Patent
US 9,156,701sub-stoichiometric graphene oxide
C2.0H0.75O0.77
graphite
O:C ratio of basal plane material | 0.3 to 0.5 O:C ratio | graphite oxide |
— | 1.2–1.8 eV | — |
— | 3.8–4.3 eV | — |
— | 0.1–4 eV | — |
— | 285–286.2 eV | — |
— | 0.22–0.5 eV | — |
MASS PRODUCTION OF PRISTINE NANO GRAPHENE MATERIALS
sub-stoichiometric graphene oxide
C2.0H0.75O0.77
graphite
O:C ratio of basal plane material | 0.3 to 0.5 O:C ratio | graphite oxide |
— | 1.2–1.8 eV | — |
— | 3.8–4.3 eV | — |
— | 0.1–4 eV | — |
— | 285–286.2 eV | — |
— | 0.22–0.5 eV | — |
MASS PRODUCTION OF PRISTINE NANO GRAPHENE MATERIALS
sub-stoichiometric graphene oxide
C2.0H0.75O0.77
graphite
O:C ratio of basal plane material | 0.3 to 0.5 O:C ratio | graphite oxide |
— | 1.2–1.8 eV | — |
— | 3.8–4.3 eV | — |
— | 0.1–4 eV | — |
— | 285–286.2 eV | — |
— | 0.22–0.5 eV | — |
MASS PRODUCTION OF PRISTINE NANO GRAPHENE MATERIALS
sub-stoichiometric graphene oxide
C2.0H0.75O0.77
graphite
O:C ratio of basal plane material | 0.3 to 0.5 O:C ratio | graphite oxide |
— | 1.2–1.8 eV | — |
— | 3.8–4.3 eV | — |
— | 0.1–4 eV | — |
— | 285–286.2 eV | — |
— | 0.22–0.5 eV | — |
MASS PRODUCTION OF PRISTINE NANO GRAPHENE MATERIALS