CONTROL DEVICE USING GAN SEMICONDUCTOR

Kiyotaka Kasahara

Patent

Atlas literature

Patent

US 10,469,040

CONTROL DEVICE USING GAN SEMICONDUCTOR

Kiyotaka Kasahara

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 6 dependent

1
IndependentGaNcontrol device with differential amplification circuit, level shift circuit, and clipping circuit (GaN-based)
(Cu rr ently Amended) A control device comprising: a diﬀerential ampliﬁcation circuit that ampliﬁes a diﬀerence with respect to an input signal; a level shift circuit that is connected to an output side of the diﬀerential ampliﬁcation circuit; and a clipping circuit that is connected to an output side of the level shift circuit and that clips an input voltage, wherein the diﬀerential ampliﬁcation circuit includes a plurality of switching elements formed of a GaN semiconductor, and the clipping circuit includes a switching element that: is formed of the GaN semiconductor, limits a voltage on a high-level side to a limit voltage that is lower than an upper limit voltage input to the clipping circuit, and limits a voltage on a low-level side to a limit voltage that is higher than a lower limit voltage input to the clipping circuit. Currently amended
1. 2
  Dependent← claim 1GaNcontrol device with differential amplification circuit, level shift circuit, and clipping circuit (GaN-based)
  (Cu rr ently Amended) The control device according to claim 1, further comprising: an ampliﬁcation circuit that is connected to the output side of the diﬀerential ampliﬁcation circuit and ampliﬁes a voltage diﬀerence of voltages output from the diﬀerential ampliﬁcation circuit, wherein the level shift circuit is connected to an output side of the ampliﬁcation circuit, and the ampliﬁcation circuit includes a switching element formed of the GaN semiconductor. Currently amended
2. 3
  Dependent← claim 1GaNcontrol device with differential amplification circuit, level shift circuit, and clipping circuit (GaN-based)
  (Cu rr ently Amended) The control device according to claim 1, wherein the level shift circuit: shifts a level of a voltage output from the diﬀerential ampliﬁcation circuit, and includes a switching element formed of the GaN semiconductor. Currently amended
3. 4
  Dependent← claim 1GaNcontrol device with differential amplification circuit, level shift circuit, and clipping circuit (GaN-based)
  (Cu rr ently Amended) The control device according to claim 1, further comprising: a voltage variable circuit that is capable of changing a control voltage of the switching element included in the diﬀerential ampliﬁcation circuit, wherein the diﬀerential ampliﬁcation circuit ampliﬁes the diﬀerence between a voltage of the input signal and the control voltage. Currently amended
4. 5
  Dependent← claim 1GaNcontrol device with differential amplification circuit, level shift circuit, and clipping circuit (GaN-based)
  (Cu rr ently Amended) The control device according to claim 1, further comprising: a cu rr ent source that is connected to the diﬀerential ampliﬁcation circuit, wherein the current source includes a switching element formed of the GaN semiconductor. Currently amended
5. 6
  Dependent← claim 1GaNcontrol device with differential amplification circuit, level shift circuit, and clipping circuit (GaN-based)
  (Cu rr ently Amended) The control device according to claim 1, further comprising: a current source that is commonly connected to each terminal of the plurality of switching elements included in the diﬀerential ampliﬁcation circuit. Currently amended
6. 7
  Dependent← claim 1GaNcontrol device with differential amplification circuit, level shift circuit, and clipping circuit (GaN-based)
  The control device according to claim 1, wherein the plurality of switching elements included in the diﬀerential ampliﬁcation circuit are symmetrically connected, the input signal is input to a control terminal of one switching element among the plurality of switching elements, a reference voltage is input to a control terminal of the other switching element among the plurality of switching elements, the input signal indicates any one of a high level voltage value and a low level voltage value, and the voltage value of the reference voltage is set between the high level voltage value and the SVG 15796315.07-11-2019.JXZ₁₃₇₃DRXEAPX1.CLM.1.svg 0.15 1.58 Black and white Original
8
IndependentGaNcontrol device with differential amplification circuit, clipping circuit, and amplification circuit (GaN-based)
A control device comprising: a diﬀerential ampliﬁcation circuit that ampliﬁes a diﬀerence with respect to an input signal; and a clipping circuit that is connected to an output side of the diﬀerential ampliﬁcation circuit and that clips an input voltage; and an ampliﬁcation circuit that is connected to the output side of the diﬀerential ampliﬁcation circuit and ampliﬁes a voltage diﬀerence of voltages output from the diﬀerential ampliﬁcation circuit, wherein the diﬀerential ampliﬁcation circuit includes a plurality of switching elements formed of a G aN semiconductor, the clipping circuit includes a switching element that: is formed of the G aN semiconductor, limits a voltage on a high-level side to a limit voltage that is lower than an upper limit voltage input to the clipping circuit, and limits a voltage on a low-level side to a limit voltage that is higher than a lower limit voltage input to the clipping circuit, and the ampliﬁcation circuit includes a switching element formed of the G aN semiconductor. New
9
IndependentGaNcontrol device with symmetric differential amplification circuit and clipping circuit (GaN-based)
A control device comprising: a diﬀerential ampliﬁcation circuit that ampliﬁes a diﬀerence with respect to an input signal; and a clipping circuit that is connected to an output side of the diﬀerential ampliﬁcation circuit and that clips an input voltage, wherein the diﬀerential ampliﬁcation circuit includes a plurality of switching elements formed of a GaN semiconductor, the clipping circuit includes a switching element that: is formed of the GaN semiconductor, limits a voltage on a high-level side to a limit voltage that is lower than an upper limit voltage input to the clipping circuit, and limits a voltage on a low-level side to a limit voltage that is higher than a lower limit voltage input to the clipping circuit, the plurality of switching elements included in the diﬀerential ampliﬁcation circuit are symmetrically connected, the input signal is input to a control terminal of one switching element among the plurality of switching elements, a reference voltage is input to a control terminal of the other switching element among the plurality of switching elements, the input signal indicates any one of a high level voltage value and a low level voltage value, and the voltage value of the reference voltage is set between the high level voltage value and the low level voltage value. New

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

control device with differential amplification circuit, level shift circuit, and clipping circuit (GaN-based)

GaNclipping circuit switching element

GaNlevel shift circuit switching element

GaNdifferential amplification circuit switching elements

control device with differential amplification circuit, clipping circuit, and amplification circuit (GaN-based)

GaNamplification circuit switching element

GaNclipping circuit switching element

Materials

Materials described outside the worked examples.

GaN semiconductor

GaN

Switching Element Material

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Voltage	0–3.3 V	—
Voltage

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