. withdrawn
The method of claim 24, wherein the ground plate, first insulating layer, second insulating layer, and bias plate are deposited such that the graphene strip is electrically insulated from the bias plate and the ground plate. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based thermopile (basic)
unipolar graphene thermopile with bias plate and ground plate
Materials described outside the worked examples.
graphene
second strip material (graphene or metal)
metal
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene strip Seebeck coefficient range at bias voltage 0.7–1.0 V | 10–30 | graphene |
first graphene strip Seebeck coefficient range at first bias voltage 0.7–1.0 V (bipolar thermopile) | ≥ 10 |
Patent
Atlas literature
Patent
US 8,758,650Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 0 A-1 0D, 11A-11D, and 12A-12C illustrate a process for making an exemplary unipolar graphene thermopile having a back-mounted ground contact.
FIG. 2 illustrates a cross-sectional view an exemplary unipolar graphene thermopile having a back-mounted ground contact. [0021]
FIG. 3 illustrates a top view of a layout of masks that may be used to form an exemplary unipolar graphene thermopile. [0022]
FIG. 4 illustrates a cross-sectional view an exemplary unipolar graphene thermopile having a front-mounted ground contact. [0023]
FIG. 5 illustrates an exemplary bipolar graphene thermopile. [0024]
FIG. 6 illustrates a cross-sectional view an exemplary bipolar graphene thermopile having a back-mounted ground contact. [0025]
FIG. 7 illustrates a top view of a layout of masks that may be used to form an exemplary bipolar graphene thermopile. [0026]
FIG. 8 illustrates a cross-sectional view an exemplary bipolar graphene thermopile having a front-mounted ground contact. [0027]
FIGS. 9A and 9B illustrate block diagrams of both unipolar and bipolar thermopiles. [0028]
FIG. 10 B illustrates the next step of the process where membrane 123 may be pa-1460514 17 deposited on the upper surface of silicon substrate 101. In some …
FIG. 11 A illustrates the next step of the process where a layer of graphene material may be deposited on a portion of insulating layer 205 and a portion of …
FIG. 12A illustrates the next step of the process where portions of nitride layer 211 and insulating layer 206 may be etched away. Specifically, openings may be …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A thermopile comprising: an absorber region; a thermocouple comprising: a first strip formed from graphene and with one end thereof being thermally coupled to the absorber region; and a second strip with one end thereof being thermally coupled to the absorber region, wherein the second strip is coupled to the first strip; and a circuit arranged to apply a first external voltage to the first strip so that said strips generate a voltage in response to radiation received by the absorber region.
The thermopile of claim 1, wherein the second strip is formed from graphene, and wherein the circuit is f u rther arranged to apply a second external voltage to the second strip.
The thermopile of claim 1, wherein the first external voltage is supplied by a battery.
The thermopile of claim 1, wherein the second strip is formed from a metal.
A thermopile for monitoring radiation, the thermopile comprising: 2 a semiconductor substrate; a first bias plate operable to couple to a first voltage source; a ground plate operable to couple to ground; a first thermocouple comprising: a first strip having a first Seebeck coefficient; and a first graphene strip coupled to the first strip and at least partially disposed between the first bias plate and the ground plate, wherein the first graphene strip has a second Seebeck coefficient that is different from the first Seebeck coefficient when the first voltage source is applied to the first bias plate; and an absorber thermally coupled to the first thermocouple, wherein the first thermocouple is operable to generate a voltage in response to receiving radiation from the absorber, the voltage corresponding to an amount of received radiation.
The thermopile of claim 6 further comprising a second thermocouple comprising: a second strip having a third Seebeck coefficient, wherein the second strip is coupled to the first graphene strip; and a second graphene strip coupled to the second strip and at least partially disposed between the first bias plate and the ground plate, wherein the second graphene strip has a fourth Seebeck coefficient that is different from the third Seebeck coefficient when the first voltage source is applied to the first bias plate.
The thermopile of claim 6, wherein the thermopile further comprises a polymer layer disposed between the first graphene strip and the first bias plate.
The thermopile of claim 6, wherein the first voltage source has a voltage between 0.7 V and 1.0 V, and wherein first graphene strip has a Seebeck 3 coefficient between 10 mV/.degree.K and 30 mV/.degree.K when the first voltage source is applied to the first bias plate.
The thermopile of claim 6, further comprising a ground contact coupled to the ground plate through the substrate, wherein the ground contact is located on a side of the substrate opposite the first bias plate, ground plate, and first thermocouple.
The thermopile of claim 6, further comprising a ground contact coupled to the ground plate, wherein the ground contact is located on a side of the substrate that is the same as a side of the substrate that the first bias plate, ground plate, and first thermocouple are located.
The thermopile of claim 6, wherein the first strip comprises aluminum.
The thermopile of claim 6, wherein the bias plate comprises a layer of doped silicon capped with a layer of titanium silicon.
A thermopile for monitoring radiation, the thermopile comprising: a semiconductor substrate; a first bias plate operable to couple to a first voltage source; a second bias plate operable to couple to a second voltage source; a ground plate operable to couple to ground; a first thermocouple comprising: a first graphene strip at least partially disposed between the first bias plate and the ground plate, wherein the first graphene strip has a first Seebeck coefficient when the first voltage source is applied to the first bias plate; and a second graphene strip coupled to the first graphene strip and at least partially disposed between the second bias plate and the ground 4 plate, wherein the second graphene strip has a second Seebeck coefficient that is different than the first Seebeck coefficient when the second voltage source is applied to the second bias plate; and an absorber thermally coupled to the first thermocouple, wherein the first thermocouple is operable to generate a voltage in response to receiving radiation from the absorber, the voltage corresponding to an amount of received radiation.
The thermopile of claim 15 further comprising a second thermocouple comprising: a third graphene strip coupled to the second graphene strip and at least partially disposed between the first bias plate and the ground plate, wherein the third graphene strip has a third Seebeck coefficient when the first voltage source is applied to the first bias plate; and a fourth graphene strip coupled to the third graphene strip and at least partially disposed between the second bias plate and the ground plate, wherein the fourth graphene strip has the fourth Seebeck coefficient that is different from the third Seebeck coefficient when the second voltage source is applied to the second bias plate.
The thermopile of claim 15, wherein the thermopile further comprises: a first polymer strip disposed between the first graphene strip and the first bias plate; and a second polymer strip disposed between the second graphene strip and the second bias plate.
The thermopile of claim 15, wherein a voltage of the first voltage source is different from a voltage of the second voltage source.
The thermopile of claim 15, wherein the first voltage source has a voltage between 0.7 V and 1.0 V, and wherein the first Seebeck coefficient is between 10 mV/.degree.K and mV/.degree.K.
The thermopile of claim 15, wherein the second voltage source has a voltage between -0.7 V and -1.0 V, and wherein the second Seebeck coefficient is between -10 mV/.degree.K and -30 mV/.degree.K.
The thermopile of claim 15, further comprising a ground contact coupled to the ground plate through the substrate, wherein the ground contact is located on a side of the substrate opposite the first bias plate, second bias plate, ground plate, and first thermocouple.
The thermopile of claim 15, further comprising a ground contact coupled to the ground plate wherein the ground contact is located on a side of the substrate that is the same as a side that the first bias plate, second bias plate, ground plate, and first thermocouple are located.
A method for manufacturing a thermopile, the method comprising: depositing a ground plate on a semiconductor substrate; depositing a first insulating layer on the ground plate; depositing a strip of conductive material on the first insulating layer; depositing a graphene strip on the first insulating layer such that the graphene strip is coupled to the strip of conductive material; depositing a polymer layer on the graphene strip; depositing a second insulating layer such that the second insulating layer at least covers the polymer layer and graphene strip; and 6 depositing a bias plate on the second insulating layer such that at least a portion of the graphene strip is positioned between the bias plate and the ground plate. withdrawn
The method of claim 24, wherein the bias plate is arranged to apply an external voltage to the graphene strip so that the strip of conductive material and the graphene strip generate a voltage in response to radiation. withdrawn
The method of claim 24, wherein the ground plate, first insulating layer, second insulating layer, and bias plate are deposited such that the graphene strip is electrically insulated from the bias plate and the ground plate. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based thermopile (basic)
unipolar graphene thermopile with bias plate and ground plate
Materials described outside the worked examples.
graphene
second strip material (graphene or metal)
metal
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene strip Seebeck coefficient range at bias voltage 0.7–1.0 V | 10–30 | graphene |
first graphene strip Seebeck coefficient range at first bias voltage 0.7–1.0 V (bipolar thermopile) | ≥ 10 |
bipolar graphene thermopile with two bias plates and ground plate
semiconductor substrate
polymer layer
aluminum
Al
doped silicon
titanium silicon (TiSi)
carbon-black absorber
N-type poly-silicon
P-type poly-silicon
graphene |
second graphene strip Seebeck coefficient range at second bias voltage -0.7 to -1.0 V (bipolar thermopile) | -30–-10 | graphene |
Voltage | 0.7–1 V | — |
bipolar graphene thermopile with two bias plates and ground plate
semiconductor substrate
polymer layer
aluminum
Al
doped silicon
titanium silicon (TiSi)
carbon-black absorber
N-type poly-silicon
P-type poly-silicon
graphene |
second graphene strip Seebeck coefficient range at second bias voltage -0.7 to -1.0 V (bipolar thermopile) | -30–-10 | graphene |
Voltage | 0.7–1 V | — |
bipolar graphene thermopile with two bias plates and ground plate
semiconductor substrate
polymer layer
aluminum
Al
doped silicon
titanium silicon (TiSi)
carbon-black absorber
N-type poly-silicon
P-type poly-silicon
graphene |
second graphene strip Seebeck coefficient range at second bias voltage -0.7 to -1.0 V (bipolar thermopile) | -30–-10 | graphene |
Voltage | 0.7–1 V | — |
bipolar graphene thermopile with two bias plates and ground plate
semiconductor substrate
polymer layer
aluminum
Al
doped silicon
titanium silicon (TiSi)
carbon-black absorber
N-type poly-silicon
P-type poly-silicon
graphene |
second graphene strip Seebeck coefficient range at second bias voltage -0.7 to -1.0 V (bipolar thermopile) | -30–-10 | graphene |
Voltage | 0.7–1 V | — |