Research paperTheoreticalComputed PLEffect of Dispersion and Different Carrier Transitions on Absorption Characteristics of GaAsSubarna Alam, Mohammad Jahangir AlamarXiv·2023·10.48550/arxiv.2401.06773·arXiv:2401.06773AbstractOne of the basic optoelectronic characteristics is the absorption of any optoelectronic device or material. We present the characteristic of pure GaAs and the deviation of ideal spectra. Due to crystal defects, vacancies, impurities, etc., energy states exist in the semiconductor other than the allowed bands (conduction and valence bands). In this research, the effect of transitions between these states on absorption spectra and how the absorption coefficients change with the density and location of those states are analyzed numerically. Among the cases of 0.07 eV, 0.12 eV, and 0.17 eV with the density of 2%, 5%, 10%, 20%, and 30%, the minimum deviation occurs for the states located 0.07 eV below the conduction band and when the energy states have the minimum density of 2% and the deviation increases for the cases of 0.12 eV and 0.17 eV with higher densities.Read more
Intrinsic GaAs absorption model with constant refractive index (no dispersion).2 propertiesSimulatedGaAsStudied MaterialExpand
GaAs absorption model including dispersion via wavelength-dependent refractive index.1 propertySimulatedGaAsStudied MaterialExpand
GaAs absorption model with impurity/defect energy states located 0.07 eV below the conduction band.2 propertiesSimulatedGaAsStudied MaterialExpand
GaAs absorption model with impurity/defect energy states located 0.12 eV below the conduction band.2 propertiesSimulatedGaAsStudied MaterialExpand
GaAs absorption model with impurity/defect energy states located 0.17 eV below the conduction band.2 propertiesSimulatedGaAsStudied MaterialExpand
Research paperTheoreticalComputed PLEffect of Dispersion and Different Carrier Transitions on Absorption Characteristics of GaAsSubarna Alam, Mohammad Jahangir AlamarXiv·2023·10.48550/arxiv.2401.06773·arXiv:2401.06773AbstractOne of the basic optoelectronic characteristics is the absorption of any optoelectronic device or material. We present the characteristic of pure GaAs and the deviation of ideal spectra. Due to crystal defects, vacancies, impurities, etc., energy states exist in the semiconductor other than the allowed bands (conduction and valence bands). In this research, the effect of transitions between these states on absorption spectra and how the absorption coefficients change with the density and location of those states are analyzed numerically. Among the cases of 0.07 eV, 0.12 eV, and 0.17 eV with the density of 2%, 5%, 10%, 20%, and 30%, the minimum deviation occurs for the states located 0.07 eV below the conduction band and when the energy states have the minimum density of 2% and the deviation increases for the cases of 0.12 eV and 0.17 eV with higher densities.Read more
Intrinsic GaAs absorption model with constant refractive index (no dispersion).2 propertiesSimulatedGaAsStudied MaterialExpand
GaAs absorption model including dispersion via wavelength-dependent refractive index.1 propertySimulatedGaAsStudied MaterialExpand
GaAs absorption model with impurity/defect energy states located 0.07 eV below the conduction band.2 propertiesSimulatedGaAsStudied MaterialExpand
GaAs absorption model with impurity/defect energy states located 0.12 eV below the conduction band.2 propertiesSimulatedGaAsStudied MaterialExpand
GaAs absorption model with impurity/defect energy states located 0.17 eV below the conduction band.2 propertiesSimulatedGaAsStudied MaterialExpand
Research paperTheoreticalComputed PLEffect of Dispersion and Different Carrier Transitions on Absorption Characteristics of GaAsSubarna Alam, Mohammad Jahangir AlamarXiv·2023·10.48550/arxiv.2401.06773·arXiv:2401.06773AbstractOne of the basic optoelectronic characteristics is the absorption of any optoelectronic device or material. We present the characteristic of pure GaAs and the deviation of ideal spectra. Due to crystal defects, vacancies, impurities, etc., energy states exist in the semiconductor other than the allowed bands (conduction and valence bands). In this research, the effect of transitions between these states on absorption spectra and how the absorption coefficients change with the density and location of those states are analyzed numerically. Among the cases of 0.07 eV, 0.12 eV, and 0.17 eV with the density of 2%, 5%, 10%, 20%, and 30%, the minimum deviation occurs for the states located 0.07 eV below the conduction band and when the energy states have the minimum density of 2% and the deviation increases for the cases of 0.12 eV and 0.17 eV with higher densities.Read more
Intrinsic GaAs absorption model with constant refractive index (no dispersion).2 propertiesSimulatedGaAsStudied MaterialExpand
GaAs absorption model including dispersion via wavelength-dependent refractive index.1 propertySimulatedGaAsStudied MaterialExpand
GaAs absorption model with impurity/defect energy states located 0.07 eV below the conduction band.2 propertiesSimulatedGaAsStudied MaterialExpand
GaAs absorption model with impurity/defect energy states located 0.12 eV below the conduction band.2 propertiesSimulatedGaAsStudied MaterialExpand
GaAs absorption model with impurity/defect energy states located 0.17 eV below the conduction band.2 propertiesSimulatedGaAsStudied MaterialExpand
Research paperTheoreticalComputed PLEffect of Dispersion and Different Carrier Transitions on Absorption Characteristics of GaAsSubarna Alam, Mohammad Jahangir AlamarXiv·2023·10.48550/arxiv.2401.06773·arXiv:2401.06773AbstractOne of the basic optoelectronic characteristics is the absorption of any optoelectronic device or material. We present the characteristic of pure GaAs and the deviation of ideal spectra. Due to crystal defects, vacancies, impurities, etc., energy states exist in the semiconductor other than the allowed bands (conduction and valence bands). In this research, the effect of transitions between these states on absorption spectra and how the absorption coefficients change with the density and location of those states are analyzed numerically. Among the cases of 0.07 eV, 0.12 eV, and 0.17 eV with the density of 2%, 5%, 10%, 20%, and 30%, the minimum deviation occurs for the states located 0.07 eV below the conduction band and when the energy states have the minimum density of 2% and the deviation increases for the cases of 0.12 eV and 0.17 eV with higher densities.Read more
Intrinsic GaAs absorption model with constant refractive index (no dispersion).2 propertiesSimulatedGaAsStudied MaterialExpand
GaAs absorption model including dispersion via wavelength-dependent refractive index.1 propertySimulatedGaAsStudied MaterialExpand
GaAs absorption model with impurity/defect energy states located 0.07 eV below the conduction band.2 propertiesSimulatedGaAsStudied MaterialExpand
GaAs absorption model with impurity/defect energy states located 0.12 eV below the conduction band.2 propertiesSimulatedGaAsStudied MaterialExpand
GaAs absorption model with impurity/defect energy states located 0.17 eV below the conduction band.2 propertiesSimulatedGaAsStudied MaterialExpand
