Patent
US 9,515,144FIN-TYPE GRAPHENE DEVICE
Minhyun LEE
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,515,144Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a graphene device according to an example embodiment; [0021]
FIG. 2 is a cross-sectional view taken along line Il-Il of
FIG. 3 is a cross- sectional view taken along line Ill-Ill of
FIGS. 4A through 4G are perspective views for explaining a method of manufacturing a graphene device according to an example embodiment; [0024]
FIG. 5 is a cross-sectional view of a structure of a graphene device according to another example embodiment; [0025]
FIG. 6 is a cross-sectional view of a graphene device according to another example embodiment; [0026]
FIG. 7 is a cross-sectional view taken along line VII-VII of
FIG. 8 is a cross- sectional view taken along line VIII-VIII of
FIG. 9 is a cross-sectional view of a graphene device according to another example embodiment; [0029]
FIG. 10 is a cross-sectional view of a graphene device according to another example embodiment; [0030]
FIG. 11 is a cross-sectional view taken along line XI-XI of
FIG. 12 is a cross-sectional view taken along line XII-XII of
FIG. 13 is a cross-sectional view of a graphene device according to another example embodiment; [0033]
FIG. 14 is a cross-sectional view taken along line XIV-XIV of
FIG. 15 is a cross-sectional view taken along line XV-XV of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: a substrate; a graphene channel layer substantially perpendicular to a longitudinal surface of the substrate; a gate insulating layer substantially covering only one side surface of the graphene channel layer; a gate electrode on the gate insulating layer; and a source electrode and a separate drain electrode from the source electrode, the source electrode and the separate drain electrode only on an other side surface of the graphene channel layer.
The graphene device of claim 1, wherein the graphene channel layer comprises a horizontal unit on a top part thereof, the horizontal unit extending substantially parallel to the longitudinal surface of the substrate in a direction of the other side surface of the graphene channel layer, and wherein the gate insulating layer and the gate electrode overlap the horizontal unit.
The graphene device of claim 1, wherein at least one of the source electrode and the drain electrode comprises Cu, Fe, Ni, Co, Pt, Ir, Pd, or Ru.
The graphene device of claim 1, wherein the graphene channel layer has a height less than about 10 nm, and the graphene device is a graphene field effect transistor.
The graphene device of claim 1, wherein the gate insulating layer comprises an extension unit extending on the surface of the substrate in a direction away from the one side surface of the graphene channel layer.
The graphene device of claim 1, further comprising: a second gate insulating layer on the substrate covering the gate insulating layer and the other side surface of the graphene channel layer; a second gate electrode on the second gate insulating layer; and a via metal in the second gate insulating layer electrically connecting the gate electrode and the second gate electrode.
The graphene device of claim 1, further comprising a second gate insulating layer covering the gate insulating layer and the other side surface of the graphene channel layer on the substrate, wherein the gate electrode covers the second gate insulating layer.
canceled
A graphene device comprising: a substrate; a graphene layer substantially perpendicular to a longitudinal surface of the substrate; Page 3 Application No. 14/747,243 Attorney Docket No. 2557S I -002302-US a gate insulating layer substantially covering only one side surface of the graphene layer; a gate electrode on the gate insulating layer; a source electrode only on an other side surface of the graphene la y er and a separate drain electrode only on an o ide f of the phene n l from the source electrode; and a semiconductor layer on the other side surface of the graphene layer facing the gate electrode and contacting the drain electrode, wherein the graphene layer is separated from the drain electrode by a first gap configured to prevent the graphene layer from electrically contacting the drain electrode.
The graphene device of claim 10, wherein the graphene layer comprises a horizontal unit extending from a top part of the graphene layer in a direction parallel to the longitudinal surface of the substrate.
The graphene device of claim 10, wherein at least one of the source electrode and the drain electrode comprises a catalyst metal for growing graphene.
The graphene device of claim 10, wherein the gate insulating layer comprises an extension unit extending on the surface of the substrate in a direction away from the graphene layer.
canceled
A graphene device comprising: a substrate; a graphene layer substantially perpendicular to a longitudinal surface of the substrate; a gate insulating layer substantially covering only one side surface of the graphene layer; a gate electrode on the gate insulating layer; a source electrode only on an other side surface of the graphene la y er and a separate drain electrode o aoher d f f the graphene ch an nel layer from the source electrode; a tunneling layer on the other side surface of the graphene layer facing the gate electrode; and a metal layer on the tunneling layer facing the graphene layer and electrically connected to the drain electrode, wherein the graphene layer is separated from the drain electrode by a first gap configured to prevent the graphene layer from electrically contacting the drain electrode.
The graphene device of claim 16, wherein the graphene layer comprises a horizontal unit extending from a top part of the graphene layer in a direction substantially parallel to the longitudinal surface of the substrate.
The graphene device of claim 16, wherein at least one of the source electrode and the drain electrode comprises a catalyst metal for growing graphene.
The graphene device of claim 16, wherein the gate insulating layer comprises an extension unit extending on the surface of the substrate in a direction away from the one side surface of the graphene ehaimel- layer.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
fin-type graphene field effect transistor
Materials described outside the worked examples.
graphene
catalyst metal for growing graphene
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–50 nm | — |
Thickness | 30–100 nm |
Patent
Atlas literature
Patent
US 9,515,144Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a graphene device according to an example embodiment; [0021]
FIG. 2 is a cross-sectional view taken along line Il-Il of
FIG. 3 is a cross- sectional view taken along line Ill-Ill of
FIGS. 4A through 4G are perspective views for explaining a method of manufacturing a graphene device according to an example embodiment; [0024]
FIG. 5 is a cross-sectional view of a structure of a graphene device according to another example embodiment; [0025]
FIG. 6 is a cross-sectional view of a graphene device according to another example embodiment; [0026]
FIG. 7 is a cross-sectional view taken along line VII-VII of
FIG. 8 is a cross- sectional view taken along line VIII-VIII of
FIG. 9 is a cross-sectional view of a graphene device according to another example embodiment; [0029]
FIG. 10 is a cross-sectional view of a graphene device according to another example embodiment; [0030]
FIG. 11 is a cross-sectional view taken along line XI-XI of
FIG. 12 is a cross-sectional view taken along line XII-XII of
FIG. 13 is a cross-sectional view of a graphene device according to another example embodiment; [0033]
FIG. 14 is a cross-sectional view taken along line XIV-XIV of
FIG. 15 is a cross-sectional view taken along line XV-XV of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: a substrate; a graphene channel layer substantially perpendicular to a longitudinal surface of the substrate; a gate insulating layer substantially covering only one side surface of the graphene channel layer; a gate electrode on the gate insulating layer; and a source electrode and a separate drain electrode from the source electrode, the source electrode and the separate drain electrode only on an other side surface of the graphene channel layer.
The graphene device of claim 1, wherein the graphene channel layer comprises a horizontal unit on a top part thereof, the horizontal unit extending substantially parallel to the longitudinal surface of the substrate in a direction of the other side surface of the graphene channel layer, and wherein the gate insulating layer and the gate electrode overlap the horizontal unit.
The graphene device of claim 1, wherein at least one of the source electrode and the drain electrode comprises Cu, Fe, Ni, Co, Pt, Ir, Pd, or Ru.
The graphene device of claim 1, wherein the graphene channel layer has a height less than about 10 nm, and the graphene device is a graphene field effect transistor.
The graphene device of claim 1, wherein the gate insulating layer comprises an extension unit extending on the surface of the substrate in a direction away from the one side surface of the graphene channel layer.
The graphene device of claim 1, further comprising: a second gate insulating layer on the substrate covering the gate insulating layer and the other side surface of the graphene channel layer; a second gate electrode on the second gate insulating layer; and a via metal in the second gate insulating layer electrically connecting the gate electrode and the second gate electrode.
The graphene device of claim 1, further comprising a second gate insulating layer covering the gate insulating layer and the other side surface of the graphene channel layer on the substrate, wherein the gate electrode covers the second gate insulating layer.
canceled
A graphene device comprising: a substrate; a graphene layer substantially perpendicular to a longitudinal surface of the substrate; Page 3 Application No. 14/747,243 Attorney Docket No. 2557S I -002302-US a gate insulating layer substantially covering only one side surface of the graphene layer; a gate electrode on the gate insulating layer; a source electrode only on an other side surface of the graphene la y er and a separate drain electrode only on an o ide f of the phene n l from the source electrode; and a semiconductor layer on the other side surface of the graphene layer facing the gate electrode and contacting the drain electrode, wherein the graphene layer is separated from the drain electrode by a first gap configured to prevent the graphene layer from electrically contacting the drain electrode.
The graphene device of claim 10, wherein the graphene layer comprises a horizontal unit extending from a top part of the graphene layer in a direction parallel to the longitudinal surface of the substrate.
The graphene device of claim 10, wherein at least one of the source electrode and the drain electrode comprises a catalyst metal for growing graphene.
The graphene device of claim 10, wherein the gate insulating layer comprises an extension unit extending on the surface of the substrate in a direction away from the graphene layer.
canceled
A graphene device comprising: a substrate; a graphene layer substantially perpendicular to a longitudinal surface of the substrate; a gate insulating layer substantially covering only one side surface of the graphene layer; a gate electrode on the gate insulating layer; a source electrode only on an other side surface of the graphene la y er and a separate drain electrode o aoher d f f the graphene ch an nel layer from the source electrode; a tunneling layer on the other side surface of the graphene layer facing the gate electrode; and a metal layer on the tunneling layer facing the graphene layer and electrically connected to the drain electrode, wherein the graphene layer is separated from the drain electrode by a first gap configured to prevent the graphene layer from electrically contacting the drain electrode.
The graphene device of claim 16, wherein the graphene layer comprises a horizontal unit extending from a top part of the graphene layer in a direction substantially parallel to the longitudinal surface of the substrate.
The graphene device of claim 16, wherein at least one of the source electrode and the drain electrode comprises a catalyst metal for growing graphene.
The graphene device of claim 16, wherein the gate insulating layer comprises an extension unit extending on the surface of the substrate in a direction away from the one side surface of the graphene ehaimel- layer.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
fin-type graphene field effect transistor
Materials described outside the worked examples.
graphene
catalyst metal for growing graphene
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–50 nm | — |
Thickness | 30–100 nm |
Patent
Atlas literature
Patent
US 9,515,144Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a graphene device according to an example embodiment; [0021]
FIG. 2 is a cross-sectional view taken along line Il-Il of
FIG. 3 is a cross- sectional view taken along line Ill-Ill of
FIGS. 4A through 4G are perspective views for explaining a method of manufacturing a graphene device according to an example embodiment; [0024]
FIG. 5 is a cross-sectional view of a structure of a graphene device according to another example embodiment; [0025]
FIG. 6 is a cross-sectional view of a graphene device according to another example embodiment; [0026]
FIG. 7 is a cross-sectional view taken along line VII-VII of
FIG. 8 is a cross- sectional view taken along line VIII-VIII of
FIG. 9 is a cross-sectional view of a graphene device according to another example embodiment; [0029]
FIG. 10 is a cross-sectional view of a graphene device according to another example embodiment; [0030]
FIG. 11 is a cross-sectional view taken along line XI-XI of
FIG. 12 is a cross-sectional view taken along line XII-XII of
FIG. 13 is a cross-sectional view of a graphene device according to another example embodiment; [0033]
FIG. 14 is a cross-sectional view taken along line XIV-XIV of
FIG. 15 is a cross-sectional view taken along line XV-XV of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: a substrate; a graphene channel layer substantially perpendicular to a longitudinal surface of the substrate; a gate insulating layer substantially covering only one side surface of the graphene channel layer; a gate electrode on the gate insulating layer; and a source electrode and a separate drain electrode from the source electrode, the source electrode and the separate drain electrode only on an other side surface of the graphene channel layer.
The graphene device of claim 1, wherein the graphene channel layer comprises a horizontal unit on a top part thereof, the horizontal unit extending substantially parallel to the longitudinal surface of the substrate in a direction of the other side surface of the graphene channel layer, and wherein the gate insulating layer and the gate electrode overlap the horizontal unit.
The graphene device of claim 1, wherein at least one of the source electrode and the drain electrode comprises Cu, Fe, Ni, Co, Pt, Ir, Pd, or Ru.
The graphene device of claim 1, wherein the graphene channel layer has a height less than about 10 nm, and the graphene device is a graphene field effect transistor.
The graphene device of claim 1, wherein the gate insulating layer comprises an extension unit extending on the surface of the substrate in a direction away from the one side surface of the graphene channel layer.
The graphene device of claim 1, further comprising: a second gate insulating layer on the substrate covering the gate insulating layer and the other side surface of the graphene channel layer; a second gate electrode on the second gate insulating layer; and a via metal in the second gate insulating layer electrically connecting the gate electrode and the second gate electrode.
The graphene device of claim 1, further comprising a second gate insulating layer covering the gate insulating layer and the other side surface of the graphene channel layer on the substrate, wherein the gate electrode covers the second gate insulating layer.
canceled
A graphene device comprising: a substrate; a graphene layer substantially perpendicular to a longitudinal surface of the substrate; Page 3 Application No. 14/747,243 Attorney Docket No. 2557S I -002302-US a gate insulating layer substantially covering only one side surface of the graphene layer; a gate electrode on the gate insulating layer; a source electrode only on an other side surface of the graphene la y er and a separate drain electrode only on an o ide f of the phene n l from the source electrode; and a semiconductor layer on the other side surface of the graphene layer facing the gate electrode and contacting the drain electrode, wherein the graphene layer is separated from the drain electrode by a first gap configured to prevent the graphene layer from electrically contacting the drain electrode.
The graphene device of claim 10, wherein the graphene layer comprises a horizontal unit extending from a top part of the graphene layer in a direction parallel to the longitudinal surface of the substrate.
The graphene device of claim 10, wherein at least one of the source electrode and the drain electrode comprises a catalyst metal for growing graphene.
The graphene device of claim 10, wherein the gate insulating layer comprises an extension unit extending on the surface of the substrate in a direction away from the graphene layer.
canceled
A graphene device comprising: a substrate; a graphene layer substantially perpendicular to a longitudinal surface of the substrate; a gate insulating layer substantially covering only one side surface of the graphene layer; a gate electrode on the gate insulating layer; a source electrode only on an other side surface of the graphene la y er and a separate drain electrode o aoher d f f the graphene ch an nel layer from the source electrode; a tunneling layer on the other side surface of the graphene layer facing the gate electrode; and a metal layer on the tunneling layer facing the graphene layer and electrically connected to the drain electrode, wherein the graphene layer is separated from the drain electrode by a first gap configured to prevent the graphene layer from electrically contacting the drain electrode.
The graphene device of claim 16, wherein the graphene layer comprises a horizontal unit extending from a top part of the graphene layer in a direction substantially parallel to the longitudinal surface of the substrate.
The graphene device of claim 16, wherein at least one of the source electrode and the drain electrode comprises a catalyst metal for growing graphene.
The graphene device of claim 16, wherein the gate insulating layer comprises an extension unit extending on the surface of the substrate in a direction away from the one side surface of the graphene ehaimel- layer.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
fin-type graphene field effect transistor
Materials described outside the worked examples.
graphene
catalyst metal for growing graphene
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–50 nm | — |
Thickness | 30–100 nm |
Patent
Atlas literature
Patent
US 9,515,144Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a graphene device according to an example embodiment; [0021]
FIG. 2 is a cross-sectional view taken along line Il-Il of
FIG. 3 is a cross- sectional view taken along line Ill-Ill of
FIGS. 4A through 4G are perspective views for explaining a method of manufacturing a graphene device according to an example embodiment; [0024]
FIG. 5 is a cross-sectional view of a structure of a graphene device according to another example embodiment; [0025]
FIG. 6 is a cross-sectional view of a graphene device according to another example embodiment; [0026]
FIG. 7 is a cross-sectional view taken along line VII-VII of
FIG. 8 is a cross- sectional view taken along line VIII-VIII of
FIG. 9 is a cross-sectional view of a graphene device according to another example embodiment; [0029]
FIG. 10 is a cross-sectional view of a graphene device according to another example embodiment; [0030]
FIG. 11 is a cross-sectional view taken along line XI-XI of
FIG. 12 is a cross-sectional view taken along line XII-XII of
FIG. 13 is a cross-sectional view of a graphene device according to another example embodiment; [0033]
FIG. 14 is a cross-sectional view taken along line XIV-XIV of
FIG. 15 is a cross-sectional view taken along line XV-XV of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: a substrate; a graphene channel layer substantially perpendicular to a longitudinal surface of the substrate; a gate insulating layer substantially covering only one side surface of the graphene channel layer; a gate electrode on the gate insulating layer; and a source electrode and a separate drain electrode from the source electrode, the source electrode and the separate drain electrode only on an other side surface of the graphene channel layer.
The graphene device of claim 1, wherein the graphene channel layer comprises a horizontal unit on a top part thereof, the horizontal unit extending substantially parallel to the longitudinal surface of the substrate in a direction of the other side surface of the graphene channel layer, and wherein the gate insulating layer and the gate electrode overlap the horizontal unit.
The graphene device of claim 1, wherein at least one of the source electrode and the drain electrode comprises Cu, Fe, Ni, Co, Pt, Ir, Pd, or Ru.
The graphene device of claim 1, wherein the graphene channel layer has a height less than about 10 nm, and the graphene device is a graphene field effect transistor.
The graphene device of claim 1, wherein the gate insulating layer comprises an extension unit extending on the surface of the substrate in a direction away from the one side surface of the graphene channel layer.
The graphene device of claim 1, further comprising: a second gate insulating layer on the substrate covering the gate insulating layer and the other side surface of the graphene channel layer; a second gate electrode on the second gate insulating layer; and a via metal in the second gate insulating layer electrically connecting the gate electrode and the second gate electrode.
The graphene device of claim 1, further comprising a second gate insulating layer covering the gate insulating layer and the other side surface of the graphene channel layer on the substrate, wherein the gate electrode covers the second gate insulating layer.
canceled
A graphene device comprising: a substrate; a graphene layer substantially perpendicular to a longitudinal surface of the substrate; Page 3 Application No. 14/747,243 Attorney Docket No. 2557S I -002302-US a gate insulating layer substantially covering only one side surface of the graphene layer; a gate electrode on the gate insulating layer; a source electrode only on an other side surface of the graphene la y er and a separate drain electrode only on an o ide f of the phene n l from the source electrode; and a semiconductor layer on the other side surface of the graphene layer facing the gate electrode and contacting the drain electrode, wherein the graphene layer is separated from the drain electrode by a first gap configured to prevent the graphene layer from electrically contacting the drain electrode.
The graphene device of claim 10, wherein the graphene layer comprises a horizontal unit extending from a top part of the graphene layer in a direction parallel to the longitudinal surface of the substrate.
The graphene device of claim 10, wherein at least one of the source electrode and the drain electrode comprises a catalyst metal for growing graphene.
The graphene device of claim 10, wherein the gate insulating layer comprises an extension unit extending on the surface of the substrate in a direction away from the graphene layer.
canceled
A graphene device comprising: a substrate; a graphene layer substantially perpendicular to a longitudinal surface of the substrate; a gate insulating layer substantially covering only one side surface of the graphene layer; a gate electrode on the gate insulating layer; a source electrode only on an other side surface of the graphene la y er and a separate drain electrode o aoher d f f the graphene ch an nel layer from the source electrode; a tunneling layer on the other side surface of the graphene layer facing the gate electrode; and a metal layer on the tunneling layer facing the graphene layer and electrically connected to the drain electrode, wherein the graphene layer is separated from the drain electrode by a first gap configured to prevent the graphene layer from electrically contacting the drain electrode.
The graphene device of claim 16, wherein the graphene layer comprises a horizontal unit extending from a top part of the graphene layer in a direction substantially parallel to the longitudinal surface of the substrate.
The graphene device of claim 16, wherein at least one of the source electrode and the drain electrode comprises a catalyst metal for growing graphene.
The graphene device of claim 16, wherein the gate insulating layer comprises an extension unit extending on the surface of the substrate in a direction away from the one side surface of the graphene ehaimel- layer.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
fin-type graphene field effect transistor
Materials described outside the worked examples.
graphene
catalyst metal for growing graphene
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–50 nm | — |
Thickness | 30–100 nm |
fin-type graphene device with semiconductor layer
fin-type graphene device with tunneling layer
semiconductor layer
tunneling layer
| — |
Thickness | 1–30 nm | — |
Thickness | ≤ 10 nm | — |
fin-type graphene device with semiconductor layer
fin-type graphene device with tunneling layer
semiconductor layer
tunneling layer
| — |
Thickness | 1–30 nm | — |
Thickness | ≤ 10 nm | — |
fin-type graphene device with semiconductor layer
fin-type graphene device with tunneling layer
semiconductor layer
tunneling layer
| — |
Thickness | 1–30 nm | — |
Thickness | ≤ 10 nm | — |
fin-type graphene device with semiconductor layer
fin-type graphene device with tunneling layer
semiconductor layer
tunneling layer
| — |
Thickness | 1–30 nm | — |
Thickness | ≤ 10 nm | — |