Research paper
Experimental CharacterizationComputational MultiscaleTheoreticalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization5 properties2 figures
1 characterization5 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data
Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier
Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes
Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
Miniaturized time-correlated single-photon counting module for time-of-flight non-line-of-sight imaging applications
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization5 properties2 figures
1 characterization5 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data
Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier
Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes
Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
Miniaturized time-correlated single-photon counting module for time-of-flight non-line-of-sight imaging applications
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization5 properties2 figures
1 characterization5 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data
Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier
Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes
Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
Miniaturized time-correlated single-photon counting module for time-of-flight non-line-of-sight imaging applications
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization5 properties2 figures
1 characterization5 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data
Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier
Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes
Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
Miniaturized time-correlated single-photon counting module for time-of-flight non-line-of-sight imaging applications