Research paperComputational DFTTheoreticalManipulating the Optical Response of TaIrTe₄ Heterostructures through Band Alignment StrategyLongfei Guo, Shaowen Xu, Qilong Cui, Qingmin Hu et al.2025·10.48550/arxiv.2411.15517·arXiv:2411.15517AbstractWeyl semimetals, such as TaIrTe4, characterized by their unique band structures and exotic transport phenomena, have become a central focus in modern electronics. Despite extensive research, a systematic understanding of the impact of heterogeneous integration on the electronic and optical properties of TaIrTe₄ device remains elusive. We have carried out density functional theory combined with nonequilibrium Green’s function formalism calculations for TaIrTe₄/WTe2, TaIrTe₄/MoTe₂ and TaIrTe₄/h-BN heterostructures, aiming to understand the manipulation of photoresponse through various band alignment strategies. The underlying impacts of interlayer interactions, charge transfer and build-in electric field on the electronic properties are carefully investigated. We design a dual-probe photodetector device to understand the overall photoresponse enhancement of the heterogeneous integration by decomposing into the specific strain, interlayer transition, band overlap and symmetry lowering mechanics. These van der Waals integrations provide an ideal platform for studying band alignment physics in self-powered optoelectronic devices.Read more
Pristine TaIrTe₄ monolayer unit cell used as the reference for band structure and lattice-constant analysis.1 characterization4 properties1 figureSimulated Supercell DftTaIrTe₄Studied MaterialExpand
TaIrTe₄/WTe₂ van der Waals heterostructure.1 characterization4 properties1 figureSimulated Supercell DftTaIrTe₄Studied MaterialWTe₂Studied MaterialExpand
TaIrTe₄/MoTe₂ van der Waals heterostructure.1 characterization8 properties1 figureSimulated Supercell DftTaIrTe₄Studied MaterialMoTe₂Studied MaterialExpand
TaIrTe₄/h-BN van der Waals heterostructure.1 characterization4 properties1 figureSimulated Supercell DftTaIrTe₄Studied MaterialBNStudied MaterialExpand
Research paperComputational DFTTheoreticalManipulating the Optical Response of TaIrTe₄ Heterostructures through Band Alignment StrategyLongfei Guo, Shaowen Xu, Qilong Cui, Qingmin Hu et al.2025·10.48550/arxiv.2411.15517·arXiv:2411.15517AbstractWeyl semimetals, such as TaIrTe4, characterized by their unique band structures and exotic transport phenomena, have become a central focus in modern electronics. Despite extensive research, a systematic understanding of the impact of heterogeneous integration on the electronic and optical properties of TaIrTe₄ device remains elusive. We have carried out density functional theory combined with nonequilibrium Green’s function formalism calculations for TaIrTe₄/WTe2, TaIrTe₄/MoTe₂ and TaIrTe₄/h-BN heterostructures, aiming to understand the manipulation of photoresponse through various band alignment strategies. The underlying impacts of interlayer interactions, charge transfer and build-in electric field on the electronic properties are carefully investigated. We design a dual-probe photodetector device to understand the overall photoresponse enhancement of the heterogeneous integration by decomposing into the specific strain, interlayer transition, band overlap and symmetry lowering mechanics. These van der Waals integrations provide an ideal platform for studying band alignment physics in self-powered optoelectronic devices.Read more
Pristine TaIrTe₄ monolayer unit cell used as the reference for band structure and lattice-constant analysis.1 characterization4 properties1 figureSimulated Supercell DftTaIrTe₄Studied MaterialExpand
TaIrTe₄/WTe₂ van der Waals heterostructure.1 characterization4 properties1 figureSimulated Supercell DftTaIrTe₄Studied MaterialWTe₂Studied MaterialExpand
TaIrTe₄/MoTe₂ van der Waals heterostructure.1 characterization8 properties1 figureSimulated Supercell DftTaIrTe₄Studied MaterialMoTe₂Studied MaterialExpand
TaIrTe₄/h-BN van der Waals heterostructure.1 characterization4 properties1 figureSimulated Supercell DftTaIrTe₄Studied MaterialBNStudied MaterialExpand
Research paperComputational DFTTheoreticalManipulating the Optical Response of TaIrTe₄ Heterostructures through Band Alignment StrategyLongfei Guo, Shaowen Xu, Qilong Cui, Qingmin Hu et al.2025·10.48550/arxiv.2411.15517·arXiv:2411.15517AbstractWeyl semimetals, such as TaIrTe4, characterized by their unique band structures and exotic transport phenomena, have become a central focus in modern electronics. Despite extensive research, a systematic understanding of the impact of heterogeneous integration on the electronic and optical properties of TaIrTe₄ device remains elusive. We have carried out density functional theory combined with nonequilibrium Green’s function formalism calculations for TaIrTe₄/WTe2, TaIrTe₄/MoTe₂ and TaIrTe₄/h-BN heterostructures, aiming to understand the manipulation of photoresponse through various band alignment strategies. The underlying impacts of interlayer interactions, charge transfer and build-in electric field on the electronic properties are carefully investigated. We design a dual-probe photodetector device to understand the overall photoresponse enhancement of the heterogeneous integration by decomposing into the specific strain, interlayer transition, band overlap and symmetry lowering mechanics. These van der Waals integrations provide an ideal platform for studying band alignment physics in self-powered optoelectronic devices.Read more
Pristine TaIrTe₄ monolayer unit cell used as the reference for band structure and lattice-constant analysis.1 characterization4 properties1 figureSimulated Supercell DftTaIrTe₄Studied MaterialExpand
TaIrTe₄/WTe₂ van der Waals heterostructure.1 characterization4 properties1 figureSimulated Supercell DftTaIrTe₄Studied MaterialWTe₂Studied MaterialExpand
TaIrTe₄/MoTe₂ van der Waals heterostructure.1 characterization8 properties1 figureSimulated Supercell DftTaIrTe₄Studied MaterialMoTe₂Studied MaterialExpand
TaIrTe₄/h-BN van der Waals heterostructure.1 characterization4 properties1 figureSimulated Supercell DftTaIrTe₄Studied MaterialBNStudied MaterialExpand
Research paperComputational DFTTheoreticalManipulating the Optical Response of TaIrTe₄ Heterostructures through Band Alignment StrategyLongfei Guo, Shaowen Xu, Qilong Cui, Qingmin Hu et al.2025·10.48550/arxiv.2411.15517·arXiv:2411.15517AbstractWeyl semimetals, such as TaIrTe4, characterized by their unique band structures and exotic transport phenomena, have become a central focus in modern electronics. Despite extensive research, a systematic understanding of the impact of heterogeneous integration on the electronic and optical properties of TaIrTe₄ device remains elusive. We have carried out density functional theory combined with nonequilibrium Green’s function formalism calculations for TaIrTe₄/WTe2, TaIrTe₄/MoTe₂ and TaIrTe₄/h-BN heterostructures, aiming to understand the manipulation of photoresponse through various band alignment strategies. The underlying impacts of interlayer interactions, charge transfer and build-in electric field on the electronic properties are carefully investigated. We design a dual-probe photodetector device to understand the overall photoresponse enhancement of the heterogeneous integration by decomposing into the specific strain, interlayer transition, band overlap and symmetry lowering mechanics. These van der Waals integrations provide an ideal platform for studying band alignment physics in self-powered optoelectronic devices.Read more
Pristine TaIrTe₄ monolayer unit cell used as the reference for band structure and lattice-constant analysis.1 characterization4 properties1 figureSimulated Supercell DftTaIrTe₄Studied MaterialExpand
TaIrTe₄/WTe₂ van der Waals heterostructure.1 characterization4 properties1 figureSimulated Supercell DftTaIrTe₄Studied MaterialWTe₂Studied MaterialExpand
TaIrTe₄/MoTe₂ van der Waals heterostructure.1 characterization8 properties1 figureSimulated Supercell DftTaIrTe₄Studied MaterialMoTe₂Studied MaterialExpand
TaIrTe₄/h-BN van der Waals heterostructure.1 characterization4 properties1 figureSimulated Supercell DftTaIrTe₄Studied MaterialBNStudied MaterialExpand