A gallium nitride amplifier circuit, wherein said gallium nitride amplifier circuit accepts a plurality of currents and outputs a plurality of voltages, and B₂ wherein said gallium nitride amplifier circuit comprises a first transistor, a second transistor, a third transistor, a first resistor and a second resistor, said first resistor electrically connecting said second resistor and a drain electrode of said first transistor, a gate electrode of said third transistor electrically connecting a source elec-trode of said first transistor and a drain electrode of said second transistor, said second resistor electrically con-necting a gate electrode of said first transistor and a drain electrode of said third transistor, an input current flowing through a source electrode of said first transis-tor.

The gallium nitride amplifier circuit electrically con-necting a charge division module, comprising: receiving a first current, a second current, a third current and a fourth current; and outputting a first voltage, a second voltage, a third voltage and a fourth voltage, wherein a bandwidth range of said gallium nitride ampli-fier circuit comprises 0 MHZ to 200 MHZ.

A gallium nitride amplifier circuit, wherein said gallium nitride amplifier circuit accepts a plurality of currents and outputs a plurality of voltages, and B₂ wherein said gallium nitride amplifier circuit comprises a first transistor, a second transistor, a third transistor, a first resistor and a second resistor, said first resistor electrically connecting said second resistor and a drain electrode of said first transistor, a gate electrode of said third transistor electrically connecting a source elec-trode of said first transistor and a drain electrode of said second transistor, said second resistor electrically con-necting a gate electrode of said first transistor and a drain electrode of said third transistor, an input current flowing through a source electrode of said first transis-tor.

The gallium nitride amplifier circuit electrically con-necting a charge division module, comprising: receiving a first current, a second current, a third current and a fourth current; and outputting a first voltage, a second voltage, a third voltage and a fourth voltage, wherein a bandwidth range of said gallium nitride ampli-fier circuit comprises 0 MHZ to 200 MHZ.

A gallium nitride amplifier circuit, wherein said gallium nitride amplifier circuit accepts a plurality of currents and outputs a plurality of voltages, and B₂ wherein said gallium nitride amplifier circuit comprises a first transistor, a second transistor, a third transistor, a first resistor and a second resistor, said first resistor electrically connecting said second resistor and a drain electrode of said first transistor, a gate electrode of said third transistor electrically connecting a source elec-trode of said first transistor and a drain electrode of said second transistor, said second resistor electrically con-necting a gate electrode of said first transistor and a drain electrode of said third transistor, an input current flowing through a source electrode of said first transis-tor.

The gallium nitride amplifier circuit electrically con-necting a charge division module, comprising: receiving a first current, a second current, a third current and a fourth current; and outputting a first voltage, a second voltage, a third voltage and a fourth voltage, wherein a bandwidth range of said gallium nitride ampli-fier circuit comprises 0 MHZ to 200 MHZ.

A gallium nitride amplifier circuit, wherein said gallium nitride amplifier circuit accepts a plurality of currents and outputs a plurality of voltages, and B₂ wherein said gallium nitride amplifier circuit comprises a first transistor, a second transistor, a third transistor, a first resistor and a second resistor, said first resistor electrically connecting said second resistor and a drain electrode of said first transistor, a gate electrode of said third transistor electrically connecting a source elec-trode of said first transistor and a drain electrode of said second transistor, said second resistor electrically con-necting a gate electrode of said first transistor and a drain electrode of said third transistor, an input current flowing through a source electrode of said first transis-tor.

The gallium nitride amplifier circuit electrically con-necting a charge division module, comprising: receiving a first current, a second current, a third current and a fourth current; and outputting a first voltage, a second voltage, a third voltage and a fourth voltage, wherein a bandwidth range of said gallium nitride ampli-fier circuit comprises 0 MHZ to 200 MHZ.