Abstract

We demonstrate exciton-assisted resonant electron tunneling in van der Waals tunnel junctions. Tunnel junctions consisting of graphene and gold electrodes separated by hexagonal boron nitride (hBN) with an adjacent transition metal dichalcogenide (TMD) monolayer show resonant I-V features at biases corresponding to TMD exciton energies. By placing the TMD outside the tunneling pathway, we show that the process does not require charge injection into the TMD. The work identifies exciton-mediated transport channels and establishes a new optoelectronic functionality for vdW heterostructures.

Abstract

We demonstrate exciton-assisted resonant electron tunneling in van der Waals tunnel junctions. Tunnel junctions consisting of graphene and gold electrodes separated by hexagonal boron nitride (hBN) with an adjacent transition metal dichalcogenide (TMD) monolayer show resonant I-V features at biases corresponding to TMD exciton energies. By placing the TMD outside the tunneling pathway, we show that the process does not require charge injection into the TMD. The work identifies exciton-mediated transport channels and establishes a new optoelectronic functionality for vdW heterostructures.

Abstract

We demonstrate exciton-assisted resonant electron tunneling in van der Waals tunnel junctions. Tunnel junctions consisting of graphene and gold electrodes separated by hexagonal boron nitride (hBN) with an adjacent transition metal dichalcogenide (TMD) monolayer show resonant I-V features at biases corresponding to TMD exciton energies. By placing the TMD outside the tunneling pathway, we show that the process does not require charge injection into the TMD. The work identifies exciton-mediated transport channels and establishes a new optoelectronic functionality for vdW heterostructures.

Abstract

We demonstrate exciton-assisted resonant electron tunneling in van der Waals tunnel junctions. Tunnel junctions consisting of graphene and gold electrodes separated by hexagonal boron nitride (hBN) with an adjacent transition metal dichalcogenide (TMD) monolayer show resonant I-V features at biases corresponding to TMD exciton energies. By placing the TMD outside the tunneling pathway, we show that the process does not require charge injection into the TMD. The work identifies exciton-mediated transport channels and establishes a new optoelectronic functionality for vdW heterostructures.