Patent
US 10,056,264ATOMIC LAYER ETCHING OF GaN AND OTHER I II-V MA TERIALS
Wenbing Yang, Keren Jacobs Kanarik, Tomihito Ohba, Jeffrey Marks et al.
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,056,264Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 A provides a process flow diagram for performing operations in a method in accordance with disclosed embodiments.
Figure 1B shows an example schematic illustration of an atomic layer etching (ALE) cycle.
Figure 1 C shows an example of a bias voltage (Vb) vs. etched amount curve for ALE of GaN using Cl 2 and Ar, with the bias applied during the Ar removal
Figure 1 D shows GaN/AlGaN etch selectivity as a function of bias voltage.
Figure 1 E illustrates certain operations in fabricating a GaN H EMT device, including a GaN/A l GaN heterojunction. LAMRP₂₁ 0/3713-2US 2
Figure 2 schematically shows a cross-sectional view of an inductively coupled plasma apparatus appropriate for implementing certain embodiments herein.
Figure 3 depicts a semiconductor process cluster architecture with various modules that interface with a vacuum transfer module.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of etching a I II -V material on a substrate, comprising: a) exposing the I II -V material to a chlorine-containing plasma without biasing the substrate to form a modified I II -V surface layer, wherein the chlorine-containing plasma includes essentially no ionic species; and b) applying a bias voltage to the substrate while exposing the modified I II -V surface layer to an inert plasma to thereby remove the modified I II -V surface layer. Currently amended
The method of claim 1, further comprising repeating (a) and (b) one or more times. Original
The method of claim 1, wherein the bias voltage is at a level such that the removal is in a self-limiting regime. Original
The method of claim 1, wherein the chlorine-containing plasma is generated from a process gas including a boron-containing compound, wherein about 0.5% to 10% (volumetric) of the process gas is the boron-containing compound. Original
The method of claim 1, further comprising performing one or more additional cycles of (a) and (b), wherein the bias voltage is lowered during the one or more additional cycles. Original
The method of claim 1, wherein the I II -V material is GaN. Original
The method of claim 1, wherein the bias voltage is between about 20 V and 120 V. Original
The method of claim 1, wherein the bias voltage is between about 50 V and 120 V. Original
The method of claim 1, wherein the bias voltage is between about 50 V and 100 V. Original
The method of claim 1, wherein the chlorine-containing plasma is generated from a mixture of a chlorine-containing gas and a boron-containing gas. Original
The method of claim 1, wherein the chlorine-containing plasma is generated from a mixture of a C l 2 and BC l 3. Original
The method of claim 1, wherein the inert plasma in (b) is an argon-containing plasma. Original
The method of claim 1, wherein the bias voltage is at level such that the etch is selective to an underlying material. Original
Canceled
A method of etching a III -V material on a substrate, comprising: a) exposing the I II -V material to a chlorine-containing plasma without biasing the substrate to form a modified I II -V surface layer, wherein the chlorine-containing plasma is generated from a mixture of C l 2 and BC l 3, wherein about 0.5% to 10% (volumetric) of the mixture is BC l 3 and the remainder is C l 2; and b) applying a bias voltage to the substrate while exposing the modified I II -V surface layer to an inert plasma to thereby remove the modified I II -V surface layer. New
The method of claim 17, wherein about 5% of the mixture is BC 1 3. New
A method of selectively etching a first I II -V material relative to a second I II-V material that underlies the first I II -V on a substrate, comprising: (a) exposing the first I II -V material to a chlorine-containing plasma without biasing the substrate to form a first modified I II -V surface layer, (b) applying a first bias voltage to the substrate while exposing the first modified III -V surface layer to an inert plasma to thereby remove the first modified I II -V surface layer, (c) after (b), exposing the first I II -V material to a chlorine-containing plasma without biasing the substrate to form a second modified I II -V surface layer, (d) applying a second bias voltage to the substrate while exposing the second modified I II -V surface layer to an inert plasma to thereby remove the second modified I II-V surface layer, wherein the second bias voltage is lower than the first bias voltage. New
The method of claim 19, wherein at the first bias voltage, the etch selectivity of the first I II -V material relative to the second I II -V material is less than infinity. New
Materials described outside the worked examples.
III-V material
chlorine-containing plasma
boron-containing compound
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.001–100 Torr | — |
— |
Patent
Atlas literature
Patent
US 10,056,264Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 A provides a process flow diagram for performing operations in a method in accordance with disclosed embodiments.
Figure 1B shows an example schematic illustration of an atomic layer etching (ALE) cycle.
Figure 1 C shows an example of a bias voltage (Vb) vs. etched amount curve for ALE of GaN using Cl 2 and Ar, with the bias applied during the Ar removal
Figure 1 D shows GaN/AlGaN etch selectivity as a function of bias voltage.
Figure 1 E illustrates certain operations in fabricating a GaN H EMT device, including a GaN/A l GaN heterojunction. LAMRP₂₁ 0/3713-2US 2
Figure 2 schematically shows a cross-sectional view of an inductively coupled plasma apparatus appropriate for implementing certain embodiments herein.
Figure 3 depicts a semiconductor process cluster architecture with various modules that interface with a vacuum transfer module.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of etching a I II -V material on a substrate, comprising: a) exposing the I II -V material to a chlorine-containing plasma without biasing the substrate to form a modified I II -V surface layer, wherein the chlorine-containing plasma includes essentially no ionic species; and b) applying a bias voltage to the substrate while exposing the modified I II -V surface layer to an inert plasma to thereby remove the modified I II -V surface layer. Currently amended
The method of claim 1, further comprising repeating (a) and (b) one or more times. Original
The method of claim 1, wherein the bias voltage is at a level such that the removal is in a self-limiting regime. Original
The method of claim 1, wherein the chlorine-containing plasma is generated from a process gas including a boron-containing compound, wherein about 0.5% to 10% (volumetric) of the process gas is the boron-containing compound. Original
The method of claim 1, further comprising performing one or more additional cycles of (a) and (b), wherein the bias voltage is lowered during the one or more additional cycles. Original
The method of claim 1, wherein the I II -V material is GaN. Original
The method of claim 1, wherein the bias voltage is between about 20 V and 120 V. Original
The method of claim 1, wherein the bias voltage is between about 50 V and 120 V. Original
The method of claim 1, wherein the bias voltage is between about 50 V and 100 V. Original
The method of claim 1, wherein the chlorine-containing plasma is generated from a mixture of a chlorine-containing gas and a boron-containing gas. Original
The method of claim 1, wherein the chlorine-containing plasma is generated from a mixture of a C l 2 and BC l 3. Original
The method of claim 1, wherein the inert plasma in (b) is an argon-containing plasma. Original
The method of claim 1, wherein the bias voltage is at level such that the etch is selective to an underlying material. Original
Canceled
A method of etching a III -V material on a substrate, comprising: a) exposing the I II -V material to a chlorine-containing plasma without biasing the substrate to form a modified I II -V surface layer, wherein the chlorine-containing plasma is generated from a mixture of C l 2 and BC l 3, wherein about 0.5% to 10% (volumetric) of the mixture is BC l 3 and the remainder is C l 2; and b) applying a bias voltage to the substrate while exposing the modified I II -V surface layer to an inert plasma to thereby remove the modified I II -V surface layer. New
The method of claim 17, wherein about 5% of the mixture is BC 1 3. New
A method of selectively etching a first I II -V material relative to a second I II-V material that underlies the first I II -V on a substrate, comprising: (a) exposing the first I II -V material to a chlorine-containing plasma without biasing the substrate to form a first modified I II -V surface layer, (b) applying a first bias voltage to the substrate while exposing the first modified III -V surface layer to an inert plasma to thereby remove the first modified I II -V surface layer, (c) after (b), exposing the first I II -V material to a chlorine-containing plasma without biasing the substrate to form a second modified I II -V surface layer, (d) applying a second bias voltage to the substrate while exposing the second modified I II -V surface layer to an inert plasma to thereby remove the second modified I II-V surface layer, wherein the second bias voltage is lower than the first bias voltage. New
The method of claim 19, wherein at the first bias voltage, the etch selectivity of the first I II -V material relative to the second I II -V material is less than infinity. New
Materials described outside the worked examples.
III-V material
chlorine-containing plasma
boron-containing compound
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.001–100 Torr | — |
— |
Patent
Atlas literature
Patent
US 10,056,264Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 A provides a process flow diagram for performing operations in a method in accordance with disclosed embodiments.
Figure 1B shows an example schematic illustration of an atomic layer etching (ALE) cycle.
Figure 1 C shows an example of a bias voltage (Vb) vs. etched amount curve for ALE of GaN using Cl 2 and Ar, with the bias applied during the Ar removal
Figure 1 D shows GaN/AlGaN etch selectivity as a function of bias voltage.
Figure 1 E illustrates certain operations in fabricating a GaN H EMT device, including a GaN/A l GaN heterojunction. LAMRP₂₁ 0/3713-2US 2
Figure 2 schematically shows a cross-sectional view of an inductively coupled plasma apparatus appropriate for implementing certain embodiments herein.
Figure 3 depicts a semiconductor process cluster architecture with various modules that interface with a vacuum transfer module.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of etching a I II -V material on a substrate, comprising: a) exposing the I II -V material to a chlorine-containing plasma without biasing the substrate to form a modified I II -V surface layer, wherein the chlorine-containing plasma includes essentially no ionic species; and b) applying a bias voltage to the substrate while exposing the modified I II -V surface layer to an inert plasma to thereby remove the modified I II -V surface layer. Currently amended
The method of claim 1, further comprising repeating (a) and (b) one or more times. Original
The method of claim 1, wherein the bias voltage is at a level such that the removal is in a self-limiting regime. Original
The method of claim 1, wherein the chlorine-containing plasma is generated from a process gas including a boron-containing compound, wherein about 0.5% to 10% (volumetric) of the process gas is the boron-containing compound. Original
The method of claim 1, further comprising performing one or more additional cycles of (a) and (b), wherein the bias voltage is lowered during the one or more additional cycles. Original
The method of claim 1, wherein the I II -V material is GaN. Original
The method of claim 1, wherein the bias voltage is between about 20 V and 120 V. Original
The method of claim 1, wherein the bias voltage is between about 50 V and 120 V. Original
The method of claim 1, wherein the bias voltage is between about 50 V and 100 V. Original
The method of claim 1, wherein the chlorine-containing plasma is generated from a mixture of a chlorine-containing gas and a boron-containing gas. Original
The method of claim 1, wherein the chlorine-containing plasma is generated from a mixture of a C l 2 and BC l 3. Original
The method of claim 1, wherein the inert plasma in (b) is an argon-containing plasma. Original
The method of claim 1, wherein the bias voltage is at level such that the etch is selective to an underlying material. Original
Canceled
A method of etching a III -V material on a substrate, comprising: a) exposing the I II -V material to a chlorine-containing plasma without biasing the substrate to form a modified I II -V surface layer, wherein the chlorine-containing plasma is generated from a mixture of C l 2 and BC l 3, wherein about 0.5% to 10% (volumetric) of the mixture is BC l 3 and the remainder is C l 2; and b) applying a bias voltage to the substrate while exposing the modified I II -V surface layer to an inert plasma to thereby remove the modified I II -V surface layer. New
The method of claim 17, wherein about 5% of the mixture is BC 1 3. New
A method of selectively etching a first I II -V material relative to a second I II-V material that underlies the first I II -V on a substrate, comprising: (a) exposing the first I II -V material to a chlorine-containing plasma without biasing the substrate to form a first modified I II -V surface layer, (b) applying a first bias voltage to the substrate while exposing the first modified III -V surface layer to an inert plasma to thereby remove the first modified I II -V surface layer, (c) after (b), exposing the first I II -V material to a chlorine-containing plasma without biasing the substrate to form a second modified I II -V surface layer, (d) applying a second bias voltage to the substrate while exposing the second modified I II -V surface layer to an inert plasma to thereby remove the second modified I II-V surface layer, wherein the second bias voltage is lower than the first bias voltage. New
The method of claim 19, wherein at the first bias voltage, the etch selectivity of the first I II -V material relative to the second I II -V material is less than infinity. New
Materials described outside the worked examples.
III-V material
chlorine-containing plasma
boron-containing compound
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.001–100 Torr | — |
— |
Patent
Atlas literature
Patent
US 10,056,264Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 A provides a process flow diagram for performing operations in a method in accordance with disclosed embodiments.
Figure 1B shows an example schematic illustration of an atomic layer etching (ALE) cycle.
Figure 1 C shows an example of a bias voltage (Vb) vs. etched amount curve for ALE of GaN using Cl 2 and Ar, with the bias applied during the Ar removal
Figure 1 D shows GaN/AlGaN etch selectivity as a function of bias voltage.
Figure 1 E illustrates certain operations in fabricating a GaN H EMT device, including a GaN/A l GaN heterojunction. LAMRP₂₁ 0/3713-2US 2
Figure 2 schematically shows a cross-sectional view of an inductively coupled plasma apparatus appropriate for implementing certain embodiments herein.
Figure 3 depicts a semiconductor process cluster architecture with various modules that interface with a vacuum transfer module.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of etching a I II -V material on a substrate, comprising: a) exposing the I II -V material to a chlorine-containing plasma without biasing the substrate to form a modified I II -V surface layer, wherein the chlorine-containing plasma includes essentially no ionic species; and b) applying a bias voltage to the substrate while exposing the modified I II -V surface layer to an inert plasma to thereby remove the modified I II -V surface layer. Currently amended
The method of claim 1, further comprising repeating (a) and (b) one or more times. Original
The method of claim 1, wherein the bias voltage is at a level such that the removal is in a self-limiting regime. Original
The method of claim 1, wherein the chlorine-containing plasma is generated from a process gas including a boron-containing compound, wherein about 0.5% to 10% (volumetric) of the process gas is the boron-containing compound. Original
The method of claim 1, further comprising performing one or more additional cycles of (a) and (b), wherein the bias voltage is lowered during the one or more additional cycles. Original
The method of claim 1, wherein the I II -V material is GaN. Original
The method of claim 1, wherein the bias voltage is between about 20 V and 120 V. Original
The method of claim 1, wherein the bias voltage is between about 50 V and 120 V. Original
The method of claim 1, wherein the bias voltage is between about 50 V and 100 V. Original
The method of claim 1, wherein the chlorine-containing plasma is generated from a mixture of a chlorine-containing gas and a boron-containing gas. Original
The method of claim 1, wherein the chlorine-containing plasma is generated from a mixture of a C l 2 and BC l 3. Original
The method of claim 1, wherein the inert plasma in (b) is an argon-containing plasma. Original
The method of claim 1, wherein the bias voltage is at level such that the etch is selective to an underlying material. Original
Canceled
A method of etching a III -V material on a substrate, comprising: a) exposing the I II -V material to a chlorine-containing plasma without biasing the substrate to form a modified I II -V surface layer, wherein the chlorine-containing plasma is generated from a mixture of C l 2 and BC l 3, wherein about 0.5% to 10% (volumetric) of the mixture is BC l 3 and the remainder is C l 2; and b) applying a bias voltage to the substrate while exposing the modified I II -V surface layer to an inert plasma to thereby remove the modified I II -V surface layer. New
The method of claim 17, wherein about 5% of the mixture is BC 1 3. New
A method of selectively etching a first I II -V material relative to a second I II-V material that underlies the first I II -V on a substrate, comprising: (a) exposing the first I II -V material to a chlorine-containing plasma without biasing the substrate to form a first modified I II -V surface layer, (b) applying a first bias voltage to the substrate while exposing the first modified III -V surface layer to an inert plasma to thereby remove the first modified I II -V surface layer, (c) after (b), exposing the first I II -V material to a chlorine-containing plasma without biasing the substrate to form a second modified I II -V surface layer, (d) applying a second bias voltage to the substrate while exposing the second modified I II -V surface layer to an inert plasma to thereby remove the second modified I II-V surface layer, wherein the second bias voltage is lower than the first bias voltage. New
The method of claim 19, wherein at the first bias voltage, the etch selectivity of the first I II -V material relative to the second I II -V material is less than infinity. New
Materials described outside the worked examples.
III-V material
chlorine-containing plasma
boron-containing compound
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.001–100 Torr | — |
— |
GaN
AlGaN
Cl₂
BCl₃
argon-containing plasma
GaP
GaAs
InP
InGaAs
InAlAs
AlGaAs
| — |
Thickness | 0.1–5 nm | — |
Thickness | 0.2–50 nm | — |
Thickness | 0.2–5 nm | — |
Voltage | 50–80 V | — |
Thickness | 0.1–50 nm | — |
Voltage | 20–120 V | — |
Voltage | 50–120 V | — |
Voltage | 50–100 V | — |
GaN
AlGaN
Cl₂
BCl₃
argon-containing plasma
GaP
GaAs
InP
InGaAs
InAlAs
AlGaAs
| — |
Thickness | 0.1–5 nm | — |
Thickness | 0.2–50 nm | — |
Thickness | 0.2–5 nm | — |
Voltage | 50–80 V | — |
Thickness | 0.1–50 nm | — |
Voltage | 20–120 V | — |
Voltage | 50–120 V | — |
Voltage | 50–100 V | — |
GaN
AlGaN
Cl₂
BCl₃
argon-containing plasma
GaP
GaAs
InP
InGaAs
InAlAs
AlGaAs
| — |
Thickness | 0.1–5 nm | — |
Thickness | 0.2–50 nm | — |
Thickness | 0.2–5 nm | — |
Voltage | 50–80 V | — |
Thickness | 0.1–50 nm | — |
Voltage | 20–120 V | — |
Voltage | 50–120 V | — |
Voltage | 50–100 V | — |
GaN
AlGaN
Cl₂
BCl₃
argon-containing plasma
GaP
GaAs
InP
InGaAs
InAlAs
AlGaAs
| — |
Thickness | 0.1–5 nm | — |
Thickness | 0.2–50 nm | — |
Thickness | 0.2–5 nm | — |
Voltage | 50–80 V | — |
Thickness | 0.1–50 nm | — |
Voltage | 20–120 V | — |
Voltage | 50–120 V | — |
Voltage | 50–100 V | — |