Research paperTheoreticalComputed PhononDielectric Substrate Dependence of Thermoelectric Transport in BLG–GaAs–BLG HeterostructuresVo Van Tai, Truong Van Tuan, Tran Trong Tai, Le Tri Dat et al.Preprint (arXiv)·2025·10.1016/j.physe.2025.116370·arXiv:2508.03035AbstractWe theoretically study the thermoelectric transport S in a double-layer bilayer graphene (BLG-GaAs-BLG) system on dielectric substrates (h-BN, Al₂O3, HfO₂). Electrons interact with GaAs acoustic phonons via both the deformation potential (acDP) and piezoelectric (acPE) scattering. Results show that piezoelectric scattering dominates the total transport, especially at low carrier density and high dielectric constant. Substrate dielectric constant significantly influences thermopower S, and the thermopower of the materials is in the order of HfO₂ > Al₂O₃ > h-BN. When densities on two BLG layers are unequal, the contribution from acDP scattering Sd decreases (increases) at low (high) densities versus equal densities, while acPE scattering Sg remains stable, making S largely Sg-dependent. Increasing interlayer distance d enhances S, while higher temperature boosts Sd (notably at low densities) with minimal effect on Sg.Read more
Theoretical BLG–GaAs–BLG heterostructure on h-BN dielectric substrate.No measurements recordedSimulatedC₂Studied MaterialGaAsStudied MaterialBNSubstrate / DielectricExpand
Theoretical BLG–GaAs–BLG heterostructure on Al₂O₃ dielectric substrate.No measurements recordedSimulatedC₂Studied MaterialGaAsStudied MaterialAl₂O₃Substrate / DielectricExpand
Theoretical BLG–GaAs–BLG heterostructure on HfO₂ dielectric substrate.No measurements recordedSimulatedC₂Studied MaterialGaAsStudied MaterialHfO₂Substrate / DielectricExpand
Research paperTheoreticalComputed PhononDielectric Substrate Dependence of Thermoelectric Transport in BLG–GaAs–BLG HeterostructuresVo Van Tai, Truong Van Tuan, Tran Trong Tai, Le Tri Dat et al.Preprint (arXiv)·2025·10.1016/j.physe.2025.116370·arXiv:2508.03035AbstractWe theoretically study the thermoelectric transport S in a double-layer bilayer graphene (BLG-GaAs-BLG) system on dielectric substrates (h-BN, Al₂O3, HfO₂). Electrons interact with GaAs acoustic phonons via both the deformation potential (acDP) and piezoelectric (acPE) scattering. Results show that piezoelectric scattering dominates the total transport, especially at low carrier density and high dielectric constant. Substrate dielectric constant significantly influences thermopower S, and the thermopower of the materials is in the order of HfO₂ > Al₂O₃ > h-BN. When densities on two BLG layers are unequal, the contribution from acDP scattering Sd decreases (increases) at low (high) densities versus equal densities, while acPE scattering Sg remains stable, making S largely Sg-dependent. Increasing interlayer distance d enhances S, while higher temperature boosts Sd (notably at low densities) with minimal effect on Sg.Read more
Theoretical BLG–GaAs–BLG heterostructure on h-BN dielectric substrate.No measurements recordedSimulatedC₂Studied MaterialGaAsStudied MaterialBNSubstrate / DielectricExpand
Theoretical BLG–GaAs–BLG heterostructure on Al₂O₃ dielectric substrate.No measurements recordedSimulatedC₂Studied MaterialGaAsStudied MaterialAl₂O₃Substrate / DielectricExpand
Theoretical BLG–GaAs–BLG heterostructure on HfO₂ dielectric substrate.No measurements recordedSimulatedC₂Studied MaterialGaAsStudied MaterialHfO₂Substrate / DielectricExpand
Research paperTheoreticalComputed PhononDielectric Substrate Dependence of Thermoelectric Transport in BLG–GaAs–BLG HeterostructuresVo Van Tai, Truong Van Tuan, Tran Trong Tai, Le Tri Dat et al.Preprint (arXiv)·2025·10.1016/j.physe.2025.116370·arXiv:2508.03035AbstractWe theoretically study the thermoelectric transport S in a double-layer bilayer graphene (BLG-GaAs-BLG) system on dielectric substrates (h-BN, Al₂O3, HfO₂). Electrons interact with GaAs acoustic phonons via both the deformation potential (acDP) and piezoelectric (acPE) scattering. Results show that piezoelectric scattering dominates the total transport, especially at low carrier density and high dielectric constant. Substrate dielectric constant significantly influences thermopower S, and the thermopower of the materials is in the order of HfO₂ > Al₂O₃ > h-BN. When densities on two BLG layers are unequal, the contribution from acDP scattering Sd decreases (increases) at low (high) densities versus equal densities, while acPE scattering Sg remains stable, making S largely Sg-dependent. Increasing interlayer distance d enhances S, while higher temperature boosts Sd (notably at low densities) with minimal effect on Sg.Read more
Theoretical BLG–GaAs–BLG heterostructure on h-BN dielectric substrate.No measurements recordedSimulatedC₂Studied MaterialGaAsStudied MaterialBNSubstrate / DielectricExpand
Theoretical BLG–GaAs–BLG heterostructure on Al₂O₃ dielectric substrate.No measurements recordedSimulatedC₂Studied MaterialGaAsStudied MaterialAl₂O₃Substrate / DielectricExpand
Theoretical BLG–GaAs–BLG heterostructure on HfO₂ dielectric substrate.No measurements recordedSimulatedC₂Studied MaterialGaAsStudied MaterialHfO₂Substrate / DielectricExpand
Research paperTheoreticalComputed PhononDielectric Substrate Dependence of Thermoelectric Transport in BLG–GaAs–BLG HeterostructuresVo Van Tai, Truong Van Tuan, Tran Trong Tai, Le Tri Dat et al.Preprint (arXiv)·2025·10.1016/j.physe.2025.116370·arXiv:2508.03035AbstractWe theoretically study the thermoelectric transport S in a double-layer bilayer graphene (BLG-GaAs-BLG) system on dielectric substrates (h-BN, Al₂O3, HfO₂). Electrons interact with GaAs acoustic phonons via both the deformation potential (acDP) and piezoelectric (acPE) scattering. Results show that piezoelectric scattering dominates the total transport, especially at low carrier density and high dielectric constant. Substrate dielectric constant significantly influences thermopower S, and the thermopower of the materials is in the order of HfO₂ > Al₂O₃ > h-BN. When densities on two BLG layers are unequal, the contribution from acDP scattering Sd decreases (increases) at low (high) densities versus equal densities, while acPE scattering Sg remains stable, making S largely Sg-dependent. Increasing interlayer distance d enhances S, while higher temperature boosts Sd (notably at low densities) with minimal effect on Sg.Read more
Theoretical BLG–GaAs–BLG heterostructure on h-BN dielectric substrate.No measurements recordedSimulatedC₂Studied MaterialGaAsStudied MaterialBNSubstrate / DielectricExpand
Theoretical BLG–GaAs–BLG heterostructure on Al₂O₃ dielectric substrate.No measurements recordedSimulatedC₂Studied MaterialGaAsStudied MaterialAl₂O₃Substrate / DielectricExpand
Theoretical BLG–GaAs–BLG heterostructure on HfO₂ dielectric substrate.No measurements recordedSimulatedC₂Studied MaterialGaAsStudied MaterialHfO₂Substrate / DielectricExpand
