A graphene layer is formed on a silicon substrate by dispersing expandable graphite processed at 1000°C in a 3% H₂ atmosphere, sonicating in dichloroethane for ~30 min, and applying to the substrate. Vanadium oxide nanowires are deposited on the graphene layer by dipping the graphene substrate in a vanadium oxide nanowire solution (affinity enhanced by positive voltage). The nanowires, initially randomly oriented, are aligned by dipping in ultrapure water and pulling along a desired direction. Ion beam milling (FIB) is then performed using the aligned nanowires as a mask. After etching, the substrate is rinsed with a buffer solution (1 M NaCl aqueous solution) for ~10 min to remove the oxide nanowires, leaving a nanoscale graphene structure.

A graphene layer is formed on a substrate. A gold metal layer is deposited on the graphene layer using a thermal evaporator or sputter. A molecule layer pattern with a hydrophobic molecule layer (e.g., octadecanethiol) and a hydrophilic molecule layer (e.g., cysteamine) is formed on the gold layer. Oxide nanowires selectively assemble on the hydrophilic region. Ion beam etching is performed using the aligned oxide nanowires as a mask. Remaining oxide nanowires and metal layer nanostructures are removed.

A sacrificial layer (aluminum) is formed on a graphene layer, followed by a gold metal layer. A molecule layer pattern is formed and oxide nanowires are selectively aligned. Ion beam etching is performed. Remaining oxide nanowires, metal layer nanostructure, and sacrificial layer nanostructure are removed. The oxide nanowires are removed with a buffer solution, and the sacrificial aluminum layer nanostructure is removed with tetramethylammonium hydroxide (TMAH) solution.

A graphene layer is formed on a silicon substrate by dispersing expandable graphite processed at 1000°C in a 3% H₂ atmosphere, sonicating in dichloroethane for ~30 min, and applying to the substrate. Vanadium oxide nanowires are deposited on the graphene layer by dipping the graphene substrate in a vanadium oxide nanowire solution (affinity enhanced by positive voltage). The nanowires, initially randomly oriented, are aligned by dipping in ultrapure water and pulling along a desired direction. Ion beam milling (FIB) is then performed using the aligned nanowires as a mask. After etching, the substrate is rinsed with a buffer solution (1 M NaCl aqueous solution) for ~10 min to remove the oxide nanowires, leaving a nanoscale graphene structure.

A graphene layer is formed on a substrate. A gold metal layer is deposited on the graphene layer using a thermal evaporator or sputter. A molecule layer pattern with a hydrophobic molecule layer (e.g., octadecanethiol) and a hydrophilic molecule layer (e.g., cysteamine) is formed on the gold layer. Oxide nanowires selectively assemble on the hydrophilic region. Ion beam etching is performed using the aligned oxide nanowires as a mask. Remaining oxide nanowires and metal layer nanostructures are removed.

A sacrificial layer (aluminum) is formed on a graphene layer, followed by a gold metal layer. A molecule layer pattern is formed and oxide nanowires are selectively aligned. Ion beam etching is performed. Remaining oxide nanowires, metal layer nanostructure, and sacrificial layer nanostructure are removed. The oxide nanowires are removed with a buffer solution, and the sacrificial aluminum layer nanostructure is removed with tetramethylammonium hydroxide (TMAH) solution.

A graphene layer is formed on a silicon substrate by dispersing expandable graphite processed at 1000°C in a 3% H₂ atmosphere, sonicating in dichloroethane for ~30 min, and applying to the substrate. Vanadium oxide nanowires are deposited on the graphene layer by dipping the graphene substrate in a vanadium oxide nanowire solution (affinity enhanced by positive voltage). The nanowires, initially randomly oriented, are aligned by dipping in ultrapure water and pulling along a desired direction. Ion beam milling (FIB) is then performed using the aligned nanowires as a mask. After etching, the substrate is rinsed with a buffer solution (1 M NaCl aqueous solution) for ~10 min to remove the oxide nanowires, leaving a nanoscale graphene structure.

A graphene layer is formed on a substrate. A gold metal layer is deposited on the graphene layer using a thermal evaporator or sputter. A molecule layer pattern with a hydrophobic molecule layer (e.g., octadecanethiol) and a hydrophilic molecule layer (e.g., cysteamine) is formed on the gold layer. Oxide nanowires selectively assemble on the hydrophilic region. Ion beam etching is performed using the aligned oxide nanowires as a mask. Remaining oxide nanowires and metal layer nanostructures are removed.

A sacrificial layer (aluminum) is formed on a graphene layer, followed by a gold metal layer. A molecule layer pattern is formed and oxide nanowires are selectively aligned. Ion beam etching is performed. Remaining oxide nanowires, metal layer nanostructure, and sacrificial layer nanostructure are removed. The oxide nanowires are removed with a buffer solution, and the sacrificial aluminum layer nanostructure is removed with tetramethylammonium hydroxide (TMAH) solution.

A graphene layer is formed on a silicon substrate by dispersing expandable graphite processed at 1000°C in a 3% H₂ atmosphere, sonicating in dichloroethane for ~30 min, and applying to the substrate. Vanadium oxide nanowires are deposited on the graphene layer by dipping the graphene substrate in a vanadium oxide nanowire solution (affinity enhanced by positive voltage). The nanowires, initially randomly oriented, are aligned by dipping in ultrapure water and pulling along a desired direction. Ion beam milling (FIB) is then performed using the aligned nanowires as a mask. After etching, the substrate is rinsed with a buffer solution (1 M NaCl aqueous solution) for ~10 min to remove the oxide nanowires, leaving a nanoscale graphene structure.

A graphene layer is formed on a substrate. A gold metal layer is deposited on the graphene layer using a thermal evaporator or sputter. A molecule layer pattern with a hydrophobic molecule layer (e.g., octadecanethiol) and a hydrophilic molecule layer (e.g., cysteamine) is formed on the gold layer. Oxide nanowires selectively assemble on the hydrophilic region. Ion beam etching is performed using the aligned oxide nanowires as a mask. Remaining oxide nanowires and metal layer nanostructures are removed.

A sacrificial layer (aluminum) is formed on a graphene layer, followed by a gold metal layer. A molecule layer pattern is formed and oxide nanowires are selectively aligned. Ion beam etching is performed. Remaining oxide nanowires, metal layer nanostructure, and sacrificial layer nanostructure are removed. The oxide nanowires are removed with a buffer solution, and the sacrificial aluminum layer nanostructure is removed with tetramethylammonium hydroxide (TMAH) solution.