Patent
US 10,233,566CONTINUOUS SINGLE CRYSTAL GROWTH OF GRAPHENE
Frederick Alyious List III
US
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Patent
Atlas literature
Patent
US 10,233,566Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of synthesizing graphene comprising: heating the interior of a chemical vapor deposition chamber to a temperature above 800 0 C; drawing a catalytic substrate through the interior of the chemical vapor deposition chamber in a first lengthwise direction; introducing hydrogen gas into the interior of the chemical vapor deposition chamber in the same first lengthwise direction such that the hydrogen gas includes a flow rate of at least 15 cm/s in the first lengthwise direction, the hydrogen gas being mixed with an inert gas; and flowing a hydrocarbon gas through a reactive supply conduit and introducing [[a]] the hydrocarbon gas into the interior of the chemical deposition chamber downwardly at an angle relative to the first lengthwise direction through an opening in the reactive supply conduit, the opening being immediately above a major surface of the catalytic substrate at a crystal growth front, wherein the hydrocarbon gas and the hydrogen gas form a precursor gas mixture, and wherein the catalytic substrate reacts with the precursor gas mixture to form continuous single crystal graphene on the catalytic substrate while being drawn in the same direction as the flow of the hydrogen gas. Currently amended
The method of claim 1 wherein the opening is disposed between 1 mm to 10 mm above the catalytic substrate. Original
The method of claim 1 wherein the catalytic substrate comprises a polycrystalline substrate. Original
The method of claim 1 wherein at least one of a flux of the hydrocarbon gas through the opening and a flow rate of the hydrogen gas through the chemical vapor deposition chamber is selected to produce a concentration gradient of the hydrocarbon gas at a the crystal growth front of the continuous single crystal graphene. Currently amended
The method of claim 1, further comprising delaminating the continuous single crystal graphene from the catalytic substrate without a supporting polymer layer. Original
The method of claim 1 wherein the hydrogen gas comprises from 1.5 to 3 % of hydrogen in a noble gas. Original
The method of claim 1 wherein the hydrocarbon gas comprises 0.35 % or less of a hydrocarbon precursor in a noble gas. Original
The method of claim 1, further comprising maintaining a flux at the opening at 30 s cc m or less. Original
The method of claim 1 wherein the drawing rate of the catalytic substrate is between 1 cm/hr to 2.5 cm/hr. Original
The method of claim 1, further comprising: initiating growth of the continuous single crystal graphene on a support adjacent an edge of the catalytic substrate; and continuing to draw the catalytic substrate through the chemical vapor deposition chamber and past the opening to form the continuous single crystal graphene on the catalytic substrate. Original
The method of claim 1 wherein the hydrocarbon gas is selected from the group consisting of methane, ethane, propane, butane, pentane, hexane, heptane, octane, benzene, toluene, and combinations thereof. Original
The method of claim 1 wherein the first lengthwise direction is perpendicular to an armchair termination edge of the continuous single crystal graphene. Original
Canceled
- 20. Canceled
Canceled
Materials described outside the worked examples.
continuous single crystal graphene
C
hydrogen gas mixed with inert gas
H₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 mm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,233,566Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of synthesizing graphene comprising: heating the interior of a chemical vapor deposition chamber to a temperature above 800 0 C; drawing a catalytic substrate through the interior of the chemical vapor deposition chamber in a first lengthwise direction; introducing hydrogen gas into the interior of the chemical vapor deposition chamber in the same first lengthwise direction such that the hydrogen gas includes a flow rate of at least 15 cm/s in the first lengthwise direction, the hydrogen gas being mixed with an inert gas; and flowing a hydrocarbon gas through a reactive supply conduit and introducing [[a]] the hydrocarbon gas into the interior of the chemical deposition chamber downwardly at an angle relative to the first lengthwise direction through an opening in the reactive supply conduit, the opening being immediately above a major surface of the catalytic substrate at a crystal growth front, wherein the hydrocarbon gas and the hydrogen gas form a precursor gas mixture, and wherein the catalytic substrate reacts with the precursor gas mixture to form continuous single crystal graphene on the catalytic substrate while being drawn in the same direction as the flow of the hydrogen gas. Currently amended
The method of claim 1 wherein the opening is disposed between 1 mm to 10 mm above the catalytic substrate. Original
The method of claim 1 wherein the catalytic substrate comprises a polycrystalline substrate. Original
The method of claim 1 wherein at least one of a flux of the hydrocarbon gas through the opening and a flow rate of the hydrogen gas through the chemical vapor deposition chamber is selected to produce a concentration gradient of the hydrocarbon gas at a the crystal growth front of the continuous single crystal graphene. Currently amended
The method of claim 1, further comprising delaminating the continuous single crystal graphene from the catalytic substrate without a supporting polymer layer. Original
The method of claim 1 wherein the hydrogen gas comprises from 1.5 to 3 % of hydrogen in a noble gas. Original
The method of claim 1 wherein the hydrocarbon gas comprises 0.35 % or less of a hydrocarbon precursor in a noble gas. Original
The method of claim 1, further comprising maintaining a flux at the opening at 30 s cc m or less. Original
The method of claim 1 wherein the drawing rate of the catalytic substrate is between 1 cm/hr to 2.5 cm/hr. Original
The method of claim 1, further comprising: initiating growth of the continuous single crystal graphene on a support adjacent an edge of the catalytic substrate; and continuing to draw the catalytic substrate through the chemical vapor deposition chamber and past the opening to form the continuous single crystal graphene on the catalytic substrate. Original
The method of claim 1 wherein the hydrocarbon gas is selected from the group consisting of methane, ethane, propane, butane, pentane, hexane, heptane, octane, benzene, toluene, and combinations thereof. Original
The method of claim 1 wherein the first lengthwise direction is perpendicular to an armchair termination edge of the continuous single crystal graphene. Original
Canceled
- 20. Canceled
Canceled
Materials described outside the worked examples.
continuous single crystal graphene
C
hydrogen gas mixed with inert gas
H₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 mm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,233,566Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of synthesizing graphene comprising: heating the interior of a chemical vapor deposition chamber to a temperature above 800 0 C; drawing a catalytic substrate through the interior of the chemical vapor deposition chamber in a first lengthwise direction; introducing hydrogen gas into the interior of the chemical vapor deposition chamber in the same first lengthwise direction such that the hydrogen gas includes a flow rate of at least 15 cm/s in the first lengthwise direction, the hydrogen gas being mixed with an inert gas; and flowing a hydrocarbon gas through a reactive supply conduit and introducing [[a]] the hydrocarbon gas into the interior of the chemical deposition chamber downwardly at an angle relative to the first lengthwise direction through an opening in the reactive supply conduit, the opening being immediately above a major surface of the catalytic substrate at a crystal growth front, wherein the hydrocarbon gas and the hydrogen gas form a precursor gas mixture, and wherein the catalytic substrate reacts with the precursor gas mixture to form continuous single crystal graphene on the catalytic substrate while being drawn in the same direction as the flow of the hydrogen gas. Currently amended
The method of claim 1 wherein the opening is disposed between 1 mm to 10 mm above the catalytic substrate. Original
The method of claim 1 wherein the catalytic substrate comprises a polycrystalline substrate. Original
The method of claim 1 wherein at least one of a flux of the hydrocarbon gas through the opening and a flow rate of the hydrogen gas through the chemical vapor deposition chamber is selected to produce a concentration gradient of the hydrocarbon gas at a the crystal growth front of the continuous single crystal graphene. Currently amended
The method of claim 1, further comprising delaminating the continuous single crystal graphene from the catalytic substrate without a supporting polymer layer. Original
The method of claim 1 wherein the hydrogen gas comprises from 1.5 to 3 % of hydrogen in a noble gas. Original
The method of claim 1 wherein the hydrocarbon gas comprises 0.35 % or less of a hydrocarbon precursor in a noble gas. Original
The method of claim 1, further comprising maintaining a flux at the opening at 30 s cc m or less. Original
The method of claim 1 wherein the drawing rate of the catalytic substrate is between 1 cm/hr to 2.5 cm/hr. Original
The method of claim 1, further comprising: initiating growth of the continuous single crystal graphene on a support adjacent an edge of the catalytic substrate; and continuing to draw the catalytic substrate through the chemical vapor deposition chamber and past the opening to form the continuous single crystal graphene on the catalytic substrate. Original
The method of claim 1 wherein the hydrocarbon gas is selected from the group consisting of methane, ethane, propane, butane, pentane, hexane, heptane, octane, benzene, toluene, and combinations thereof. Original
The method of claim 1 wherein the first lengthwise direction is perpendicular to an armchair termination edge of the continuous single crystal graphene. Original
Canceled
- 20. Canceled
Canceled
Materials described outside the worked examples.
continuous single crystal graphene
C
hydrogen gas mixed with inert gas
H₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 mm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,233,566Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of synthesizing graphene comprising: heating the interior of a chemical vapor deposition chamber to a temperature above 800 0 C; drawing a catalytic substrate through the interior of the chemical vapor deposition chamber in a first lengthwise direction; introducing hydrogen gas into the interior of the chemical vapor deposition chamber in the same first lengthwise direction such that the hydrogen gas includes a flow rate of at least 15 cm/s in the first lengthwise direction, the hydrogen gas being mixed with an inert gas; and flowing a hydrocarbon gas through a reactive supply conduit and introducing [[a]] the hydrocarbon gas into the interior of the chemical deposition chamber downwardly at an angle relative to the first lengthwise direction through an opening in the reactive supply conduit, the opening being immediately above a major surface of the catalytic substrate at a crystal growth front, wherein the hydrocarbon gas and the hydrogen gas form a precursor gas mixture, and wherein the catalytic substrate reacts with the precursor gas mixture to form continuous single crystal graphene on the catalytic substrate while being drawn in the same direction as the flow of the hydrogen gas. Currently amended
The method of claim 1 wherein the opening is disposed between 1 mm to 10 mm above the catalytic substrate. Original
The method of claim 1 wherein the catalytic substrate comprises a polycrystalline substrate. Original
The method of claim 1 wherein at least one of a flux of the hydrocarbon gas through the opening and a flow rate of the hydrogen gas through the chemical vapor deposition chamber is selected to produce a concentration gradient of the hydrocarbon gas at a the crystal growth front of the continuous single crystal graphene. Currently amended
The method of claim 1, further comprising delaminating the continuous single crystal graphene from the catalytic substrate without a supporting polymer layer. Original
The method of claim 1 wherein the hydrogen gas comprises from 1.5 to 3 % of hydrogen in a noble gas. Original
The method of claim 1 wherein the hydrocarbon gas comprises 0.35 % or less of a hydrocarbon precursor in a noble gas. Original
The method of claim 1, further comprising maintaining a flux at the opening at 30 s cc m or less. Original
The method of claim 1 wherein the drawing rate of the catalytic substrate is between 1 cm/hr to 2.5 cm/hr. Original
The method of claim 1, further comprising: initiating growth of the continuous single crystal graphene on a support adjacent an edge of the catalytic substrate; and continuing to draw the catalytic substrate through the chemical vapor deposition chamber and past the opening to form the continuous single crystal graphene on the catalytic substrate. Original
The method of claim 1 wherein the hydrocarbon gas is selected from the group consisting of methane, ethane, propane, butane, pentane, hexane, heptane, octane, benzene, toluene, and combinations thereof. Original
The method of claim 1 wherein the first lengthwise direction is perpendicular to an armchair termination edge of the continuous single crystal graphene. Original
Canceled
- 20. Canceled
Canceled
Materials described outside the worked examples.
continuous single crystal graphene
C
hydrogen gas mixed with inert gas
H₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 mm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
polycrystalline catalytic substrate
hydrocarbon precursor gas
| — |
Thickness | ≤ 8 cm | — |
Temperature | ≥ 800 °C | — |
Temperature | ≥ 1 °C | — |
Thickness | ≥ 15 cm | — |
polycrystalline catalytic substrate
hydrocarbon precursor gas
| — |
Thickness | ≤ 8 cm | — |
Temperature | ≥ 800 °C | — |
Temperature | ≥ 1 °C | — |
Thickness | ≥ 15 cm | — |
polycrystalline catalytic substrate
hydrocarbon precursor gas
| — |
Thickness | ≤ 8 cm | — |
Temperature | ≥ 800 °C | — |
Temperature | ≥ 1 °C | — |
Thickness | ≥ 15 cm | — |
polycrystalline catalytic substrate
hydrocarbon precursor gas
| — |
Thickness | ≤ 8 cm | — |
Temperature | ≥ 800 °C | — |
Temperature | ≥ 1 °C | — |
Thickness | ≥ 15 cm | — |