Patent
US 9,012,889FIELD EFFECT TRANSISTOR USING GRAPHENE, PHOSPHORUS-DOPED GRAPHENE, AND METHODS OF PRODUCING THE SAME
Hyoyoung LEE
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,012,889Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, a graphene channel layer 500 is formed so as to be electrically connected to the so urce electrode 300 and the drain electrode 400. The distance …
FIGS. 2D and 2E illustrate electron transfer characteristics of graphene before thermal annealing in both cases when the graphene is doped with nitrogen and …
FIGS. 3A to 3H illustrate electron transfer characteristics (I d- Vg) of an example of a phosphorus-doped field effect transistor and an example of a …
FIGS. 4A and 4B illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure. [0037]
FIGS. 5A to 5D illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure:
FIG. 6B illustrates an electron transfer characteristic (I d- Vg) of a phosphorus-doped monolayer field effect transistor measured in the air. [0041]
FIGS. 7A and 7B are graphs showing the stability of a field effect transistor in accordance with an example of the present disclosure:
FIGS. 8A to 8C are scanning electron microscope (SEM) images of field effect transistors in accordance with an example of the present disclosure. [0043]
FIGS. 9A to 9C are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0044]
FIGS. 10 A to 10 B are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0045] Throughout the drawings …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently amended) A field effect transistor, comprising: a source electrode and a drain electrode disposed on a substrate; and a channel layer comprising a phosphorus-doped graphene, the channel layer electrically connected to the source electrode and the drain electrode, wherein the phosphorus-doped graphene is doped by substitution at an oxygen-binding site of the graphene with phosphorus, wherein the channel layer comprises a double layer of graphene with phosphorus between the double la yers.
The field effect transistor of claim 1, further comprising an oxide film disposed between the substrate and the channel layer.
The field effect transistor of claim 1, wherein the channel layer is obtained by performing doping on a graphene material using one selected from the group consisting of a triphenyl group-containing phosphorus compound, P₄ 0 4, H₃PO4, PF3, P Cl 3, PBr3, P I 3, PF 5, P C5, PBr 5, P Is, phosphine(PH₃), diphosphane(H 2PPH₂), diphosphine [R₂ PPR2, R₂P(CH₂) n PR2], diphosphene(HP = PH), diphosphenes(R-P = P-R), phosphine oxide(R₃P =0), phosphorane(PR s, R₃P = CR₂), phosphinite [P(OR)R2], phosphonite [P(OR)2R], phosphate [P(OR)3], phosphinate [R₂ P(RO)O], phosphonate [RP(RO)2 0], phosphate [P(RO)3 0], and their combinations as a precursor.
(Cu rr ently amended) The field effect transistor of claim 1, wherein the -chnne-aye-i-s-a due phosphorus-doped g raphene comprises multiple la yers.
The field effect transistor of claim 1, wherein a content of phosphorus in the phosphorus-doped graphene is 0.1 wt% or greater and 30 wt% or less. 2 Application No. 13/960,996
The field effect transistor of claim 1, wherein the source electrode and the drain electrode independently include one selected from the group consisting of A u, Al, Ag, Be, Bi, Co, Cu, Cr, Hf, In, Mn, Mo, Mg, Ni, Nb, Pb, Pd, Pt, Rh, Re, Ru, Sb, Ta, Te, Ti, V, W, Zr, Zn, and their combinations.
The field effect transistor of claim 1, wherein the substrate comprises silicon, glass, or quartz.
The field effect transistor of claim 1, wherein the substrate comprises a flexible substrate, a transparent substrate, or a flexible and transparent substrate.
The field effect transistor of claim 1, wherein phosphorus-doped graphene.
(Cu rr ently amended) A method of producing a field effect transistor, comprising: forming a source electrode and a drain electrode on a substrate; forming a channel layer including a phosphorus-doped graphene, the channel layer electrically connected to the source electrode and the drain electrode, wherein the phosphorus- doped graphene is doped by substitution at an oxygen-binding site of the graphene with phosphorus, the method further comprising doping a graphene material to obtain the phosphorus- doped graphene, wherein the doping is performed between double layers of a graphene film.
The method of claim 9, further comprising forming an oxide film on the substrate before forming the channel layer.
The method of claim 9, further comprising forming the channel layer by doping a graphene material with one selected from the group consisting of a triphenyl group- containing phosphorus compound, P₄ O 4, H₃PO4, PF3, PC l 3, PBr3, P I 3, PF 5, PC l5, PBr 5, P Is, phosphine(PH₃), diphosphane(H 2 PPH₂), diphosphine [R₂ PPR2, R₂P(CH₂) n PR2], diphosphene(HP = PH), diphosphenes(R-P = P-R), phosphine oxide(R₃P =0), phosphorane(PR 5, R₃P = CR₂), phosphinite [P(OR)R2], phosphonite [P(OR)2R], phosphate [P(OR)3], phosphinate [R₂ P(RO)O], phosphonate [RP(RO)2 0], phosphate [P(RO)3 0], and their combinations as a precursor. 3 Application No. 13/960,996
The method of claim 9, f wherein the doping is performed between do lr a p phosphorus-doped graphene comprises multiple la yers.
The method of claim 9, wherein a content of phosphorus in the phosphorus- doped graphene is 0.1 wt% or greater and 30 wt% or less.
The method of claim 9, wherein the source electrode and the drain electrode independently include one selected from the group consisting of A u, Al, Ag, Be, Bi, Co, Cu, Cr, Hf, In, Mn, Mo, Mg, Ni, Nb, Pb, Pd, Pt, Rh, Re, Ru, Sb, Ta, Te, Ti, V, W, Zr, Zn, and their combinations.
The method of claim 9, wherein the substrate comprises silicon, glass, or quartz.
The method of claim 9, wherein the substrate comprises a flexible substrate or a transparent flexible substrate.
The method of claim 9, wherein the doped graphene.
A method of preparing a phosphorus-doped graphene, comprising: injecting a precursor including a phosphorus compound into a graphene material, wherein the phosphorus compound is in a gas phase, a liquid phase, or a state of being dissolved in a solvent; and heating the precursor-injected graphene materia l, the method further comprising doping a graphene material to obtain the phosphorus- doped graphene, wherein the doping is performed between double layers of a graphene film.
The method of claim 17, wherein the graphene material comprises a graphene manufactured by chemical vapor deposition method, a graphene oxide, or a reduced graphene oxide. 4 Application No. 13/960,996
The method of claim 17, wherein the phosphorus compound includes one selected from the group consisting of a triphenyl group-containing phosphorus compound, P₄ 04, H₃P O 4, PF3, P Cl 3, PBr3, P I 3, PF S, P Cls, PBr s, P Is, phosphine(PH₃), diphosphane(H₂PPH₂), diphosphine [R₂PPR2, R₂P(CH₂) n PR2], diphosphene(HP=PH), diphosphenes(R-P=P-R), phosphine oxide(R₃P= 0), phosphorane(PR s, R₃P=CR₂), phosphinite [P(OR)R2], phosphonite [P(OR)2R], phosphate [P(OR)3], phosphinate [R₂P(RO)O], phosphonate [RP(RO)20], phosphate [P(RO)30], and their combinations.
The method of claim 17, further comprising graphene material by thermal annealing.
The method of claim 17, wherein the injecting pre-cursor injected graphene material is higher graphene material.
The method of claim 17, wherein the method of claim 17. shifting the Dirac point of the precursor-injected is adjusted such that the gate voltage of the than the Dirac voltage of the pre-cursor injected the phosphorus- doped graphene is an annealed phosphorus-doped graphene is an annealed phosphorus-phosphorus-doped graphene comprises multiple layers.
A phosphorus-doped graphene prepared by the
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor
Materials described outside the worked examples.
phosphorus-doped graphene
phosphorus precursor compound
CVD graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B, a graphene channel layer 500 is formed so as to be electrically connected to the so urce electrode 300 and the drain electrode 400. The distance …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
phosphorus content in phosphorus-doped graphene | 0.1–30 wt% | phosphorus-doped graphene |
Thickness | 21–29 nm |
Table 1
Amounts of phosphorus and nitroge n (atom %) within double- layer
nd the phosphorus obtained by XPS were found to be about 5.05 % and about 4.96 %, respectively, as shown in Table 1.
p. 15
Table 2
SVG
As shown in Table 2, after the thermal annealing was conducted, the phosphorus
p. 17
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Patent
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US 9,012,889Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, a graphene channel layer 500 is formed so as to be electrically connected to the so urce electrode 300 and the drain electrode 400. The distance …
FIGS. 2D and 2E illustrate electron transfer characteristics of graphene before thermal annealing in both cases when the graphene is doped with nitrogen and …
FIGS. 3A to 3H illustrate electron transfer characteristics (I d- Vg) of an example of a phosphorus-doped field effect transistor and an example of a …
FIGS. 4A and 4B illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure. [0037]
FIGS. 5A to 5D illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure:
FIG. 6B illustrates an electron transfer characteristic (I d- Vg) of a phosphorus-doped monolayer field effect transistor measured in the air. [0041]
FIGS. 7A and 7B are graphs showing the stability of a field effect transistor in accordance with an example of the present disclosure:
FIGS. 8A to 8C are scanning electron microscope (SEM) images of field effect transistors in accordance with an example of the present disclosure. [0043]
FIGS. 9A to 9C are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0044]
FIGS. 10 A to 10 B are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0045] Throughout the drawings …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently amended) A field effect transistor, comprising: a source electrode and a drain electrode disposed on a substrate; and a channel layer comprising a phosphorus-doped graphene, the channel layer electrically connected to the source electrode and the drain electrode, wherein the phosphorus-doped graphene is doped by substitution at an oxygen-binding site of the graphene with phosphorus, wherein the channel layer comprises a double layer of graphene with phosphorus between the double la yers.
The field effect transistor of claim 1, further comprising an oxide film disposed between the substrate and the channel layer.
The field effect transistor of claim 1, wherein the channel layer is obtained by performing doping on a graphene material using one selected from the group consisting of a triphenyl group-containing phosphorus compound, P₄ 0 4, H₃PO4, PF3, P Cl 3, PBr3, P I 3, PF 5, P C5, PBr 5, P Is, phosphine(PH₃), diphosphane(H 2PPH₂), diphosphine [R₂ PPR2, R₂P(CH₂) n PR2], diphosphene(HP = PH), diphosphenes(R-P = P-R), phosphine oxide(R₃P =0), phosphorane(PR s, R₃P = CR₂), phosphinite [P(OR)R2], phosphonite [P(OR)2R], phosphate [P(OR)3], phosphinate [R₂ P(RO)O], phosphonate [RP(RO)2 0], phosphate [P(RO)3 0], and their combinations as a precursor.
(Cu rr ently amended) The field effect transistor of claim 1, wherein the -chnne-aye-i-s-a due phosphorus-doped g raphene comprises multiple la yers.
The field effect transistor of claim 1, wherein a content of phosphorus in the phosphorus-doped graphene is 0.1 wt% or greater and 30 wt% or less. 2 Application No. 13/960,996
The field effect transistor of claim 1, wherein the source electrode and the drain electrode independently include one selected from the group consisting of A u, Al, Ag, Be, Bi, Co, Cu, Cr, Hf, In, Mn, Mo, Mg, Ni, Nb, Pb, Pd, Pt, Rh, Re, Ru, Sb, Ta, Te, Ti, V, W, Zr, Zn, and their combinations.
The field effect transistor of claim 1, wherein the substrate comprises silicon, glass, or quartz.
The field effect transistor of claim 1, wherein the substrate comprises a flexible substrate, a transparent substrate, or a flexible and transparent substrate.
The field effect transistor of claim 1, wherein phosphorus-doped graphene.
(Cu rr ently amended) A method of producing a field effect transistor, comprising: forming a source electrode and a drain electrode on a substrate; forming a channel layer including a phosphorus-doped graphene, the channel layer electrically connected to the source electrode and the drain electrode, wherein the phosphorus- doped graphene is doped by substitution at an oxygen-binding site of the graphene with phosphorus, the method further comprising doping a graphene material to obtain the phosphorus- doped graphene, wherein the doping is performed between double layers of a graphene film.
The method of claim 9, further comprising forming an oxide film on the substrate before forming the channel layer.
The method of claim 9, further comprising forming the channel layer by doping a graphene material with one selected from the group consisting of a triphenyl group- containing phosphorus compound, P₄ O 4, H₃PO4, PF3, PC l 3, PBr3, P I 3, PF 5, PC l5, PBr 5, P Is, phosphine(PH₃), diphosphane(H 2 PPH₂), diphosphine [R₂ PPR2, R₂P(CH₂) n PR2], diphosphene(HP = PH), diphosphenes(R-P = P-R), phosphine oxide(R₃P =0), phosphorane(PR 5, R₃P = CR₂), phosphinite [P(OR)R2], phosphonite [P(OR)2R], phosphate [P(OR)3], phosphinate [R₂ P(RO)O], phosphonate [RP(RO)2 0], phosphate [P(RO)3 0], and their combinations as a precursor. 3 Application No. 13/960,996
The method of claim 9, f wherein the doping is performed between do lr a p phosphorus-doped graphene comprises multiple la yers.
The method of claim 9, wherein a content of phosphorus in the phosphorus- doped graphene is 0.1 wt% or greater and 30 wt% or less.
The method of claim 9, wherein the source electrode and the drain electrode independently include one selected from the group consisting of A u, Al, Ag, Be, Bi, Co, Cu, Cr, Hf, In, Mn, Mo, Mg, Ni, Nb, Pb, Pd, Pt, Rh, Re, Ru, Sb, Ta, Te, Ti, V, W, Zr, Zn, and their combinations.
The method of claim 9, wherein the substrate comprises silicon, glass, or quartz.
The method of claim 9, wherein the substrate comprises a flexible substrate or a transparent flexible substrate.
The method of claim 9, wherein the doped graphene.
A method of preparing a phosphorus-doped graphene, comprising: injecting a precursor including a phosphorus compound into a graphene material, wherein the phosphorus compound is in a gas phase, a liquid phase, or a state of being dissolved in a solvent; and heating the precursor-injected graphene materia l, the method further comprising doping a graphene material to obtain the phosphorus- doped graphene, wherein the doping is performed between double layers of a graphene film.
The method of claim 17, wherein the graphene material comprises a graphene manufactured by chemical vapor deposition method, a graphene oxide, or a reduced graphene oxide. 4 Application No. 13/960,996
The method of claim 17, wherein the phosphorus compound includes one selected from the group consisting of a triphenyl group-containing phosphorus compound, P₄ 04, H₃P O 4, PF3, P Cl 3, PBr3, P I 3, PF S, P Cls, PBr s, P Is, phosphine(PH₃), diphosphane(H₂PPH₂), diphosphine [R₂PPR2, R₂P(CH₂) n PR2], diphosphene(HP=PH), diphosphenes(R-P=P-R), phosphine oxide(R₃P= 0), phosphorane(PR s, R₃P=CR₂), phosphinite [P(OR)R2], phosphonite [P(OR)2R], phosphate [P(OR)3], phosphinate [R₂P(RO)O], phosphonate [RP(RO)20], phosphate [P(RO)30], and their combinations.
The method of claim 17, further comprising graphene material by thermal annealing.
The method of claim 17, wherein the injecting pre-cursor injected graphene material is higher graphene material.
The method of claim 17, wherein the method of claim 17. shifting the Dirac point of the precursor-injected is adjusted such that the gate voltage of the than the Dirac voltage of the pre-cursor injected the phosphorus- doped graphene is an annealed phosphorus-doped graphene is an annealed phosphorus-phosphorus-doped graphene comprises multiple layers.
A phosphorus-doped graphene prepared by the
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor
Materials described outside the worked examples.
phosphorus-doped graphene
phosphorus precursor compound
CVD graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B, a graphene channel layer 500 is formed so as to be electrically connected to the so urce electrode 300 and the drain electrode 400. The distance …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
phosphorus content in phosphorus-doped graphene | 0.1–30 wt% | phosphorus-doped graphene |
Thickness | 21–29 nm |
Table 1
Amounts of phosphorus and nitroge n (atom %) within double- layer
nd the phosphorus obtained by XPS were found to be about 5.05 % and about 4.96 %, respectively, as shown in Table 1.
p. 15
Table 2
SVG
As shown in Table 2, after the thermal annealing was conducted, the phosphorus
p. 17
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US 9,012,889Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, a graphene channel layer 500 is formed so as to be electrically connected to the so urce electrode 300 and the drain electrode 400. The distance …
FIGS. 2D and 2E illustrate electron transfer characteristics of graphene before thermal annealing in both cases when the graphene is doped with nitrogen and …
FIGS. 3A to 3H illustrate electron transfer characteristics (I d- Vg) of an example of a phosphorus-doped field effect transistor and an example of a …
FIGS. 4A and 4B illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure. [0037]
FIGS. 5A to 5D illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure:
FIG. 6B illustrates an electron transfer characteristic (I d- Vg) of a phosphorus-doped monolayer field effect transistor measured in the air. [0041]
FIGS. 7A and 7B are graphs showing the stability of a field effect transistor in accordance with an example of the present disclosure:
FIGS. 8A to 8C are scanning electron microscope (SEM) images of field effect transistors in accordance with an example of the present disclosure. [0043]
FIGS. 9A to 9C are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0044]
FIGS. 10 A to 10 B are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0045] Throughout the drawings …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently amended) A field effect transistor, comprising: a source electrode and a drain electrode disposed on a substrate; and a channel layer comprising a phosphorus-doped graphene, the channel layer electrically connected to the source electrode and the drain electrode, wherein the phosphorus-doped graphene is doped by substitution at an oxygen-binding site of the graphene with phosphorus, wherein the channel layer comprises a double layer of graphene with phosphorus between the double la yers.
The field effect transistor of claim 1, further comprising an oxide film disposed between the substrate and the channel layer.
The field effect transistor of claim 1, wherein the channel layer is obtained by performing doping on a graphene material using one selected from the group consisting of a triphenyl group-containing phosphorus compound, P₄ 0 4, H₃PO4, PF3, P Cl 3, PBr3, P I 3, PF 5, P C5, PBr 5, P Is, phosphine(PH₃), diphosphane(H 2PPH₂), diphosphine [R₂ PPR2, R₂P(CH₂) n PR2], diphosphene(HP = PH), diphosphenes(R-P = P-R), phosphine oxide(R₃P =0), phosphorane(PR s, R₃P = CR₂), phosphinite [P(OR)R2], phosphonite [P(OR)2R], phosphate [P(OR)3], phosphinate [R₂ P(RO)O], phosphonate [RP(RO)2 0], phosphate [P(RO)3 0], and their combinations as a precursor.
(Cu rr ently amended) The field effect transistor of claim 1, wherein the -chnne-aye-i-s-a due phosphorus-doped g raphene comprises multiple la yers.
The field effect transistor of claim 1, wherein a content of phosphorus in the phosphorus-doped graphene is 0.1 wt% or greater and 30 wt% or less. 2 Application No. 13/960,996
The field effect transistor of claim 1, wherein the source electrode and the drain electrode independently include one selected from the group consisting of A u, Al, Ag, Be, Bi, Co, Cu, Cr, Hf, In, Mn, Mo, Mg, Ni, Nb, Pb, Pd, Pt, Rh, Re, Ru, Sb, Ta, Te, Ti, V, W, Zr, Zn, and their combinations.
The field effect transistor of claim 1, wherein the substrate comprises silicon, glass, or quartz.
The field effect transistor of claim 1, wherein the substrate comprises a flexible substrate, a transparent substrate, or a flexible and transparent substrate.
The field effect transistor of claim 1, wherein phosphorus-doped graphene.
(Cu rr ently amended) A method of producing a field effect transistor, comprising: forming a source electrode and a drain electrode on a substrate; forming a channel layer including a phosphorus-doped graphene, the channel layer electrically connected to the source electrode and the drain electrode, wherein the phosphorus- doped graphene is doped by substitution at an oxygen-binding site of the graphene with phosphorus, the method further comprising doping a graphene material to obtain the phosphorus- doped graphene, wherein the doping is performed between double layers of a graphene film.
The method of claim 9, further comprising forming an oxide film on the substrate before forming the channel layer.
The method of claim 9, further comprising forming the channel layer by doping a graphene material with one selected from the group consisting of a triphenyl group- containing phosphorus compound, P₄ O 4, H₃PO4, PF3, PC l 3, PBr3, P I 3, PF 5, PC l5, PBr 5, P Is, phosphine(PH₃), diphosphane(H 2 PPH₂), diphosphine [R₂ PPR2, R₂P(CH₂) n PR2], diphosphene(HP = PH), diphosphenes(R-P = P-R), phosphine oxide(R₃P =0), phosphorane(PR 5, R₃P = CR₂), phosphinite [P(OR)R2], phosphonite [P(OR)2R], phosphate [P(OR)3], phosphinate [R₂ P(RO)O], phosphonate [RP(RO)2 0], phosphate [P(RO)3 0], and their combinations as a precursor. 3 Application No. 13/960,996
The method of claim 9, f wherein the doping is performed between do lr a p phosphorus-doped graphene comprises multiple la yers.
The method of claim 9, wherein a content of phosphorus in the phosphorus- doped graphene is 0.1 wt% or greater and 30 wt% or less.
The method of claim 9, wherein the source electrode and the drain electrode independently include one selected from the group consisting of A u, Al, Ag, Be, Bi, Co, Cu, Cr, Hf, In, Mn, Mo, Mg, Ni, Nb, Pb, Pd, Pt, Rh, Re, Ru, Sb, Ta, Te, Ti, V, W, Zr, Zn, and their combinations.
The method of claim 9, wherein the substrate comprises silicon, glass, or quartz.
The method of claim 9, wherein the substrate comprises a flexible substrate or a transparent flexible substrate.
The method of claim 9, wherein the doped graphene.
A method of preparing a phosphorus-doped graphene, comprising: injecting a precursor including a phosphorus compound into a graphene material, wherein the phosphorus compound is in a gas phase, a liquid phase, or a state of being dissolved in a solvent; and heating the precursor-injected graphene materia l, the method further comprising doping a graphene material to obtain the phosphorus- doped graphene, wherein the doping is performed between double layers of a graphene film.
The method of claim 17, wherein the graphene material comprises a graphene manufactured by chemical vapor deposition method, a graphene oxide, or a reduced graphene oxide. 4 Application No. 13/960,996
The method of claim 17, wherein the phosphorus compound includes one selected from the group consisting of a triphenyl group-containing phosphorus compound, P₄ 04, H₃P O 4, PF3, P Cl 3, PBr3, P I 3, PF S, P Cls, PBr s, P Is, phosphine(PH₃), diphosphane(H₂PPH₂), diphosphine [R₂PPR2, R₂P(CH₂) n PR2], diphosphene(HP=PH), diphosphenes(R-P=P-R), phosphine oxide(R₃P= 0), phosphorane(PR s, R₃P=CR₂), phosphinite [P(OR)R2], phosphonite [P(OR)2R], phosphate [P(OR)3], phosphinate [R₂P(RO)O], phosphonate [RP(RO)20], phosphate [P(RO)30], and their combinations.
The method of claim 17, further comprising graphene material by thermal annealing.
The method of claim 17, wherein the injecting pre-cursor injected graphene material is higher graphene material.
The method of claim 17, wherein the method of claim 17. shifting the Dirac point of the precursor-injected is adjusted such that the gate voltage of the than the Dirac voltage of the pre-cursor injected the phosphorus- doped graphene is an annealed phosphorus-doped graphene is an annealed phosphorus-phosphorus-doped graphene comprises multiple layers.
A phosphorus-doped graphene prepared by the
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor
Materials described outside the worked examples.
phosphorus-doped graphene
phosphorus precursor compound
CVD graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B, a graphene channel layer 500 is formed so as to be electrically connected to the so urce electrode 300 and the drain electrode 400. The distance …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
phosphorus content in phosphorus-doped graphene | 0.1–30 wt% | phosphorus-doped graphene |
Thickness | 21–29 nm |
Table 1
Amounts of phosphorus and nitroge n (atom %) within double- layer
nd the phosphorus obtained by XPS were found to be about 5.05 % and about 4.96 %, respectively, as shown in Table 1.
p. 15
Table 2
SVG
As shown in Table 2, after the thermal annealing was conducted, the phosphorus
p. 17
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 9,012,889Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, a graphene channel layer 500 is formed so as to be electrically connected to the so urce electrode 300 and the drain electrode 400. The distance …
FIGS. 2D and 2E illustrate electron transfer characteristics of graphene before thermal annealing in both cases when the graphene is doped with nitrogen and …
FIGS. 3A to 3H illustrate electron transfer characteristics (I d- Vg) of an example of a phosphorus-doped field effect transistor and an example of a …
FIGS. 4A and 4B illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure. [0037]
FIGS. 5A to 5D illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure:
FIG. 6B illustrates an electron transfer characteristic (I d- Vg) of a phosphorus-doped monolayer field effect transistor measured in the air. [0041]
FIGS. 7A and 7B are graphs showing the stability of a field effect transistor in accordance with an example of the present disclosure:
FIGS. 8A to 8C are scanning electron microscope (SEM) images of field effect transistors in accordance with an example of the present disclosure. [0043]
FIGS. 9A to 9C are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0044]
FIGS. 10 A to 10 B are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0045] Throughout the drawings …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently amended) A field effect transistor, comprising: a source electrode and a drain electrode disposed on a substrate; and a channel layer comprising a phosphorus-doped graphene, the channel layer electrically connected to the source electrode and the drain electrode, wherein the phosphorus-doped graphene is doped by substitution at an oxygen-binding site of the graphene with phosphorus, wherein the channel layer comprises a double layer of graphene with phosphorus between the double la yers.
The field effect transistor of claim 1, further comprising an oxide film disposed between the substrate and the channel layer.
The field effect transistor of claim 1, wherein the channel layer is obtained by performing doping on a graphene material using one selected from the group consisting of a triphenyl group-containing phosphorus compound, P₄ 0 4, H₃PO4, PF3, P Cl 3, PBr3, P I 3, PF 5, P C5, PBr 5, P Is, phosphine(PH₃), diphosphane(H 2PPH₂), diphosphine [R₂ PPR2, R₂P(CH₂) n PR2], diphosphene(HP = PH), diphosphenes(R-P = P-R), phosphine oxide(R₃P =0), phosphorane(PR s, R₃P = CR₂), phosphinite [P(OR)R2], phosphonite [P(OR)2R], phosphate [P(OR)3], phosphinate [R₂ P(RO)O], phosphonate [RP(RO)2 0], phosphate [P(RO)3 0], and their combinations as a precursor.
(Cu rr ently amended) The field effect transistor of claim 1, wherein the -chnne-aye-i-s-a due phosphorus-doped g raphene comprises multiple la yers.
The field effect transistor of claim 1, wherein a content of phosphorus in the phosphorus-doped graphene is 0.1 wt% or greater and 30 wt% or less. 2 Application No. 13/960,996
The field effect transistor of claim 1, wherein the source electrode and the drain electrode independently include one selected from the group consisting of A u, Al, Ag, Be, Bi, Co, Cu, Cr, Hf, In, Mn, Mo, Mg, Ni, Nb, Pb, Pd, Pt, Rh, Re, Ru, Sb, Ta, Te, Ti, V, W, Zr, Zn, and their combinations.
The field effect transistor of claim 1, wherein the substrate comprises silicon, glass, or quartz.
The field effect transistor of claim 1, wherein the substrate comprises a flexible substrate, a transparent substrate, or a flexible and transparent substrate.
The field effect transistor of claim 1, wherein phosphorus-doped graphene.
(Cu rr ently amended) A method of producing a field effect transistor, comprising: forming a source electrode and a drain electrode on a substrate; forming a channel layer including a phosphorus-doped graphene, the channel layer electrically connected to the source electrode and the drain electrode, wherein the phosphorus- doped graphene is doped by substitution at an oxygen-binding site of the graphene with phosphorus, the method further comprising doping a graphene material to obtain the phosphorus- doped graphene, wherein the doping is performed between double layers of a graphene film.
The method of claim 9, further comprising forming an oxide film on the substrate before forming the channel layer.
The method of claim 9, further comprising forming the channel layer by doping a graphene material with one selected from the group consisting of a triphenyl group- containing phosphorus compound, P₄ O 4, H₃PO4, PF3, PC l 3, PBr3, P I 3, PF 5, PC l5, PBr 5, P Is, phosphine(PH₃), diphosphane(H 2 PPH₂), diphosphine [R₂ PPR2, R₂P(CH₂) n PR2], diphosphene(HP = PH), diphosphenes(R-P = P-R), phosphine oxide(R₃P =0), phosphorane(PR 5, R₃P = CR₂), phosphinite [P(OR)R2], phosphonite [P(OR)2R], phosphate [P(OR)3], phosphinate [R₂ P(RO)O], phosphonate [RP(RO)2 0], phosphate [P(RO)3 0], and their combinations as a precursor. 3 Application No. 13/960,996
The method of claim 9, f wherein the doping is performed between do lr a p phosphorus-doped graphene comprises multiple la yers.
The method of claim 9, wherein a content of phosphorus in the phosphorus- doped graphene is 0.1 wt% or greater and 30 wt% or less.
The method of claim 9, wherein the source electrode and the drain electrode independently include one selected from the group consisting of A u, Al, Ag, Be, Bi, Co, Cu, Cr, Hf, In, Mn, Mo, Mg, Ni, Nb, Pb, Pd, Pt, Rh, Re, Ru, Sb, Ta, Te, Ti, V, W, Zr, Zn, and their combinations.
The method of claim 9, wherein the substrate comprises silicon, glass, or quartz.
The method of claim 9, wherein the substrate comprises a flexible substrate or a transparent flexible substrate.
The method of claim 9, wherein the doped graphene.
A method of preparing a phosphorus-doped graphene, comprising: injecting a precursor including a phosphorus compound into a graphene material, wherein the phosphorus compound is in a gas phase, a liquid phase, or a state of being dissolved in a solvent; and heating the precursor-injected graphene materia l, the method further comprising doping a graphene material to obtain the phosphorus- doped graphene, wherein the doping is performed between double layers of a graphene film.
The method of claim 17, wherein the graphene material comprises a graphene manufactured by chemical vapor deposition method, a graphene oxide, or a reduced graphene oxide. 4 Application No. 13/960,996
The method of claim 17, wherein the phosphorus compound includes one selected from the group consisting of a triphenyl group-containing phosphorus compound, P₄ 04, H₃P O 4, PF3, P Cl 3, PBr3, P I 3, PF S, P Cls, PBr s, P Is, phosphine(PH₃), diphosphane(H₂PPH₂), diphosphine [R₂PPR2, R₂P(CH₂) n PR2], diphosphene(HP=PH), diphosphenes(R-P=P-R), phosphine oxide(R₃P= 0), phosphorane(PR s, R₃P=CR₂), phosphinite [P(OR)R2], phosphonite [P(OR)2R], phosphate [P(OR)3], phosphinate [R₂P(RO)O], phosphonate [RP(RO)20], phosphate [P(RO)30], and their combinations.
The method of claim 17, further comprising graphene material by thermal annealing.
The method of claim 17, wherein the injecting pre-cursor injected graphene material is higher graphene material.
The method of claim 17, wherein the method of claim 17. shifting the Dirac point of the precursor-injected is adjusted such that the gate voltage of the than the Dirac voltage of the pre-cursor injected the phosphorus- doped graphene is an annealed phosphorus-doped graphene is an annealed phosphorus-phosphorus-doped graphene comprises multiple layers.
A phosphorus-doped graphene prepared by the
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor
Materials described outside the worked examples.
phosphorus-doped graphene
phosphorus precursor compound
CVD graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B, a graphene channel layer 500 is formed so as to be electrically connected to the so urce electrode 300 and the drain electrode 400. The distance …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
phosphorus content in phosphorus-doped graphene | 0.1–30 wt% | phosphorus-doped graphene |
Thickness | 21–29 nm |
Table 1
Amounts of phosphorus and nitroge n (atom %) within double- layer
nd the phosphorus obtained by XPS were found to be about 5.05 % and about 4.96 %, respectively, as shown in Table 1.
p. 15
Table 2
SVG
As shown in Table 2, after the thermal annealing was conducted, the phosphorus
p. 17
Related documents with shared materials, methods, properties, or citations.
graphene oxide
reduced graphene oxide
FIGS. 2D and 2E illustrate electron transfer characteristics of graphene before thermal annealing in both cases when the graphene is doped with nitrogen and …
FIGS. 2D and 2E illustrate electron transfer characteristics of graphene before thermal annealing in both cases when the graphene is doped with nitrogen and …
FIGS. 3A to 3H illustrate electron transfer characteristics (I d- Vg) of an example of a phosphorus-doped field effect transistor and an example of a …
FIGS. 4A and 4B illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure. [0037]
FIGS. 4A and 4B illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure. [0037]
FIGS. 5A to 5D illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure:
FIGS. 5A to 5D illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure:
FIG. 6B illustrates an electron transfer characteristic (I d- Vg) of a phosphorus-doped monolayer field effect transistor measured in the air. [0041]
FIGS. 7A and 7B are graphs showing the stability of a field effect transistor in accordance with an example of the present disclosure:
FIGS. 8A to 8C are scanning electron microscope (SEM) images of field effect transistors in accordance with an example of the present disclosure. [0043]
FIGS. 8A to 8C are scanning electron microscope (SEM) images of field effect transistors in accordance with an example of the present disclosure. [0043]
FIGS. 9A to 9C are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0044]
FIGS. 9A to 9C are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0044]
FIGS. 10 A to 10 B are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0045] Throughout the drawings …
FIGS. 10 A to 10 B are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0045] Throughout the drawings …
| — |
Voltage | 100–200 V | — |
Voltage | 157–250 V | — |
Thickness | 10–50 nm | — |
Thickness | 10–40 nm | — |
Thickness | 10–30 nm | — |
Thickness | 10–20 nm | — |
Thickness | 20–50 nm | — |
Thickness | 30–50 nm | — |
Thickness | 40–50 nm | — |
Thickness | 0.1–3 mm | — |
Thickness | 0.1–1 mm | — |
Thickness | 0.1–1000 mm | — |
Thickness | 0.1–5 mm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 30 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
GRAPHENE OXIDE POLYMER WITH NONLINEAR RESISTIVITY
graphene oxide
reduced graphene oxide
FIGS. 2D and 2E illustrate electron transfer characteristics of graphene before thermal annealing in both cases when the graphene is doped with nitrogen and …
FIGS. 2D and 2E illustrate electron transfer characteristics of graphene before thermal annealing in both cases when the graphene is doped with nitrogen and …
FIGS. 3A to 3H illustrate electron transfer characteristics (I d- Vg) of an example of a phosphorus-doped field effect transistor and an example of a …
FIGS. 4A and 4B illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure. [0037]
FIGS. 4A and 4B illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure. [0037]
FIGS. 5A to 5D illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure:
FIGS. 5A to 5D illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure:
FIG. 6B illustrates an electron transfer characteristic (I d- Vg) of a phosphorus-doped monolayer field effect transistor measured in the air. [0041]
FIGS. 7A and 7B are graphs showing the stability of a field effect transistor in accordance with an example of the present disclosure:
FIGS. 8A to 8C are scanning electron microscope (SEM) images of field effect transistors in accordance with an example of the present disclosure. [0043]
FIGS. 8A to 8C are scanning electron microscope (SEM) images of field effect transistors in accordance with an example of the present disclosure. [0043]
FIGS. 9A to 9C are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0044]
FIGS. 9A to 9C are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0044]
FIGS. 10 A to 10 B are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0045] Throughout the drawings …
FIGS. 10 A to 10 B are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0045] Throughout the drawings …
| — |
Voltage | 100–200 V | — |
Voltage | 157–250 V | — |
Thickness | 10–50 nm | — |
Thickness | 10–40 nm | — |
Thickness | 10–30 nm | — |
Thickness | 10–20 nm | — |
Thickness | 20–50 nm | — |
Thickness | 30–50 nm | — |
Thickness | 40–50 nm | — |
Thickness | 0.1–3 mm | — |
Thickness | 0.1–1 mm | — |
Thickness | 0.1–1000 mm | — |
Thickness | 0.1–5 mm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 30 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
GRAPHENE OXIDE POLYMER WITH NONLINEAR RESISTIVITY
graphene oxide
reduced graphene oxide
FIGS. 2D and 2E illustrate electron transfer characteristics of graphene before thermal annealing in both cases when the graphene is doped with nitrogen and …
FIGS. 2D and 2E illustrate electron transfer characteristics of graphene before thermal annealing in both cases when the graphene is doped with nitrogen and …
FIGS. 3A to 3H illustrate electron transfer characteristics (I d- Vg) of an example of a phosphorus-doped field effect transistor and an example of a …
FIGS. 4A and 4B illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure. [0037]
FIGS. 4A and 4B illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure. [0037]
FIGS. 5A to 5D illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure:
FIGS. 5A to 5D illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure:
FIG. 6B illustrates an electron transfer characteristic (I d- Vg) of a phosphorus-doped monolayer field effect transistor measured in the air. [0041]
FIGS. 7A and 7B are graphs showing the stability of a field effect transistor in accordance with an example of the present disclosure:
FIGS. 8A to 8C are scanning electron microscope (SEM) images of field effect transistors in accordance with an example of the present disclosure. [0043]
FIGS. 8A to 8C are scanning electron microscope (SEM) images of field effect transistors in accordance with an example of the present disclosure. [0043]
FIGS. 9A to 9C are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0044]
FIGS. 9A to 9C are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0044]
FIGS. 10 A to 10 B are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0045] Throughout the drawings …
FIGS. 10 A to 10 B are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0045] Throughout the drawings …
| — |
Voltage | 100–200 V | — |
Voltage | 157–250 V | — |
Thickness | 10–50 nm | — |
Thickness | 10–40 nm | — |
Thickness | 10–30 nm | — |
Thickness | 10–20 nm | — |
Thickness | 20–50 nm | — |
Thickness | 30–50 nm | — |
Thickness | 40–50 nm | — |
Thickness | 0.1–3 mm | — |
Thickness | 0.1–1 mm | — |
Thickness | 0.1–1000 mm | — |
Thickness | 0.1–5 mm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 30 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
GRAPHENE OXIDE POLYMER WITH NONLINEAR RESISTIVITY
graphene oxide
reduced graphene oxide
FIGS. 2D and 2E illustrate electron transfer characteristics of graphene before thermal annealing in both cases when the graphene is doped with nitrogen and …
FIGS. 2D and 2E illustrate electron transfer characteristics of graphene before thermal annealing in both cases when the graphene is doped with nitrogen and …
FIGS. 3A to 3H illustrate electron transfer characteristics (I d- Vg) of an example of a phosphorus-doped field effect transistor and an example of a …
FIGS. 4A and 4B illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure. [0037]
FIGS. 4A and 4B illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure. [0037]
FIGS. 5A to 5D illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure:
FIGS. 5A to 5D illustrate Raman spectra of field effect transistors in accordance with an example of the present disclosure:
FIG. 6B illustrates an electron transfer characteristic (I d- Vg) of a phosphorus-doped monolayer field effect transistor measured in the air. [0041]
FIGS. 7A and 7B are graphs showing the stability of a field effect transistor in accordance with an example of the present disclosure:
FIGS. 8A to 8C are scanning electron microscope (SEM) images of field effect transistors in accordance with an example of the present disclosure. [0043]
FIGS. 8A to 8C are scanning electron microscope (SEM) images of field effect transistors in accordance with an example of the present disclosure. [0043]
FIGS. 9A to 9C are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0044]
FIGS. 9A to 9C are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0044]
FIGS. 10 A to 10 B are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0045] Throughout the drawings …
FIGS. 10 A to 10 B are SEM images of field effect transistors in accordance with a comparative example of the present disclosure. [0045] Throughout the drawings …
| — |
Voltage | 100–200 V | — |
Voltage | 157–250 V | — |
Thickness | 10–50 nm | — |
Thickness | 10–40 nm | — |
Thickness | 10–30 nm | — |
Thickness | 10–20 nm | — |
Thickness | 20–50 nm | — |
Thickness | 30–50 nm | — |
Thickness | 40–50 nm | — |
Thickness | 0.1–3 mm | — |
Thickness | 0.1–1 mm | — |
Thickness | 0.1–1000 mm | — |
Thickness | 0.1–5 mm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 30 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |